JP6527482B2 - 半導体製造装置 - Google Patents
半導体製造装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
図1は、第1の実施形態に従ったMOCVD(Metal Organic Chemical Vapor Deposition)装置1(以下、単に装置1ともいう)の構成の一例を示す概略図である。装置1は、例えば、GaN、AlN、GaAlN、InN等の半導体膜の成膜を行うエピタキシャル装置でよい。装置1は、チャンバ10と、ステージ20と、ヒータ25と、第1供給部30と、第2供給部40と、マイクロ波導波管50と、フィルタ60と、駆動部70と、コントローラ80とを備えている。
c×√(1−λ2/4b2} (式1)
ここで、cは導波管50の外の空間におけるマイクロ波の伝送速度である。式1から、導波管50内におけるマイクロ波の伝送速度は、長辺bが大きいほど速いことがわかる。よって、式1からも、長辺bは、大きいことが好ましいと言える。例えば、マイクロ波の周波数が約2.45GHz帯である場合、長辺bを約6.12cmより大きくすることによって、マイクロ波は高速で導波管50内を伝播することができる。
図4は、第1の実施形態の変形例による複数の導波管50の配置の一例を示す上面図である。1つの導波管50f_1は、チャンバ10の上面の略中心または略重心に配置されている。また、他の複数の導波管50a_1〜50e_1は、チャンバ10の上面の略中心または略重心を中心とする同心円上に略等間隔で配置されている。本変形例では、例えば、5つの導波管50a_1〜50e_1が、チャンバ10の上面の略中心を中心とする同心円Cに略等間隔で略均等に配置されている。導波管50a_1〜50f_1の開口は、第2供給部40(ステージ20、基板W)へ向かっており、マイクロ波を下方へ向かって照射する。また、導波管50a_1〜50e_1は、それぞれの長径bが中心Oを中心として放射方向に延伸するように配置されている。本変形例のその他の構成は、第1の実施形態の対応する構成と同様でよい。
図5は、第2の実施形態に従ったMOCVD装置2(以下、単に装置2ともいう)の構成の一例を示す概略図である。第2の実施形態によれば、導波管50は、チャンバ10(ラジカル生成部15)の側壁に設けられている。第2の実施形態のその他の構成は、第1の実施形態の対応する構成と同様でよい。
図7は、第2の実施形態の変形例による複数の導波管50の配置の一例を示す断面図である。図7は、基板Wまたはステージ20の表面に対して略平行方向に切断した断面を示す。複数の導波管50a_3〜50e_3は、第2の実施形態と同様に、チャンバ10(ラジカル生成部15)の側壁に設けられているが、その個数は、5個である。本変形例のその他の構成は、第2の実施形態の対応する構成と同様でよい。
図8(A)および図8(B)は、第2供給部40のシャワーヘッドSHの構成例を示す断面図である。シャワーヘッドSHは、V族元素含有ガスのラジカルを基板Wに供給するために、基板Wに対向する底面に多数の孔HLを有する。孔HLは、ラジカルを基板Wに略均等に供給するために、シャワーヘッドSHの底面に略均等に設けられている。また、後述するように、孔HLの深さを適切に調節することによって、V族元素含有ガスが孔HLを通過する際に効率良くラジカル化あるいはイオン化することができる。
Claims (5)
- 反応室内に収容された基板へ向かって延伸し、ガリウム、アルミニウムまたはインジウムの有機化合物ガスを前記基板上に付着させる第1供給部と、
前記第1供給部の上に設けられ、前記基板上に窒素ガスを供給する第2供給部と、
前記第1供給部の上に設けられ、マイクロ波を導波し、該マイクロ波の進行方向に対して略垂直方向の断面において長方形を有する中空の金属管であり、前記窒素ガスに該マイクロ波を照射して、該窒素ガスを窒素イオンおよび窒素ラジカルにプラズマ分解する導波部と、
前記第1供給部と前記第2供給部および前記導波部との間に設けられ、前記窒素イオンを通過させず、前記窒素ラジカルを通過させるフィルタとを備え、
前記窒素ラジカルを前記基板上に付着したガリウム、アルミニウムまたはインジウムの有機化合物と結合させて、GaN、AlN、InN、AlGaN、InGaNのいずれかをエピタキシャル成長させる、半導体製造装置。 - 前記フィルタは、前記第1供給部と分離しており、かつ、端部において前記反応室の側面に接続されている、請求項1に記載の半導体製造装置。
- 前記導波部は、約2.45GHz帯のマイクロ波、または、約5.8GHz帯のマイクロ波を前記窒素ガスに照射する、請求項1または請求項2に記載の半導体製造装置。
- 前記長方形の長辺は、前記マイクロ波の波長の約1/2より大きい、請求項3に記載の半導体製造装置。
- 前記マイクロ波の周波数が約2.45GHz帯である場合、前記長方形の長辺は6.12cmより大きく、
前記マイクロ波の周波数が約5.8GHz帯である場合、前記長方形の長辺は2.585cmより大きい、請求項4に記載の半導体製造装置。
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JP2016050086A JP6527482B2 (ja) | 2016-03-14 | 2016-03-14 | 半導体製造装置 |
US15/414,725 US11031212B2 (en) | 2016-03-14 | 2017-01-25 | Semiconductor manufacturing apparatus |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10475930B2 (en) * | 2016-08-17 | 2019-11-12 | Samsung Electronics Co., Ltd. | Method of forming crystalline oxides on III-V materials |
JP7174950B2 (ja) * | 2018-12-11 | 2022-11-18 | 株式会社デンソー | 成膜方法 |
WO2020185693A1 (en) * | 2019-03-08 | 2020-09-17 | Dsgi Technologies, Inc. | System and method of low temperature thin film deposition and insitu annealing |
US11854770B2 (en) * | 2021-01-14 | 2023-12-26 | Applied Materials, Inc. | Plasma processing with independent temperature control |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004089046A1 (ja) * | 1991-11-05 | 2004-10-14 | Nobumasa Suzuki | 無端環状導波管を有するマイクロ波導入装置及び該装置を備えたプラズマ処理装置 |
US5387288A (en) * | 1993-05-14 | 1995-02-07 | Modular Process Technology Corp. | Apparatus for depositing diamond and refractory materials comprising rotating antenna |
EP0652308B1 (en) * | 1993-10-14 | 2002-03-27 | Neuralsystems Corporation | Method of and apparatus for forming single-crystalline thin film |
