JP5943345B2 - ZnO膜の製造装置及び製造方法 - Google Patents
ZnO膜の製造装置及び製造方法 Download PDFInfo
- Publication number
- JP5943345B2 JP5943345B2 JP2012167481A JP2012167481A JP5943345B2 JP 5943345 B2 JP5943345 B2 JP 5943345B2 JP 2012167481 A JP2012167481 A JP 2012167481A JP 2012167481 A JP2012167481 A JP 2012167481A JP 5943345 B2 JP5943345 B2 JP 5943345B2
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- gas
- zno film
- substrate
- storage unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C19/00—Apparatus specially adapted for applying particulate materials to surfaces
- B05C19/06—Storage, supply or control of the application of particulate material; Recovery of excess particulate material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- Electrochemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
200℃≦T1≦420℃
300℃≦T2≦600℃
600℃≦T3≦1000℃
Zn(s)+Cl2(g)→ZnCl2(g)…(1)
Zn(s)→Zn(g)…(2)
ZnCl2(g)+0.5O2(g)→ZnO(s)+Cl2(g)…(3)
Zn(g)+0.5O2(g)→ZnO(s)…(4)
P(Cl2)+P(ZnCl2)+P(Zn)+P(O2)+P(N2)=1…(5)
P0(ZnCl2)−P(ZnCl2)−P(Zn)=2P0(O2)−2P0(O2)…(6)
P0(ZnCl2)=P(ZnCl2)+P(Cl2)…(7)
位置X3は、基板2の重心位置、位置X4は、重心位置X3に対して、位置X2とは逆側の位置である。
・反応容器内圧力=1(atm)
・基板2:ZnO基板
・共通ガスA12:Cl2+N2
・第3ガスA3:O2+N2
・温度T1=380℃
・温度T2=400℃
・温度T3=1000℃
・ZnCl2分圧=2.2E−4(atm)
・Zn分圧=8E−6(atm)
・O2分圧=5.1E−2(atm)
・N2分圧=9.5E−1(atm)
・成長時間=60分
・VI/II=447
・反応容器内圧力=1(atm)
・基板2:ZnO基板
・共通ガスA12:Cl2+N2
・第3ガスA3:O2+N2
・温度T1=380℃
・温度T2=400℃
・温度T3=1000℃
・ZnCl2分圧=2.2E−4(atm)
・Zn分圧=8E−6(atm)
・O2分圧=1.3E−1(atm)
・N2分圧=8.7E−1(atm)
・成長時間=60分
・VI/II=1140
(A);FWHM=20(arcsec)
(B);FWHM=13(arcsec)
・反応容器内圧力=1(atm)
・基板2:ZnO基板
・共通ガスA12:Cl2+N2
・第3ガスA3:O2+N2
・温度T1=380℃
・温度T2=400℃
・温度T3=1000℃
・ZnCl2分圧=2.2E−4(atm)
・Zn分圧=8E−6(atm)
・O2分圧=1.3E−1(atm)
・N2分圧=8.7E−1(atm)
・成長時間=360分
・VI/II=1140
(A);FWHM=18(arcsec)
(B);FWHM=13(arcsec)
・反応容器内圧力=1(atm)
・基板2:ZnO基板
・共通ガスA12:Cl2+N2
・第3ガスA3:O2+N2
・温度T1=380℃
・温度T2=400℃
・温度T3=1000℃
・ZnCl2分圧=2.2E−4(atm)
・Zn分圧=8E−6(atm)
・O2分圧=1.3E−1(atm)
・N2分圧=8.7E−1(atm)
・成長時間=540分
・VI/II=1140
(A);FWHM=46(arcsec)
(B);FWHM=30(arcsec)
・反応容器内圧力=1(atm)
・基板2:ZnO基板
・共通ガスA12:Cl2+N2
・第3ガスA3:O2+N2
・温度T1=380℃
・温度T2=400℃
・温度T3=1000℃
・ZnCl2分圧=0(atm)
・Zn分圧=8E−6(atm)
・O2分圧=1.3E−1(atm)
・N2分圧=8.7E−1(atm)
・成長時間=60分
・反応容器内圧力=1(atm)
・基板2:ZnO基板
・共通ガスA12:Cl2+N2
・第3ガスA3:O2+N2
・温度T1=380℃
・温度T2=400℃
・温度T3=1000℃
・ZnCl2分圧=8.8E−5(atm)
・Zn分圧=8E−6(atm)
・O2分圧=6.6E−2(atm)
・N2分圧=9.3E−1(atm)
・成長時間=60分
・反応容器内圧力=1(atm)
・基板2:ZnO基板
・共通ガスA12:Cl2+N2
・第3ガスA3:O2+N2
・温度T1=380℃
・温度T2=400℃
・温度T3=1000℃
・ZnCl2分圧=2.2E−4(atm)
・Zn分圧=8E−6(atm)
・O2分圧=1.3E−1(atm)
・N2分圧=8.7E−1(atm)
・成長時間=60分
・反応容器内圧力=1(atm)
・基板2:ZnO基板
・共通ガスA12:Cl2+N2
・第3ガスA3:O2+N2
・温度T1=380℃
・温度T2=400℃
・温度T3=1000℃
・ZnCl2分圧=3.3E−4(atm)
・Zn分圧=8E−6(atm)
・O2分圧=2E−1(atm)
・N2分圧=8E−1(atm)
・成長時間=60分
・反応容器内圧力=1(atm)
・基板2:ZnO基板
・共通ガスA12:Cl2+N2
・第3ガスA3:O2+N2
・温度T1=380℃
・温度T2=400℃
・温度T3=1000℃
・ZnCl2分圧=4.4E−4(atm)
・Zn分圧=8E−6(atm)
・O2分圧=2.6E−1(atm)
・N2分圧=7.4E−1(atm)
・成長時間=60分
Claims (7)
- ZnO膜が形成されるべき基板が配置される設置台と、
前記設置台を収容する反応容器と、
前記反応容器内部に連通し、Znを含有する固体原料を収容する第1原料収容部と、
前記反応容器内部に連通し、Znを含有する固体原料を収容する第2原料収容部と、
