JP2005532181A5 - - Google Patents

Download PDF

Info

Publication number
JP2005532181A5
JP2005532181A5 JP2004518992A JP2004518992A JP2005532181A5 JP 2005532181 A5 JP2005532181 A5 JP 2005532181A5 JP 2004518992 A JP2004518992 A JP 2004518992A JP 2004518992 A JP2004518992 A JP 2004518992A JP 2005532181 A5 JP2005532181 A5 JP 2005532181A5
Authority
JP
Japan
Prior art keywords
optoelectronic device
nanowhisker
whisker
substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004518992A
Other languages
English (en)
Japanese (ja)
Other versions
JP4948766B2 (ja
JP2005532181A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/GB2003/002929 external-priority patent/WO2004004927A2/en
Publication of JP2005532181A publication Critical patent/JP2005532181A/ja
Publication of JP2005532181A5 publication Critical patent/JP2005532181A5/ja
Application granted granted Critical
Publication of JP4948766B2 publication Critical patent/JP4948766B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004518992A 2002-07-08 2003-07-08 光電子デバイス、太陽電池、及びフォトディテクタ Expired - Fee Related JP4948766B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US39383502P 2002-07-08 2002-07-08
US60/393,835 2002-07-08
US45998203P 2003-04-04 2003-04-04
US60/459,982 2003-04-04
PCT/GB2003/002929 WO2004004927A2 (en) 2002-07-08 2003-07-08 Nanostructures and methods for manufacturing the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010284952A Division JP5437229B2 (ja) 2002-07-08 2010-12-21 エピタキシャル層の形成方法及び層構造

Publications (3)

Publication Number Publication Date
JP2005532181A JP2005532181A (ja) 2005-10-27
JP2005532181A5 true JP2005532181A5 (https=) 2009-08-06
JP4948766B2 JP4948766B2 (ja) 2012-06-06

Family

ID=30118388

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2004518992A Expired - Fee Related JP4948766B2 (ja) 2002-07-08 2003-07-08 光電子デバイス、太陽電池、及びフォトディテクタ
JP2010284952A Expired - Fee Related JP5437229B2 (ja) 2002-07-08 2010-12-21 エピタキシャル層の形成方法及び層構造

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2010284952A Expired - Fee Related JP5437229B2 (ja) 2002-07-08 2010-12-21 エピタキシャル層の形成方法及び層構造

Country Status (10)

Country Link
US (6) US7335908B2 (https=)
EP (2) EP2302108B1 (https=)
JP (2) JP4948766B2 (https=)
KR (1) KR101147053B1 (https=)
CN (2) CN101562205B (https=)
AT (1) ATE557116T1 (https=)
AU (1) AU2003244851A1 (https=)
CA (2) CA2491941C (https=)
TW (1) TWI318418B (https=)
WO (1) WO2004004927A2 (https=)

