JP5420397B2 - 膜形成プロセスにおける反応性エッチングと成長の化学種のインサイチュ生成のための方法 - Google Patents

膜形成プロセスにおける反応性エッチングと成長の化学種のインサイチュ生成のための方法 Download PDF

Info

Publication number
JP5420397B2
JP5420397B2 JP2009509546A JP2009509546A JP5420397B2 JP 5420397 B2 JP5420397 B2 JP 5420397B2 JP 2009509546 A JP2009509546 A JP 2009509546A JP 2009509546 A JP2009509546 A JP 2009509546A JP 5420397 B2 JP5420397 B2 JP 5420397B2
Authority
JP
Japan
Prior art keywords
etching
reaction
hydrogen
wafer
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009509546A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009531872A5 (enExample
JP2009531872A (ja
Inventor
サティーシ クプラオ，
ディヴィッド ケー． カールソン，
ハワード ベックフォード，
エロール サンチェス，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2009531872A publication Critical patent/JP2009531872A/ja
Publication of JP2009531872A5 publication Critical patent/JP2009531872A5/ja
Application granted granted Critical
Publication of JP5420397B2 publication Critical patent/JP5420397B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2009509546A 2006-01-20 2007-01-09 膜形成プロセスにおける反応性エッチングと成長の化学種のインサイチュ生成のための方法 Expired - Fee Related JP5420397B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/336,178 US7709391B2 (en) 2006-01-20 2006-01-20 Methods for in-situ generation of reactive etch and growth specie in film formation processes
US11/336,178 2006-01-20
PCT/US2007/000338 WO2008127220A2 (en) 2006-01-20 2007-01-09 Methods for in-situ generation of reactive etch and growth specie in film formation processes

Publications (3)

Publication Number Publication Date
JP2009531872A JP2009531872A (ja) 2009-09-03
JP2009531872A5 JP2009531872A5 (enExample) 2010-02-12
JP5420397B2 true JP5420397B2 (ja) 2014-02-19

Family

ID=38284511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009509546A Expired - Fee Related JP5420397B2 (ja) 2006-01-20 2007-01-09 膜形成プロセスにおける反応性エッチングと成長の化学種のインサイチュ生成のための方法

Country Status (5)

Country Link
US (1) US7709391B2 (enExample)
JP (1) JP5420397B2 (enExample)
KR (2) KR101237868B1 (enExample)
TW (1) TWI379346B (enExample)
WO (1) WO2008127220A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090087967A1 (en) * 2005-11-14 2009-04-02 Todd Michael A Precursors and processes for low temperature selective epitaxial growth
US20080070356A1 (en) * 2006-09-14 2008-03-20 Advanced Micro Devices, Inc. Trench replacement gate process for transistors having elevated source and drain regions
US7976634B2 (en) * 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
WO2009136974A2 (en) * 2008-02-07 2009-11-12 Los Alamos National Security, Llc Thick-shell nanocrystal quantum dots
KR101064873B1 (ko) * 2009-10-23 2011-09-16 주성엔지니어링(주) 기판 처리 장치 및 방법
WO2012067112A1 (ja) 2010-11-17 2012-05-24 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板の製造方法
CN103430285B (zh) * 2011-03-22 2016-06-01 应用材料公司 用于化学气相沉积腔室的衬里组件
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
JP5876398B2 (ja) * 2012-10-18 2016-03-02 東京エレクトロン株式会社 成膜方法及び成膜装置
US20140116336A1 (en) * 2012-10-26 2014-05-01 Applied Materials, Inc. Substrate process chamber exhaust
US11414759B2 (en) * 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
KR102150728B1 (ko) * 2013-12-16 2020-09-01 에스케이실트론 주식회사 공정 챔버의 세정 장치 및 세정 방법
KR102705337B1 (ko) 2015-12-04 2024-09-11 어플라이드 머티어리얼스, 인코포레이티드 InGaAs(또는 Ⅲ-Ⅴ) 기판들을 세정하기 위한 방법들 및 해법들
KR102408720B1 (ko) 2017-06-07 2022-06-14 삼성전자주식회사 상부 돔을 포함하는 반도체 공정 챔버
JP6971823B2 (ja) * 2017-12-13 2021-11-24 東京エレクトロン株式会社 シリコン含有膜のエッチング方法、コンピュータ記憶媒体、及びシリコン含有膜のエッチング装置
WO2020046567A1 (en) 2018-08-29 2020-03-05 Applied Materials, Inc. Chamber injector
US11257671B2 (en) * 2018-09-28 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system of control of epitaxial growth
FI128855B (en) * 2019-09-24 2021-01-29 Picosun Oy FLUID DISTRIBUTOR FOR THIN FILM GROWING EQUIPMENT, RELATED EQUIPMENT AND METHODS
TWI749521B (zh) * 2020-04-13 2021-12-11 大陸商蘇州雨竹機電有限公司 具串聯式冷卻室之多流道氣體噴射器
US20220290293A1 (en) * 2021-03-15 2022-09-15 HelioSource Tech, LLC Hardware and processes for in operando deposition shield replacement/surface cleaning
CN119889750B (zh) * 2025-01-13 2025-11-28 西北工业大学 一种棱柱型triso颗粒弥散增材燃料元件及其制备方法和应用

