JP2014508413A - 低伝導電界制御素子を有する半導体デバイス - Google Patents
低伝導電界制御素子を有する半導体デバイス Download PDFInfo
- Publication number
- JP2014508413A JP2014508413A JP2013553667A JP2013553667A JP2014508413A JP 2014508413 A JP2014508413 A JP 2014508413A JP 2013553667 A JP2013553667 A JP 2013553667A JP 2013553667 A JP2013553667 A JP 2013553667A JP 2014508413 A JP2014508413 A JP 2014508413A
- Authority
- JP
- Japan
- Prior art keywords
- electric field
- field control
- control element
- gate
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005684 electric field Effects 0.000 title claims abstract description 121
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 239000010410 layer Substances 0.000 claims description 51
- 230000005669 field effect Effects 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 23
- 239000002344 surface layer Substances 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 13
- 239000002184 metal Substances 0.000 abstract description 13
- 239000012212 insulator Substances 0.000 abstract description 5
- 238000013461 design Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 4
- 230000000977 initiatory effect Effects 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000004590 computer program Methods 0.000 description 3
- -1 for example Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008094 contradictory effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910016455 AlBN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000203 accumulation affect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
Description
本願は、2011年2月25日に提出された“Semiconductor device with low−conducting field−controlling elements(低伝導電界制御素子を有する半導体デバイス”と題する同時係属米国仮出願第61/442,821号の利益を主張し、それは、参照によってここに組み込まれる。
Claims (21)
- 活性領域を含む半導体、
前記活性領域に対する一組のコンタクト、及び
前記一組のコンタクトの内の少なくとも一つのコンタクトへ連結される電界制御素子、を備えるデバイスであって、前記電界制御素子が、単位平方当り約103オームから単位平方当り約107オームの範囲内のシート抵抗を有する低伝導層を備える、デバイス。 - 前記電界制御素子が表面層であり、且つ電界制御素子と前記一組のコンタクトの内の少なくとも一つが共に前記活性領域の第1の側に配置される、請求項1に記載のデバイス。
- 前記デバイスが一組の電界制御素子を含み、且つ前記一組の電界制御素子が前記活性領域に対応する領域の実質的に全てを被覆する、請求項1に記載のデバイス。
- 前記電界制御素子が前記一組のコンタクトの内の少なくとも一つと電気的に連結される、請求項1に記載のデバイス。
- 前記制御素子が前記一組のコンタクトの内の少なくとも一つと容量的に連結される、請求項1に記載のデバイス。
- 前記電界制御素子が前記活性領域から1マイクロメートル以内にあるデバイスのエピタキシャル構造に配置される層である、請求項1に記載のデバイス。
- 前記デバイスが、電界効果トランジスタとして動作するように構成される、請求項1に記載のデバイス。
- 前記電界制御素子が、前記電界制御素子のシート抵抗よりも少なくとも一桁高いシート抵抗を有する絶縁層によって前記半導体から少なくとも部分的に絶縁される、請求項1に記載のデバイス。
- 外部バイアス又は外部信号の少なくとも一方を前記電界制御素子へ印加するためのコネクタをさらに備える、請求項1に記載のデバイス。
- 前記電界制御素子は、前記一組のコンタクトの内の少なくとも一つに対する電界変調プレートを形成する、請求項1に記載のデバイス。
- 前記電界制御素子は、不動態化層又はストレインリリーフ層の少なくとも一方を形成する、請求項1に記載のデバイス。
- 前記半導体は、シリコン、炭化ケイ素、又はIII−V族材料の一つから形成される、請求項1に記載のデバイス。
- 前記半導体は、III族窒化物材料から形成される、請求項1に記載のデバイス。
- ソースコンタクト、ドレインコンタクト、及び前記ソースコンタクトと前記ドレインコンタクトとの間のデバイスチャネル、
ゲート、及び
前記ソースコンタクト、前記ドレインコンタクト、又は前記ゲートの内の少なくとも一つへ連結され、且つ単位平方当り約103オームから単位平方当り約107オームの範囲内のシート抵抗を有する低伝導電界制御素子、を備える電界効果トランジスタ。 - 前記電界制御素子が、前記ゲートと前記ドレインコンタクトとの間に配置される表面層である、請求項14に記載のトランジスタ。
- 前記電界制御素子は、前記ソースコンタクトと前記ゲートとの間及び前記ゲートと前記ドレインコンタクトとの間の両方に配置される表面層である、請求項14に記載のトランジスタ。
- 前記電界制御素子と前記デバイスチャネルとの間に絶縁層を更に備え、前記電界制御素子が前記ゲートに付着され且つ前記ゲートと前記ドレインとの間内へ延出する、請求項14に記載のトランジスタ。
- 前記トランジスタが、前記ゲートに対する電界制御プレートと前記ソースコンタクト又は前記ドレインコンタクトの少なくとも一方に対する電界制御プレートを含み、前記電界制御プレートの内の一方が前記電界制御素子である、請求項14に記載のトランジスタ。
- 前記電界制御素子が、前記トランジスタのエピタキシャル構造に配置される、請求項14に記載のトランジスタ。
- 前記電界制御素子が、前記ソースコンタクトへ容量的に連結され、前記トランジスタが、前記ドレインコンタクトへ容量的に連結された第2の低伝導電界制御素子をさらに備える、請求項14に記載のトランジスタ。
- 少なくとも一つの電界効果トランジスタを備えるスイッチであって、この電界効果トランジスタは、
ソースコンタクト、ドレインコンタクト、及び前記ソースコンタクトと前記ドレインコンタクトとの間のデバイスチャネル、
ゲート、及び
前記ソースコンタクト、前記ドレインコンタクト、又は前記ゲートの内の少なくとも一つへ連結され、且つ単位平方当り約103オームから単位平方当り約107オームの範囲内のシート抵抗を有する低伝導電界制御素子を備える、スイッチ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161442821P | 2011-02-15 | 2011-02-15 | |
US61/442,821 | 2011-02-15 | ||
