JP5668085B2 - セグメント化ゲートを有するパワートランジスタ - Google Patents
セグメント化ゲートを有するパワートランジスタ Download PDFInfo
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- JP5668085B2 JP5668085B2 JP2013023573A JP2013023573A JP5668085B2 JP 5668085 B2 JP5668085 B2 JP 5668085B2 JP 2013023573 A JP2013023573 A JP 2013023573A JP 2013023573 A JP2013023573 A JP 2013023573A JP 5668085 B2 JP5668085 B2 JP 5668085B2
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- 230000004888 barrier function Effects 0.000 claims description 19
- 229910002601 GaN Inorganic materials 0.000 claims description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 16
- 230000015556 catabolic process Effects 0.000 claims description 14
- 239000003989 dielectric material Substances 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 33
- 239000000758 substrate Substances 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 16
- 230000006378 damage Effects 0.000 description 11
- 230000007704 transition Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- 238000006731 degradation reaction Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910021480 group 4 element Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000001010 compromised effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 235000015067 sauces Nutrition 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 but not limited to Chemical compound 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
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- H01L29/66409—Unipolar field-effect transistors
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Description
この発明は、エネルギー先端研究計画局(ARPA−E)により与えられた受託番号DE−AR0000016の下で政府の支援によりなされたものである。政府は本発明に一定の権利を有する。
本願において、用語「III−V族」は、1つのV族元素および少なくとも1つのIII族元素を含む化合物半導体を指す。さらに、用語「III族窒化物」は、窒素(N)、およびアルミニウム(Al)、ガリウム(Ga)およびホウ素(B)を含む、少なくとも1つのIII族元素を含む化合物半導体を指し、例えば、窒化アルミニウムガリウム(AlxGa(1−x)N)、窒化インジウムガリウム(InyGa(1−y)N)、窒化アルミニウムインジウムガリウム(AlxInyGa(1−x−y)N)、ヒ化リン化窒化ガリウム(GaAsaPbN(1−a−b))、ヒ化リン化窒化アルミニウムインジウムガリウム(AlxInyGa(1−x-y)AsaPbN(1−a−b))のような任意の合金を含むがそれらに限定されない。III族窒化物は、一般的には、Ga極性、N極性、半極性、無極性の結晶方位を含む任意の極性も指すがそれらに限定されない。III族窒化物材料は、ウルツ鉱、セン亜鉛鉱、または混合ポリタイプおよび単結晶、多結晶、またはアモルファス構造を含むことができる。
Claims (18)
- ドレイン電極およびソース電極と、
第1の複数のゲート誘電体セグメントと、該第1の複数のゲート誘電体セグメントよりも厚い第2の複数のセグメント化誘電体セグメントと、前記第1の複数のゲート誘電体セグメントおよび前記第2の複数のゲート誘電体セグメント上に配置されたゲート電極とを含み、導電性チャネルにより前記ドレイン電極と前記ソース電極との間の伝導を制御するセグメント化ゲート領域と、
を備え、
前記セグメント化ゲート領域は、前記トランジスタがオフの時の前記ドレイン電極と前記ソース電極との間のパンチスルー破壊に対する耐性を改善するように構成されていることを特徴とするトランジスタ。 - 前記セグメント化ゲート領域は少なくとも3つのゲート誘電体セグメントを含む、請求項1に記載のトランジスタ。
- 前記セグメント化ゲート領域は、前記少なくとも3つのゲート誘電体セグメントのそれぞれの長さの和よりも大きい有効ゲート長を有する、請求項2に記載のトランジスタ。
- 前記セグメント化ゲート領域は前記第2の複数のセグメント化誘電体セグメントのそれぞれの長さの和よりも大きい有効ゲート長を有する、請求項1に記載のトランジスタ。
- 前記セグメント化ゲート領域は、少なくとも3つのゲート誘電体セグメントを含み、前記第2の複数のセグメント化誘電体セグメントおよび前記少なくとも3つのゲート誘電体セグメントのそれぞれの長さの和にほぼ等しい有効ゲート長を有する、請求項1に記載のトランジスタ。
- 前記セグメント化ゲート領域は、少なくとも3つのゲート誘電体セグメントを含み、前記第2の複数のセグメント化誘電体セグメントの下方の前記導電性チャネルのピンチオフ電圧は、前記少なくとも3つのゲート誘電体セグメントの下方の前記導電性チャネルのピンチオフ電圧よりも大きい、請求項1に記載のトランジスタ。
- 前記第2の複数のセグメント化誘電体セグメントは、酸化シリコンおよび窒化シリコンのうちの1つで形成されている、請求項1に記載のトランジスタ。
- 前記第1の複数のゲート誘電体セグメントは、酸化シリコンおよび窒化シリコンのうちの1つで形成されている、請求項1に記載のトランジスタ。
- 前記導電性チャネルは2次元電子ガス(2DEG)を含む、請求項1に記載のトランジスタ。
- 前記トランジスタはIII−V族ヘテロ構造電界効果トランジスタ(III−V族HFET)を備える、請求項1に記載のトランジスタ。
- 前記トランジスタはIII族窒化物高電子移動度トランジスタ(III族窒化物HEMT)を備える、請求項1に記載のトランジスタ。
- 前記トランジスタは、窒化ガリウム(GaN)で形成されたチャネル層と、該チャネル層の上に配置された窒化アルミニウムガリウムで形成されたバリア層とを含む、請求項1に記載のトランジスタ。
- 前記第2の複数のセグメント化誘電体セグメントは前記ソース電極に巻き付いている、請求項1に記載のトランジスタ。
- 前記ゲート電極は金属を備える、請求項1に記載のトランジスタ。
- 少なくとも2つのフィールド誘電体セグメントをさらに備える、請求項1に記載のトランジスタ。
- 少なくとも3つのゲート誘電体セグメントと少なくとも2つのフィールド誘電体セグメントとをさらに備える、請求項1に記載のトランジスタ。
- 少なくとも2つのフィールド誘電体セグメントをさらに備え、該フィールド誘電体セグメントおよび前記第2の複数のセグメント化誘電体セグメントは同じ誘電体材料から形成される、請求項1に記載のトランジスタ。
- フィールドプレートをさらに備える、請求項1に記載のトランジスタ。
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US201261600407P | 2012-02-17 | 2012-02-17 | |
