JP2006013503A5 - - Google Patents
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- Publication number
- JP2006013503A5 JP2006013503A5 JP2005182180A JP2005182180A JP2006013503A5 JP 2006013503 A5 JP2006013503 A5 JP 2006013503A5 JP 2005182180 A JP2005182180 A JP 2005182180A JP 2005182180 A JP2005182180 A JP 2005182180A JP 2006013503 A5 JP2006013503 A5 JP 2006013503A5
- Authority
- JP
- Japan
- Prior art keywords
- precursor
- film
- silicon
- doped
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 claims 15
- 239000002243 precursor Substances 0.000 claims 14
- 239000012686 silicon precursor Substances 0.000 claims 12
- 239000002019 doping agent Substances 0.000 claims 7
- 238000000151 deposition Methods 0.000 claims 6
- 230000008021 deposition Effects 0.000 claims 5
- 229910052732 germanium Inorganic materials 0.000 claims 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- 229910052796 boron Inorganic materials 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 3
- 229910052785 arsenic Inorganic materials 0.000 claims 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 3
- 229910052733 gallium Inorganic materials 0.000 claims 3
- 229910052735 hafnium Inorganic materials 0.000 claims 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 3
- 229910052738 indium Inorganic materials 0.000 claims 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- -1 alkyl hydride Chemical class 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000007833 carbon precursor Substances 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 230000000704 physical effect Effects 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 125000004954 trialkylamino group Chemical group 0.000 claims 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 150000002291 germanium compounds Chemical class 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/710,245 | 2004-06-29 | ||
| US10/710,245 US20050287747A1 (en) | 2004-06-29 | 2004-06-29 | Doped nitride film, doped oxide film and other doped films |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006013503A JP2006013503A (ja) | 2006-01-12 |
| JP2006013503A5 true JP2006013503A5 (enExample) | 2008-06-19 |
| JP5078240B2 JP5078240B2 (ja) | 2012-11-21 |
Family
ID=35506413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005182180A Expired - Fee Related JP5078240B2 (ja) | 2004-06-29 | 2005-06-22 | ドープ窒化膜、ドープ酸化膜、およびその他のドープ膜 |
Country Status (4)
| Country | Link |
|---|---|
| US (4) | US20050287747A1 (enExample) |
| JP (1) | JP5078240B2 (enExample) |
| CN (1) | CN100428424C (enExample) |
| TW (1) | TWI355684B (enExample) |
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-
2004
- 2004-06-29 US US10/710,245 patent/US20050287747A1/en not_active Abandoned
-
2005
- 2005-06-03 TW TW094118424A patent/TWI355684B/zh not_active IP Right Cessation
- 2005-06-22 JP JP2005182180A patent/JP5078240B2/ja not_active Expired - Fee Related
- 2005-06-24 CN CNB2005100809411A patent/CN100428424C/zh not_active Expired - Lifetime
-
2006
- 2006-02-08 US US11/349,233 patent/US7361611B2/en not_active Expired - Lifetime
- 2006-07-05 US US11/428,648 patent/US20060237846A1/en not_active Abandoned
-
2007
- 2007-10-26 US US11/924,825 patent/US7595010B2/en not_active Expired - Fee Related
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