前記設置台、前記第1原料収容部、及び前記第2原料収容部を加熱する加熱手段と、
少なくとも前記第1原料収容部に塩素ガスを供給する塩素ガス供給源と、
前記反応容器内に酸素ガスを供給する酸素ガス供給源と、
制御装置と、
を備え、
前記制御装置は、
前記第1原料収容部の温度T1、前記第2原料収容部の温度T2、前記基板の配置された前記設置台の温度T3が、前記ZnO膜の成膜時において、T1<T2<T3の関係を満たすように、前記加熱手段を制御し、
200℃≦T1≦420℃、
300℃≦T2≦600℃、
600℃≦T3≦1000℃、
であり、
前記制御装置は、
前記塩素ガス供給源から前記第1原料収容部に供給される塩素ガスの流量を制御し、
塩化亜鉛ガスの分圧を、前記基板表面の直上の近傍領域において、8.8×10−5気圧以上3.6×10−4気圧以下に設定し、且つ、
前記酸素ガス供給源から前記反応容器内に供給される酸素ガスの流量を制御する、
ことを特徴とするZnO膜の製造装置。 - 前記第2原料収容部にキャリアガスを供給するキャリアガス供給源を更に備え、前記第1原料収容部と、前記第2原料収容部とは、これらから出射されるガスの流量を互いに独立して制御することができ、且つ、前記第1原料収容部からのガスの出射方向と、前記第2原料収容部からのガスの出射方向が異なるよう、離間して配置されている、ことを特徴とする請求項1に記載のZnO膜の製造装置。
- 前記第1原料収容部と、前記第2原料収容部とは、前記第1原料収容部を通ったガスが、前記第2原料収容部内を通るように連続している、ことを特徴とする請求項1に記載のZnO膜の製造装置。
- 前記制御装置は、前記塩素ガス供給源から供給される塩素ガスの量を制御し、塩化亜鉛ガスの分圧を、前記基板表面の直上の近傍領域において、8.8×10−5気圧以上3.3×10−4気圧以下に設定する、ことを特徴とする請求項1乃至請求項3のいずれか1項に記載のZnO膜の製造装置。
- 前記制御装置は、前記塩素ガス供給源から供給される塩素ガスの量を制御し、塩化亜鉛ガスの分圧を、前記基板表面の直上の近傍領域において、8.8×10−5気圧以上2.2×10−4気圧以下に設定する、ことを特徴とする請求項1乃至請求項3のいずれか1項に記載のZnO膜の製造装置。
- 前記第1原料収容部と、前記第2原料収容部とは、前記第1原料収容部を通ったガスが、前記第2原料収容部内を通るように連続しており、且つ、前記第1及び2原料収容部の底面は、この底面よりも上方に位置する水平面からの深さが、前記第2原料収容部のガス出射口に向かうにしたがって深くなるように、傾斜していることを特徴とする請求項1又は請求項3に記載のZnO膜の製造装置。
- 請求項1乃至6のいずれか1項に記載のZnO膜の製造装置を用いたZnO膜の製造方法において、
前記設置台に前記基板を配置する設置工程と、
前記制御装置によって、前記塩素ガス供給源から前記第1原料収容部に塩素ガスを供給し、且つ、前記酸素ガス供給源から前記反応容器内に酸素ガスを供給しつつ、前記第1原料収容部の温度T1、前記第2原料収容部の温度T2、前記基板の配置された前記設置台の温度T3が、T1<T2<T3の関係を満たすように、前記加熱手段を制御する成膜工程と、を備えることを特徴とするZnO膜の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012167481A JP5943345B2 (ja) | 2012-07-27 | 2012-07-27 | ZnO膜の製造装置及び製造方法 |
PCT/JP2013/066863 WO2014017229A1 (ja) | 2012-07-27 | 2013-06-19 | ZnO膜の製造装置及び製造方法 |
US14/417,196 US9611545B2 (en) | 2012-07-27 | 2013-06-19 | ZnO film production system and production method using ZnO film production system having heating units and control device |
KR1020157001841A KR20150036173A (ko) | 2012-07-27 | 2013-06-19 | ZnO막의 제조 장치 및 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012167481A JP5943345B2 (ja) | 2012-07-27 | 2012-07-27 | ZnO膜の製造装置及び製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014025123A JP2014025123A (ja) | 2014-02-06 |
JP5943345B2 true JP5943345B2 (ja) | 2016-07-05 |
Family
ID=49997046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012167481A Expired - Fee Related JP5943345B2 (ja) | 2012-07-27 | 2012-07-27 | ZnO膜の製造装置及び製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9611545B2 (ja) |
JP (1) | JP5943345B2 (ja) |
KR (1) | KR20150036173A (ja) |
WO (1) | WO2014017229A1 (ja) |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2320774A1 (fr) * | 1974-01-10 | 1977-03-11 | Radiotechnique Compelec | Procede et dispositif de depot de materiau dope |
JP2587623B2 (ja) * | 1986-11-22 | 1997-03-05 | 新技術事業団 | 化合物半導体のエピタキシヤル結晶成長方法 |
JPH03218621A (ja) * | 1989-11-30 | 1991-09-26 | Toshiba Corp | 薄膜の選択成長方法及び薄膜の選択成長装置 |
US5225366A (en) * | 1990-06-22 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for and a method of growing thin films of elemental semiconductors |
US5750188A (en) * | 1996-08-29 | 1998-05-12 | Motorola, Inc. | Method for forming a thin film of a non-stoichiometric metal oxide |
US6555452B2 (en) * | 1997-11-18 | 2003-04-29 | Technologies And Devices International, Inc. | Method for growing p-type III-V compound material utilizing HVPE techniques |
JP2001270799A (ja) | 2000-03-27 | 2001-10-02 | Toyo Ink Mfg Co Ltd | 酸化亜鉛薄膜およびその製造方法 |
AU2002252566A1 (en) * | 2001-03-30 | 2002-10-15 | Technologies And Devices International Inc. | Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques |
US6936357B2 (en) * | 2001-07-06 | 2005-08-30 | Technologies And Devices International, Inc. | Bulk GaN and ALGaN single crystals |
US6613143B1 (en) * | 2001-07-06 | 2003-09-02 | Technologies And Devices International, Inc. | Method for fabricating bulk GaN single crystals |
US7501023B2 (en) * | 2001-07-06 | 2009-03-10 | Technologies And Devices, International, Inc. | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
US6846516B2 (en) * | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
JP4158139B2 (ja) * | 2002-04-30 | 2008-10-01 | スズキ株式会社 | 薄膜の製造方法およびその装置 |
US20040142558A1 (en) * | 2002-12-05 | 2004-07-22 | Granneman Ernst H. A. | Apparatus and method for atomic layer deposition on substrates |
US8647435B1 (en) * | 2006-10-11 | 2014-02-11 | Ostendo Technologies, Inc. | HVPE apparatus and methods for growth of p-type single crystal group III nitride materials |
US8129208B2 (en) * | 2007-02-07 | 2012-03-06 | Tokuyama Corporation | n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof |
JP5052174B2 (ja) * | 2007-03-26 | 2012-10-17 | 国立大学法人東京農工大学 | 酸化亜鉛系半導体の製造方法及び酸化亜鉛系半導体の製造装置 |
JP4537434B2 (ja) * | 2007-08-31 | 2010-09-01 | 株式会社日立製作所 | 酸化亜鉛薄膜、及びそれを用いた透明導電膜、及び表示素子 |
WO2009142309A1 (en) * | 2008-05-23 | 2009-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8822263B2 (en) * | 2008-06-30 | 2014-09-02 | National University Corporation Tokyo University Of Agriculture And Technology | Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device |
JP5750767B2 (ja) * | 2009-10-09 | 2015-07-22 | 国立大学法人東北大学 | 薄膜とその形成方法、及びその薄膜を備えた半導体発光素子 |
US20120064665A1 (en) * | 2010-09-13 | 2012-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Deposition apparatus, apparatus for successive deposition, and method for manufacturing semiconductor device |
CN103299430A (zh) * | 2010-12-30 | 2013-09-11 | 周星工程股份有限公司 | 薄膜晶体管及其制造方法 |
KR101357595B1 (ko) * | 2011-11-17 | 2014-02-05 | (주)디엔에프 | 알킬 징크 할라이드 산화아연 전구체 및 이를 이용한 산화아연계 박막 증착방법 |
JP6056854B2 (ja) * | 2012-05-14 | 2017-01-11 | コニカミノルタ株式会社 | ガスバリア性フィルム、ガスバリア性フィルムの製造方法及び電子デバイス |
TW201415654A (zh) * | 2012-10-05 | 2014-04-16 | Inst Nuclear Energy Res Atomic Energy Council | 薄膜太陽能電池吸收層之製造方法 |
KR20140046617A (ko) * | 2012-10-09 | 2014-04-21 | 삼성코닝정밀소재 주식회사 | 산화아연 전구체 및 이를 이용한 산화아연계 박막 증착방법 |
WO2014200001A1 (ja) * | 2013-06-10 | 2014-12-18 | 株式会社トクヤマ | アルミニウム系iii族窒化物単結晶の製造方法 |
