JP2004517461A5 - - Google Patents

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JP2004517461A5
JP2004517461A5 JP2001557092A JP2001557092A JP2004517461A5 JP 2004517461 A5 JP2004517461 A5 JP 2004517461A5 JP 2001557092 A JP2001557092 A JP 2001557092A JP 2001557092 A JP2001557092 A JP 2001557092A JP 2004517461 A5 JP2004517461 A5 JP 2004517461A5
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layer
fet
barrier layer
nonconductive
transistor
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JP2001557092A
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JP5313424B2 (ja
JP2004517461A (ja
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JP2001557092A 2000-02-04 2001-02-01 トラッピング（ｔｒａｐｐｉｎｇ）を低減させたＩＩＩ族窒化物ベースの電界効果トランジスタ（ＦＥＴ）およびトランジスタの製造方法 Expired - Lifetime JP5313424B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US18043500P 2000-02-04 2000-02-04
US60/180,435 2000-02-04
US09/771,800 US6586781B2 (en) 2000-02-04 2001-01-29 Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
US09/771,800 2001-01-29
PCT/US2001/003433 WO2001057929A1 (en) 2000-02-04 2001-02-01 Group iii nitride based fets and hemts with reduced trapping and method for producing the same

Publications (3)

Publication Number Publication Date
JP2004517461A JP2004517461A (ja) 2004-06-10
JP2004517461A5 true JP2004517461A5 (enExample) 2005-01-27
JP5313424B2 JP5313424B2 (ja) 2013-10-09

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JP2001557092A Expired - Lifetime JP5313424B2 (ja) 2000-02-04 2001-02-01 トラッピング（ｔｒａｐｐｉｎｇ）を低減させたＩＩＩ族窒化物ベースの電界効果トランジスタ（ＦＥＴ）およびトランジスタの製造方法

Country Status (10)

Country Link
US (1) US6586781B2 (enExample)
EP (1) EP1261988B1 (enExample)
JP (1) JP5313424B2 (enExample)
KR (1) KR100710654B1 (enExample)
CN (1) CN1260827C (enExample)
AT (1) ATE525751T1 (enExample)
AU (1) AU2001233253A1 (enExample)
CA (1) CA2399547C (enExample)
MY (1) MY130244A (enExample)
WO (1) WO2001057929A1 (enExample)

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