JP5298006B2 - Iii族窒化物パワー半導体デバイス - Google Patents
Iii族窒化物パワー半導体デバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 30
- 230000007246 mechanism Effects 0.000 claims description 43
- 150000004767 nitrides Chemical class 0.000 claims description 43
- 230000009467 reduction Effects 0.000 claims description 24
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 230000005684 electric field Effects 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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Description
この出願は、2006年3月20日に出願された米国仮出願連続番号第60/784,054号および2007年3月19日に出願された米国特許出願連続番号(割当てられる予定)に基づいており、それらの優先権を主張し、それらの開示全体は引用により本明細書に援用される。
本明細書において用いられているIII族窒化物(またはIII−N)とは、窒素を少なくとも含むInAlGaN系からの半導体合金およびIII族からの別の合金要素のことをいう。AlN、GaN、AlGaN、InGaN、InAlGaN、または窒素およびIII族からの少なくとも1つの要素を含む任意の組合せが、III族窒化物合金の例である。
図1を参照して、従来のIII族窒化物パワー半導体デバイスは、III族窒化物ヘテロ接合体10を含む。III族窒化物ヘテロ接合体10は、1つのIII族窒化物半導体合金(たとえば、GaN)で形成された第1のIII族窒化物半導体本体12と、バンドギャップが第1のIII族窒化物半導体本体12のバンドギャップとは異なっている別のIII族窒化物半導体合金(たとえば、AlGaN)で形成された、本体12上の第2のIII族窒化物半導体本体14とを含む。
2.フィールドプレート26は、高電界ポイントをフィールドプレート26の端縁に移動させるが、依然として変化が発生することを可能にし得る。
この発明に従うデバイスでは、導電性の2−DEG中の可動電荷の濃度を選択的に低減することによってゲートの端縁および角におけるピーク電界が低減される。
図5を参照して、図5では同様の数字が同様の特徴を示しているのだが、この発明に従うデバイスでは、2−DEG16は、ゲート機構22の下に存在する電荷低減領域34を含む。電荷低減領域34は好ましくは、ゲート機構22の2倍の幅があり、ゲート機構22の少なくとも1つの端縁を越えて延びていてもよく、2−DEGが導電状態にあるときには隣接する2−DEG16の領域よりも導電性が低い。すなわち、オン状態では(パワー電極18とパワー電極20との間が導通しているときには)、領域34はその両側に隣接する2−DEG16の領域よりも少ない数のキャリアを含む。その結果、デバイスのオフ状態時のゲート機構22の端縁付近の電界は先行技術と比較して弱く、これによってフィールドプレートを省略することが可能であり得る。なお、電荷低減領域34は、第1の(ソース)パワー電極18および第2の(ドレイン)パワー電極20に対してまたはゲート機構22に対して対称的に位置決めされる必要はない。したがって、電荷低減領域34は、不連続であり、ゲート機構22の片側に2つの部分34′、34″の各々の状態で配置されてもよく(図9A)、ドレイン電極の方向にさらに先に延びていてもよく(図9B)、またはドレイン電極の方向にしか延びていなくてもよく(図9C)、ソース電極に向かってゲート機構22を越えて延びる部分を含んでいなくてもよい。領域34の幅は、最適化されることができ、数十ナノメートルから数千ナノメートルの間であると予想される。
Claims (15)
- パワー半導体デバイスであって、
第1のIII族窒化物本体およびバンドギャップが前記第1のIII族窒化物本体のバンドギャップとは異なっている第2のIII族窒化物本体を含むIII族窒化物ヘテロ接合体と、
前記第2のIII族窒化物本体に結合された第1のパワー電極と、
前記第2のIII族窒化物本体に結合された第2のパワー電極と、
前記第1のパワー電極と前記第2のパワー電極との間に配置されたゲート機構と、
導電状態で、隣接する領域よりも導電性が低く、前記ゲート機構よりも幅が広く、前記
ゲート機構の対向する2つの端縁を越えて延びる電荷低減領域を前記ゲート機構の下に含
む二次元電子ガスを含む導電性チャネルとを備え、
前記電荷低減領域は不連続であり、前記ゲート機構の前記対向する2つの端縁のそれぞれに配置される、パワー半導体デバイス。 - 前記ゲート機構はゲート絶縁体を含む、請求項1に記載のパワー半導体デバイス。
- 前記ゲート機構はショットキー体を含む、請求項1に記載のパワー半導体デバイス。
- 前記ゲート機構は、前記電荷低減領域の上の凹部に受けられる、請求項1に記載のパワー半導体デバイス。