JPH0987851A (ja) * | 1995-09-21 | 1997-03-31 | Canon Inc | マイクロ波プラズマ処理装置及び処理方法 |
KR970071945A (ko) * | 1996-02-20 | 1997-11-07 | 가나이 쯔도무 | 플라즈마처리방법 및 장치 |
JP3164019B2 (ja) | 1997-05-21 | 2001-05-08 | 日本電気株式会社 | 酸化シリコン膜およびその形成方法と成膜装置 |
JP4214585B2 (ja) * | 1998-04-24 | 2009-01-28 | 富士ゼロックス株式会社 | 半導体デバイス、半導体デバイスの製造方法及び製造装置 |
US6182603B1 (en) * | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
JP2000114240A (ja) * | 1998-09-30 | 2000-04-21 | Hitachi Ltd | プラズマ処理装置及びプラズマ閉じ込め方法 |
JP2000232256A (ja) | 1999-02-09 | 2000-08-22 | Fuji Xerox Co Ltd | 半導体素子及び半導体素子の製造方法 |
US20010052323A1 (en) * | 1999-02-17 | 2001-12-20 | Ellie Yieh | Method and apparatus for forming material layers from atomic gasses |
JP3911902B2 (ja) * | 1999-04-16 | 2007-05-09 | 東京エレクトロン株式会社 | 処理装置及び金属部品の表面処理方法 |
JP4182648B2 (ja) | 2001-03-19 | 2008-11-19 | 富士ゼロックス株式会社 | 半導体紫外線受光素子およびその製造方法 |
JP2003188104A (ja) * | 2001-12-14 | 2003-07-04 | Fuji Xerox Co Ltd | 窒化物半導体の製造装置、窒化物半導体の製造方法、及びリモートプラズマ装置 |
JP4532897B2 (ja) * | 2003-12-26 | 2010-08-25 | 財団法人国際科学振興財団 | プラズマ処理装置、プラズマ処理方法及び製品の製造方法 |
JP2005317670A (ja) * | 2004-04-27 | 2005-11-10 | Japan Science & Technology Agency | (100)配向した立方晶炭化珪素結晶膜の作製方法 |
EP2573206B1 (en) * | 2004-09-27 | 2014-06-11 | Gallium Enterprises Pty Ltd | Method for growing a group (iii) metal nitride film |
US7314835B2 (en) | 2005-03-21 | 2008-01-01 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
US20090029564A1 (en) * | 2005-05-31 | 2009-01-29 | Tokyo Electron Limited | Plasma treatment apparatus and plasma treatment method |
JP2007042951A (ja) * | 2005-08-04 | 2007-02-15 | Tokyo Electron Ltd | プラズマ処理装置 |
JP4677918B2 (ja) * | 2006-02-09 | 2011-04-27 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
TWI429585B (zh) * | 2006-05-29 | 2014-03-11 | Ulvac Inc | Carbon nanotubes growth substrate, carbon nanotubes growth method, carbon nanotubes growth catalyst with particle size control method, and nano-carbon tube diameter control method |
KR20090094033A (ko) * | 2006-12-28 | 2009-09-02 | 도쿄엘렉트론가부시키가이샤 | 절연막의 형성 방법 및 반도체 장치의 제조 방법 |
CA2653581A1 (en) * | 2009-02-11 | 2010-08-11 | Kenneth Scott Alexander Butcher | Migration and plasma enhanced chemical vapour deposition |
US20110117728A1 (en) * | 2009-08-27 | 2011-05-19 | Applied Materials, Inc. | Method of decontamination of process chamber after in-situ chamber clean |
JPWO2012011480A1 (ja) * | 2010-07-21 | 2013-09-09 | 東京エレクトロン株式会社 | 層間絶縁層形成方法 |
US8866271B2 (en) * | 2010-10-07 | 2014-10-21 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method, substrate processing apparatus and semiconductor device |
JPWO2012137949A1 (ja) | 2011-04-08 | 2014-07-28 | 東京エレクトロン株式会社 | 窒化物半導体の製造方法、窒化物半導体、およびiii−v族窒化物の成膜方法 |
JP2013069603A (ja) * | 2011-09-26 | 2013-04-18 | Tokyo Electron Ltd | マイクロ波処理装置および被処理体の処理方法 |
US20130087093A1 (en) * | 2011-10-10 | 2013-04-11 | Applied Materials, Inc. | Apparatus and method for hvpe processing using a plasma |
US20140335288A1 (en) * | 2012-02-24 | 2014-11-13 | Tohoku University | Plasma processing device and plasma processing method |
JP2014175168A (ja) * | 2013-03-08 | 2014-09-22 | Tokyo Electron Ltd | プラズマ処理装置 |
JP6406811B2 (ja) * | 2013-11-20 | 2018-10-17 | 国立大学法人名古屋大学 | Iii 族窒化物半導体装置の製造装置および製造方法ならびに半導体ウエハの製造方法 |
JP6324810B2 (ja) * | 2014-05-23 | 2018-05-16 | 株式会社トクヤマ | 気相成長装置 |
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