JP7154015B2 - 電荷分配構造物を含むスイッチングデバイス - Google Patents

電荷分配構造物を含むスイッチングデバイス Download PDF

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JP7154015B2
JP7154015B2 JP2018031470A JP2018031470A JP7154015B2 JP 7154015 B2 JP7154015 B2 JP 7154015B2 JP 2018031470 A JP2018031470 A JP 2018031470A JP 2018031470 A JP2018031470 A JP 2018031470A JP 7154015 B2 JP7154015 B2 JP 7154015B2
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distribution structure
charge distribution
active layer
conductive
charge
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Japanese (ja)
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JP2018152555A5 (enExample
JP2018152555A (ja
Inventor
クディモフ アレクセイ
ラムダニ ジャマール
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パワー・インテグレーションズ・インコーポレーテッド
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Priority claimed from US15/448,724 external-priority patent/US10192981B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2018031470A 2017-03-03 2018-02-26 電荷分配構造物を含むスイッチングデバイス Active JP7154015B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/448,724 2017-03-03
US15/448,724 US10192981B2 (en) 2012-06-29 2017-03-03 Switching device with charge distribution structure

Publications (3)

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JP2018152555A JP2018152555A (ja) 2018-09-27
JP2018152555A5 JP2018152555A5 (enExample) 2021-01-07
JP7154015B2 true JP7154015B2 (ja) 2022-10-17

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JP2018031470A Active JP7154015B2 (ja) 2017-03-03 2018-02-26 電荷分配構造物を含むスイッチングデバイス

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EP (1) EP3370260A1 (enExample)
JP (1) JP7154015B2 (enExample)
CN (1) CN108538917A (enExample)
TW (1) TWI756375B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250046345A (ko) 2019-07-12 2025-04-02 파워 인티그레이션즈, 인크. 고 전자 이동도 트랜지스터의 고 전압 동작을 향상시키기 위한 정전용량 네트워크 및 그 방법
CN112768358B (zh) * 2020-12-31 2024-08-09 扬州扬杰电子科技股份有限公司 一种氮化镓高电子迁移率晶体管及其制备方法
US11774296B2 (en) * 2021-11-11 2023-10-03 Alpha And Omega Semiconductor International Lp Method and circuit for sensing MOSFET temperature for load switch application

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008034522A (ja) 2006-07-27 2008-02-14 Oki Electric Ind Co Ltd 電界効果トランジスタ
US20140001479A1 (en) 2012-06-29 2014-01-02 Power Integrations, Inc. Switching device with charge distribution structure
JP2015179786A (ja) 2014-03-19 2015-10-08 株式会社東芝 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5609083B2 (ja) * 2009-12-01 2014-10-22 日本電気株式会社 半導体装置、電子装置、半導体装置の製造方法および使用方法
US10002957B2 (en) * 2011-12-21 2018-06-19 Power Integrations, Inc. Shield wrap for a heterostructure field effect transistor
US9245879B2 (en) * 2012-06-29 2016-01-26 Power Integrations, Inc. Static discharge system
WO2016100805A1 (en) * 2014-12-19 2016-06-23 Sensor Electronic Technology, Inc. Semiconductor device with multiple space-charge control electrodes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008034522A (ja) 2006-07-27 2008-02-14 Oki Electric Ind Co Ltd 電界効果トランジスタ
US20140001479A1 (en) 2012-06-29 2014-01-02 Power Integrations, Inc. Switching device with charge distribution structure
JP2015179786A (ja) 2014-03-19 2015-10-08 株式会社東芝 半導体装置

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Publication number Publication date
EP3370260A1 (en) 2018-09-05
TW201836149A (zh) 2018-10-01
JP2018152555A (ja) 2018-09-27
CN108538917A (zh) 2018-09-14
TWI756375B (zh) 2022-03-01

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