JP5313424B2 - トラッピング（ｔｒａｐｐｉｎｇ）を低減させたＩＩＩ族窒化物ベースの電界効果トランジスタ（ＦＥＴ）およびトランジスタの製造方法 - Google Patents

トラッピング（ｔｒａｐｐｉｎｇ）を低減させたＩＩＩ族窒化物ベースの電界効果トランジスタ（ＦＥＴ）およびトランジスタの製造方法 Download PDF

Info

Publication number
JP5313424B2
JP5313424B2 JP2001557092A JP2001557092A JP5313424B2 JP 5313424 B2 JP5313424 B2 JP 5313424B2 JP 2001557092 A JP2001557092 A JP 2001557092A JP 2001557092 A JP2001557092 A JP 2001557092A JP 5313424 B2 JP5313424 B2 JP 5313424B2
Authority
JP
Japan
Prior art keywords
fet
layer
barrier layer
electron
donor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001557092A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004517461A5 (enExample
JP2004517461A (ja
Inventor
ウー イーフェン
シャン ネイキアン
シュ チアン
マッカーシー リー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of JP2004517461A publication Critical patent/JP2004517461A/ja
Publication of JP2004517461A5 publication Critical patent/JP2004517461A5/ja
Application granted granted Critical
Publication of JP5313424B2 publication Critical patent/JP5313424B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Lasers (AREA)
JP2001557092A 2000-02-04 2001-02-01 トラッピング（ｔｒａｐｐｉｎｇ）を低減させたＩＩＩ族窒化物ベースの電界効果トランジスタ（ＦＥＴ）およびトランジスタの製造方法 Expired - Lifetime JP5313424B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US18043500P 2000-02-04 2000-02-04
US60/180,435 2000-02-04
US09/771,800 US6586781B2 (en) 2000-02-04 2001-01-29 Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
US09/771,800 2001-01-29
PCT/US2001/003433 WO2001057929A1 (en) 2000-02-04 2001-02-01 Group iii nitride based fets and hemts with reduced trapping and method for producing the same

Publications (3)

Publication Number Publication Date
JP2004517461A JP2004517461A (ja) 2004-06-10
JP2004517461A5 JP2004517461A5 (enExample) 2005-01-27
JP5313424B2 true JP5313424B2 (ja) 2013-10-09

Family

ID=26876317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001557092A Expired - Lifetime JP5313424B2 (ja) 2000-02-04 2001-02-01 トラッピング（ｔｒａｐｐｉｎｇ）を低減させたＩＩＩ族窒化物ベースの電界効果トランジスタ（ＦＥＴ）およびトランジスタの製造方法

Country Status (10)

Country Link
US (1) US6586781B2 (enExample)
EP (1) EP1261988B1 (enExample)
JP (1) JP5313424B2 (enExample)
KR (1) KR100710654B1 (enExample)
CN (1) CN1260827C (enExample)
AT (1) ATE525751T1 (enExample)
AU (1) AU2001233253A1 (enExample)
CA (1) CA2399547C (enExample)
MY (1) MY130244A (enExample)
WO (1) WO2001057929A1 (enExample)

