JP2008515175A5 - - Google Patents

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Publication number
JP2008515175A5
JP2008515175A5 JP2007532731A JP2007532731A JP2008515175A5 JP 2008515175 A5 JP2008515175 A5 JP 2008515175A5 JP 2007532731 A JP2007532731 A JP 2007532731A JP 2007532731 A JP2007532731 A JP 2007532731A JP 2008515175 A5 JP2008515175 A5 JP 2008515175A5
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JP
Japan
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growth chamber
torr
film
metal nitride
nitrogen
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JP2007532731A
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English (en)
Japanese (ja)
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JP4468990B2 (ja
JP2008515175A (ja
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Priority claimed from PCT/AU2005/001483 external-priority patent/WO2006034540A1/en
Publication of JP2008515175A publication Critical patent/JP2008515175A/ja
Publication of JP2008515175A5 publication Critical patent/JP2008515175A5/ja
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Publication of JP4468990B2 publication Critical patent/JP4468990B2/ja
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JP2007532731A 2004-09-27 2005-09-27 Ｉｉｉ族金属窒化膜を成長させるための方法および装置 Expired - Fee Related JP4468990B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US61391004P 2004-09-27 2004-09-27
AU2005903494A AU2005903494A0 (en) 2005-07-01 Heater apparatus
AU2005904919A AU2005904919A0 (en) 2005-09-07 Method and apparatus for growing a metal nitride film of improved quality using a remote plasma enhanced deposition (RPECVD) process
PCT/AU2005/001483 WO2006034540A1 (en) 2004-09-27 2005-09-27 Method and apparatus for growing a group (iii) metal nitride film and a group (iii) metal nitride film

Publications (3)

Publication Number Publication Date
JP2008515175A JP2008515175A (ja) 2008-05-08
JP2008515175A5 true JP2008515175A5 (enExample) 2008-10-09
JP4468990B2 JP4468990B2 (ja) 2010-05-26

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JP2007532731A Expired - Fee Related JP4468990B2 (ja) 2004-09-27 2005-09-27 Ｉｉｉ族金属窒化膜を成長させるための方法および装置

Country Status (7)

Country Link
US (1) US8298624B2 (enExample)
EP (2) EP2573206B1 (enExample)
JP (1) JP4468990B2 (enExample)
KR (1) KR101352150B1 (enExample)
BR (1) BRPI0516136A (enExample)
CA (1) CA2581626C (enExample)
WO (1) WO2006034540A1 (enExample)

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