JP2004525518A - Ｈｖｐｅ技術を使用したサブミクロンｉｉｉ属窒化物構造を成長させる方法および装置 - Google Patents

Ｈｖｐｅ技術を使用したサブミクロンｉｉｉ属窒化物構造を成長させる方法および装置 Download PDF

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JP2004525518A
JP2004525518A JP2002578542A JP2002578542A JP2004525518A JP 2004525518 A JP2004525518 A JP 2004525518A JP 2002578542 A JP2002578542 A JP 2002578542A JP 2002578542 A JP2002578542 A JP 2002578542A JP 2004525518 A JP2004525518 A JP 2004525518A
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group iii
zone
iii metal
source
growth
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JP2004525518A5 (enExample
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デニス ブイ． ツベトコフ，
アンドレイ イー． ニコラエフ，
ブラッディミール エイ． ドミトリフ，
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テクノロジーズ アンド デバイス インターナショナル インコーポレイテッド
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
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JP2002578542A 2001-03-30 2002-03-28 Ｈｖｐｅ技術を使用したサブミクロンｉｉｉ属窒化物構造を成長させる方法および装置 Pending JP2004525518A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US28060401P 2001-03-30 2001-03-30
US28374301P 2001-04-13 2001-04-13
PCT/US2002/010158 WO2002080225A2 (en) 2001-03-30 2002-03-28 Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques

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JP2004525518A true JP2004525518A (ja) 2004-08-19
JP2004525518A5 JP2004525518A5 (enExample) 2005-12-22

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US (6) US6706119B2 (enExample)
EP (2) EP1381718A4 (enExample)
JP (1) JP2004525518A (enExample)
AU (1) AU2002252566A1 (enExample)
WO (1) WO2002080225A2 (enExample)

Families Citing this family (114)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6706119B2 (en) * 2001-03-30 2004-03-16 Technologies And Devices International, Inc. Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE
US6613143B1 (en) * 2001-07-06 2003-09-02 Technologies And Devices International, Inc. Method for fabricating bulk GaN single crystals
US20060011135A1 (en) * 2001-07-06 2006-01-19 Dmitriev Vladimir A HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US6936357B2 (en) * 2001-07-06 2005-08-30 Technologies And Devices International, Inc. Bulk GaN and ALGaN single crystals
US20070032046A1 (en) * 2001-07-06 2007-02-08 Dmitriev Vladimir A Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby
US20070031440A1 (en) * 2001-08-30 2007-02-08 Prior Christopher P Modified transferin-antibody fusion proteins
US20030111013A1 (en) * 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
US6774019B2 (en) * 2002-05-17 2004-08-10 International Business Machines Corporation Incorporation of an impurity into a thin film
US8089097B2 (en) * 2002-12-27 2012-01-03 Momentive Performance Materials Inc. Homoepitaxial gallium-nitride-based electronic devices and method for producing same
TW589396B (en) * 2003-01-07 2004-06-01 Arima Optoelectronics Corp Chemical vapor deposition reactor
KR100568299B1 (ko) * 2004-03-31 2006-04-05 삼성전기주식회사 질화갈륨계 반도체 발광소자
JP2006073578A (ja) * 2004-08-31 2006-03-16 Nokodai Tlo Kk ＡｌＧａＮの気相成長方法及び気相成長装置
JP2006080374A (ja) * 2004-09-10 2006-03-23 Sharp Corp 窒化物半導体の製造装置および窒化物半導体レーザ素子
JP2006202845A (ja) * 2005-01-18 2006-08-03 Sony Corp 半導体発光装置
