GB1218544A - Temperature control systems - Google Patents
Temperature control systemsInfo
- Publication number
- GB1218544A GB1218544A GB1502167A GB1502167A GB1218544A GB 1218544 A GB1218544 A GB 1218544A GB 1502167 A GB1502167 A GB 1502167A GB 1502167 A GB1502167 A GB 1502167A GB 1218544 A GB1218544 A GB 1218544A
- Authority
- GB
- United Kingdom
- Prior art keywords
- produced
- gaas
- maintained
- temperature control
- control systems
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
- F27B9/30—Details, accessories, or equipment peculiar to furnaces of these types
- F27B9/40—Arrangements of controlling or monitoring devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
- F27B9/06—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated
- F27B9/062—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated electrically heated
- F27B9/063—Resistor heating, e.g. with resistors also emitting IR rays
Abstract
1,218,544. Gallium arsenide. MULLARD Ltd. 22 March, 1968 [1 April, 1967], No. 15021/67. Heading C1A. [Also in Divisions B1 and G3] A single crystal of GaAs is produced by passage of a liquid GaAs-containing boat 15, within a scaled tube 14 itself within a conveying tube 3, through a decreasing temperature gradient in a furnace 1 in which point 13 is maintained at the crystallization temperature, crystallization taking place in an atmosphere of As produced by vaporization from a body 16 maintained at a constant temperature (610‹ C.) by means of a variable heating furnace 2. Furnaces 1 and 2 may be thermally isolated. The GaAs is produced by reaction of As vapour with an initial Ga charge.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1502167A GB1218544A (en) | 1967-04-01 | 1967-04-01 | Temperature control systems |
FR1564130D FR1564130A (en) | 1967-04-01 | 1968-03-29 | |
SE422768A SE327243B (en) | 1967-04-01 | 1968-03-29 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1502167A GB1218544A (en) | 1967-04-01 | 1967-04-01 | Temperature control systems |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1218544A true GB1218544A (en) | 1971-01-06 |
Family
ID=10051667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1502167A Expired GB1218544A (en) | 1967-04-01 | 1967-04-01 | Temperature control systems |
Country Status (3)
Country | Link |
---|---|
FR (1) | FR1564130A (en) |
GB (1) | GB1218544A (en) |
SE (1) | SE327243B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7279047B2 (en) * | 2001-07-06 | 2007-10-09 | Technologies And Devices, International, Inc. | Reactor for extended duration growth of gallium containing single crystals |
US7501023B2 (en) | 2001-07-06 | 2009-03-10 | Technologies And Devices, International, Inc. | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
US7670435B2 (en) | 2001-03-30 | 2010-03-02 | Technologies And Devices International, Inc. | Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0176575A1 (en) * | 1984-04-10 | 1986-04-09 | Unisearch Limited | Analytical furnace having preheating and constant temperature sections |
-
1967
- 1967-04-01 GB GB1502167A patent/GB1218544A/en not_active Expired
-
1968
- 1968-03-29 SE SE422768A patent/SE327243B/xx unknown
- 1968-03-29 FR FR1564130D patent/FR1564130A/fr not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7670435B2 (en) | 2001-03-30 | 2010-03-02 | Technologies And Devices International, Inc. | Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE |
US7279047B2 (en) * | 2001-07-06 | 2007-10-09 | Technologies And Devices, International, Inc. | Reactor for extended duration growth of gallium containing single crystals |
US7501023B2 (en) | 2001-07-06 | 2009-03-10 | Technologies And Devices, International, Inc. | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
US7611586B2 (en) * | 2001-07-06 | 2009-11-03 | Technologies And Devices International, Inc. | Reactor for extended duration growth of gallium containing single crystals |
Also Published As
Publication number | Publication date |
---|---|
FR1564130A (en) | 1969-04-18 |
SE327243B (en) | 1970-08-17 |
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