US13/396,059 US8586997B2 (en) | 2011-02-15 | 2012-02-14 | Semiconductor device with low-conducting field-controlling element |
US13/396,059 | 2012-02-14 | ||
PCT/US2012/025146 WO2012112630A1 (en) | 2011-02-15 | 2012-02-15 | Semiconductor device with low-conducting field-controlling element |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014508413A true JP2014508413A (ja) | 2014-04-03 |
JP5735139B2 JP5735139B2 (ja) | 2015-06-17 |
Family
ID=46636215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013553667A Active JP5735139B2 (ja) | 2011-02-15 | 2012-02-15 | 低伝導電界制御素子を有する半導体デバイス |
Country Status (3)
Country | Link |
---|---|
US (1) | US8586997B2 (ja) |
JP (1) | JP5735139B2 (ja) |
WO (1) | WO2012112630A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017220508A (ja) * | 2016-06-06 | 2017-12-14 | サンケン電気株式会社 | 半導体装置 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5758132B2 (ja) | 2011-01-26 | 2015-08-05 | 株式会社東芝 | 半導体素子 |
WO2013036593A1 (en) | 2011-09-06 | 2013-03-14 | Sensor Electronic Technology, Inc. | Semiconductor device with low-conducting field-controlling element |
US9748362B2 (en) | 2011-09-19 | 2017-08-29 | Sensor Electronic Technology, Inc. | High-voltage normally-off field effect transistor with channel having multiple adjacent sections |
US9263533B2 (en) | 2011-09-19 | 2016-02-16 | Sensor Electronic Technology, Inc. | High-voltage normally-off field effect transistor including a channel with a plurality of adjacent sections |
US9673285B2 (en) | 2011-11-21 | 2017-06-06 | Sensor Electronic Technology, Inc. | Semiconductor device with low-conducting buried and/or surface layers |
US9647076B2 (en) | 2011-11-21 | 2017-05-09 | Sensor Electronic Technology, Inc. | Circuit including semiconductor device with multiple individually biased space-charge control electrodes |
US9312347B2 (en) | 2011-11-21 | 2016-04-12 | Sensor Electronic Technology, Inc. | Semiconductor device with multiple space-charge control electrodes |
US8878154B2 (en) | 2011-11-21 | 2014-11-04 | Sensor Electronic Technology, Inc. | Semiconductor device with multiple space-charge control electrodes |
US8994035B2 (en) | 2011-11-21 | 2015-03-31 | Sensor Electronic Technology, Inc. | Semiconductor device with low-conducting buried and/or surface layers |
US9660038B2 (en) | 2012-09-16 | 2017-05-23 | Sensor Electronic Technology, Inc. | Lateral/vertical semiconductor device |
US9391189B2 (en) | 2012-09-16 | 2016-07-12 | Sensor Electronic Technology, Inc. | Lateral/vertical semiconductor device |
WO2014052948A1 (en) | 2012-09-30 | 2014-04-03 | Sensor Electronic Technology, Inc. | Semiconductor device with breakdown preventing layer |
US9741802B2 (en) | 2012-09-30 | 2017-08-22 | Sensor Electronic Technology, Inc. | Semiconductor device with breakdown preventing layer |
US9601611B2 (en) | 2013-07-18 | 2017-03-21 | Sensor Electronic Technology, Inc. | Lateral/vertical semiconductor device with embedded isolator |
KR102100928B1 (ko) * | 2013-10-17 | 2020-05-15 | 삼성전자주식회사 | 고전자 이동도 트랜지스터 |
US9673286B2 (en) * | 2013-12-02 | 2017-06-06 | Infineon Technologies Americas Corp. | Group III-V transistor with semiconductor field plate |
US10867792B2 (en) | 2014-02-18 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same |
JP2015177016A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 半導体装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007027284A (ja) * | 2005-07-13 | 2007-02-01 | Sanken Electric Co Ltd | 電界効果トランジスタ |
JP2007048866A (ja) * | 2005-08-09 | 2007-02-22 | Toshiba Corp | 窒化物半導体素子 |
JP2009253126A (ja) * | 2008-04-09 | 2009-10-29 | Sanken Electric Co Ltd | 半導体装置 |
US20100156475A1 (en) * | 2008-12-23 | 2010-06-24 | Grigory Simin | Field effect transistor with electric field and space-charge control contact |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4638341A (en) | 1984-09-06 | 1987-01-20 | Honeywell Inc. | Gated transmission line model structure for characterization of field-effect transistors |