Families Citing this family (212)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6825501B2 (en) * 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
JP2001284576A (ja) * 2000-03-30 2001-10-12 Toshiba Corp 高電子移動度トランジスタ及びその製造方法
US7892974B2 (en) * 2000-04-11 2011-02-22 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
US7125786B2 (en) * 2000-04-11 2006-10-24 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
US6548333B2 (en) 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
JP3428962B2 (ja) * 2000-12-19 2003-07-22 古河電気工業株式会社 ＧａＮ系高移動度トランジスタ
US6956250B2 (en) * 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
US6593193B2 (en) * 2001-02-27 2003-07-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US6897495B2 (en) * 2001-10-31 2005-05-24 The Furukawa Electric Co., Ltd Field effect transistor and manufacturing method therefor
JP2003209124A (ja) * 2001-11-06 2003-07-25 Sony Corp 電界効果半導体素子の製造方法及び電界効果半導体素子
JP4904299B2 (ja) * 2001-11-27 2012-03-28 古河電気工業株式会社 電力変換装置用ＧａＮ系半導体装置
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
KR100815422B1 (ko) * 2002-02-26 2008-03-20 주식회사 엘지이아이 이종구조 전계효과 트랜지스터 제조방법
JP3951743B2 (ja) 2002-02-28 2007-08-01 松下電器産業株式会社 半導体装置およびその製造方法
US7105868B2 (en) * 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US6982204B2 (en) * 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
US6841001B2 (en) 2002-07-19 2005-01-11 Cree, Inc. Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures
US6897137B2 (en) 2002-08-05 2005-05-24 Hrl Laboratories, Llc Process for fabricating ultra-low contact resistances in GaN-based devices
US20040021152A1 (en) * 2002-08-05 2004-02-05 Chanh Nguyen Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate
US6884704B2 (en) * 2002-08-05 2005-04-26 Hrl Laboratories, Llc Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
US7115896B2 (en) * 2002-12-04 2006-10-03 Emcore Corporation Semiconductor structures for gallium nitride-based devices
US6825559B2 (en) * 2003-01-02 2004-11-30 Cree, Inc. Group III nitride based flip-chip intergrated circuit and method for fabricating
US7078743B2 (en) * 2003-05-15 2006-07-18 Matsushita Electric Industrial Co., Ltd. Field effect transistor semiconductor device
US7135720B2 (en) 2003-08-05 2006-11-14 Nitronex Corporation Gallium nitride material transistors and methods associated with the same
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
EP1665358B1 (en) 2003-09-09 2020-07-01 The Regents of The University of California Fabrication of single or multiple gate field plates
TWI240439B (en) * 2003-09-24 2005-09-21 Sanken Electric Co Ltd Nitride semiconductor device and manufacturing method thereof
TWI243399B (en) * 2003-09-24 2005-11-11 Sanken Electric Co Ltd Nitride semiconductor device
JP2005129696A (ja) * 2003-10-23 2005-05-19 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7649215B2 (en) * 2003-12-05 2010-01-19 International Rectifier Corporation III-nitride device passivation and method
TWI295085B (en) * 2003-12-05 2008-03-21 Int Rectifier Corp Field effect transistor with enhanced insulator structure
US7071498B2 (en) * 2003-12-17 2006-07-04 Nitronex Corporation Gallium nitride material devices including an electrode-defining layer and methods of forming the same
US20050145851A1 (en) * 2003-12-17 2005-07-07 Nitronex Corporation Gallium nitride material structures including isolation regions and methods
US7045404B2 (en) 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7901994B2 (en) * 2004-01-16 2011-03-08 Cree, Inc. Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers
US7033912B2 (en) 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods
US7382001B2 (en) * 2004-01-23 2008-06-03 International Rectifier Corporation Enhancement mode III-nitride FET
US7170111B2 (en) 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7465997B2 (en) * 2004-02-12 2008-12-16 International Rectifier Corporation III-nitride bidirectional switch
US7253015B2 (en) * 2004-02-17 2007-08-07 Velox Semiconductor Corporation Low doped layer for nitride-based semiconductor device
US7084475B2 (en) * 2004-02-17 2006-08-01 Velox Semiconductor Corporation Lateral conduction Schottky diode with plural mesas
JP2005286135A (ja) * 2004-03-30 2005-10-13 Eudyna Devices Inc 半導体装置および半導体装置の製造方法
US7550783B2 (en) 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
US7432142B2 (en) * 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
US7084441B2 (en) 2004-05-20 2006-08-01 Cree, Inc. Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
US7332795B2 (en) * 2004-05-22 2008-02-19 Cree, Inc. Dielectric passivation for semiconductor devices
US7417266B1 (en) 2004-06-10 2008-08-26 Qspeed Semiconductor Inc. MOSFET having a JFET embedded as a body diode
US7361946B2 (en) * 2004-06-28 2008-04-22 Nitronex Corporation Semiconductor device-based sensors
US7339205B2 (en) * 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
US7687827B2 (en) * 2004-07-07 2010-03-30 Nitronex Corporation III-nitride materials including low dislocation densities and methods associated with the same
JP4744109B2 (ja) * 2004-07-20 2011-08-10 トヨタ自動車株式会社 半導体装置とその製造方法
KR100860070B1 (ko) 2004-07-20 2008-09-24 도요다 지도샤 가부시끼가이샤 트랜지스터
US7238560B2 (en) * 2004-07-23 2007-07-03 Cree, Inc. Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
US20060017064A1 (en) * 2004-07-26 2006-01-26 Saxler Adam W Nitride-based transistors having laterally grown active region and methods of fabricating same
KR100616619B1 (ko) * 2004-09-08 2006-08-28 삼성전기주식회사 질화물계 이종접합 전계효과 트랜지스터
JP2006086354A (ja) * 2004-09-16 2006-03-30 Toshiba Corp 窒化物系半導体装置
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US20060073621A1 (en) * 2004-10-01 2006-04-06 Palo Alto Research Center Incorporated Group III-nitride based HEMT device with insulating GaN/AlGaN buffer layer
WO2006050403A2 (en) * 2004-10-28 2006-05-11 Nitronex Corporation Gallium nitride/silicon based monolithic microwave integrated circuit
US7709859B2 (en) * 2004-11-23 2010-05-04 Cree, Inc. Cap layers including aluminum nitride for nitride-based transistors
US7456443B2 (en) * 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
US7247889B2 (en) 2004-12-03 2007-07-24 Nitronex Corporation III-nitride material structures including silicon substrates
US7161194B2 (en) * 2004-12-06 2007-01-09 Cree, Inc. High power density and/or linearity transistors
US7355215B2 (en) * 2004-12-06 2008-04-08 Cree, Inc. Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies
US9640649B2 (en) 2004-12-30 2017-05-02 Infineon Technologies Americas Corp. III-nitride power semiconductor with a field relaxation feature
US7236053B2 (en) * 2004-12-31 2007-06-26 Cree, Inc. High efficiency switch-mode power amplifier
US7436039B2 (en) * 2005-01-06 2008-10-14 Velox Semiconductor Corporation Gallium nitride semiconductor device
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
JP2006295126A (ja) * 2005-03-15 2006-10-26 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子およびエピタキシャル基板
US7465967B2 (en) * 2005-03-15 2008-12-16 Cree, Inc. Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
US7626217B2 (en) * 2005-04-11 2009-12-01 Cree, Inc. Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices
US8575651B2 (en) * 2005-04-11 2013-11-05 Cree, Inc. Devices having thick semi-insulating epitaxial gallium nitride layer
US7544963B2 (en) * 2005-04-29 2009-06-09 Cree, Inc. Binary group III-nitride based high electron mobility transistors
US7615774B2 (en) * 2005-04-29 2009-11-10 Cree.Inc. Aluminum free group III-nitride based high electron mobility transistors
US7365374B2 (en) * 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same
US7405430B2 (en) * 2005-06-10 2008-07-29 Cree, Inc. Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates
US7855401B2 (en) * 2005-06-29 2010-12-21 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7598576B2 (en) * 2005-06-29 2009-10-06 Cree, Inc. Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
US7525122B2 (en) * 2005-06-29 2009-04-28 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US9331192B2 (en) * 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
WO2007006001A2 (en) * 2005-07-06 2007-01-11 International Rectifier Corporation Iii-nitride enhancement mode devices
WO2007007589A1 (ja) * 2005-07-08 2007-01-18 Nec Corporation 電界効果トランジスタおよびその製造方法
JP4730529B2 (ja) * 2005-07-13 2011-07-20 サンケン電気株式会社 電界効果トランジスタ
US20070018198A1 (en) * 2005-07-20 2007-01-25 Brandes George R High electron mobility electronic device structures comprising native substrates and methods for making the same
EP1938385B1 (en) 2005-09-07 2014-12-03 Cree, Inc. Transistors with fluorine treatment
KR20080072833A (ko) * 2005-10-04 2008-08-07 니트로넥스 코오포레이션 광대역 애플리케이션을 위한 갈륨 나이트라이드 물질트랜지스터 및 방법
US8026568B2 (en) 2005-11-15 2011-09-27 Velox Semiconductor Corporation Second Schottky contact metal layer to improve GaN Schottky diode performance
US7566913B2 (en) 2005-12-02 2009-07-28 Nitronex Corporation Gallium nitride material devices including conductive regions and methods associated with the same
US9608102B2 (en) * 2005-12-02 2017-03-28 Infineon Technologies Americas Corp. Gallium nitride material devices and associated methods
JP2009522812A (ja) * 2006-01-09 2009-06-11 インターナショナル レクティファイアー コーポレイション 電界緩和機能を有するｉｉｉ族窒化物電力半導体
US7592211B2 (en) 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
US7709269B2 (en) 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US8101961B2 (en) * 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
JP5362187B2 (ja) * 2006-03-30 2013-12-11 日本碍子株式会社 半導体素子
US8399911B2 (en) * 2006-06-07 2013-03-19 Imec Enhancement mode field effect device and the method of production thereof
US20080001173A1 (en) 2006-06-23 2008-01-03 International Business Machines Corporation BURIED CHANNEL MOSFET USING III-V COMPOUND SEMICONDUCTORS AND HIGH k GATE DIELECTRICS
KR100746622B1 (ko) * 2006-06-29 2007-08-08 주식회사 하이닉스반도체 모스 트랜지스터 제조방법