- 前記凹部は、前記電荷低減領域を引起すように構成される、請求項4に記載のパワー半導体デバイス。
- 前記凹部は、前記ゲート機構よりも幅が広い、請求項4に記載のパワー半導体デバイス。
- 前記電荷低減領域を引起すように構成された少なくとも1つの注入領域を前記ゲート機構の下の前記第2のIII族窒化物本体にさらに備える、請求項1に記載のパワー半導体デバイス。
- 前記ゲート機構はフィールドプレートを含まない、請求項1に記載のパワー半導体デバイス。
- 前記III族窒化物ヘテロ接合体の上に配置されたパッシベーション体をさらに備える、請求項1に記載のパワー半導体デバイス。
- 前記第1のIII族窒化物本体はInAlGaN系からの半導体合金からなっており、前記第2のIII族窒化物本体はInAlGaN系からの別の合金からなっている、請求項1に記載のパワー半導体デバイス。
- 前記第1のIII族窒化物本体はGaNからなっており、前記第2のIII族窒化物本体はAlGaNからなっている、請求項1に記載のパワー半導体デバイス。
- 前記ヘテロ接合体は、シリコン、シリコンカーバイド、サファイア、GaN、およびIII族窒化物材料のうちの1つからなる基板の上に配置される、請求項1に記載のパワー半導体デバイス。
- パワー半導体デバイスであって、
第1のIII族窒化物本体およびバンドギャップが前記第1のIII族窒化物本体のバンドギャップとは異なっている第2のIII族窒化物本体を含むIII族窒化物ヘテロ接合体と、
前記第2のIII族窒化物本体に結合された第1のパワー電極と、
前記第2のIII族窒化物本体に結合された第2のパワー電極と、
前記第1のパワー電極と前記第2のパワー電極との間に配置されたゲート機構と、
導電状態で、隣接する領域よりも導電性が低い電荷低減領域を前記ゲート機構の下に含
む二次元電子ガスを含む導電性チャネルとを備え、
前記電荷低減領域は、前記ゲート機構の端縁を越えて前記パワー電極の一方の方にのみ延び、前記ゲート機構の下に実質的に延在しない、パワー半導体デバイス。 - パワー半導体デバイスであって、
第1のIII族窒化物本体およびバンドギャップが前記第1のIII族窒化物本体のバンドギャップとは異なっている第2のIII族窒化物本体を含むIII族窒化物ヘテロ接合体と、
前記第2のIII族窒化物本体に結合された第1のパワー電極と、
前記第2のIII族窒化物本体に結合された第2のパワー電極と、
前記第1のパワー電極と前記第2のパワー電極との間に配置されたゲート機構と、
導電状態で、隣接する領域よりも導電性が低い電荷低減領域を前記ゲート機構の下に含む二次元電子ガスを含む導電性チャネルとを備え、
前記電荷低減領域は、前記ゲート機構の対向する2つの端縁を越えて延び、他方のパワー電極よりも一方のパワー電極の方にさらに先に延びており、
前記電荷低減領域は不連続であり、前記ゲート機構の前記対向する2つの端縁のそれぞれに配置される、パワー半導体デバイス。 - パワー半導体デバイスであって、
第1のIII族窒化物本体およびバンドギャップが前記第1のIII族窒化物本体のバンドギャップとは異なっている第2のIII族窒化物本体を含むIII族窒化物ヘテロ接合体と、
前記第2のIII族窒化物本体に結合された第1のパワー電極と、
前記第2のIII族窒化物本体に結合された第2のパワー電極と、
前記第1のパワー電極と前記第2のパワー電極との間に配置されたゲート機構と、
導電状態で、隣接する領域よりも導電性が低い電荷低減領域を前記ゲート機構の下に含む二次元電子ガスを含む導電性チャネルとを備え、
前記電荷低減領域は不連続であり、前記ゲート機構の中央部の下に前記電荷低減領域が存在しない、パワー半導体デバイス。
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Application Number | Priority Date | Filing Date | Title |
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US78405406P | 2006-03-20 | 2006-03-20 | |
US60/784,054 | 2006-03-20 | ||
US11/725,430 US7408208B2 (en) | 2006-03-20 | 2007-03-19 | III-nitride power semiconductor device |
US11/725,430 | 2007-03-19 | ||
PCT/US2007/006903 WO2007109265A2 (en) | 2006-03-20 | 2007-03-20 | Iii-nitrite power semiconductor device |
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JP2009530857A JP2009530857A (ja) | 2009-08-27 |
JP5298006B2 true JP5298006B2 (ja) | 2013-09-25 |
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US (4) | US7408208B2 (ja) |
JP (1) | JP5298006B2 (ja) |