GB2423307A (en) * 2005-02-22 2006-08-23 Univ Durham Apparatus and process for crystal growth
KR100631972B1 (ko) * 2005-02-28 2006-10-11 삼성전기주식회사 화학기상증착 공정을 이용한 초격자 반도체 구조를 제조하는 방법
WO2006097804A2 (en) 2005-02-28 2006-09-21 Epispeed S.A. System and process for high-density,low-energy plasma enhanced vapor phase epitaxy
CN100337909C (zh) * 2005-03-16 2007-09-19 清华大学 一种碳纳米管阵列的生长方法
US20080257716A1 (en) * 2005-03-18 2008-10-23 Hiroshi Nagata Coating Method and Apparatus, a Permanent Magnet, and Manufacturing Method Thereof
CN100376477C (zh) 2005-03-18 2008-03-26 清华大学 一种碳纳米管阵列生长装置及多壁碳纳米管阵列的生长方法
US7459718B2 (en) * 2005-03-23 2008-12-02 Nichia Corporation Field effect transistor
CN100344532C (zh) * 2005-03-25 2007-10-24 清华大学 一种碳纳米管阵列的生长装置
CN100337910C (zh) * 2005-03-31 2007-09-19 清华大学 一种碳纳米管阵列的生长方法
US7405430B2 (en) * 2005-06-10 2008-07-29 Cree, Inc. Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates
EP1930485A4 (en) * 2005-08-25 2010-06-09 Sumitomo Electric Industries METHOD FOR PRODUCING GAXIN 1 -XN (0 X 1) CRYSTAL, GAXIN 1 -XN (0 X 1) CRYSTAL SUBSTRATE, METHOD FOR PRODUCING GAN CRYSTAL, GAN CRYSTAL SUBSTRATE AND PRODUCT
WO2007040295A1 (en) * 2005-10-04 2007-04-12 Seoul Opto Device Co., Ltd. (al, ga, in)n-based compound semiconductor and method of fabricating the same
JP4720441B2 (ja) * 2005-11-02 2011-07-13 日立電線株式会社 青色発光ダイオード用ＧａＮ基板
KR100661602B1 (ko) * 2005-12-09 2006-12-26 삼성전기주식회사 수직 구조 질화갈륨계 ｌｅｄ 소자의 제조방법
JP4386031B2 (ja) * 2005-12-26 2009-12-16 住友電気工業株式会社 半導体デバイスの製造方法および窒化ガリウム結晶基板の識別方法
JP2007197302A (ja) 2005-12-28 2007-08-09 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の製造方法および製造装置
JP2007214378A (ja) * 2006-02-09 2007-08-23 Rohm Co Ltd 窒化物系半導体素子
JP4862442B2 (ja) * 2006-03-15 2012-01-25 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板の製造方法及びｉｉｉ−ｖ族窒化物系デバイスの製造方法
US7727333B1 (en) 2006-03-27 2010-06-01 Technologies And Devices International, Inc. HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby
US11661673B1 (en) * 2006-03-27 2023-05-30 Ostendo Technologies, Inc. HVPE apparatus and methods for growing indium nitride and indium nitride materials and structures grown thereby
US8728234B2 (en) * 2008-06-04 2014-05-20 Sixpoint Materials, Inc. Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth
US8357243B2 (en) 2008-06-12 2013-01-22 Sixpoint Materials, Inc. Method for testing group III-nitride wafers and group III-nitride wafers with test data
DE102006017621B4 (de) * 2006-04-12 2008-12-24 Schott Ag Vorrichtung und Verfahren zur Herstellung von multikristallinem Silizium
US7364991B2 (en) * 2006-04-27 2008-04-29 Applied Materials, Inc. Buffer-layer treatment of MOCVD-grown nitride structures
KR100809243B1 (ko) * 2006-04-27 2008-02-29 삼성전기주식회사 질화물막 제조방법 및 질화물 구조
US7585769B2 (en) * 2006-05-05 2009-09-08 Applied Materials, Inc. Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE
JP5025168B2 (ja) * 2006-06-08 2012-09-12 昭和電工株式会社 Ｉｉｉ族窒化物半導体積層構造体の製造方法
US20080018004A1 (en) 2006-06-09 2008-01-24 Air Products And Chemicals, Inc. High Flow GaCl3 Delivery
JP5003033B2 (ja) * 2006-06-30 2012-08-15 住友電気工業株式会社 ＧａＮ薄膜貼り合わせ基板およびその製造方法、ならびにＧａＮ系半導体デバイスおよびその製造方法
FR2904008B1 (fr) * 2006-07-18 2009-12-04 Centre Nat Rech Scient NOUVEAU PROCEDE POUR LA CROISSANCE DE NITRURES D'ELEMENTS DU GROUPE IIIb.