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4613400A (en) 1985-05-20 1986-09-23 Applied Materials, Inc. In-situ photoresist capping process for plasma etching
US4963506A (en) * 1989-04-24 1990-10-16 Motorola Inc. Selective deposition of amorphous and polycrystalline silicon
US5108792A (en) 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
US5179677A (en) 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity
JP3149464B2 (ja) * 1991-06-28 2001-03-26 日本電気株式会社 シリコンエピタキシャル膜の選択成長方法及びその装置
EP0636704B1 (en) * 1993-07-30 1999-11-03 Applied Materials, Inc. Silicon nitride deposition
DE69433656T2 (de) * 1993-07-30 2005-02-17 Applied Materials, Inc., Santa Clara Verfahren zum Einleiten reaktiven Gases in eine Substratbearbeitungsvorrichtung
US5916369A (en) 1995-06-07 1999-06-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
JP3761918B2 (ja) * 1994-09-13 2006-03-29 株式会社東芝 半導体装置の製造方法
JP3725598B2 (ja) * 1996-01-12 2005-12-14 東芝セラミックス株式会社 エピタキシャルウェハの製造方法
US6011031A (en) * 1997-05-30 2000-01-04 Dr. Reddy's Research Foundation Azolidinediones useful for the treatment of diabetes, dyslipidemia and hypertension: process for their preparation and pharmaceutical compositions containing them
US6037273A (en) 1997-07-11 2000-03-14 Applied Materials, Inc. Method and apparatus for insitu vapor generation
US6159866A (en) 1998-03-02 2000-12-12 Applied Materials, Inc. Method for insitu vapor generation for forming an oxide on a substrate
AU2001249212A1 (en) * 2000-03-15 2001-09-24 Tufts University Controlling surface chemistry on solid substrates
US6900133B2 (en) 2002-09-18 2005-05-31 Applied Materials, Inc Method of etching variable depth features in a crystalline substrate
US6972228B2 (en) * 2003-03-12 2005-12-06 Intel Corporation Method of forming an element of a microelectronic circuit
US7107820B2 (en) * 2003-05-02 2006-09-19 Praxair S.T. Technology, Inc. Integrated gas supply and leak detection system
US7132338B2 (en) 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
US7166528B2 (en) * 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US7396743B2 (en) 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
DE102004061036B4 (de) * 2004-12-18 2008-10-30 Daimler Ag Windschutz für Cabriolets
US7438760B2 (en) 2005-02-04 2008-10-21 Asm America, Inc. Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition

Also Published As

Publication number Publication date
KR101237868B1 (ko) 2013-03-04
KR20090012206A (ko) 2009-02-02
KR20110023880A (ko) 2011-03-08
TWI379346B (en) 2012-12-11
KR101024194B1 (ko) 2011-03-22
WO2008127220A3 (en) 2009-04-16
WO2008127220A2 (en) 2008-10-23
US7709391B2 (en) 2010-05-04
TW200729304A (en) 2007-08-01
JP2009531872A (ja) 2009-09-03
US20070170148A1 (en) 2007-07-26

Similar Documents

Publication Publication Date Title
JP5420397B2 (ja) 膜形成プロセスにおける反応性エッチングと成長の化学種のインサイチュ生成のための方法
US7262116B2 (en) Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation
US7629267B2 (en) High stress nitride film and method for formation thereof
KR101975071B1 (ko) 플라즈마 활성화된 컨포멀 유전체 막 증착
US20090087967A1 (en) Precursors and processes for low temperature selective epitaxial growth
US20060286774A1 (en) Method for forming silicon-containing materials during a photoexcitation deposition process
US20060286776A1 (en) Method for forming silicon-containing materials during a photoexcitation deposition process
US7029995B2 (en) Methods for depositing amorphous materials and using them as templates for epitaxial films by solid phase epitaxy
US20100018460A1 (en) Method for forming silicon-containing materials during a photoexcitation deposition process
US7897491B2 (en) Separate injection of reactive species in selective formation of films
JP2009521801A (ja) ドープされた半導体物質のエピタキシャル堆積
TW201323647A (zh) 利用包含鉿或鋯之前驅物之膜的原子層沉積
KR20120023040A (ko) ＨＶＰＥ에서 인-시튜 사전-ＧａＮ 증착 층을 형성하는 방법
JPH06252057A (ja) 半導体装置の製造方法
WO2010129289A2 (en) Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
KR101176668B1 (ko) Ｕｖ 방사를 이용한 실리콘-함유 막들의 저온 에피택셜 성장
CN120967508A (zh) 碳化硅外延片的生长方法及碳化硅外延片

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091211

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20091211

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100628

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20101130

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20101210

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120221

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120518

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120731

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20120925

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121029

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20121105

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121129

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130312

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130611

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130618

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130628

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131112

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131120

LAPS Cancellation because of no payment of annual fees