Families Citing this family (302)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060175601A1 (en) * 2000-08-22 2006-08-10 President And Fellows Of Harvard College Nanoscale wires and related devices
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
CN101887935B (zh) * 2000-08-22 2013-09-11 哈佛学院董事会 掺杂的拉长半导体,其生长,包含这类半导体的器件及其制造
KR20030055346A (ko) * 2000-12-11 2003-07-02 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
WO2004088755A1 (en) 2003-04-04 2004-10-14 Startskottet 22286 Ab Nanowhiskers with pn junctions and methods of fabricating thereof
JP2007527507A (ja) * 2003-07-08 2007-09-27 キューナノ エービー ナノウィスカーを組み込んだプローブ構造体、その製造方法及びナノウィスカーを形成する方法
US6989325B2 (en) * 2003-09-03 2006-01-24 Industrial Technology Research Institute Self-assembled nanometer conductive bumps and method for fabricating
US20070157873A1 (en) * 2003-09-12 2007-07-12 Hauptmann Jonas R Method of fabrication and device comprising elongated nanosize elements
US7012279B2 (en) 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
US7662706B2 (en) 2003-11-26 2010-02-16 Qunano Ab Nanostructures formed of branched nanowhiskers and methods of producing the same
US7208094B2 (en) * 2003-12-17 2007-04-24 Hewlett-Packard Development Company, L.P. Methods of bridging lateral nanowires and device using same
US7354850B2 (en) * 2004-02-06 2008-04-08 Qunano Ab Directionally controlled growth of nanowhiskers
US20090227107A9 (en) * 2004-02-13 2009-09-10 President And Fellows Of Havard College Nanostructures Containing Metal Semiconductor Compounds
KR100584188B1 (ko) * 2004-03-08 2006-05-29 한국과학기술연구원 나노선 광센서 및 이를 포함하는 키트
US20050205883A1 (en) 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
US7597814B2 (en) * 2004-03-23 2009-10-06 Hewlett Packard Development Company, L.P. Structure formed with template having nanoscale features
WO2006107312A1 (en) * 2004-06-15 2006-10-12 President And Fellows Of Harvard College Nanosensors
US7528002B2 (en) * 2004-06-25 2009-05-05 Qunano Ab Formation of nanowhiskers on a substrate of dissimilar material
KR20070026826A (ko) * 2004-07-20 2007-03-08 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 디바이스 및 그 제조 방법
US7442964B2 (en) 2004-08-04 2008-10-28 Philips Lumileds Lighting Company, Llc Photonic crystal light emitting device with multiple lattices
US7705415B1 (en) 2004-08-12 2010-04-27 Drexel University Optical and electronic devices based on nano-plasma
US7078697B2 (en) * 2004-10-07 2006-07-18 Raytheon Company Thermally powered terahertz radiation source using photonic crystals
US20070240757A1 (en) * 2004-10-15 2007-10-18 The Trustees Of Boston College Solar cells using arrays of optical rectennas
DE102004053646A1 (de) * 2004-11-03 2006-05-04 Otto-Von-Guericke-Universität Magdeburg Verfahren zur örtlich definierten Erzeugung von Silizium-Nanokristallen
US8029186B2 (en) * 2004-11-05 2011-10-04 International Business Machines Corporation Method for thermal characterization under non-uniform heat load
US7307271B2 (en) * 2004-11-05 2007-12-11 Hewlett-Packard Development Company, L.P. Nanowire interconnection and nano-scale device applications
US7400665B2 (en) * 2004-11-05 2008-07-15 Hewlett-Packard Developement Company, L.P. Nano-VCSEL device and fabrication thereof using nano-colonnades
CN101124638A (zh) * 2004-12-06 2008-02-13 哈佛大学 基于纳米尺度线的数据存储
US8120014B2 (en) * 2004-12-15 2012-02-21 Drexel University Nanowire based plasmonics
US7387578B2 (en) * 2004-12-17 2008-06-17 Integran Technologies Inc. Strong, lightweight article containing a fine-grained metallic layer
US7587645B2 (en) * 2005-01-24 2009-09-08 Samsung Electronics Co., Ltd. Input circuit of semiconductor memory device and test system having the same
EP1696473A3 (en) * 2005-02-25 2009-06-10 Samsung Electronics Co.,Ltd. Silicon nano wires, semiconductor device including the same, and method of manufacturing the silicon nano wires
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US20060263974A1 (en) 2005-05-18 2006-11-23 Micron Technology, Inc. Methods of electrically interconnecting different elevation conductive structures, methods of forming capacitors, methods of forming an interconnect between a substrate bit line contact and a bit line in DRAM, and methods of forming DRAM memory cell
US7230286B2 (en) * 2005-05-23 2007-06-12 International Business Machines Corporation Vertical FET with nanowire channels and a silicided bottom contact
US20100227382A1 (en) * 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (en) * 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
CN100417117C (zh) * 2005-06-15 2008-09-03 华为技术有限公司 自动交换光网络中节点可达性的识别方法
WO2006135336A1 (en) 2005-06-16 2006-12-21 Qunano Ab Semiconductor nanowire transistor
US8163575B2 (en) * 2005-06-17 2012-04-24 Philips Lumileds Lighting Company Llc Grown photonic crystals in semiconductor light emitting devices
WO2007001098A1 (en) * 2005-06-25 2007-01-04 Seoul Opto Device Co., Ltd. Nanostructure having a nitride-based quantum well and light emitting diode employing the same
US7700936B2 (en) * 2005-07-01 2010-04-20 University Of Delaware Fabrication of quantum dots embedded in three-dimensional photonic crystal lattice
EP1949451A4 (en) * 2005-08-22 2016-07-20 Q1 Nanosystems Inc NANOSTRUCTURE AND THIS IMPLEMENTING PHOTOVOLTAIC CELL
US8240190B2 (en) * 2005-08-23 2012-08-14 Uwm Research Foundation, Inc. Ambient-temperature gas sensor
US8268405B2 (en) * 2005-08-23 2012-09-18 Uwm Research Foundation, Inc. Controlled decoration of carbon nanotubes with aerosol nanoparticles
JP2009506546A (ja) * 2005-08-24 2009-02-12 ザ トラスティーズ オブ ボストン カレッジ ナノスケール共金属構造を用いた太陽エネルギー変換のための装置および方法
US7589880B2 (en) * 2005-08-24 2009-09-15 The Trustees Of Boston College Apparatus and methods for manipulating light using nanoscale cometal structures
US7754964B2 (en) * 2005-08-24 2010-07-13 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanocoax structures
US7623746B2 (en) * 2005-08-24 2009-11-24 The Trustees Of Boston College Nanoscale optical microscope
WO2007025023A2 (en) * 2005-08-24 2007-03-01 The Trustees Of Boston College Apparatus and methods for optical switching using nanoscale optics
KR100723384B1 (ko) * 2005-09-06 2007-05-30 삼성에스디아이 주식회사 나노와이어 전자기기소자 및 그 제조방법
ATE529894T1 (de) * 2006-01-25 2011-11-15 Nxp Bv Nanodraht-tunneltransistor
US7570355B2 (en) * 2006-01-27 2009-08-04 Hewlett-Packard Development Company, L.P. Nanowire heterostructures and methods of forming the same
US7826336B2 (en) * 2006-02-23 2010-11-02 Qunano Ab Data storage nanostructures
CN101443265B (zh) * 2006-03-08 2014-03-26 昆南诺股份有限公司 在硅上无金属合成外延半导体纳米线的方法
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
WO2007145701A2 (en) * 2006-04-07 2007-12-21 President And Fellows Of Harvard College Nanoscale wire methods and devices
US7465954B2 (en) * 2006-04-28 2008-12-16 Hewlett-Packard Development Company, L.P. Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles
US9102521B2 (en) * 2006-06-12 2015-08-11 President And Fellows Of Harvard College Nanosensors and related technologies
US7393699B2 (en) 2006-06-12 2008-07-01 Tran Bao Q NANO-electronics
JP2008034483A (ja) * 2006-07-26 2008-02-14 Matsushita Electric Works Ltd 化合物半導体素子およびそれを用いる照明装置ならびに化合物半導体素子の製造方法
JP2008034482A (ja) * 2006-07-26 2008-02-14 Matsushita Electric Works Ltd 化合物半導体発光素子およびそれを用いる照明装置ならびに化合物半導体素子の製造方法
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
US8058640B2 (en) 2006-09-11 2011-11-15 President And Fellows Of Harvard College Branched nanoscale wires
JP5171161B2 (ja) * 2006-09-15 2013-03-27 アイメック ナノワイヤトンネル電界効果トランジスタ半導体装置およびその製造方法
EP1901355B1 (en) * 2006-09-15 2015-11-11 Imec Tunnel effect transistors based on monocrystalline nanowires having a heterostructure
EP1900681B1 (en) * 2006-09-15 2017-03-15 Imec Tunnel Field-Effect Transistors based on silicon nanowires
EP1901354B1 (en) * 2006-09-15 2016-08-24 Imec A tunnel field-effect transistor with gated tunnel barrier
WO2008034823A1 (en) 2006-09-18 2008-03-27 Qunano Ab Method of producing precision vertical and horizontal layers in a vertical semiconductor structure
KR20090075819A (ko) 2006-09-19 2009-07-09 큐나노 에이비 나노스케일 전계 효과 트랜지스터의 조립체
WO2008035273A2 (en) * 2006-09-22 2008-03-27 Koninklijke Philips Electronics N.V. Semiconductor sensor device, diagnostic instrument comprising such a device and method of manufacturing such a device
US7875958B2 (en) * 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
US7872318B2 (en) * 2006-09-29 2011-01-18 Hewlett-Packard Development Company, L.P. Sensing devices and methods for forming the same
US8595654B1 (en) 2006-10-03 2013-11-26 Hrl Laboratories, Llc Semiconductor device coding using quantum dot technology
US7608905B2 (en) * 2006-10-17 2009-10-27 Hewlett-Packard Development Company, L.P. Independently addressable interdigitated nanowires
US20080187018A1 (en) 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
US9360509B2 (en) * 2006-11-17 2016-06-07 Trustees Of Boston College Nanoscale sensors with nanoporous material
WO2008127314A1 (en) 2006-11-22 2008-10-23 President And Fellows Of Harvard College High-sensitivity nanoscale wire sensors
JP4167718B2 (ja) * 2006-12-13 2008-10-22 松下電器産業株式会社 ナノワイヤ及びナノワイヤを備える装置並びにそれらの製造方法
US8227817B2 (en) 2006-12-22 2012-07-24 Qunano Ab Elevated LED
US8049203B2 (en) 2006-12-22 2011-11-01 Qunano Ab Nanoelectronic structure and method of producing such
US7663148B2 (en) * 2006-12-22 2010-02-16 Philips Lumileds Lighting Company, Llc III-nitride light emitting device with reduced strain light emitting layer
US8183587B2 (en) * 2006-12-22 2012-05-22 Qunano Ab LED with upstanding nanowire structure and method of producing such
WO2008079076A1 (en) * 2006-12-22 2008-07-03 Qunano Ab Led with upstanding nanowire structure and method of producing such
CN1996029A (zh) * 2006-12-25 2007-07-11 欧阳征标 THz信号高灵敏度探测器与摄像头
EP2102899B1 (en) * 2007-01-12 2020-11-11 QuNano AB Nitride nanowires and method of producing such
US7566657B2 (en) * 2007-01-17 2009-07-28 Hewlett-Packard Development Company, L.P. Methods of forming through-substrate interconnects
US7544591B2 (en) * 2007-01-18 2009-06-09 Hewlett-Packard Development Company, L.P. Method of creating isolated electrodes in a nanowire-based device
JP4825697B2 (ja) * 2007-01-25 2011-11-30 株式会社ミツトヨ デジタル式変位測定器
EP2115782A1 (en) * 2007-01-30 2009-11-11 Solasta, Inc. Photovoltaic cell and method of making thereof
US20080202581A1 (en) * 2007-02-12 2008-08-28 Solasta, Inc. Photovoltaic cell with reduced hot-carrier cooling
EP2117466B1 (en) 2007-02-28 2017-10-25 The Regents of the University of Colorado, a body corporate Method for stimulating retinal response using photoactive devices
US8120115B2 (en) 2007-03-12 2012-02-21 Imec Tunnel field-effect transistor with gated tunnel barrier
JP4965294B2 (ja) * 2007-03-19 2012-07-04 パナソニック株式会社 半導体発光装置およびそれを用いる照明装置ならびに半導体発光装置の製造方法
JP2010525557A (ja) * 2007-03-28 2010-07-22 クナノ アーベー ナノワイヤ回路構造物
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US9508890B2 (en) * 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8212235B2 (en) * 2007-04-25 2012-07-03 Hewlett-Packard Development Company, L.P. Nanowire-based opto-electronic device
US7880318B1 (en) * 2007-04-27 2011-02-01 Hewlett-Packard Development Company, L.P. Sensing system and method of making the same
US7905013B2 (en) * 2007-06-04 2011-03-15 Sharp Laboratories Of America, Inc. Method for forming an iridium oxide (IrOx) nanowire neural sensor array
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
KR101547711B1 (ko) 2007-06-19 2015-08-26 큐나노 에이비 나노와이어-기반 태양 전지 구조
US7663202B2 (en) * 2007-06-26 2010-02-16 Hewlett-Packard Development Company, L.P. Nanowire photodiodes and methods of making nanowire photodiodes
JP2010532574A (ja) * 2007-07-03 2010-10-07 ソーラスタ インコーポレイテッド 分散型コアックス光起電装置
JP5096824B2 (ja) * 2007-07-24 2012-12-12 日本電信電話株式会社 ナノ構造およびナノ構造の作製方法
US8945304B2 (en) * 2007-08-13 2015-02-03 The Board of Regents of the Nevada System of Higher Education on behalf of the University of Nevada, Las Vegas University of Nevada Ultrahigh vacuum process for the deposition of nanotubes and nanowires
WO2009035746A2 (en) 2007-09-07 2009-03-19 Amberwave Systems Corporation Multi-junction solar cells