US5196907A (en) | 1990-08-20 | 1993-03-23 | Siemens Aktiengesellschaft | Metal insulator semiconductor field effect transistor |
US5126284A (en) | 1991-10-25 | 1992-06-30 | Curran Patrick A | Method of inductively contacting semiconductor regions |
US5241193A (en) | 1992-05-19 | 1993-08-31 | Motorola, Inc. | Semiconductor device having a thin-film transistor and process |
US5467021A (en) | 1993-05-24 | 1995-11-14 | Atn Microwave, Inc. | Calibration method and apparatus |
TW264575B (ja) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
JP3907726B2 (ja) | 1995-12-09 | 2007-04-18 | 株式会社半導体エネルギー研究所 | 微結晶シリコン膜の作製方法、半導体装置の作製方法及び光電変換装置の作製方法 |
US6107649A (en) * | 1998-06-10 | 2000-08-22 | Rutgers, The State University | Field-controlled high-power semiconductor devices |
US6538538B2 (en) | 1999-02-25 | 2003-03-25 | Formfactor, Inc. | High frequency printed circuit board via |
US6639255B2 (en) | 1999-12-08 | 2003-10-28 | Matsushita Electric Industrial Co., Ltd. | GaN-based HFET having a surface-leakage reducing cap layer |
US20010009785A1 (en) | 1999-12-30 | 2001-07-26 | Mohamed Arafa | Method of fabricating a supply decoupling capacitor |
US6207584B1 (en) * | 2000-01-05 | 2001-03-27 | International Business Machines Corp. | High dielectric constant material deposition to achieve high capacitance |
US6759839B2 (en) | 2000-01-11 | 2004-07-06 | Anritsu Corporation | Wide-band RF signal power detecting element and power detecting device using the same |
US6690042B2 (en) | 2000-09-27 | 2004-02-10 | Sensor Electronic Technology, Inc. | Metal oxide semiconductor heterostructure field effect transistor |
US6690251B2 (en) | 2001-04-11 | 2004-02-10 | Kyocera Wireless Corporation | Tunable ferro-electric filter |
EP1296148A1 (en) | 2001-09-25 | 2003-03-26 | Agilent Technologies, Inc. (a Delaware corporation) | An apparatus for collecting signal measurement data at signal ports of an RF and microwave device-under-test |
US7148683B2 (en) | 2001-10-25 | 2006-12-12 | Intematix Corporation | Detection with evanescent wave probe |
US6982204B2 (en) | 2002-07-16 | 2006-01-03 | Cree, Inc. | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
US6903385B2 (en) | 2002-10-09 | 2005-06-07 | Sensor Electronic Technology, Inc. | Semiconductor structure having a textured nitride-based layer |
US6998833B2 (en) | 2003-11-05 | 2006-02-14 | Hewlett-Packard Development Company, L.P. | System and method for determining S-parameters using a load |
EP1678345B1 (de) | 2003-11-07 | 2013-11-20 | Henkel AG & Co. KGaA | Farbige chromfreie konversionsschichten auf metalloberflächen |
US7248866B1 (en) | 2003-11-14 | 2007-07-24 | Christos Tsironis | Frequency selective load pull tuner and method |
US7170111B2 (en) | 2004-02-05 | 2007-01-30 | Cree, Inc. | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same |
JP4810072B2 (ja) | 2004-06-15 | 2011-11-09 | 株式会社東芝 | 窒素化合物含有半導体装置 |
US7238560B2 (en) | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
US7466012B2 (en) | 2004-09-13 | 2008-12-16 | International Rectifier Corporation | Power semiconductor package |
US7429534B2 (en) | 2005-02-22 | 2008-09-30 | Sensor Electronic Technology, Inc. | Etching a nitride-based heterostructure |
US7231311B2 (en) | 2005-04-19 | 2007-06-12 | Jan Verspecht | Method for characterizing high-frequency mixers |
US7548069B2 (en) | 2005-06-10 | 2009-06-16 | Maury Microwave, Inc. | Signal measurement systems and methods |
US7932539B2 (en) | 2005-11-29 | 2011-04-26 | The Hong Kong University Of Science And Technology | Enhancement-mode III-N devices, circuits, and methods |