JP5036233B2 (ja) 2006-07-06 2012-09-26 シャープ株式会社 半導体スイッチング素子および半導体回路装置
US20080035143A1 (en) * 2006-08-14 2008-02-14 Sievers Robert E Human-powered dry powder inhaler and dry powder inhaler compositions
JP2008060017A (ja) * 2006-09-04 2008-03-13 Matsushita Electric Ind Co Ltd マイクロ波利用装置
CN100505304C (zh) * 2006-09-22 2009-06-24 中国科学院微电子研究所 一种氮化镓基场效应管及其制作方法
CN100433365C (zh) * 2006-10-16 2008-11-12 中国电子科技集团公司第五十五研究所 铝镓氮化物/氮化镓高电子迁移率晶体管及制造方法
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
US8283699B2 (en) 2006-11-13 2012-10-09 Cree, Inc. GaN based HEMTs with buried field plates
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
JP5114947B2 (ja) * 2006-12-28 2013-01-09 富士通株式会社 窒化物半導体装置とその製造方法
JP5256618B2 (ja) * 2007-02-19 2013-08-07 サンケン電気株式会社 半導体装置及び半導体装置の製造方法
US8866191B2 (en) * 2007-02-22 2014-10-21 Forschungsverbund Berlin E.V. HEMT semiconductor component with field plates
JP5261946B2 (ja) * 2007-02-26 2013-08-14 サンケン電気株式会社 半導体装置及び半導体装置の製造方法
US7939853B2 (en) * 2007-03-20 2011-05-10 Power Integrations, Inc. Termination and contact structures for a high voltage GaN-based heterojunction transistor
US8212290B2 (en) 2007-03-23 2012-07-03 Cree, Inc. High temperature performance capable gallium nitride transistor
TWI467759B (zh) * 2007-03-29 2015-01-01 Univ California 具有低緩衝漏電及低寄生阻抗之氮面高電子遷移電晶體
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
US8111001B2 (en) 2007-07-17 2012-02-07 Cree, Inc. LED with integrated constant current driver
US7745848B1 (en) 2007-08-15 2010-06-29 Nitronex Corporation Gallium nitride material devices and thermal designs thereof
US8039301B2 (en) * 2007-12-07 2011-10-18 The United States Of America As Represented By The Secretary Of The Navy Gate after diamond transistor
US8026581B2 (en) * 2008-02-05 2011-09-27 International Rectifier Corporation Gallium nitride material devices including diamond regions and methods associated with the same
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US8343824B2 (en) * 2008-04-29 2013-01-01 International Rectifier Corporation Gallium nitride material processing and related device structures
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
JP5056883B2 (ja) * 2010-03-26 2012-10-24 サンケン電気株式会社 半導体装置
JP5665171B2 (ja) * 2010-05-14 2015-02-04 住友電気工業株式会社 Ｉｉｉ族窒化物半導体電子デバイス、ｉｉｉ族窒化物半導体電子デバイスを作製する方法
US8829999B2 (en) 2010-05-20 2014-09-09 Cree, Inc. Low noise amplifiers including group III nitride based high electron mobility transistors
US8368121B2 (en) 2010-06-21 2013-02-05 Power Integrations, Inc. Enhancement-mode HFET circuit arrangement having high power and high threshold voltage
JP2010283372A (ja) * 2010-07-30 2010-12-16 Sumitomo Electric Device Innovations Inc 半導体装置
KR101680767B1 (ko) 2010-10-06 2016-11-30 삼성전자주식회사 불순물 주입을 이용한 고출력 고 전자 이동도 트랜지스터 제조방법
JP5455875B2 (ja) * 2010-11-25 2014-03-26 日本碍子株式会社 エピタキシャル基板の製造方法
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8895993B2 (en) * 2011-01-31 2014-11-25 Taiwan Semiconductor Manufacturing Company, Ltd. Low gate-leakage structure and method for gallium nitride enhancement mode transistor
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
KR20130004760A (ko) * 2011-07-04 2013-01-14 삼성전자주식회사 파워소자 및 이의 제조방법
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US9748362B2 (en) 2011-09-19 2017-08-29 Sensor Electronic Technology, Inc. High-voltage normally-off field effect transistor with channel having multiple adjacent sections
US9263533B2 (en) * 2011-09-19 2016-02-16 Sensor Electronic Technology, Inc. High-voltage normally-off field effect transistor including a channel with a plurality of adjacent sections
JP5546514B2 (ja) * 2011-09-20 2014-07-09 古河電気工業株式会社 窒化物半導体素子及び製造方法
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
US8884308B2 (en) * 2011-11-29 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor structure with improved breakdown voltage performance
US8633094B2 (en) 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
US8530978B1 (en) * 2011-12-06 2013-09-10 Hrl Laboratories, Llc High current high voltage GaN field effect transistors and method of fabricating same
US8940620B2 (en) 2011-12-15 2015-01-27 Power Integrations, Inc. Composite wafer for fabrication of semiconductor devices
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
US8941148B2 (en) 2012-03-06 2015-01-27 Infineon Technologies Austria Ag Semiconductor device and method
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
US8937336B2 (en) 2012-05-17 2015-01-20 The Hong Kong University Of Science And Technology Passivation of group III-nitride heterojunction devices
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
US20140021934A1 (en) * 2012-07-17 2014-01-23 Transphorm, Inc. Devices and components for power conversion circuits
US20140077266A1 (en) * 2012-09-14 2014-03-20 Power Integrations, Inc. Heterostructure Transistor with Multiple Gate Dielectric Layers
JP6087552B2 (ja) * 2012-09-21 2017-03-01 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
