JP2015179786A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 281
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 8
- 238000009413 insulation Methods 0.000 abstract 2
- 229910002601 GaN Inorganic materials 0.000 description 109
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 108
- 230000004888 barrier function Effects 0.000 description 44
- 230000005684 electric field Effects 0.000 description 26
- 230000015556 catabolic process Effects 0.000 description 15
- 239000012535 impurity Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000002040 relaxant effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
Description
本実施形態の半導体装置は、第1のGaN系半導体層と、第1のGaN系半導体層上に設けられ、第1のGaN系半導体層よりバンドギャップの大きい第2のGaN系半導体層と、第2のGaN系半導体層上に設けられるソース電極と、第2のGaN系半導体層上に設けられるドレイン電極と、ソース電極とドレイン電極の間に、第1のGaN系半導体層との間にゲート絶縁膜を介在させて設けられ、第1のGaN系半導体との間の第2のGaN系半導体層の膜厚が、ソース電極と第1のGaN系半導体との間の第2のGaN系半導体層の膜厚よりも薄いゲート電極と、ゲート電極のドレイン電極側の端部と第2のGaN系半導体層との間に、ゲート電極との間にゲート絶縁膜を介在させて設けられるp型の第3のGaN系半導体層と、を備える。
y×0.4×1013<d×NA<y×4×1013・・・(式1)
の関係を充足することが望ましい。
y×4×1013<d×NP<y×40×1013・・・(式2)
と変形される。
本実施形態の半導体装置は、ゲート電極の第1のGaN系半導体層に最も近い部分と第1のGaN系半導体との間に第2のGaN系半導体層が存在すること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、第2のGaN系半導体層とゲート絶縁膜との界面が傾斜していること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、ゲート絶縁膜と第3のGaN系半導体層との間に、ゲート絶縁膜と材料の異なる保護膜を、さらに備えること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、第3のGaN系半導体層とドレイン電極との間の、第2のGaN系半導体層の第1のGaN系半導体層と反対側に設けられ、第3のGaN系半導体層と分離されるp型の第5のGaN系半導体層を、さらに備えること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、第2のGaN系半導体層と第3のGaN系半導体層との間にi型の第6のGaN系半導体層を備えること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、第1のフィールドプレート電極との間に絶縁膜を介在させ、第3のGaN系半導体層との間に絶縁膜を介在させて設けられる第2のフィールドプレート電極をさらに備え、第2のフィールドプレート電極のドレイン電極側の端部と、第2のGaN系半導体層との間に、第3のGaN系半導体層が位置すること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、バファ層とチャネル層との間に、第7のGaN系半導体層と、第7のGaN系半導体層上に設けられ、第7のGaN系半導体層よりバンドギャップの大きい第8のGaN系半導体層とをさらに備えること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、第1のフィールドプレート電極を備えないこと以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については、記述を省略する。
16 バリア層(第2のGaN系半導体層)
18 ソース電極
20 ドレイン電極
22 ゲート絶縁膜
24 リサーフ層(第3のGaN系半導体層)
26 ゲート電極
28 ソースフィールドプレート電極(第1のフィールドプレート電極)
30 絶縁膜
32 絶縁膜
34 リサーフ層(第5のGaN系半導体層)
36 リサーフ層(第5のGaN系半導体層)
42 ゲートフィールドプレート電極(第2のフィールドプレート電極)
54 リサーフ層(第4のGaN系半導体層)
100 HEMT(半導体装置)
200 HEMT(半導体装置)
300 HEMT(半導体装置)
400 HEMT(半導体装置)
500 HEMT(半導体装置)
600 HEMT(半導体装置)
700 HEMT(半導体装置)
800 HEMT(半導体装置)
900 HEMT(半導体装置)
Claims (15)
- 第1のGaN系半導体層と、
前記第1のGaN系半導体層上に設けられ、前記第1のGaN系半導体層よりバンドギャップの大きい第2のGaN系半導体層と、
前記第2のGaN系半導体層上に設けられるソース電極と、
前記第2のGaN系半導体層上に設けられるドレイン電極と、
前記ソース電極と前記ドレイン電極の間に、前記第1のGaN系半導体層との間にゲート絶縁膜を介在させて設けられ、前記第1のGaN系半導体との間の前記第2のGaN系半導体層の膜厚が、前記ソース電極と前記第1のGaN系半導体との間の前記第2のGaN系半導体層の膜厚よりも薄いゲート電極と、
前記ゲート電極の前記ドレイン電極側の端部と前記第2のGaN系半導体層との間に、前記ゲート電極との間に前記ゲート絶縁膜を介在させて設けられるp型の第3のGaN系半導体層と、
を備えることを特徴とする半導体装置。 - 前記第3のGaN系半導体層の前記第2のGaN系半導体層と反対側に設けられる絶縁膜と、
前記第3のGaN系半導体層との間に前記絶縁膜を介在させて設けられる第1のフィールドプレート電極をさらに備え、
前記第1のフィールドプレート電極の前記ドレイン電極側の端部と、前記第2のGaN系半導体層との間に、前記第3のGaN系半導体層が位置することを特徴とする請求項1記載の半導体装置。 - 前記第3のGaN系半導体層がフローティングであることを特徴とする請求項1または請求項2記載の半導体装置。
- 前記第3のGaN系半導体層が前記第2のGaN系半導体層に接することを特徴とする請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記ゲート絶縁膜が前記第1のGaN系半導体層に接することを特徴とする請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記第3のGaN系半導体層のアクセプタの面密度が、前記第1のGaN系半導体層と前記第2のGaN系半導体層との界面に生成される2次元電子ガスの面密度よりも低いことを特徴とする請求項1ないし請求項5いずれか一項記載の半導体装置。
- 前記第2のGaN系半導体層と前記ゲート絶縁膜との界面が傾斜していることを特徴とする請求項1ないし請求項6いずれか一項記載の半導体装置。
- 前記ゲート絶縁膜と前記第3のGaN系半導体層との間に、前記ゲート絶縁膜と材料の異なる保護膜を、さらに備えることを特徴とする請求項1ないし請求項7いずれか一項記載の半導体装置。
- 前記ゲート電極の前記ソース電極側の端部と前記第2のGaN系半導体層との間に、前記ゲート電極との間に前記ゲート絶縁膜を介在させて設けられるp型の第4のGaN系半導体層を、さらに備えることを特徴とする請求項1ないし請求項8いずれか一項記載の半導体装置。
- 前記第3のGaN系半導体層と前記ドレイン電極との間の、前記第2のGaN系半導体層の前記第1のGaN系半導体層と反対側に設けられ、前記第3のGaN系半導体層と分離されるp型の第5のGaN系半導体層を、さらに備えることを特徴とする請求項1ないし請求項9いずれか一項記載の半導体装置。
- 前記第3のGaN系半導体層の膜厚が、10nm以上100nm以下であることを特徴とする請求項1ないし請求項10いずれか一項記載の半導体装置。
- 前記第1のフィールドプレート電極との間に絶縁膜を介在させ、前記第3のGaN系半導体層との間に絶縁膜を介在させて設けられる第2のフィールドプレート電極をさらに備え、
前記第2のフィールドプレート電極の前記ドレイン電極側の端部と、前記第2のGaN系半導体層との間に、前記第3のGaN系半導体層が位置することを特徴とする請求項2記載の半導体装置。 - 第1のGaN系半導体層上にエピタキシャル成長法により、前記第1のGaN系半導体層よりバンドギャップの大きい第2のGaN系半導体層を形成し、
前記第2のGaN系半導体層上に、p型の第3のGaN系半導体層を形成し、
前記p型の第3のGaN系半導体層を貫通し、前記第2のGaN系半導体層に達するトレンチを形成し、
前記トレンチおよび前記第3のGaN系半導体層の表面にゲート絶縁膜を形成し、
前記ゲート絶縁膜上にゲート電極を形成し、
前記ゲート電極の一方の側の前記第2のGaN系半導体層上にソース電極を形成し、前記ゲート電極の他方の側の前記第2のGaN系半導体層上にドレイン電極を形成することを特徴とする半導体装置の製造方法。 - 前記p型の第3のGaN系半導体層をエピタキシャル成長法により形成することを特徴とする請求項13記載の半導体装置の製造方法。
- 前記ゲート電極上に、絶縁膜を形成し、
前記絶縁膜上に第1のフィールドプレート電極を形成することを特徴とする請求項13または請求項14記載の半導体装置の製造方法。
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