JP2018152555A - 電荷分配構造物を含むスイッチングデバイス - Google Patents
電荷分配構造物を含むスイッチングデバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 230000005669 field effect Effects 0.000 claims description 10
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 8
- 238000013461 design Methods 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000001052 transient effect Effects 0.000 claims 2
- 229910002704 AlGaN Inorganic materials 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 15
- 238000002161 passivation Methods 0.000 description 30
- 230000005684 electric field Effects 0.000 description 16
- 230000007704 transition Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 230000010287 polarization Effects 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000005421 electrostatic potential Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000005516 deep trap Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241001481828 Glyptocephalus cynoglossus Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000012995 silicone-based technology Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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Abstract
Description
本出願は、現時点で放棄されている発明の名称を「電荷分配構造物を含むスイッチングデバイス(SWITCHING DEVICE WITH CHARGE DISTRIBUTION STRUCTURE)」とする2012年6月29日に出願された米国特許出願第13/537,407号の継続出願である、発明の名称を「電荷分配構造物を含むスイッチングデバイス(SWITCHING DEVICE WITH CHARGE DISTRIBUTION STRUCTURE)」とする2016年12月22日に出願された米国特許出願第15/388,812号の一部継続出願である。本出願は、参照により全体が本明細書に組み込まれる、米国特許第9,245,879号(弁護士整理番号2024/8)および第9,425,195号(弁護士整理番号2024/8C1)、ならびに、発明の名称を「静電放電システム(Static Discharge System)」とする2016年7月25日に出願された同時係属中の米国特許出願第15/218,145号(弁護士整理番号2024/8C2)に関係する。
C(EM||EM+1) = (40V/150V) * C(EM+1||channel)
Claims (19)
- 基材と、
前記基材の上方に位置する第1の活性層と、
前記第1の活性層と第2の活性層との間に横方向導電チャネルが生じるように、前記第1の活性層上に位置する前記第2の活性層と、
前記第2の活性層の上方に位置する、ソース接点とゲート接点とドレイン接点と、
前記ゲート接点と前記ドレイン接点との間において前記第2の活性層の上方に位置する導電性電荷分配構造物と、
を備え、
前記導電性電荷分配構造物が、前記ゲート接点に容量的にのみ結合され、
前記導電性電荷分配構造物が、複数の電荷分配構造物コンポーネントを含み、
前記電荷分配構造物コンポーネントのうちの第1の電荷分配構造物コンポーネントが、前記ゲート接点に容量的にのみ結合され、
前記電荷分配構造物コンポーネントのうちの第2の電荷分配構造物コンポーネントが、前記第1の電荷分配構造物コンポーネントに容量的にのみ結合され、
前記電荷分配構造物コンポーネントの各々が、第1の長尺部材と第2の長尺部材とが互いに電気的に接続されるように、第1の層内に形成された前記第1の長尺部材と第2の層内に形成された前記第2の長尺部材とを含み、
前記横方向導電チャネルの長さが、25マイクロメートル未満である、
半導体デバイス。 - 前記電荷分配構造物が、第1の距離ぶん前記ゲート接点から横方向に離間しており、
前記電荷分配構造物が、前記第1の距離より大きな第2の距離ぶん前記ドレイン接点から離間している、
請求項1に記載の半導体デバイス。 - 前記第2の活性層と前記電荷分配構造物との間に位置する誘電体層をさらに備える、
請求項1に記載の半導体デバイス。 - 前記誘電体層が、前記第2の活性層と前記ゲート接点との間にさらに位置する、
請求項3に記載の半導体デバイス。 - 前記第1の活性層が、III族窒化物半導体材料を含む、
請求項1に記載の半導体デバイス。 - 前記第1の活性層が、GaNを含む、
請求項5に記載の半導体デバイス。 - 前記第2の活性層が、III族窒化物半導体材料を含む、
請求項1に記載の半導体デバイス。 - 前記第2の活性層が、AlXGa1−XNを含み、0<X<1である、
請求項7に記載の半導体デバイス。 - 前記第2の活性層が、AlGaN、AlInN、およびAlInGaNからなる群から選択された、
請求項7に記載の半導体デバイス。 - 電界効果トランジスタ(FET)であって、
基材上に位置する複数の半導体層と、
前記半導体層に電気的に結合されたソースとドレインとゲートと、
前記半導体層の上方に位置して、ゲートに容量的にのみ結合された、容量結合された電荷分配構造物と、
を備え、
前記電荷分配構造物が、オン状態からオフ状態への過渡状態中の、前記ゲートと前記ドレインとの間に位置する前記トランジスタの表面部分における表面放電と、前記オフ状態から前記オン状態への過渡状態中の、前記表面部分における表面再充電とをもたらすように構成され、
容量結合された前記電荷分配構造物が、前記表面部分の上方に位置する複数の導電性長尺部材を含む金属グリッドを含み、
前記導電性長尺部材が、互いに容量結合され、
前記導電性長尺部材の各々が、第1の長尺部材と第2の長尺部材とが互いに電気的に接続されるように、第1の層内に形成された前記第1の長尺部材と第2の層内に形成された前記第2の長尺部材とを含み、
前記導電性長尺部材のうちの1つの前記導電性長尺部材の前記第1の長尺部材が、前記導電性長尺部材のうちの別の前記導電性長尺部材の前記第2の長尺部材のうちの1つと少なくとも部分的に重なり、
前記横方向導電チャネルの長さが、25マイクロメートル未満である、
電界効果トランジスタ(FET)。 - 前記FETが、設計目標のスイッチング速度をもち、
前記電荷分配構造物が、前記設計目標のスイッチング速度より大きな速度で前記表面放電と再充電とをもたらすようにさらに構成された、
請求項10に記載の電界効果トランジスタ。 - 複数の前記導電性長尺部材が、周期的に反復する構造物を規定する、
請求項10に記載の電界効果トランジスタ。 - 第1のセットの前記長尺部材に含まれる前記長尺部材が、互いに平行であり、
第2のセットの前記長尺部材に含まれる前記長尺部材が、互いに平行である、
請求項10に記載の電界効果トランジスタ。 - 前記表面放電が、前記表面部分から、前記表面部分において達成される最大電荷の少なくとも約90%を除去する、
請求項10に記載の電界効果トランジスタ。 - 前記表面再充電が、前記表面部分における電荷を少なくとも前記最大電荷の90%に増やす、
請求項14に記載の電界効果トランジスタ。 - 半導体デバイスを形成する方法であって、
基材上に第1の活性層を形成することと、
前記第1の活性層と第2の活性層とが前記第1の活性層と前記第2の活性層との間において二次元電子気体層を発生させるように、前記第1の活性層の上方に前記第2の活性層を形成することと、
前記第2の活性層の上方にソース接点とゲート接点とドレイン接点とを形成することと、
前記ゲート接点に容量的にのみ結合されるように電荷分配構造物が結合されるように、前記ゲート接点と前記ドレイン接点との間において前記第2の活性層の上方に前記電荷分配構造物を形成することと、
を含み、
前記電荷分配構造物が、前記半導体デバイスの表面部分の上方に位置する複数の導電性長尺部材を含む金属グリッドを含み、
前記導電性長尺部材が、互いに容量結合され、
第1の長尺部材と第2の長尺部材とが互いに電気的に接続されるように、前記導電性長尺部材の各々が、第1の層内に形成された前記第1の長尺部材と第2の層内に形成された前記第2の長尺部材とを含み、
前記第1の層内における前記第1の長尺部材が、前記導電性長尺部材のうちの別の前記導電性長尺部材の前記第2の長尺部材のうちの1つと少なくとも部分的に重なる、
半導体デバイスを形成する方法。 - 前記第1の層内における前記導電性長尺部材のうちの少なくとも1つが、前記第2の層内における前記長尺部材のうちの1つと少なくとも部分的に重なる、
請求項1に記載の半導体デバイス。 - 前記導電性長尺部材が、互いに容量的にのみ結合された、
請求項10に記載の電界効果トランジスタ。 - 前記導電性長尺部材が、互いに容量的にのみ結合された、
請求項16に記載の方法。
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US15/448,724 US10192981B2 (en) | 2012-06-29 | 2017-03-03 | Switching device with charge distribution structure |
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US20140001479A1 (en) * | 2012-06-29 | 2014-01-02 | Power Integrations, Inc. | Switching device with charge distribution structure |
JP2015179786A (ja) * | 2014-03-19 | 2015-10-08 | 株式会社東芝 | 半導体装置 |
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JP5609083B2 (ja) * | 2009-12-01 | 2014-10-22 | 日本電気株式会社 | 半導体装置、電子装置、半導体装置の製造方法および使用方法 |
US10002957B2 (en) * | 2011-12-21 | 2018-06-19 | Power Integrations, Inc. | Shield wrap for a heterostructure field effect transistor |
US9245879B2 (en) * | 2012-06-29 | 2016-01-26 | Power Integrations, Inc. | Static discharge system |
WO2016100805A1 (en) * | 2014-12-19 | 2016-06-23 | Sensor Electronic Technology, Inc. | Semiconductor device with multiple space-charge control electrodes |
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---|---|---|---|---|
JP2008034522A (ja) * | 2006-07-27 | 2008-02-14 | Oki Electric Ind Co Ltd | 電界効果トランジスタ |
US20140001479A1 (en) * | 2012-06-29 | 2014-01-02 | Power Integrations, Inc. | Switching device with charge distribution structure |
JP2015179786A (ja) * | 2014-03-19 | 2015-10-08 | 株式会社東芝 | 半導体装置 |
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TWI756375B (zh) | 2022-03-01 |
EP3370260A1 (en) | 2018-09-05 |
CN108538917A (zh) | 2018-09-14 |
TW201836149A (zh) | 2018-10-01 |
JP7154015B2 (ja) | 2022-10-17 |
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