US61/600,407 | 2012-02-17 | ||
US13/750,986 US8969881B2 (en) | 2012-02-17 | 2013-01-25 | Power transistor having segmented gate |
US13/750,986 | 2013-01-25 |
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JP5668085B2 true JP5668085B2 (ja) | 2015-02-12 |
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JP5551790B2 (ja) * | 2009-12-03 | 2014-07-16 | エプコス アクチエンゲゼルシャフト | 横方向のエミッタおよびコレクタを有するバイポーラトランジスタならびに製造方法 |
JP6087552B2 (ja) * | 2012-09-21 | 2017-03-01 | トランスフォーム・ジャパン株式会社 | 化合物半導体装置及びその製造方法 |
JP5779284B2 (ja) * | 2012-09-28 | 2015-09-16 | シャープ株式会社 | スイッチング素子 |
JP6193677B2 (ja) | 2013-08-28 | 2017-09-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2015073073A (ja) * | 2013-09-06 | 2015-04-16 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP6194769B2 (ja) * | 2013-11-12 | 2017-09-13 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6248574B2 (ja) * | 2013-11-22 | 2017-12-20 | 富士通株式会社 | 半導体装置及びその製造方法 |
US9837523B2 (en) | 2015-12-23 | 2017-12-05 | Synopsys, Inc. | Tined gate to control threshold voltage in a device formed of materials having piezoelectric properties |
JP2017126610A (ja) * | 2016-01-12 | 2017-07-20 | トヨタ自動車株式会社 | スイッチング素子 |
DE102018222414A1 (de) * | 2018-12-20 | 2020-06-25 | Robert Bosch Gmbh | Segmentierter Leistungstransistor mit Alterungsmanagement |
CN109659366A (zh) * | 2018-12-21 | 2019-04-19 | 英诺赛科(珠海)科技有限公司 | 高电子迁移率晶体管及其制造方法 |
DE102019008601A1 (de) * | 2019-12-12 | 2021-06-17 | Forschungszentrum Jülich GmbH | Bauelementstruktureinheit |
JP2022037706A (ja) * | 2020-08-25 | 2022-03-09 | 富士通株式会社 | 半導体装置及びその製造方法 |
CN113224148B (zh) * | 2021-04-29 | 2022-04-08 | 电子科技大学 | 具有氮化硅阻挡层的sgt器件及制备方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6352484A (ja) * | 1986-08-22 | 1988-03-05 | Hitachi Ltd | 半導体装置 |
JPH03292772A (ja) * | 1990-04-11 | 1991-12-24 | Hitachi Ltd | 半導体装置 |
JP2744126B2 (ja) * | 1990-10-17 | 1998-04-28 | 株式会社東芝 | 半導体装置 |
US5338954A (en) * | 1991-10-31 | 1994-08-16 | Rohm Co., Ltd. | Semiconductor memory device having an insulating film and a trap film joined in a channel region |
JP3266433B2 (ja) | 1994-12-22 | 2002-03-18 | 三菱電機株式会社 | 半導体装置の製造方法 |
US6225669B1 (en) * | 1998-09-30 | 2001-05-01 | Advanced Micro Devices, Inc. | Non-uniform gate/dielectric field effect transistor |
US6815764B2 (en) * | 2003-03-17 | 2004-11-09 | Samsung Electronics Co., Ltd. | Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same |
US7161203B2 (en) * | 2004-06-04 | 2007-01-09 | Micron Technology, Inc. | Gated field effect device comprising gate dielectric having different K regions |
JP2006147768A (ja) * | 2004-11-18 | 2006-06-08 | Toshiba Corp | 半導体装置およびその製造方法 |
US7190050B2 (en) * | 2005-07-01 | 2007-03-13 | Synopsys, Inc. | Integrated circuit on corrugated substrate |
JP2009522812A (ja) * | 2006-01-09 | 2009-06-11 | インターナショナル レクティファイアー コーポレイション | 電界緩和機能を有するiii族窒化物電力半導体 |
JP5564791B2 (ja) | 2008-12-26 | 2014-08-06 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US20100314695A1 (en) | 2009-06-10 | 2010-12-16 | International Rectifier Corporation | Self-aligned vertical group III-V transistor and method for fabricated same |
US9312343B2 (en) | 2009-10-13 | 2016-04-12 | Cree, Inc. | Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials |
WO2011100304A1 (en) | 2010-02-09 | 2011-08-18 | Massachusetts Institute Of Technology | Dual-gate normally-off nitride transistors |
US8937357B2 (en) * | 2010-03-01 | 2015-01-20 | Broadcom Corporation | One-time programmable semiconductor device |
JP2012004573A (ja) | 2011-07-15 | 2012-01-05 | Sharp Corp | 電界効果トランジスタ |
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EP2629334B1 (en) | 2018-01-31 |
US20130214283A1 (en) | 2013-08-22 |
EP2629334A2 (en) | 2013-08-21 |
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