US8994073B2 (en) 2012-10-04 2015-03-31 Cree, Inc. Hydrogen mitigation schemes in the passivation of advanced devices
US9812338B2 (en) 2013-03-14 2017-11-07 Cree, Inc. Encapsulation of advanced devices using novel PECVD and ALD schemes
US9991399B2 (en) 2012-10-04 2018-06-05 Cree, Inc. Passivation structure for semiconductor devices
US9171730B2 (en) 2013-02-15 2015-10-27 Transphorm Inc. Electrodes for semiconductor devices and methods of forming the same
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
US9443737B2 (en) * 2013-04-03 2016-09-13 Texas Instruments Incorporated Method of forming metal contacts in the barrier layer of a group III-N HEMT
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9407214B2 (en) 2013-06-28 2016-08-02 Cree, Inc. MMIC power amplifier
CN103367416B (zh) * 2013-07-04 2015-09-30 西安电子科技大学 离子注入的一维电子气GaN基HEMT器件及制备方法
CN103400856B (zh) * 2013-07-04 2016-03-02 西安电子科技大学 选区外延的一维电子气GaN基HEMT器件及制备方法
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
JP6299117B2 (ja) * 2013-08-30 2018-03-28 三菱電機株式会社 窒化物半導体デバイスの製造方法、バーンイン装置
CN103618003B (zh) * 2013-11-18 2017-04-12 石以瑄 具有改良栅极的高电子迁移率晶体管
JP6135487B2 (ja) 2013-12-09 2017-05-31 富士通株式会社 半導体装置及び半導体装置の製造方法
US10276712B2 (en) 2014-05-29 2019-04-30 Hrl Laboratories, Llc III-nitride field-effect transistor with dual gates
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
JP6292104B2 (ja) * 2014-11-17 2018-03-14 三菱電機株式会社 窒化物半導体装置の製造方法
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
CN104900747B (zh) * 2015-06-24 2017-03-22 成都海威华芯科技有限公司 基于GaN的光电集成器件及其制备方法、外延结构
US9812532B1 (en) 2015-08-28 2017-11-07 Hrl Laboratories, Llc III-nitride P-channel transistor
US9704705B2 (en) 2015-09-08 2017-07-11 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation via reaction with active species
US9627473B2 (en) 2015-09-08 2017-04-18 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation in III-nitride material semiconductor structures
US9806182B2 (en) 2015-09-08 2017-10-31 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using elemental diboride diffusion barrier regions
US10211294B2 (en) 2015-09-08 2019-02-19 Macom Technology Solutions Holdings, Inc. III-nitride semiconductor structures comprising low atomic mass species
US9773898B2 (en) 2015-09-08 2017-09-26 Macom Technology Solutions Holdings, Inc. III-nitride semiconductor structures comprising spatially patterned implanted species
US9673281B2 (en) 2015-09-08 2017-06-06 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions
US20170069721A1 (en) 2015-09-08 2017-03-09 M/A-Com Technology Solutions Holdings, Inc. Parasitic channel mitigation using silicon carbide diffusion barrier regions
US9799520B2 (en) 2015-09-08 2017-10-24 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation via back side implantation
WO2017087197A1 (en) 2015-11-19 2017-05-26 Hrl Laboratories, Llc Iii-nitride field-effect transistor with dual gates
CN108604597B (zh) 2016-01-15 2021-09-17 创世舫电子有限公司 具有al(1-x)sixo栅极绝缘体的增强模式iii-氮化物器件
US10128364B2 (en) * 2016-03-28 2018-11-13 Nxp Usa, Inc. Semiconductor devices with an enhanced resistivity region and methods of fabrication therefor
CN105679859B (zh) * 2016-04-20 2018-02-23 杭州电子科技大学 一种基于双异质结hemt的高增益x射线探测器
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
WO2017210323A1 (en) 2016-05-31 2017-12-07 Transphorm Inc. Iii-nitride devices including a graded depleting layer
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors
US11282950B2 (en) * 2017-05-31 2022-03-22 Mitsubishi Electric Corporation Method for manufacturing semiconductor device
CN107170671A (zh) * 2017-06-22 2017-09-15 广东省半导体产业技术研究院 一种基于离子注入的GaN功率器件及其制造方法
WO2019066975A1 (en) * 2017-09-29 2019-04-04 Intel Corporation GROUP III SILICON NITRIDE CONTROLLED RECTIFIER
WO2019066972A1 (en) * 2017-09-29 2019-04-04 Intel Corporation GROUP III NITRIDE SCHOTTKY DIODES
US11373995B2 (en) 2017-09-29 2022-06-28 Intel Corporation Group III-nitride antenna diode
US11038023B2 (en) 2018-07-19 2021-06-15 Macom Technology Solutions Holdings, Inc. III-nitride material semiconductor structures on conductive silicon substrates
EP3753052B1 (en) 2018-12-21 2021-07-28 ABB Power Grids Switzerland AG Silicon carbide power device with mos structure and stressor
US11075271B2 (en) 2019-10-14 2021-07-27 Cree, Inc. Stepped field plates with proximity to conduction channel and related fabrication methods
CN114975614A (zh) * 2021-02-24 2022-08-30 联华电子股份有限公司 高电子迁移率晶体管及其制作方法
US12015075B2 (en) 2021-05-20 2024-06-18 Macom Technology Solutions Holdings, Inc. Methods of manufacturing high electron mobility transistors having a modified interface region
US12446252B2 (en) 2021-05-20 2025-10-14 Macom Technology Solutions Holdings, Inc. Transistors including semiconductor surface modification and related fabrication methods
US12009417B2 (en) 2021-05-20 2024-06-11 Macom Technology Solutions Holdings, Inc. High electron mobility transistors having improved performance

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123226A (ja) * 1982-12-28 1984-07-17 Fujitsu Ltd 半導体装置の製造装置
US5799028A (en) 1996-07-18 1998-08-25 Sdl, Inc. Passivation and protection of a semiconductor surface
US5929467A (en) * 1996-12-04 1999-07-27 Sony Corporation Field effect transistor with nitride compound
JP3272259B2 (ja) * 1997-03-25 2002-04-08 株式会社東芝 半導体装置
JP3147036B2 (ja) * 1997-05-02 2001-03-19 日本電気株式会社 化合物半導体装置及びその製造方法
JPH10335637A (ja) * 1997-05-30 1998-12-18 Sony Corp ヘテロ接合電界効果トランジスタ
US6316820B1 (en) 1997-07-25 2001-11-13 Hughes Electronics Corporation Passivation layer and process for semiconductor devices
JPH11154774A (ja) * 1997-08-05 1999-06-08 Canon Inc 面発光半導体デバイスの製造方法、この方法によって製造された面発光半導体デバイス及びこのデバイスを用いた表示装置
JP3372470B2 (ja) * 1998-01-20 2003-02-04 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置
US6316793B1 (en) * 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
JP4465745B2 (ja) * 1999-07-23 2010-05-19 ソニー株式会社 半導体積層基板，半導体結晶基板および半導体素子ならびにそれらの製造方法
TW474024B (en) 1999-08-16 2002-01-21 Cornell Res Foundation Inc Passivation of GaN based FETs