US7947577B2 (en) * 2006-09-08 2011-05-24 Tokuyama Corporation Method and apparatus for producing group III nitride
US8647435B1 (en) 2006-10-11 2014-02-11 Ostendo Technologies, Inc. HVPE apparatus and methods for growth of p-type single crystal group III nitride materials
US20080276860A1 (en) * 2007-05-10 2008-11-13 Burrows Brian H Cross flow apparatus and method for hydride vapor phase deposition
US20080289575A1 (en) * 2007-05-24 2008-11-27 Burrows Brian H Methods and apparatus for depositing a group iii-v film using a hydride vapor phase epitaxy process
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
EP2201613A1 (en) * 2007-08-31 2010-06-30 Lattice Power (Jiangxi) Corporation Method for fabricating a low-resistivity ohmic contact to a p-type iii-v nitride semiconductor material at low temperature
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
JP5241855B2 (ja) * 2008-02-25 2013-07-17 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物ウエハを製造する方法およびｉｉｉ族窒化物ウエハ
WO2009149300A1 (en) 2008-06-04 2009-12-10 Sixpoint Materials High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal
US8871024B2 (en) 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8097081B2 (en) * 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8303710B2 (en) 2008-06-18 2012-11-06 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
WO2011044554A1 (en) 2009-10-09 2011-04-14 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
US20100003492A1 (en) * 2008-07-07 2010-01-07 Soraa, Inc. High quality large area bulk non-polar or semipolar gallium based substrates and methods
US8673074B2 (en) * 2008-07-16 2014-03-18 Ostendo Technologies, Inc. Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
JP2011530194A (ja) 2008-08-04 2011-12-15 ソラア インコーポレーテッド 物質および蛍光体を含んだ非分極性あるいは半極性のガリウムを用いた白色灯デバイス
US8021481B2 (en) * 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US8323405B2 (en) 2008-08-07 2012-12-04 Soraa, Inc. Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer
US8979999B2 (en) 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8430958B2 (en) 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8148801B2 (en) 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
WO2010045567A1 (en) * 2008-10-16 2010-04-22 Sixpoint Materials, Inc. Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals
US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
US8852341B2 (en) * 2008-11-24 2014-10-07 Sixpoint Materials, Inc. Methods for producing GaN nutrient for ammonothermal growth
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
US8878230B2 (en) 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
US8461071B2 (en) 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8183132B2 (en) * 2009-04-10 2012-05-22 Applied Materials, Inc. Methods for fabricating group III nitride structures with a cluster tool
US8568529B2 (en) 2009-04-10 2013-10-29 Applied Materials, Inc. HVPE chamber hardware
WO2010124261A2 (en) * 2009-04-24 2010-10-28 Applied Materials, Inc. Substrate pretreatment for subsequent high temperature group iii depositions
US8110889B2 (en) * 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
TW201039381A (en) * 2009-04-29 2010-11-01 Applied Materials Inc Method of forming in-situ pre-GaN deposition layer in HVPE
WO2010129718A2 (en) * 2009-05-05 2010-11-11 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
US8306081B1 (en) 2009-05-27 2012-11-06 Soraa, Inc. High indium containing InGaN substrates for long wavelength optical devices
US8507304B2 (en) 2009-07-17 2013-08-13 Applied Materials, Inc. Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
US20110104843A1 (en) * 2009-07-31 2011-05-05 Applied Materials, Inc. Method of reducing degradation of multi quantum well (mqw) light emitting diodes
