JP2018152555A5 - - Google Patents

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Publication number
JP2018152555A5
JP2018152555A5 JP2018031470A JP2018031470A JP2018152555A5 JP 2018152555 A5 JP2018152555 A5 JP 2018152555A5 JP 2018031470 A JP2018031470 A JP 2018031470A JP 2018031470 A JP2018031470 A JP 2018031470A JP 2018152555 A5 JP2018152555 A5 JP 2018152555A5
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JP
Japan
Prior art keywords
active layer
conductive
distribution structure
charge distribution
layer
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JP2018031470A
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English (en)
Japanese (ja)
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JP2018152555A (ja
JP7154015B2 (ja
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Priority claimed from US15/448,724 external-priority patent/US10192981B2/en
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Publication of JP2018152555A5 publication Critical patent/JP2018152555A5/ja
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Publication of JP7154015B2 publication Critical patent/JP7154015B2/ja
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JP2018031470A 2017-03-03 2018-02-26 電荷分配構造物を含むスイッチングデバイス Active JP7154015B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/448,724 2017-03-03
US15/448,724 US10192981B2 (en) 2012-06-29 2017-03-03 Switching device with charge distribution structure

Publications (3)

Publication Number Publication Date
JP2018152555A JP2018152555A (ja) 2018-09-27
JP2018152555A5 true JP2018152555A5 (enExample) 2021-01-07
JP7154015B2 JP7154015B2 (ja) 2022-10-17

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ID=61563158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018031470A Active JP7154015B2 (ja) 2017-03-03 2018-02-26 電荷分配構造物を含むスイッチングデバイス

Country Status (4)

Country Link
EP (1) EP3370260A1 (enExample)
JP (1) JP7154015B2 (enExample)
CN (1) CN108538917A (enExample)
TW (1) TWI756375B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250046345A (ko) 2019-07-12 2025-04-02 파워 인티그레이션즈, 인크. 고 전자 이동도 트랜지스터의 고 전압 동작을 향상시키기 위한 정전용량 네트워크 및 그 방법
CN112768358B (zh) * 2020-12-31 2024-08-09 扬州扬杰电子科技股份有限公司 一种氮化镓高电子迁移率晶体管及其制备方法
US11774296B2 (en) * 2021-11-11 2023-10-03 Alpha And Omega Semiconductor International Lp Method and circuit for sensing MOSFET temperature for load switch application

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008034522A (ja) 2006-07-27 2008-02-14 Oki Electric Ind Co Ltd 電界効果トランジスタ
JP5609083B2 (ja) * 2009-12-01 2014-10-22 日本電気株式会社 半導体装置、電子装置、半導体装置の製造方法および使用方法
US10002957B2 (en) * 2011-12-21 2018-06-19 Power Integrations, Inc. Shield wrap for a heterostructure field effect transistor
US9245879B2 (en) * 2012-06-29 2016-01-26 Power Integrations, Inc. Static discharge system
US20140001479A1 (en) 2012-06-29 2014-01-02 Power Integrations, Inc. Switching device with charge distribution structure
JP6270572B2 (ja) 2014-03-19 2018-01-31 株式会社東芝 半導体装置及びその製造方法
WO2016100805A1 (en) * 2014-12-19 2016-06-23 Sensor Electronic Technology, Inc. Semiconductor device with multiple space-charge control electrodes

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