US20150225845A1 (en) * | 2014-02-12 | 2015-08-13 | Electronics And Telecommunications Research Institute | Method for forming metal oxide thin film and device for printing metal oxide thin film |
-
2012
- 2012-07-27 JP JP2012167481A patent/JP5943345B2/ja not_active Expired - Fee Related
-
2013
- 2013-06-19 KR KR1020157001841A patent/KR20150036173A/ko not_active Application Discontinuation
- 2013-06-19 WO PCT/JP2013/066863 patent/WO2014017229A1/ja active Application Filing
- 2013-06-19 US US14/417,196 patent/US9611545B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20150225846A1 (en) | 2015-08-13 |
JP2014025123A (ja) | 2014-02-06 |
KR20150036173A (ko) | 2015-04-07 |
WO2014017229A1 (ja) | 2014-01-30 |
US9611545B2 (en) | 2017-04-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6311834B2 (ja) | 窒化物半導体基板の製造方法 | |
JP5186733B2 (ja) | AlN結晶の成長方法 | |
US7279040B1 (en) | Method and apparatus for zinc oxide single crystal boule growth | |
JP5787324B2 (ja) | 三塩化ガリウムガスの製造方法及び窒化物半導体結晶の製造方法 | |
WO2015037232A1 (ja) | 窒化物半導体結晶、製造方法および製造装置 | |
JP5197283B2 (ja) | 窒化アルミニウム単結晶基板、積層体、およびこれらの製造方法 | |
WO2012042961A1 (ja) | GaN結晶の成長方法およびGaN結晶基板 | |
JP4199921B2 (ja) | 炭化珪素単結晶を製造する方法および装置 | |
US20210399095A1 (en) | Sic semiconductor substrate, and, production method therefor and production device therefor | |
JP2017165639A (ja) | 大面積の単結晶単原子層のhBNの製造装置及びこれを用いる製造方法 | |
Guo et al. | Zinc oxide nanostructures: epitaxially growing from hexagonal zinc nanostructures | |
JP5943345B2 (ja) | ZnO膜の製造装置及び製造方法 | |
Yamaguchi et al. | Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy | |
JP2007145679A (ja) | 窒化アルミニウム単結晶の製造装置及びその製造方法 | |
Torrison et al. | Morphological and optical properties of Si nanostructures imbedded in SiO 2 and Si 3 N 4 films grown by single source chemical vapor deposition | |
JP2007137714A (ja) | 単結晶の製造方法及び単結晶の製造装置 | |
JP6499917B2 (ja) | Iii族窒化物単結晶の製造方法 | |
JP2020189779A (ja) | 炭化珪素の製造方法 | |
JP3970789B2 (ja) | 窒化物単結晶の製造方法およびその製造装置 | |
Lee et al. | Synthesis and characterization of single-crystal Cu (In, Ga) Se 2 nanowires: high Ga contents and growth behaviour | |
US20160284545A1 (en) | System and method for producing polycrystalline group iii nitride articles and use thereof in production of single crystal group iii nitride articles | |
CN110578170B (zh) | ScAlMgO4单晶及器件 | |
JP2012059784A (ja) | 半導体薄膜製造装置及び窒化物半導体の製造方法 | |
JP2024500584A (ja) | 高品質なヘテロエピタキシャル単斜晶ガリウム酸化物結晶の成長方法 | |
JP2023026011A (ja) | 炭化タンタル被覆炭素材料 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150218 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20150218 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151117 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151202 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160126 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160323 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160426 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160517 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5943345 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |