JP2009531872A5 - - Google Patents

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Publication number
JP2009531872A5
JP2009531872A5 JP2009509546A JP2009509546A JP2009531872A5 JP 2009531872 A5 JP2009531872 A5 JP 2009531872A5 JP 2009509546 A JP2009509546 A JP 2009509546A JP 2009509546 A JP2009509546 A JP 2009509546A JP 2009531872 A5 JP2009531872 A5 JP 2009531872A5
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JP
Japan
Prior art keywords
wafer
reaction chamber
film
etching
chemical
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JP2009509546A
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English (en)
Japanese (ja)
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JP5420397B2 (ja
JP2009531872A (ja
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Priority claimed from US11/336,178 external-priority patent/US7709391B2/en
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Publication of JP2009531872A publication Critical patent/JP2009531872A/ja
Publication of JP2009531872A5 publication Critical patent/JP2009531872A5/ja
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Publication of JP5420397B2 publication Critical patent/JP5420397B2/ja
Expired - Fee Related legal-status Critical Current
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JP2009509546A 2006-01-20 2007-01-09 膜形成プロセスにおける反応性エッチングと成長の化学種のインサイチュ生成のための方法 Expired - Fee Related JP5420397B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/336,178 US7709391B2 (en) 2006-01-20 2006-01-20 Methods for in-situ generation of reactive etch and growth specie in film formation processes
US11/336,178 2006-01-20
PCT/US2007/000338 WO2008127220A2 (en) 2006-01-20 2007-01-09 Methods for in-situ generation of reactive etch and growth specie in film formation processes

Publications (3)

Publication Number Publication Date
JP2009531872A JP2009531872A (ja) 2009-09-03
JP2009531872A5 true JP2009531872A5 (enExample) 2010-02-12
JP5420397B2 JP5420397B2 (ja) 2014-02-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009509546A Expired - Fee Related JP5420397B2 (ja) 2006-01-20 2007-01-09 膜形成プロセスにおける反応性エッチングと成長の化学種のインサイチュ生成のための方法

Country Status (5)

Country Link
US (1) US7709391B2 (enExample)
JP (1) JP5420397B2 (enExample)
KR (2) KR101024194B1 (enExample)
TW (1) TWI379346B (enExample)
WO (1) WO2008127220A2 (enExample)

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US20090087967A1 (en) * 2005-11-14 2009-04-02 Todd Michael A Precursors and processes for low temperature selective epitaxial growth
US20080070356A1 (en) * 2006-09-14 2008-03-20 Advanced Micro Devices, Inc. Trench replacement gate process for transistors having elevated source and drain regions
US7976634B2 (en) * 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
WO2009136974A2 (en) * 2008-02-07 2009-11-12 Los Alamos National Security, Llc Thick-shell nanocrystal quantum dots
KR101064873B1 (ko) * 2009-10-23 2011-09-16 주성엔지니어링(주) 기판 처리 장치 및 방법
KR101478331B1 (ko) 2010-11-17 2014-12-31 신닛테츠스미킨 카부시키카이샤 에피택셜 탄화규소 단결정 기판의 제조 방법
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US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
JP5876398B2 (ja) 2012-10-18 2016-03-02 東京エレクトロン株式会社 成膜方法及び成膜装置
US20140116336A1 (en) * 2012-10-26 2014-05-01 Applied Materials, Inc. Substrate process chamber exhaust
US11414759B2 (en) * 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
KR102150728B1 (ko) * 2013-12-16 2020-09-01 에스케이실트론 주식회사 공정 챔버의 세정 장치 및 세정 방법
CN108369894B (zh) 2015-12-04 2019-10-15 应用材料公司 用于清洁ingaas(或iii-v族)基板的方法和解决方案
KR102408720B1 (ko) 2017-06-07 2022-06-14 삼성전자주식회사 상부 돔을 포함하는 반도체 공정 챔버
JP6971823B2 (ja) * 2017-12-13 2021-11-24 東京エレクトロン株式会社 シリコン含有膜のエッチング方法、コンピュータ記憶媒体、及びシリコン含有膜のエッチング装置
CN214848503U (zh) * 2018-08-29 2021-11-23 应用材料公司 注入器设备、基板处理设备及在机器可读介质中实现的结构
US11257671B2 (en) * 2018-09-28 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system of control of epitaxial growth
FI128855B (en) * 2019-09-24 2021-01-29 Picosun Oy FLUID DISTRIBUTOR FOR THIN FILM GROWING EQUIPMENT, RELATED EQUIPMENT AND METHODS
TWI749521B (zh) * 2020-04-13 2021-12-11 大陸商蘇州雨竹機電有限公司 具串聯式冷卻室之多流道氣體噴射器
US20220290293A1 (en) * 2021-03-15 2022-09-15 HelioSource Tech, LLC Hardware and processes for in operando deposition shield replacement/surface cleaning
CN119889750B (zh) * 2025-01-13 2025-11-28 西北工业大学 一种棱柱型triso颗粒弥散增材燃料元件及其制备方法和应用

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