CN (1) | CN101410975B (ja) |
DE (1) | DE112007000668B4 (ja) |
WO (1) | WO2007109265A2 (ja) |
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US8455920B2 (en) * | 2007-05-23 | 2013-06-04 | International Rectifier Corporation | III-nitride heterojunction device |
JP5655424B2 (ja) * | 2010-08-09 | 2015-01-21 | サンケン電気株式会社 | 化合物半導体装置 |
JP5715588B2 (ja) * | 2012-03-28 | 2015-05-07 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP5701805B2 (ja) * | 2012-03-28 | 2015-04-15 | 株式会社東芝 | 窒化物半導体ショットキダイオードの製造方法 |
JP6111821B2 (ja) * | 2013-04-25 | 2017-04-12 | 三菱電機株式会社 | 電界効果トランジスタ |
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JP4186032B2 (ja) | 2000-06-29 | 2008-11-26 | 日本電気株式会社 | 半導体装置 |
US6593193B2 (en) * | 2001-02-27 | 2003-07-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
JP2005527102A (ja) * | 2001-07-24 | 2005-09-08 | クリー インコーポレイテッド | 高電子移動度トランジスタ及びその製造方法 |
AU2003266701A1 (en) * | 2002-10-09 | 2004-05-04 | Matsushita Electric Industrial Co., Ltd. | Plasma oscillation switching device |
US7501669B2 (en) * | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
JP2005203544A (ja) | 2004-01-15 | 2005-07-28 | Mitsubishi Electric Corp | 窒化物半導体装置とその製造方法 |
US7382001B2 (en) * | 2004-01-23 | 2008-06-03 | International Rectifier Corporation | Enhancement mode III-nitride FET |
US8174048B2 (en) * | 2004-01-23 | 2012-05-08 | International Rectifier Corporation | III-nitride current control device and method of manufacture |
US7612390B2 (en) * | 2004-02-05 | 2009-11-03 | Cree, Inc. | Heterojunction transistors including energy barriers |
US7465997B2 (en) | 2004-02-12 | 2008-12-16 | International Rectifier Corporation | III-nitride bidirectional switch |
JP4642366B2 (ja) * | 2004-03-26 | 2011-03-02 | 日本碍子株式会社 | 半導体積層構造、トランジスタ素子、およびトランジスタ素子の製造方法 |
JP2006032552A (ja) | 2004-07-14 | 2006-02-02 | Toshiba Corp | 窒化物含有半導体装置 |
JP4607506B2 (ja) * | 2004-07-16 | 2011-01-05 | 株式会社東芝 | 半導体装置 |
US7238560B2 (en) | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
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WO2007109265A2 (en) | 2007-09-27 |
WO2007109265B1 (en) | 2008-05-15 |
US9923052B2 (en) | 2018-03-20 |
US20160380092A1 (en) | 2016-12-29 |
DE112007000668T5 (de) | 2009-01-29 |
US20080067548A1 (en) | 2008-03-20 |
JP2009530857A (ja) | 2009-08-27 |
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