JP5247109B2 (ja) * 2007-10-05 2013-07-24 パナソニック株式会社 半導体発光装置およびそれを用いる照明装置ならびに半導体発光装置の製造方法
US7927905B2 (en) * 2007-12-21 2011-04-19 Palo Alto Research Center Incorporated Method of producing microsprings having nanowire tip structures
US7923098B2 (en) * 2008-01-02 2011-04-12 The Board Of Regents Of The University Of Oklahoma Low-defect-density crystalline structure and method for making same
KR100960130B1 (ko) * 2008-01-29 2010-05-27 광주과학기술원 물질 특성 측정 방법 및 장치, 물질 영상화 방법 및 장치
US7776699B2 (en) * 2008-02-05 2010-08-17 Chartered Semiconductor Manufacturing, Ltd. Strained channel transistor structure and method
KR100960691B1 (ko) * 2008-03-05 2010-05-31 전북대학교산학협력단 나노와이어를 이용한 바이폴라-접합 트랜지스터의 제조방법
GB2459251A (en) * 2008-04-01 2009-10-21 Sharp Kk Semiconductor nanowire devices
JP2011523200A (ja) * 2008-04-15 2011-08-04 クナノ アーベー ナノワイヤラップゲートデバイス
US7960715B2 (en) * 2008-04-24 2011-06-14 University Of Iowa Research Foundation Semiconductor heterostructure nanowire devices
US7919764B2 (en) * 2008-05-06 2011-04-05 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for enhanced terahertz radiation from high stacking fault density
US8203127B2 (en) * 2008-05-06 2012-06-19 The United States Of America, As Represented By The Secretary Of The Army Terahertz radiation device using polar semiconductor materials and method of generating terahertz radiation
US7902540B2 (en) * 2008-05-21 2011-03-08 International Business Machines Corporation Fast P-I-N photodetector with high responsitivity
US8491718B2 (en) * 2008-05-28 2013-07-23 Karin Chaudhari Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8212237B2 (en) * 2008-07-09 2012-07-03 Qunano Ab Nanostructured memory device
SE533090C2 (sv) * 2008-07-09 2010-06-22 Qunano Ab Nanostrukturerad ljusdiod
US8138493B2 (en) * 2008-07-09 2012-03-20 Qunano Ab Optoelectronic semiconductor device
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
CN101660207B (zh) * 2008-08-26 2012-03-07 北京有色金属研究总院 一种磷化镓多晶合成方法
US20110115041A1 (en) * 2009-11-19 2011-05-19 Zena Technologies, Inc. Nanowire core-shell light pipes
US8890271B2 (en) 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US8229255B2 (en) * 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US20100304061A1 (en) * 2009-05-26 2010-12-02 Zena Technologies, Inc. Fabrication of high aspect ratio features in a glass layer by etching
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
KR20100028412A (ko) * 2008-09-04 2010-03-12 삼성전자주식회사 나노 막대를 이용한 발광 다이오드 및 그 제조 방법
US9515218B2 (en) * 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US8384007B2 (en) 2009-10-07 2013-02-26 Zena Technologies, Inc. Nano wire based passive pixel image sensor
US8546742B2 (en) * 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US8507840B2 (en) 2010-12-21 2013-08-13 Zena Technologies, Inc. Vertically structured passive pixel arrays and methods for fabricating the same
US8357960B1 (en) * 2008-09-18 2013-01-22 Banpil Photonics, Inc. Multispectral imaging device and manufacturing thereof
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
WO2010033813A2 (en) 2008-09-19 2010-03-25 Amberwave System Corporation Formation of devices by epitaxial layer overgrowth
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
WO2010039631A1 (en) * 2008-09-30 2010-04-08 The Regents Of The University Of California Photonic crystal solar cell
US8228129B2 (en) * 2008-11-06 2012-07-24 Raytheon Company Photonic crystal resonant defect cavities with nano-scale oscillators for generation of terahertz or infrared radiation
TWI382551B (zh) * 2008-11-06 2013-01-11 Ind Tech Res Inst 太陽能集光模組
US8261557B2 (en) * 2008-12-05 2012-09-11 Raytheon Company Heat transfer devices based on thermodynamic cycling of a photonic crystal with coupled resonant defect cavities
SE533531C2 (sv) 2008-12-19 2010-10-19 Glo Ab Nanostrukturerad anordning
US10022543B2 (en) 2009-01-13 2018-07-17 The Regents Of The University Of Colorado, A Body Corporate Cell stimulation using quantum dots
FR2941688B1 (fr) * 2009-01-30 2011-04-01 Commissariat Energie Atomique Procede de formation de nano-fils
JP2010182824A (ja) * 2009-02-04 2010-08-19 Toshiba Corp 磁気ランダムアクセスメモリの製造方法及び混載メモリの製造方法
WO2010110733A1 (en) 2009-03-25 2010-09-30 Glo Ab A schottky device
SG171987A1 (en) 2009-04-02 2011-07-28 Taiwan Semiconductor Mfg Devices formed from a non-polar plane of a crystalline material and method of making the same
CN102484147B (zh) 2009-04-15 2015-11-25 索尔伏打电流公司 具有纳米线的多结光生伏打电池
CN101893659B (zh) * 2009-05-19 2012-06-20 清华大学 电磁波偏振方向检测方法及检测装置
US8809672B2 (en) * 2009-05-27 2014-08-19 The Regents Of The University Of California Nanoneedle plasmonic photodetectors and solar cells
AU2010275863A1 (en) 2009-07-23 2012-02-09 Commissariat A L'energie Atomique An electrically driven single photon source
US8337943B2 (en) * 2009-08-31 2012-12-25 Corning Incorporated Nano-whisker growth and films
US9297796B2 (en) 2009-09-24 2016-03-29 President And Fellows Of Harvard College Bent nanowires and related probing of species
KR20120099441A (ko) 2009-10-22 2012-09-10 솔 발테익스 에이비 나노와이어 터널 다이오드 및 이의 제조 방법
US8563395B2 (en) * 2009-11-30 2013-10-22 The Royal Institute For The Advancement Of Learning/Mcgill University Method of growing uniform semiconductor nanowires without foreign metal catalyst and devices thereof
US9112085B2 (en) * 2009-11-30 2015-08-18 The Royal Institution For The Advancement Of Learning/Mcgill University High efficiency broadband semiconductor nanowire devices
CN102770367B (zh) 2009-12-22 2015-08-19 昆南诺股份有限公司 用于制备纳米线结构的方法
KR100974626B1 (ko) * 2009-12-22 2010-08-09 동국대학교 산학협력단 접촉 구조의 나노로드 반도체 소자 및 그 제조 방법
TWI466816B (zh) * 2009-12-30 2015-01-01 東海大學 筆直直立奈米線陣列結構及其製造方法
US9202954B2 (en) * 2010-03-03 2015-12-01 Q1 Nanosystems Corporation Nanostructure and photovoltaic cell implementing same
CN107090593A (zh) * 2010-05-11 2017-08-25 昆南诺股份有限公司 线的气相合成
US8772080B2 (en) * 2010-06-15 2014-07-08 Tel Solar Ag Photovoltaic cell and methods for producing a photovoltaic cell
