JP2004525518A5 - - Google Patents

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Publication number
JP2004525518A5
JP2004525518A5 JP2002578542A JP2002578542A JP2004525518A5 JP 2004525518 A5 JP2004525518 A5 JP 2004525518A5 JP 2002578542 A JP2002578542 A JP 2002578542A JP 2002578542 A JP2002578542 A JP 2002578542A JP 2004525518 A5 JP2004525518 A5 JP 2004525518A5
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Japan
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group iii
zone
iii metal
source
growth
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JP2002578542A
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JP2004525518A (ja
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Priority claimed from PCT/US2002/010158 external-priority patent/WO2002080225A2/en
Publication of JP2004525518A publication Critical patent/JP2004525518A/ja
Publication of JP2004525518A5 publication Critical patent/JP2004525518A5/ja
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JP2002578542A 2001-03-30 2002-03-28 Ｈｖｐｅ技術を使用したサブミクロンｉｉｉ属窒化物構造を成長させる方法および装置 Pending JP2004525518A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US28060401P 2001-03-30 2001-03-30
US28374301P 2001-04-13 2001-04-13
PCT/US2002/010158 WO2002080225A2 (en) 2001-03-30 2002-03-28 Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques

Publications (2)

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JP2004525518A JP2004525518A (ja) 2004-08-19
JP2004525518A5 true JP2004525518A5 (enExample) 2005-12-22

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JP2002578542A Pending JP2004525518A (ja) 2001-03-30 2002-03-28 Ｈｖｐｅ技術を使用したサブミクロンｉｉｉ属窒化物構造を成長させる方法および装置

Country Status (5)

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US (6) US6706119B2 (enExample)
EP (2) EP1381718A4 (enExample)
JP (1) JP2004525518A (enExample)
AU (1) AU2002252566A1 (enExample)
WO (1) WO2002080225A2 (enExample)

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