US8148241B2 (en) * 2009-07-31 2012-04-03 Applied Materials, Inc. Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
US8629065B2 (en) * 2009-11-06 2014-01-14 Ostendo Technologies, Inc. Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
US8465587B2 (en) * 2009-12-30 2013-06-18 Cbl Technologies, Inc. Modern hydride vapor-phase epitaxy system and methods
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
CN101901760B (zh) * 2010-06-24 2012-02-08 西安电子科技大学 基于c面SiC衬底上极性c面GaN的MOCVD生长方法
US8486192B2 (en) 2010-09-30 2013-07-16 Soitec Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods
US8133806B1 (en) 2010-09-30 2012-03-13 S.O.I.Tec Silicon On Insulator Technologies Systems and methods for forming semiconductor materials by atomic layer deposition
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
JP5343984B2 (ja) * 2011-01-17 2013-11-13 株式会社デンソー 化合物半導体基板およびその製造方法
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
TWI534291B (zh) 2011-03-18 2016-05-21 應用材料股份有限公司 噴淋頭組件
KR101160935B1 (ko) * 2011-06-07 2012-06-29 주식회사 티지솔라 배치식 증착 장치의 가스 분사 장치
RU2479892C2 (ru) * 2011-07-25 2013-04-20 Общество с ограниченной ответственностью "Галлий-Н" Способ изготовления полупроводниковых светоизлучающих элементов
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
US20130309848A1 (en) * 2012-05-16 2013-11-21 Alliance For Sustainable Energy, Llc High throughput semiconductor deposition system
US9023673B1 (en) 2012-06-15 2015-05-05 Ostendo Technologies, Inc. Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusions
US8992684B1 (en) 2012-06-15 2015-03-31 Ostendo Technologies, Inc. Epitaxy reactor internal component geometries for the growth of superior quality group III-nitride materials
US9577143B1 (en) 2012-06-15 2017-02-21 Ostendo Technologies, Inc. Backflow reactor liner for protection of growth surfaces and for balancing flow in the growth liner
JP5943345B2 (ja) * 2012-07-27 2016-07-05 東京エレクトロン株式会社 ＺｎＯ膜の製造装置及び製造方法
EP3010035B1 (en) * 2013-06-10 2022-12-21 Tokuyama Corporation Aluminium-based group iii nitride single crystal production method
US10190234B1 (en) 2017-10-30 2019-01-29 Wisconsin Alumni Research Foundation Continuous system for fabricating multilayer heterostructures via hydride vapor phase epitaxy
US10903389B2 (en) * 2018-01-15 2021-01-26 Alliance For Sustainable Energy, Llc Hydride enhanced growth rates in hydride vapor phase epitaxy
US12325931B2 (en) 2019-06-13 2025-06-10 Alliance For Sustainable Energy, Llc Nitrogen-enabled high growth rates in hydride vapor phase epitaxy

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1218544A (en) 1967-04-01 1971-01-06 Mullard Ltd Temperature control systems
US3675619A (en) * 1969-02-25 1972-07-11 Monsanto Co Apparatus for production of epitaxial films
US3836408A (en) * 1970-12-21 1974-09-17 Hitachi Ltd Production of epitaxial films of semiconductor compound material
US3865655A (en) * 1973-09-24 1975-02-11 Rca Corp Method for diffusing impurities into nitride semiconductor crystals
CA1071068A (en) * 1975-03-19 1980-02-05 Guy-Michel Jacob Method of manufacturing single crystals by growth from the vapour phase
DE2738329A1 (de) * 1976-09-06 1978-03-09 Philips Nv Elektrolumineszierende galliumnitridhalbleiteranordnung und verfahren zu deren herstellung
US4116733A (en) * 1977-10-06 1978-09-26 Rca Corporation Vapor phase growth technique of III-V compounds utilizing a preheating step
JPS54112790A (en) 1978-02-24 1979-09-03 Fujitsu Ltd Source boat for vapor phase growth of compound semiconductor
US4190470A (en) * 1978-11-06 1980-02-26 M/A Com, Inc. Production of epitaxial layers by vapor deposition utilizing dynamically adjusted flow rates and gas phase concentrations
JPS56138917A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Vapor phase epitaxial growth
US4316430A (en) * 1980-09-30 1982-02-23 Rca Corporation Vapor phase deposition apparatus
JPS5771897A (en) 1980-10-21 1982-05-04 Toshiba Corp Prepration of epitaxial crystal in liquid phase and its device
JPS582294A (ja) * 1981-06-29 1983-01-07 Fujitsu Ltd 気相成長方法
JPS5825223A (ja) 1981-08-06 1983-02-15 Nec Corp ３−ｖ族化合物半導体の気相成長装置
JPS59229816A (ja) 1983-06-13 1984-12-24 Agency Of Ind Science & Technol 化合物半導体の気相成長装置
JPS6060714A (ja) 1983-09-14 1985-04-08 Nec Corp Ｉ−ｖ族化合物半導体の気相エピタキシャル成長方法
JPS6065798A (ja) 1983-09-19 1985-04-15 Toyota Central Res & Dev Lab Inc 窒化ガリウム単結晶の成長方法
JPS60250619A (ja) 1984-05-25 1985-12-11 Mitsubishi Electric Corp ＧａＡｓ層の気相成長方法
US4592307A (en) * 1985-02-28 1986-06-03 Rca Corporation Vapor phase deposition apparatus
JPS6291494A (ja) * 1985-10-16 1987-04-25 Res Dev Corp Of Japan 化合物半導体単結晶成長方法及び装置
JPS62132797A (ja) 1985-12-04 1987-06-16 Nec Corp ３−ｖ族化合物半導体のエピタキシヤル成長方法
JPS6345198A (ja) * 1986-04-23 1988-02-26 Sumitomo Electric Ind Ltd 多元系結晶の製造方法
US4951603A (en) * 1988-09-12 1990-08-28 Daidousanso Co., Ltd. Apparatus for producing semiconductors
EP0377940B1 (en) * 1989-01-13 1994-11-17 Kabushiki Kaisha Toshiba Compound semiconductor material and semiconductor element using the same and method of manufacturing the semiconductor element
JPH0818902B2 (ja) * 1989-11-02 1996-02-28 シャープ株式会社 気相成長装置
JPH0421780A (ja) * 1990-05-14 1992-01-24 Sharp Corp 気相成長装置
JPH04160100A (ja) * 1990-10-25 1992-06-03 Nikko Kyodo Co Ltd ３―５族化合物半導体のエピタキシャル成長方法
JP2593960B2 (ja) * 1990-11-29 1997-03-26 シャープ株式会社 化合物半導体発光素子とその製造方法
EP0498580A1 (en) * 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Method for depositing a metal film containing aluminium by use of alkylaluminium halide
DE69207695T2 (de) * 1991-10-01 1996-07-25 Philips Electronics Nv Verfahren zur Herstellung von Kalium-Lithium-Niobatkristallen
JP2917694B2 (ja) * 1992-04-02 1999-07-12 日本電気株式会社 化合物半導体気相成長方法及びその装置
US5254210A (en) * 1992-04-27 1993-10-19 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for growing semiconductor heterostructures
JPH06267848A (ja) * 1993-03-10 1994-09-22 Shin Etsu Handotai Co Ltd エピタキシャルウエーハ及びその製造方法
JPH0745538A (ja) 1993-07-29 1995-02-14 Hitachi Ltd 化合物半導体装置の製造方法及びその製造装置
DE69431333T2 (de) * 1993-10-08 2003-07-31 Mitsubishi Cable Industries, Ltd. GaN-Einkristall
US5587014A (en) * 1993-12-22 1996-12-24 Sumitomo Chemical Company, Limited Method for manufacturing group III-V compound semiconductor crystals
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6440823B1 (en) * 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
JPH0897159A (ja) * 1994-09-29 1996-04-12 Handotai Process Kenkyusho:Kk エピタキシャル成長方法および成長装置
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
JPH09107124A (ja) 1995-10-09 1997-04-22 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
US6056817A (en) * 1996-03-28 2000-05-02 Japan Energy Corporation Process for producing semi-insulating InP single crystal and semi-insulating InP single crystal substrate
JP3397968B2 (ja) * 1996-03-29 2003-04-21 信越半導体株式会社 半導体単結晶インゴットのスライス方法
JP3876473B2 (ja) * 1996-06-04 2007-01-31 住友電気工業株式会社 窒化物単結晶及びその製造方法
US5656552A (en) * 1996-06-24 1997-08-12 Hudak; John James Method of making a thin conformal high-yielding multi-chip module
JPH1052816A (ja) * 1996-08-13 1998-02-24 M Ii M C Kk ワイヤ式切断方法
US6020602A (en) * 1996-09-10 2000-02-01 Kabushiki Kaisha Toshba GaN based optoelectronic device and method for manufacturing the same
US6533874B1 (en) * 1996-12-03 2003-03-18 Advanced Technology Materials, Inc. GaN-based devices using thick (Ga, Al, In)N base layers
US6177292B1 (en) * 1996-12-05 2001-01-23 Lg Electronics Inc. Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate
JP3721674B2 (ja) 1996-12-05 2005-11-30 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体基板の製造方法
US6139629A (en) * 1997-04-03 2000-10-31 The Regents Of The University Of California Group III-nitride thin films grown using MBE and bismuth
EP0942459B1 (en) * 1997-04-11 2012-03-21 Nichia Corporation Method of growing nitride semiconductors
TW427039B (en) * 1997-06-16 2001-03-21 Matsushita Electric Industrial Co Ltd Manufacturing method for semiconductor, manufacturing method for semiconductor device, manufacturing method for semiconductor substrate
US6146457A (en) * 1997-07-03 2000-11-14 Cbl Technologies, Inc. Thermal mismatch compensation to produce free standing substrates by epitaxial deposition
US5935321A (en) * 1997-08-01 1999-08-10 Motorola, Inc. Single crystal ingot and method for growing the same
TW385493B (en) * 1997-08-04 2000-03-21 Sumitomo Chemical Co Method for manufacturing group III-V compound semiconductor
JP3603598B2 (ja) 1997-08-04 2004-12-22 住友化学株式会社 ３−５族化合物半導体の製造方法
JP3109659B2 (ja) * 1997-09-05 2000-11-20 スタンレー電気株式会社 結晶成長方法および装置
US6337102B1 (en) * 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
US6890809B2 (en) * 1997-11-18 2005-05-10 Technologies And Deviles International, Inc. Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
US6218269B1 (en) * 1997-11-18 2001-04-17 Technology And Devices International, Inc. Process for producing III-V nitride pn junctions and p-i-n junctions
US6472300B2 (en) 1997-11-18 2002-10-29 Technologies And Devices International, Inc. Method for growing p-n homojunction-based structures utilizing HVPE techniques
KR100252049B1 (ko) * 1997-11-18 2000-04-15 윤종용 원자층 증착법에 의한 알루미늄층의 제조방법
US6555452B2 (en) 1997-11-18 2003-04-29 Technologies And Devices International, Inc. Method for growing p-type III-V compound material utilizing HVPE techniques
US6476420B2 (en) * 1997-11-18 2002-11-05 Technologies And Devices International, Inc. P-N homojunction-based structures utilizing HVPE growth III-V compound layers
JPH11209199A (ja) * 1998-01-26 1999-08-03 Sumitomo Electric Ind Ltd ＧａＮ単結晶の合成方法
TW393786B (en) * 1998-03-26 2000-06-11 Min Shr Method for manufacturing an epitaxial chip
US6086673A (en) 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates
WO1999066565A1 (en) * 1998-06-18 1999-12-23 University Of Florida Method and apparatus for producing group-iii nitrides
US6177688B1 (en) * 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
JP3171180B2 (ja) 1999-02-04 2001-05-28 日本電気株式会社 気相エピタキシャル成長法、半導体基板の製造方法、半導体基板及びハイドライド気相エピタキシー装置
US6179913B1 (en) * 1999-04-16 2001-01-30 Cbl Technologies, Inc. Compound gas injection system and methods
US6566256B1 (en) * 1999-04-16 2003-05-20 Gbl Technologies, Inc. Dual process semiconductor heterostructures and methods
US6113985A (en) * 1999-04-27 2000-09-05 The United States Of America As Represented By Secretary Of The Air Force Process for the manufacture of group III nitride targets for use in sputtering and similar equipment
US6406540B1 (en) * 1999-04-27 2002-06-18 The United States Of America As Represented By The Secretary Of The Air Force Process and apparatus for the growth of nitride materials
US6290774B1 (en) * 1999-05-07 2001-09-18 Cbl Technology, Inc. Sequential hydride vapor phase epitaxy
JP3591710B2 (ja) * 1999-12-08 2004-11-24 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物層の成長方法およびそれを用いた基板の製造方法
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
US6706119B2 (en) * 2001-03-30 2004-03-16 Technologies And Devices International, Inc. Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE
US6613143B1 (en) * 2001-07-06 2003-09-02 Technologies And Devices International, Inc. Method for fabricating bulk GaN single crystals

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