SG186261A1 (en) 2010-06-18 2013-01-30 Glo Ab Nanowire led structure and method for manufacturing the same
JP2012023343A (ja) * 2010-06-18 2012-02-02 Semiconductor Energy Lab Co Ltd 光電変換装置及びその作製方法
SG186312A1 (en) 2010-06-24 2013-02-28 Glo Ab Substrate with buffer layer for oriented nanowire growth
JP5841752B2 (ja) * 2010-07-02 2016-01-13 株式会社半導体エネルギー研究所 半導体装置
CN101949844B (zh) * 2010-08-25 2012-07-25 中国科学院上海微系统与信息技术研究所 一种改善半导体材料光致发光测试效果的测试系统
US8450690B2 (en) 2010-10-04 2013-05-28 Trustees Of Boston University Thermal imager using metamaterials
GB201021112D0 (en) 2010-12-13 2011-01-26 Ntnu Technology Transfer As Nanowires
US8647915B2 (en) 2010-12-21 2014-02-11 Ut-Battelle, Llc Hetero-junction photovoltaic device and method of fabricating the device
WO2012106326A1 (en) * 2011-01-31 2012-08-09 The Regents Of The University Of California Using millisecond pulsed laser welding in mems packaging
CN103443023B (zh) 2011-02-01 2016-04-20 昆南诺股份有限公司 用于操纵带电分子的纳米线设备
KR101209357B1 (ko) * 2011-03-23 2012-12-06 서울대학교산학협력단 나노와이어 광 검출기를 이용한 인공 망막 시스템 및 그 제조 방법
CN102185058B (zh) * 2011-04-02 2013-09-25 映瑞光电科技(上海)有限公司 一种氮化物led结构及其制备方法
CN102185060B (zh) * 2011-04-15 2014-07-16 映瑞光电科技(上海)有限公司 一种氮化物led结构及其制备方法
US9795787B2 (en) 2011-05-16 2017-10-24 Seoul National University R&Db Foundation Retinal prosthesis system using nanowire light detector, and manufacturing method thereof
US9064808B2 (en) 2011-07-25 2015-06-23 Synopsys, Inc. Integrated circuit devices having features with reduced edge curvature and methods for manufacturing the same
CN102916343B (zh) * 2011-08-05 2015-07-15 苏州大学 一种量子点材料的制作装置及制作方法
US20130051530A1 (en) * 2011-08-30 2013-02-28 Fujifilm Corporation High Aspect Ratio Grid for Phase Contrast X-ray Imaging and Method of Making the Same
US8609550B2 (en) * 2011-09-08 2013-12-17 Synopsys, Inc. Methods for manufacturing integrated circuit devices having features with reduced edge curvature
US8350251B1 (en) 2011-09-26 2013-01-08 Glo Ab Nanowire sized opto-electronic structure and method for manufacturing the same
CN103030096A (zh) * 2011-10-09 2013-04-10 中国科学院高能物理研究所 一种具有纳米结构表面的硅材料及其制作方法
US20130092222A1 (en) * 2011-10-14 2013-04-18 Nanograss Solar Llc Nanostructured Solar Cells Utilizing Charge Plasma
CN102420244B (zh) * 2011-11-14 2013-10-09 清华大学 一种一维金属/半导体纳米异质结晶体管及其制备方法
EP2793997B1 (en) 2011-11-30 2017-12-27 Neuronano AB Nanowire-based devices for light-induced and electrical stimulation of biological cells
TWI506801B (zh) 2011-12-09 2015-11-01 鴻海精密工業股份有限公司 太陽能電池組
CN103165719B (zh) 2011-12-16 2016-04-13 清华大学 太阳能电池
CN103165690B (zh) 2011-12-16 2015-11-25 清华大学 太阳能电池
KR101779031B1 (ko) 2011-12-19 2017-09-18 인텔 코포레이션 수직 트랜지스터와 그 제조방법, 및 고전압 트랜지스터
CN103187456B (zh) 2011-12-29 2015-08-26 清华大学 太阳能电池
CN103187476B (zh) 2011-12-29 2016-06-15 清华大学 太阳能电池的制备方法
CN103187453B (zh) 2011-12-29 2016-04-13 清华大学 太阳能电池
WO2013114218A2 (en) * 2012-02-03 2013-08-08 Qunano Ab High-throughput continuous gas-phase synthesis of nanowires with tunable properties
WO2013118048A1 (en) * 2012-02-07 2013-08-15 Koninklijke Philips N.V. Flexible nanowire based solar cell
WO2013121289A2 (en) 2012-02-14 2013-08-22 Qunano Ab Gallium nitride nanowire based electronics
US10090425B2 (en) * 2012-02-21 2018-10-02 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
US9425254B1 (en) * 2012-04-04 2016-08-23 Ball Aerospace & Technologies Corp. Hybrid integrated nanotube and nanostructure substrate systems and methods
JP2013239690A (ja) * 2012-04-16 2013-11-28 Sharp Corp 超格子構造、前記超格子構造を備えた半導体装置および半導体発光装置、ならびに前記超格子構造の製造方法
JP6219933B2 (ja) * 2012-05-25 2017-10-25 ソル ヴォルテイックス エービーＳｏｌ Ｖｏｌｔａｉｃｓ Ａｂ 同心流反応装置
CN104508825A (zh) 2012-06-07 2015-04-08 昆南诺股份有限公司 制造适于转移到非晶体层的结构的方法以及利用所述方法制造的结构
GB201211038D0 (en) 2012-06-21 2012-08-01 Norwegian Univ Sci & Tech Ntnu Solar cells
JP6290199B2 (ja) 2012-07-06 2018-03-07 クナノ・アーベー 径方向ナノワイヤエサキダイオードデバイスおよび方法
US20150259825A1 (en) * 2012-09-04 2015-09-17 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Method and apparatus for the fabrication of nanostructures, network of interconnected nanostructures and nanostructure
JP6322197B2 (ja) 2012-10-26 2018-05-09 グロ アーベーＧｌｏ Ａｂ ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。
EP2912699B1 (en) 2012-10-26 2019-12-18 Glo Ab Method for modifying selected portions of nanowire sized opto-electronic structure
KR20150103661A (ko) 2012-10-26 2015-09-11 글로 에이비 나노와이어 led 구조 및 이를 제조하는 방법
FR2997420B1 (fr) 2012-10-26 2017-02-24 Commissariat Energie Atomique Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
FR2997557B1 (fr) 2012-10-26 2016-01-01 Commissariat Energie Atomique Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositif
CN103043600B (zh) * 2012-12-13 2015-03-25 中国科学院物理研究所 基于薄膜材料的三维自支撑微纳米功能结构的制备方法
DE102012025088A1 (de) * 2012-12-20 2014-06-26 Forschungszentrum Jülich GmbH Massenfertigungstaugliche Einzelphotonenquelle und Herstellungsverfahren
US9082911B2 (en) 2013-01-28 2015-07-14 Q1 Nanosystems Corporation Three-dimensional metamaterial device with photovoltaic bristles
DE102013204475A1 (de) 2013-03-14 2014-09-18 Robert Bosch Gmbh Herstellungsverfahren für ein mikromechanisches Bauelement und entsprechendes mikromechanisches Bauelement
US9954126B2 (en) 2013-03-14 2018-04-24 Q1 Nanosystems Corporation Three-dimensional photovoltaic devices including cavity-containing cores and methods of manufacture
US20140264998A1 (en) 2013-03-14 2014-09-18 Q1 Nanosystems Corporation Methods for manufacturing three-dimensional metamaterial devices with photovoltaic bristles
EP2973752A4 (en) 2013-03-15 2016-11-09 Glo Ab DIELECTRIC FILM WITH HIGH BREAKING INDEX TO INCREASE EXTRACTION EFFICIENCY OF NANODRAHT LEADS
WO2014143991A1 (en) 2013-03-15 2014-09-18 Glo Ab Nanowire led structure with decreased leakage and method of making same
US20140342254A1 (en) * 2013-05-17 2014-11-20 Sunpower Technologies Llc Photo-catalytic Systems for Production of Hydrogen
US9196787B2 (en) 2013-06-07 2015-11-24 Glo Ab Nanowire LED structure with decreased leakage and method of making same
TW201515269A (zh) 2013-06-18 2015-04-16 Glo公司 用於平整化及界定奈米線裝置之活化區的絕緣層
GB201311101D0 (en) 2013-06-21 2013-08-07 Norwegian Univ Sci & Tech Ntnu Semiconducting Films
US9142745B2 (en) 2013-08-27 2015-09-22 Glo Ab Packaged LED device with castellations
US9257616B2 (en) 2013-08-27 2016-02-09 Glo Ab Molded LED package and method of making same
US8999737B2 (en) 2013-08-27 2015-04-07 Glo Ab Method of making molded LED package
US9112130B2 (en) 2013-11-01 2015-08-18 Samsung Electronics Co., Ltd. Quantum interference based logic devices including electron monochromator
WO2015088904A1 (en) 2013-12-09 2015-06-18 Glo Ab Optical display system
WO2015089123A1 (en) 2013-12-13 2015-06-18 Glo Ab Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire leds
US9287516B2 (en) * 2014-04-07 2016-03-15 International Business Machines Corporation Forming pn junction contacts by different dielectrics
CN103943725B (zh) * 2014-04-18 2016-06-01 上海师范大学 一种金属氧化物纳米晶须/Si复合材料及其催化生长方法
US9343569B2 (en) 2014-05-21 2016-05-17 International Business Machines Corporation Vertical compound semiconductor field effect transistor on a group IV semiconductor substrate
JP6158248B2 (ja) * 2014-05-27 2017-07-05 ザ・ボード・オブ・トラスティーズ・オブ・ザ・ユニバーシティ・オブ・イリノイＴｈｅ Ｂｏａｒｄ Ｏｆ Ｔｒｕｓｔｅｅｓ Ｏｆ Ｔｈｅ Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｉｌｌｉｎｏｉｓ ナノ構造材料の方法および素子
US10828400B2 (en) 2014-06-10 2020-11-10 The Research Foundation For The State University Of New York Low temperature, nanostructured ceramic coatings
US9951420B2 (en) 2014-11-10 2018-04-24 Sol Voltaics Ab Nanowire growth system having nanoparticles aerosol generator
JP6271401B2 (ja) * 2014-11-20 2018-01-31 日本電信電話株式会社 量子ドットナノワイヤの製造方法
CN105845741A (zh) * 2015-01-12 2016-08-10 中国科学院苏州纳米技术与纳米仿生研究所 基于InGaAs/AlAs材料的共振隧穿二极管
EP3314045A1 (en) * 2015-06-26 2018-05-02 The University of Copenhagen Network of nanostructures as grown on a substrate
TWI772266B (zh) * 2015-07-13 2022-08-01 挪威商卡亞奈米公司 發光二極體裝置及光偵測器裝置
EA201890168A1 (ru) * 2015-07-13 2018-08-31 Крайонано Ас Нанопроволока или нанопирамидки, выращенные на графитовой подложке
CA2993884A1 (en) * 2015-07-31 2017-02-09 Crayonano As Process for growing nanowires or nanopyramids on graphitic substrates
WO2017038698A1 (ja) 2015-08-28 2017-03-09 京セラ株式会社 光電変換装置
WO2017044637A1 (en) * 2015-09-08 2017-03-16 University Of Washington Low contrast silicon nitride-based metasurfaces
FR3041202B1 (fr) * 2015-09-14 2017-09-15 Valeo Vision Source lumineuse led a micro- ou nano-fils comprenant des moyens de mesure de la temperature
JP6873409B2 (ja) * 2016-04-21 2021-05-19 富士通株式会社 発光素子及びその製造方法
EP3446330A4 (en) 2016-04-22 2019-12-18 Glo Ab DIRECT VIEW DISPLAY WITH A SMALL TILTING ANGLE AND METHOD FOR PRODUCING THE SAME
WO2018022154A2 (en) * 2016-04-25 2018-02-01 Stc. Unm Rugged, single crystal wide-band-gap-material-scanning-tunneling microscopy/lithography tips
WO2017215770A1 (en) * 2016-06-13 2017-12-21 Heiner Linke A photodetector and a method for producing a photocurrent using the photodetector
KR102581662B1 (ko) * 2016-06-30 2023-09-22 고쿠리츠 다이가쿠 호진 교토 다이가쿠 탐침의 제조 방법 및 탐침
JP6669608B2 (ja) * 2016-08-03 2020-03-18 日本電信電話株式会社 半導体ナノワイヤレーザーおよびその製造方法
US9952097B1 (en) * 2016-10-25 2018-04-24 Institut National D'optique Infrared scene projector and conversion chip therefore
DE102016121462A1 (de) * 2016-11-09 2018-05-09 Aixtron Se Strukturierte Keimschicht
CN106653952B (zh) * 2017-01-17 2018-05-08 南京大学 一种硅的中红外抗反射微结构的制备方法
GB201705755D0 (en) 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
CN107154447B (zh) * 2017-05-24 2024-01-30 中国电子科技集团公司第十三研究所 一种硅基探测器及其制备方法
CN109427488A (zh) * 2017-08-28 2019-03-05 絜静精微有限公司 结合电化学及纳米转印的薄膜太阳能电池磊晶法
WO2019055134A1 (en) * 2017-09-15 2019-03-21 Commscope Technologies Llc METHODS FOR PREPARING COMPOSITE DIELECTRIC MATERIAL
KR20190074067A (ko) * 2017-12-19 2019-06-27 삼성전자주식회사 발광소자 패키지
CN108470674B (zh) * 2018-01-16 2020-07-14 长春理工大学 一种利用应力调控实现纯相GaAs纳米线的制备方法
JP6863909B2 (ja) * 2018-01-18 2021-04-21 日本電信電話株式会社 ナノワイヤ光デバイス
US10854714B2 (en) * 2018-04-20 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium containing nanowires and methods for forming the same
US11402672B2 (en) * 2018-05-03 2022-08-02 X Development Llc Quantum confined nanostructures with improved homogeneity and methods for making the same
US11139402B2 (en) 2018-05-14 2021-10-05 Synopsys, Inc. Crystal orientation engineering to achieve consistent nanowire shapes
KR102057700B1 (ko) * 2018-05-18 2019-12-19 연세대학교 산학협력단 층상형 GaAs, 이의 제조 방법 및 이로부터 박리된 GaAs 나노시트
CN109103271B (zh) * 2018-07-16 2020-11-20 中国空间技术研究院 一种基于纳米碳材料/硅异质结的x射线探测器及其制备方法
TWI912224B (zh) * 2018-12-24 2026-01-11 晶元光電股份有限公司 半導體元件
CA3131807C (en) * 2019-03-08 2024-03-26 Infinite Potential Laboratories Lp Quantum control devices and methods
US11264458B2 (en) 2019-05-20 2022-03-01 Synopsys, Inc. Crystal orientation engineering to achieve consistent nanowire shapes
CN110272016B (zh) * 2019-06-24 2022-05-20 西安交通大学 一种固体表面三维纳米结构的构筑方法
GB201913701D0 (en) 2019-09-23 2019-11-06 Crayonano As Composition of matter
TWI740241B (zh) * 2019-10-22 2021-09-21 國立勤益科技大學 可撓式可見光檢測器之製造方法
ES2909787T3 (es) * 2019-12-13 2022-05-10 Centre Nat Rech Scient Transductor fotoconductor tridimensional para señales de terahercios o pulsos eléctricos de picosegundos
US11695100B2 (en) 2020-01-21 2023-07-04 Nanosys, Inc. Light emitting diode containing a grating and methods of making the same
CN111446618B (zh) * 2020-02-27 2021-03-05 电子科技大学 一种三端式8字环形量子级联激光器
CN115428166B (zh) * 2020-04-15 2026-04-14 富士通株式会社 半导体装置、储层计算系统以及半导体装置的制造方法
TWI759872B (zh) * 2020-09-21 2022-04-01 行政院原子能委員會核能研究所 太陽能電池之量測裝置
US12131957B2 (en) 2021-01-28 2024-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Manufacturing process with atomic level inspection
KR102665449B1 (ko) * 2021-11-03 2024-05-10 (재)한국나노기술원 화합물 반도체 나노로드의 제조방법, 이를 이용하여 제조된 화합물 반도체 나노로드 및 화합물 반도체 나노로드 어레이
CN114236340B (zh) * 2021-12-20 2024-12-03 西安电子科技大学芜湖研究院 一种基于反向i-v特性的二极管漏电分析方法
TWI809959B (zh) * 2022-06-30 2023-07-21 南亞科技股份有限公司 偏移量測設備及其操作方法
KR102814531B1 (ko) 2022-10-04 2025-05-28 연세대학교 산학협력단 단일 원자 치환을 통한 양자 터널링 기반으로 전자적 또는 광학적으로 동작하는 분자 소자
CN116053729B (zh) * 2023-03-31 2023-06-20 南京大学 基于纳米磁体阵列的可重构自旋波传输通道