Also Published As

Publication number Publication date
CN1419713A (zh) 2003-05-21
EP1261988B1 (en) 2011-09-21
CA2399547A1 (en) 2001-08-09
KR20020082846A (ko) 2002-10-31
CN1260827C (zh) 2006-06-21
US6586781B2 (en) 2003-07-01
MY130244A (en) 2007-06-29
US20010023964A1 (en) 2001-09-27
EP1261988A1 (en) 2002-12-04
AU2001233253A1 (en) 2001-08-14
KR100710654B1 (ko) 2007-04-24
WO2001057929A1 (en) 2001-08-09
JP2004517461A (ja) 2004-06-10
CA2399547C (en) 2011-04-19
ATE525751T1 (de) 2011-10-15

Similar Documents

Publication Publication Date Title
JP5313424B2 (ja) トラッピング（ｔｒａｐｐｉｎｇ）を低減させたＩＩＩ族窒化物ベースの電界効果トランジスタ（ＦＥＴ）およびトランジスタの製造方法
US7230284B2 (en) Insulating gate AlGaN/GaN HEMT
JP5501618B2 (ja) 高電子移動トランジスタ（ｈｅｍｔ）、半導体デバイスおよびその製造方法
JP7677742B2 (ja) エンハンスメント型金属－絶縁体－半導体高電子移動度トランジスタ
US20110140123A1 (en) Nitride-Based Transistors With a Protective Layer and a Low-Damage Recess
JP7668078B2 (ja) 構造フィーチャを共有する第ｉｉｉ族のｈｅｍｔおよびコンデンサ
US7122451B2 (en) Method for fabricating a semiconductor device including exposing a group III-V semiconductor to an ammonia plasma
JP2005203544A (ja) 窒化物半導体装置とその製造方法
US8558242B2 (en) Vertical GaN-based metal insulator semiconductor FET
JP2003037118A (ja) 電界効果トランジスタ
JP2006100455A (ja) 窒化物半導体装置及びその製造方法
TW523927B (en) Group III nitride based fets and hemts with reduced trapping and method for producing the same
US20250240997A1 (en) Improved hemt device, in particular depletion mode device, and manufacturing process thereof
US20250351399A1 (en) Method of forming semiconductor device
KR100985470B1 (ko) 고 전자 이동도 트랜지스터 및 그 제조방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20021015

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20021108

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20030925

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20030925

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040119

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040723

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080131

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20080131

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20101006

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20101019

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110131

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110209

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110509

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110516

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110809

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110915

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120116

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120224

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20120229

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120329

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120628

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20120720

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130521

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130704

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5313424

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term