JP7100770B2 - Mos構造およびストレッサを有する炭化珪素パワーデバイス - Google Patents
Mos構造およびストレッサを有する炭化珪素パワーデバイス Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 103
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 100
- 239000000463 material Substances 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 108091006146 Channels Proteins 0.000 description 140
- 239000010410 layer Substances 0.000 description 131
- 230000000052 comparative effect Effects 0.000 description 50
- 239000004065 semiconductor Substances 0.000 description 25
- 235000012431 wafers Nutrition 0.000 description 15
- 239000013078 crystal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本発明は、請求項1のプリアンブルに従うMOS構造を備える炭化珪素パワーデバイスに関する。
US2014/077232A1から、しきい値電圧の経時変化を抑制することができる半導体装置およびその製造方法が公知である。US2014/077232A1に開示される半導体装置は、半導体基板上に形成されるドリフト層と、ドリフト層の表層に互いから離間して形成される第1のウェル領域と、ドリフト層および第1のウェル領域の各々の上に延在して形成されるゲート絶縁膜と、ゲート絶縁膜上に選択的に形成されるゲート電極と、ゲート絶縁膜を貫通して第1のウェル領域の各々の内部に達するソースコンタクトホールと、ソースコンタクトホールの少なくとも側面に形成されかつその中に圧縮応力が残留する残留圧縮応力層と、を備える。
先行技術での以上の欠点に鑑みて、本発明の目的は、SiCとゲート絶縁層との間の界面、およびゲート絶縁層の下の最初の数ナノメートルのSiCの中のトラップの上述の有害な影響を最も効率的に克服することができるMOS構造を備える炭化珪素パワーデバイスを提供することである。
図中で使用する参照符号およびそれらの意味を参照符号の一覧に要約する。概して、同様の要素は、明細書を通じて同じ参照符号を有する。記載される実施形態および比較例は例示であり、本発明の範囲を限定するものではない。
101 炭化珪素ウェハ
102、502 第1の主側
103、503 第2の主側
105 ドリフト層
107 ドレイン層
115 第1のチャネル領域
117 第1のソース領域
118 第1のベース層
118’ 第1のp+ベース層部分
110、210、310、410、510 第1のストレッサ
120、220、320、420、520 第2のストレッサ
125 第2のチャネル領域
127 第2のソース領域
128 第2のベース層
128’ 第2のp+ベース層部分
130、530 ゲート層
131、531 ゲート絶縁層
211、311 第3のストレッサ
221、321 第4のストレッサ
500 横型パワーMOSFET
509 SiC層
515 チャネル領域
517 ソース領域
527 ドレイン領域
X 第1の横方向
Y 第2の横方向
Z 直交方向
Claims (13)
- 炭化珪素パワーデバイスであって、前記炭化珪素パワーデバイスは縦型パワーMOSFET(400)またはIGBTであり、前記炭化珪素パワーデバイスは、第1の主側(102)および前記第1の主側(102)とは反対の第2の主側(103)を有する炭化珪素ウェハ(101)を備え、前記炭化珪素ウェハ(101)は、
第1の導電型の第1のチャネル領域(115)と、
前記第1の導電型とは異なる第2の導電型の第1のソース領域(117)とを備え、前記第1のソース領域(117)は、前記第1の主側(102)に平行の第1の横方向において前記第1のチャネル領域(115)の第1の横側に配置され、さらに
前記第2の導電型のドリフト層(105)を備え、前記ドリフト層(105)の第1の部分は、前記第1のチャネル領域(115)の第2の横側に配置され、前記第2の横側は前記第1の横側とは反対であり、前記ドリフト層(105)の第2の部分は、前記第1の部分から前記第2の主側(103)に向かって延在し、さらに
前記ドリフト層(105)から前記第1のソース領域(117)を分離する前記第1の導電型の第1のベース層(118)と、
前記第1の導電型の第2のチャネル領域(125)とを備え、前記第2のチャネル領域(125)は、前記第1のチャネル領域(115)の前記第2の横側に配置され、かつ前記ドリフト層(105)の前記第1の部分によって前記第1のチャネル領域(115)から横方向に分離され、さらに
前記第2の導電型の第2のソース領域(127)を備え、前記第2のソース領域(127)および前記ドリフト層(105)の前記第1の部分は、前記第2のチャネル領域(125)の対向する横側に配置され、さらに
前記ドリフト層(105)から前記第2のソース領域(127)を分離する前記第1の導電型の第2のベース層(128)を備え、
前記炭化珪素パワーデバイスはさらに、前記第1の主側(102)上に延在して前記第1のチャネル領域(115)および前記第2のチャネル領域(125)に重なるように配置されるゲート絶縁層(131)を備え、前記ゲート絶縁層(131)は、前記第1のチャネル領域(115)および前記第2のチャネル領域(125)のすぐ上に存在し、さらに
前記ゲート絶縁層(131)のすぐ上に導電ゲート層(130;530)を備え、これにより、前記ゲート層(130;530)は、前記ゲート絶縁層(131)によって前記第1のチャネル領域(115)および前記第2のチャネル領域から分離され、さらに
前記第1の主側(102)において前記炭化珪素ウェハ(101)内に配置される第1のストレッサ(110;210;310;410;510)と、