US8044432B2 (en) * | 2005-11-29 | 2011-10-25 | The Hong Kong University Of Science And Technology | Low density drain HEMTs |
TW200817688A (en) | 2006-08-30 | 2008-04-16 | Advantest Corp | Element judging device, method, program, recording medium and measuring device |
US8461631B2 (en) | 2007-02-23 | 2013-06-11 | Sensor Electronic Technology, Inc. | Composite contact for semiconductor device |
US9647103B2 (en) | 2007-05-04 | 2017-05-09 | Sensor Electronic Technology, Inc. | Semiconductor device with modulated field element isolated from gate electrode |
JP2009231396A (ja) | 2008-03-19 | 2009-10-08 | Sumitomo Chemical Co Ltd | 半導体装置および半導体装置の製造方法 |
US8203348B1 (en) | 2009-05-01 | 2012-06-19 | Christos Tsironis | Autonomous impedance tuner with human control interface |
US7999287B2 (en) | 2009-10-26 | 2011-08-16 | Infineon Technologies Austria Ag | Lateral HEMT and method for the production of a lateral HEMT |
-
2012
- 2012-02-14 US US13/396,059 patent/US8586997B2/en active Active
- 2012-02-15 WO PCT/US2012/025146 patent/WO2012112630A1/en active Application Filing
- 2012-02-15 JP JP2013553667A patent/JP5735139B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007027284A (ja) * | 2005-07-13 | 2007-02-01 | Sanken Electric Co Ltd | 電界効果トランジスタ |
JP2007048866A (ja) * | 2005-08-09 | 2007-02-22 | Toshiba Corp | 窒化物半導体素子 |
JP2009253126A (ja) * | 2008-04-09 | 2009-10-29 | Sanken Electric Co Ltd | 半導体装置 |
US20100156475A1 (en) * | 2008-12-23 | 2010-06-24 | Grigory Simin | Field effect transistor with electric field and space-charge control contact |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017220508A (ja) * | 2016-06-06 | 2017-12-14 | サンケン電気株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5735139B2 (ja) | 2015-06-17 |
US8586997B2 (en) | 2013-11-19 |
WO2012112630A1 (en) | 2012-08-23 |
US20120205667A1 (en) | 2012-08-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5735139B2 (ja) | 低伝導電界制御素子を有する半導体デバイス | |
TWI430341B (zh) | 單一或多重閘極場平板之製造 | |
US9660038B2 (en) | Lateral/vertical semiconductor device | |
US9806184B2 (en) | Semiconductor device with low-conducting field-controlling element | |
JP6124511B2 (ja) | ゲート−ソースフィールドプレートを含むワイドバンドギャップトランジスタ | |
US9166048B2 (en) | Lateral/vertical semiconductor device | |
CN108028273B (zh) | 半导体装置和制造半导体装置的方法 | |
US8994035B2 (en) | Semiconductor device with low-conducting buried and/or surface layers | |
US9312347B2 (en) | Semiconductor device with multiple space-charge control electrodes | |
US9647076B2 (en) | Circuit including semiconductor device with multiple individually biased space-charge control electrodes | |
US9748362B2 (en) | High-voltage normally-off field effect transistor with channel having multiple adjacent sections | |
CN103887334A (zh) | GaN高电子迁移率晶体管和GaN二极管 | |
WO2014052948A1 (en) | Semiconductor device with breakdown preventing layer | |
US9673285B2 (en) | Semiconductor device with low-conducting buried and/or surface layers | |
US9391189B2 (en) | Lateral/vertical semiconductor device | |
US9263533B2 (en) | High-voltage normally-off field effect transistor including a channel with a plurality of adjacent sections | |
TWI483397B (zh) | 功率裝置及製造該功率裝置之方法 | |
US9991372B2 (en) | Device with channel having varying carrier concentration | |
WO2016100805A1 (en) | Semiconductor device with multiple space-charge control electrodes | |
KR20150065068A (ko) | 고전자 이동도 트랜지스터 및 이를 포함하는 전자 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140814 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140819 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141119 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150317 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150415 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5735139 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |