JP7472090B2 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title description 8
- 238000000034 method Methods 0.000 title description 3
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- 230000005684 electric field Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
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- 238000005468 ion implantation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009024 positive feedback mechanism Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
図1をもとに、実施形態の半導体装置100の構成を説明する。
第3電極第2部分32は、Z方向において、第3電極第1部分31と第1部分111との間に位置する。第3電極第3部分33は、X方向において隣り合った第2部分112の間の領域及びX方向において隣り合った第4半導体領域14の間の領域にまたがって位置する。第3電極第2部分32は、X方向において、第1絶縁領域35を介して第2部分112及び第4半導体領域14と向かい合う。第3電極第2部分32は、X方向において、第1幅W1よりも短い第2幅W2の長さを有する(W1>W2。)
図4は、第1変形例に係る半導体装置の断面図である。図3に付した符号で図1に付した符号と同じ符号は同じ対象を示す。第1変形例の半導体装置101は、トレンチコンタクト構造を有する点で実施形態の半導体装置100と異なる。第1変形例において、半導体装置101は第2電極2にコンタクト部分21を有する。第1変形例において、半導体装置101は、p+型の第5半導体領域15を有する。
第2変形例は、第1実施形態の半導体装置に比べて、第2半導体領域12の幅すなわちチャネル幅が狭い。例えば、図1にW12で示す第2半導体領域12のX方向の幅は10nm以上200nm以下である。
図7は、第3変形例に係る半導体装置の断面図である。第3変形例の半導体装置103は、第2ゲート電極5及び第3絶縁領域55を有する点で、半導体装置100と異なる。第3変形例のある断面(図7)において、Z方向において、1つの第1半導体領域11第2部分112と第2電極2との間には、少なくとも2つの第2半導体領域12と少なくとも2つの第3半導体領域13がある。
第2電極(ソース電極):2
第3電極(MOSFETのフィールドプレート電極、JFETのゲート電極):3
ゲート電極:4
第2ゲート電極:5
半導体層:10
第1半導体領域:11
第1部分:111
第2部分:112
第3部分:113
第2半導体領域:12
第3半導体領域:13
第4半導体領域:14
第5半導体領域:15
第2絶縁領域:35
トレンチ:39
第1絶縁領域:45
電極パッド:48
トレンチ:49
第3絶縁領域:55
電極パッド:58
Claims (11)
- 第1電極と、
第2電極と、
前記第1電極から前記第2電極へ向かう第1方向において前記第1電極と第2電極との間に位置し、第1部分と複数の第2部分とを有する、第1導電形の第1半導体領域であって、
前記第1部分は、前記第1電極に電気的に接続され、前記第1方向に交わる第2方向に延び、
前記第2部分は、前記第1方向において前記第1部分から前記第2電極に向かって延びる、第1半導体領域と、
前記第1方向において前記第2部分と前記第2電極と間に位置する第2導電型の第2半導体領域と、
前記第1方向において前記第2半導体領域と前記第2電極との間に位置し、前記第2電極と電気的に接続された、第1導電型の第3半導体領域と、
前記第1方向において前記第2部分と前記第2電極との間に位置する第2導電型の第4半導体領域と、
前記第1方向において前記第1部分と前記第2電極との間に位置し、前記第2方向において少なくとも一部が、前記第2部分と並んで位置し、前記第2電極及び前記第4半導体領域に電気的に接続された第3電極と、
前記第3電極と、前記第1部分及び前記第2部分との間に位置する第1絶縁領域と、
前記第1方向において前記第4半導体領域と前記第2電極の間に位置し、第2方向において前記第2半導体領域及び前記第3半導体領域と前記第3電極との間に位置するゲート電極と、