前記第1の主側(102)において前記炭化珪素ウェハ(101)内に配置される第2のストレッサ(420)とを備え、
前記第1のチャネル領域(115)、前記ドリフト層(105)の前記第1の部分、および前記第2のチャネル領域(125)は、前記第1の主側に平行でありかつ前記第1の横方向に垂直である第2の横方向において、前記第1のストレッサ(410)と前記第2のストレッサ(420)との間に横方向に配置され、これにより、前記第1のストレッサ(410)および前記第2のストレッサ(420)によって前記第1のチャネル領域(115)および前記第2のチャネル領域(125)に応力が導入されることを特徴とする、炭化珪素パワーデバイス。 - 前記ゲート絶縁層(131;531)は酸化珪素層である、請求項1に記載の炭化珪素パワーデバイス。
- 前記第1のストレッサ(410)は、前記第1のチャネル領域(115)に直接接しているか、または連続炭化珪素領域によって前記第1のチャネル領域(115)に接続される、請求項1または2に記載の炭化珪素パワーデバイス。
- 前記第1のストレッサ(410)の材料は、酸化物、窒化珪素(SiN)もしくは窒化アルミニウムなどの窒化物、またはセラミック化合物のうちの1つである、請求項1から3のいずれか1項に記載の炭化珪素パワーデバイス。
- 前記第1のストレッサ(410)は非導電性である、請求項1から4のいずれか1項に記載の炭化珪素パワーデバイス。
- 前記第1のチャネル領域(115)における前記応力の絶対値は、少なくとも0.5GPaである、請求項1から5のいずれか1項に記載の炭化珪素パワーデバイス。
- 前記第1のチャネル領域(115)における前記応力の絶対値は、少なくとも0.7GPaである、請求項6に記載の炭化珪素パワーデバイス。
- 前記第1のストレッサ(110;210;310;410;510)と前記第1のチャネル領域(115)との間の距離は、10μm未満である、請求項1から7のいずれか1項に記載の炭化珪素パワーデバイス。
- 前記第1のストレッサ(110;210;310;410;510)と前記第1のチャネル領域(115)との間の距離は、5μm未満である、請求項8に記載の炭化珪素パワーデバイス。
- 前記第1のストレッサ(110;210;310;410;510)と前記第1のチャネル領域(115)との間の距離は、2.5μm未満である、請求項9に記載の炭化珪素パワーデバイス。
- 前記第1のストレッサ(410)は、前記第1の主側(102)から少なくとも50nmの深さまで延在し、第1の横方向(X)に少なくとも100nm延在し、かつ前記第1の横方向(X)に垂直の第2の横方向(Y)に少なくとも100nm延在する、請求項1から10のいずれか1項に記載の炭化珪素パワーデバイス。
- 前記第1のストレッサ(410)および前記第2のストレッサ(420)は、前記第1のチャネル領域(115)、前記ドリフト層(105)の前記第1の部分、および前記第2のチャネル領域(125)に直接接する、請求項1から11のいずれか1項に記載の炭化珪素パワーデバイス。
- 前記第1のチャネル領域(115)、前記第2のチャネル領域(125)、前記第1のストレッサ(410)、および前記第2のストレッサ(420)は、前記第1の主側(102)に垂直でありかつ前記第1のチャネル領域(115)と前記第2のチャネル領域(125)との間に延在する平面に対して鏡面対称の構成で配置される、請求項1から12のいずれか1項に記載の炭化珪素パワーデバイス。
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EP18215379 | 2018-12-21 | ||
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PCT/EP2019/085340 WO2020127041A1 (en) | 2018-12-21 | 2019-12-16 | Silicon carbide power device with mos structure and stressor |
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US20040232513A1 (en) | 2003-05-23 | 2004-11-25 | Taiwan Semiconductor Manufacturing Co. | Silicon strain engineering accomplished via use of specific shallow trench isolation fill materials |
US20050181536A1 (en) | 2004-01-27 | 2005-08-18 | Fuji Electric Holdings Co., Ltd. | Method of manufacturing silicon carbide semiconductor device |
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US20160149031A1 (en) | 2014-11-21 | 2016-05-26 | JaeHyun JUNG | Semiconductor devices including patterns in a source region |
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CN113169230A (zh) | 2021-07-23 |
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WO2020127041A1 (en) | 2020-06-25 |
EP3753052B1 (en) | 2021-07-28 |
CN113169230B (zh) | 2022-06-14 |
EP3753052A1 (en) | 2020-12-23 |
US11302811B2 (en) | 2022-04-12 |
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