JP2010507924A5 - - Google Patents

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Publication number
JP2010507924A5
JP2010507924A5 JP2009534736A JP2009534736A JP2010507924A5 JP 2010507924 A5 JP2010507924 A5 JP 2010507924A5 JP 2009534736 A JP2009534736 A JP 2009534736A JP 2009534736 A JP2009534736 A JP 2009534736A JP 2010507924 A5 JP2010507924 A5 JP 2010507924A5
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JP
Japan
Prior art keywords
temperature
susceptor
group iii
processing unit
semiconductor processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009534736A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010507924A (ja
Filing date
Publication date
Priority claimed from US11/552,474 external-priority patent/US20080092819A1/en
Application filed filed Critical
Publication of JP2010507924A publication Critical patent/JP2010507924A/ja
Publication of JP2010507924A5 publication Critical patent/JP2010507924A5/ja
Pending legal-status Critical Current

Links

JP2009534736A 2006-10-24 2007-09-21 温度変化の急速な基板保持構造 Pending JP2010507924A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/552,474 US20080092819A1 (en) 2006-10-24 2006-10-24 Substrate support structure with rapid temperature change
PCT/US2007/079132 WO2008051670A2 (en) 2006-10-24 2007-09-21 Substrate support structure with rapid temperature change

Publications (2)

Publication Number Publication Date
JP2010507924A JP2010507924A (ja) 2010-03-11
JP2010507924A5 true JP2010507924A5 (enExample) 2010-11-11

Family

ID=39316712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009534736A Pending JP2010507924A (ja) 2006-10-24 2007-09-21 温度変化の急速な基板保持構造

Country Status (7)

Country Link
US (1) US20080092819A1 (enExample)
EP (1) EP2099951A2 (enExample)
JP (1) JP2010507924A (enExample)
KR (2) KR20120046733A (enExample)
CN (1) CN101321891A (enExample)
TW (1) TW200830592A (enExample)
WO (1) WO2008051670A2 (enExample)

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US9076827B2 (en) 2010-09-14 2015-07-07 Applied Materials, Inc. Transfer chamber metrology for improved device yield
US20120118225A1 (en) * 2010-09-16 2012-05-17 Applied Materials, Inc. Epitaxial growth temperature control in led manufacture
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CN103074611A (zh) * 2012-12-20 2013-05-01 光达光电设备科技（嘉兴）有限公司 衬底承载装置及金属有机化学气相沉积设备
US9847457B2 (en) * 2013-07-29 2017-12-19 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and LED module having the same
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