前記ゲート電極と、前記第1半導体領域、前記第2半導体領域、第3半導体領域、前記第4半導体領域及び前記第2電極と、の間を電気的に分離する第2絶縁領域と、を備えた半導体装置。 - 前記ゲート電極を複数有し、
前記第2方向に隣り合った2つの前記ゲート電極の間に、前記第2半導体領域及び前記第3半導体領域が位置する請求項1に記載の半導体装置。 - 前記第4半導体領域と前記第1絶縁領域とは、前記第2方向において隣接する、請求項1又は請求項2に記載の半導体装置。
- 前記第4半導体領域と前記第3電極とは、前記第2方向において接する、請求項1から請求項3のいずれか1項に記載の半導体装置。
- 前記第4半導体領域に含まれる第2導電型不純物の濃度は、前記第2半導体領域に含まれる第2導電型不純物濃度よりも高い、請求項1から請求項4のいずれか1項に記載の半導体装置。
- 前記第2電極は、前記第1方向において前記第1電極側に延びるコンタクト部分を含み、
前記第1方向において、前記第2半導体領域と前記第2電極との間に位置し、前記コンタクト部分と前記第2半導体領域及び前記第3半導体領域との間に位置し、第2導電型の不純物濃度が前記第2半導体領域に含まれる第2導電型不純物濃度よりも高い第5半導体領域を有する、請求項1から請求項5のいずれか1項に記載の半導体装置。 - 前記第5半導体領域は、前記第2方向において、前記第3半導体領域と前記コンタクト部分との間に位置する、請求項6に記載の半導体装置。
- 前記第5半導体領域は、前記第1方向及び前記第2方向に交わる第3方向において、前記第3半導体領域と前記コンタクト部分との間に位置する、請求項6に記載の半導体装置。
- 前記第2半導体領域の前記第2方向における幅は、10nm以上200nm以下である、請求項1から請求項8のいずれか1項に記載の半導体装置。
- 前記第1方向において前記第2部分と前記第2電極との間に位置する第2ゲート電極と、
前記第2ゲート電極と前記第1半導体領域、前記第2半導体領域、第3半導体領域及び前記第2電極とを電気的に分離する第3絶縁領域と、をさらに有し、
前記第2ゲート電極と前記ゲート電極とは、前記第2方向に離間し、互いに電気的に分離され、
前記第2半導体領域と前記第3半導体領域は、前記第2方向において前記第2ゲート電極と前記ゲート電極との間に位置する、請求項1から請求項9のいずれか1項に記載の半導体装置。 - 半導体基板に第1導電型の第1半導体領域を形成する工程と、
前記第1導電型の前記第1半導体領域に複数のトレンチを形成し、前記トレンチ内部に第1絶縁領域を形成し、前記トレンチ内部に導電材料を充填する工程と、
前記トレンチ側壁及び前記トレンチ外部の前記導電材料及び前記第1絶縁領域を除去する工程と、
前記複数のトレンチの間に位置する第1半導体領域に第2導電型の不純物を注入し、第2導電型の第2半導体領域と第4半導体領域を形成する工程と、
前記導電材料と前記第4半導体領域とが接触するように、トレンチ内部にさらに導電材料を充填する工程と、
前記第2半導体領域に別のトレンチを形成し、前記別のトレンチ内部に第2絶縁領域を形成し、前記別のトレンチ内部に導電材料を充填し、ゲート電極を形成する工程と、
前記第2半導体領域に第1導電型の不純物を注入し、前記第1導電型の第3半導体領域を形成する工程と、を含む半導体装置の製造方法。
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JP2015118966A (ja) | 2013-12-17 | 2015-06-25 | トヨタ自動車株式会社 | 半導体装置 |
US20150214336A1 (en) | 2012-02-13 | 2015-07-30 | Maxpower Semiconductor, Inc. | Trench transistors and methods with low-voltage-drop shunt to body diode |
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US20150214336A1 (en) | 2012-02-13 | 2015-07-30 | Maxpower Semiconductor, Inc. | Trench transistors and methods with low-voltage-drop shunt to body diode |
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