Family Cites Families (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58191421A (ja) * 1982-05-04 1983-11-08 Nec Corp 化合物半導体成長用基板と化合物半導体の製造方法
FR2658839B1 (fr) 1990-02-23 1997-06-20 Thomson Csf Procede de croissance controlee de cristaux aciculaires et application a la realisation de microcathodes a pointes.
US5362972A (en) 1990-04-20 1994-11-08 Hitachi, Ltd. Semiconductor device using whiskers
US5332910A (en) 1991-03-22 1994-07-26 Hitachi, Ltd. Semiconductor optical device with nanowhiskers
JPH04296060A (ja) * 1991-03-26 1992-10-20 Hitachi Ltd 太陽電池
JPH059099A (ja) 1991-06-28 1993-01-19 Canon Inc 結晶の成長方法
US5196396A (en) 1991-07-16 1993-03-23 The President And Fellows Of Harvard College Method of making a superconducting fullerene composition by reacting a fullerene with an alloy containing alkali metal
US5296719A (en) * 1991-07-22 1994-03-22 Matsushita Electric Industrial Co., Ltd. Quantum device and fabrication method thereof
JPH0555502A (ja) * 1991-08-29 1993-03-05 Hitachi Ltd 量子結合メモリ
JPH0585899A (ja) 1991-10-01 1993-04-06 Nippon Telegr & Teleph Corp <Ntt> 針状単結晶の作製法
US5362910A (en) * 1991-10-08 1994-11-08 Nicca Chemical Co., Ltd. Germicidal and fungicidal agent and a germicidal and fungicidal method
JP2697474B2 (ja) 1992-04-30 1998-01-14 松下電器産業株式会社 微細構造の製造方法
JP2821061B2 (ja) 1992-05-22 1998-11-05 電気化学工業株式会社 単結晶の製造方法
US5252835A (en) 1992-07-17 1993-10-12 President And Trustees Of Harvard College Machining oxide thin-films with an atomic force microscope: pattern and object formation on the nanometer scale
AU8070294A (en) 1993-07-15 1995-02-13 President And Fellows Of Harvard College Extended nitride material comprising beta -c3n4
JPH07211951A (ja) 1994-01-21 1995-08-11 Sanyo Electric Co Ltd 薄膜形成方法
JP2615437B2 (ja) * 1994-09-20 1997-05-28 工業技術院長 高強度・高靱性窒化ケイ素焼結体及びその製造方法
GB9421138D0 (en) 1994-10-20 1994-12-07 Hitachi Europ Ltd Memory device
US6190634B1 (en) 1995-06-07 2001-02-20 President And Fellows Of Harvard College Carbide nanomaterials
US6307241B1 (en) 1995-06-07 2001-10-23 The Regents Of The Unversity Of California Integrable ferromagnets for high density storage
US6036774A (en) 1996-02-26 2000-03-14 President And Fellows Of Harvard College Method of producing metal oxide nanorods
US5897945A (en) 1996-02-26 1999-04-27 President And Fellows Of Harvard College Metal oxide nanorods
JP2923753B2 (ja) * 1996-08-21 1999-07-26 工業技術院長 Ｉｉｉ族原子層の形成方法
JPH10106960A (ja) 1996-09-25 1998-04-24 Sony Corp 量子細線の製造方法
US5976957A (en) 1996-10-28 1999-11-02 Sony Corporation Method of making silicon quantum wires on a substrate
US5997832A (en) 1997-03-07 1999-12-07 President And Fellows Of Harvard College Preparation of carbide nanorods
JP3183845B2 (ja) * 1997-03-21 2001-07-09 財団法人ファインセラミックスセンター カーボンナノチューブ及びカーボンナノチューブ膜の製造方法
US6231744B1 (en) * 1997-04-24 2001-05-15 Massachusetts Institute Of Technology Process for fabricating an array of nanowires
KR100223807B1 (ko) 1997-06-04 1999-10-15 구본준 반도체 소자의 제조방법
JPH1160389A (ja) 1997-08-07 1999-03-02 Denso Corp 炭化珪素単結晶の製造方法
US5879827A (en) * 1997-10-10 1999-03-09 Minnesota Mining And Manufacturing Company Catalyst for membrane electrode assembly and method of making
JPH11177067A (ja) * 1997-12-09 1999-07-02 Sony Corp メモリ素子およびメモリアレイ
JP4651138B2 (ja) * 1998-04-30 2011-03-16 旭化成株式会社 酸化亜鉛構造体の製造方法
US6159742A (en) 1998-06-05 2000-12-12 President And Fellows Of Harvard College Nanometer-scale microscopy probes
JP4362874B2 (ja) 1998-08-24 2009-11-11 ソニー株式会社 量子構造体を有する半導体素子とその製造方法
US6855202B2 (en) 2001-11-30 2005-02-15 The Regents Of The University Of California Shaped nanocrystal particles and methods for making the same
CN1086426C (zh) * 1999-01-07 2002-06-19 南京化工大学 六钛酸钾晶须及纤维的制造方法
US6559468B1 (en) 1999-03-29 2003-05-06 Hewlett-Packard Development Company Lp Molecular wire transistor (MWT)
US6358854B1 (en) * 1999-04-21 2002-03-19 Sandia Corporation Method to fabricate layered material compositions
JP4259677B2 (ja) * 1999-06-30 2009-04-30 旭化成株式会社 特定の位置に突起物を有する金属酸化物構造体及びその製造方法
WO2001003208A1 (en) 1999-07-02 2001-01-11 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
JP2001020073A (ja) * 1999-07-06 2001-01-23 Asahi Chem Ind Co Ltd 積層した突起物を有する金属酸化物
US6322713B1 (en) 1999-07-15 2001-11-27 Agere Systems Guardian Corp. Nanoscale conductive connectors and method for making same
CN1112466C (zh) * 1999-07-21 2003-06-25 中国科学院山西煤炭化学研究所 一种直径为纳米级的碳化硅晶须的制备方法
US6286226B1 (en) 1999-09-24 2001-09-11 Agere Systems Guardian Corp. Tactile sensor comprising nanowires and method for making the same
US6340822B1 (en) * 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
JP2001114600A (ja) * 1999-10-14 2001-04-24 Asahi Kasei Corp 金属酸化物構造体及びその製造方法
GB0008546D0 (en) 2000-04-06 2000-05-24 Btg Int Ltd Optoelectronic devices
US7223444B2 (en) 2000-05-04 2007-05-29 Qunano Ab Particle deposition apparatus and methods for forming nanostructures
US6919119B2 (en) * 2000-05-30 2005-07-19 The Penn State Research Foundation Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films
WO2002001648A1 (en) 2000-06-28 2002-01-03 Motorola, Inc. Semiconductor structure, device, circuit, and process
WO2003005450A2 (en) 2001-05-18 2003-01-16 President And Fellows Of Harvard College Nanoscale wires and related devices
CN101887935B (zh) 2000-08-22 2013-09-11 哈佛学院董事会 掺杂的拉长半导体,其生长,包含这类半导体的器件及其制造
US7301199B2 (en) 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
US6620710B1 (en) * 2000-09-18 2003-09-16 Hewlett-Packard Development Company, L.P. Forming a single crystal semiconductor film on a non-crystalline surface
WO2002022499A1 (en) 2000-09-18 2002-03-21 President And Fellows Of Harvard College Fabrication of nanotube microscopy tips
AU2001294876A1 (en) 2000-09-29 2002-04-08 President And Fellows Of Harvard College Direct growth of nanotubes, and their use in nanotweezers
JP2002141633A (ja) * 2000-10-25 2002-05-17 Lucent Technol Inc 垂直にナノ相互接続された回路デバイスからなる製品及びその製造方法
KR20030055346A (ko) 2000-12-11 2003-07-02 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
JP2002220300A (ja) 2001-01-18 2002-08-09 Vision Arts Kk ナノファイバーおよびナノファイバーの作製方法
US7189435B2 (en) * 2001-03-14 2007-03-13 University Of Massachusetts Nanofabrication
EP1374309A1 (en) 2001-03-30 2004-01-02 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
DE10118405A1 (de) * 2001-04-12 2002-10-24 Infineon Technologies Ag Heterostruktur-Bauelement
US7084507B2 (en) * 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
WO2003040446A2 (en) 2001-06-15 2003-05-15 The Pennsylvania State Research Foundation Method of purifying nanotubes and nanofibers using electromagnetic radiation
US6813077B2 (en) * 2001-06-19 2004-11-02 Corning Incorporated Method for fabricating an integrated optical isolator and a novel wire grid structure
DE60234776D1 (de) 2001-07-20 2010-01-28 Harvard College Übergangsmetalloxid-nanodrähte und diese enthaltende vorrichtungen
US6586965B2 (en) 2001-10-29 2003-07-01 Hewlett Packard Development Company Lp Molecular crossbar latch
US6882767B2 (en) 2001-12-27 2005-04-19 The Regents Of The University Of California Nanowire optoelectric switching device and method
EP1468423A2 (en) 2002-01-18 2004-10-20 California Institute Of Technology Array-based architecture for molecular electronics
US6759693B2 (en) * 2002-06-19 2004-07-06 Nantero, Inc. Nanotube permeable base transistor
WO2004028952A2 (en) * 2002-06-26 2004-04-08 Cornell Research Foundation, Inc. Small scale wires with microelectromechanical devices
US20040003838A1 (en) * 2002-07-05 2004-01-08 Curtin Lawrence F. Nano photovoltaic/solar cells
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
AU2003261205A1 (en) 2002-07-19 2004-02-09 President And Fellows Of Harvard College Nanoscale coherent optical components
WO2004088755A1 (en) 2003-04-04 2004-10-14 Startskottet 22286 Ab Nanowhiskers with pn junctions and methods of fabricating thereof
CA2522358A1 (en) 2003-04-04 2004-10-14 Startskottet 22286 Ab Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
JP2007527507A (ja) 2003-07-08 2007-09-27 キューナノ エービー ナノウィスカーを組み込んだプローブ構造体、その製造方法及びナノウィスカーを形成する方法
US7662706B2 (en) 2003-11-26 2010-02-16 Qunano Ab Nanostructures formed of branched nanowhiskers and methods of producing the same
US7208094B2 (en) 2003-12-17 2007-04-24 Hewlett-Packard Development Company, L.P. Methods of bridging lateral nanowires and device using same
US7354850B2 (en) 2004-02-06 2008-04-08 Qunano Ab Directionally controlled growth of nanowhiskers
US7528002B2 (en) 2004-06-25 2009-05-05 Qunano Ab Formation of nanowhiskers on a substrate of dissimilar material
US20060223211A1 (en) 2004-12-02 2006-10-05 The Regents Of The University Of California Semiconductor devices based on coalesced nano-rod arrays
WO2006135336A1 (en) 2005-06-16 2006-12-21 Qunano Ab Semiconductor nanowire transistor
US7826336B2 (en) 2006-02-23 2010-11-02 Qunano Ab Data storage nanostructures
US8183587B2 (en) 2006-12-22 2012-05-22 Qunano Ab LED with upstanding nanowire structure and method of producing such
US8049203B2 (en) 2006-12-22 2011-11-01 Qunano Ab Nanoelectronic structure and method of producing such

Similar Documents

Publication Publication Date Title
JP4948766B2 (ja) 光電子デバイス、太陽電池、及びフォトディテクタ
JP2005532181A5 (https=)
Güniat et al. Vapor phase growth of semiconductor nanowires: key developments and open questions
Ross Controlling nanowire structures through real time growth studies
Nikoobakht et al. Scalable synthesis and device integration of self-registered one-dimensional zinc oxide nanostructures and related materials
EP2273552A2 (en) Methods of fabricating nanstructures and nanowires and devices fabricated therefrom
CN1826662A (zh) 包括纳米晶须的探针结构、其制造方法以及形成纳米晶须的方法
WO2005027201A1 (en) Method of fabrication and device comprising elongated nanosize elements
US8810009B2 (en) Method of fabricating a planar semiconductor nanowire
Picraux et al. Silicon and germanium nanowires: Growth, properties, and integration
Li et al. Growth of III-V semiconductor nanowires and their heterostructures
Harmand et al. Potential of semiconductor nanowires for single photon sources
HK1135798B (en) Nanostructures and methods for manufacturing the same
Samuelson et al. Epitaxial Quantum Wires: Growth, Properties and Applications
Björk et al. Epitaxial Quantum Wires: Growth, Properties and Applications
Thelander et al. Electrical Properties of InAs‐Based Nanowires
Aichele et al. Nanowire quantum dots
Radhakrishnan et al. Epitaxial growth of III–V semiconductor vertical and tilted nanowires on silicon