JP2003163221A5 - - Google Patents
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- Publication number
- JP2003163221A5 JP2003163221A5 JP2001363486A JP2001363486A JP2003163221A5 JP 2003163221 A5 JP2003163221 A5 JP 2003163221A5 JP 2001363486 A JP2001363486 A JP 2001363486A JP 2001363486 A JP2001363486 A JP 2001363486A JP 2003163221 A5 JP2003163221 A5 JP 2003163221A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- crystallization
- semiconductor film
- amorphous semiconductor
- crystallized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 32
- 238000002425 crystallisation Methods 0.000 claims 28
- 230000008025 crystallization Effects 0.000 claims 28
- 239000010408 film Substances 0.000 claims 20
- 239000002184 metal Substances 0.000 claims 9
- 229910052751 metal Inorganic materials 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000000034 method Methods 0.000 claims 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 5
- 238000010438 heat treatment Methods 0.000 claims 5
- 230000001678 irradiating effect Effects 0.000 claims 5
- 229910052698 phosphorus Inorganic materials 0.000 claims 5
- 239000011574 phosphorus Substances 0.000 claims 5
- 230000015572 biosynthetic process Effects 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 4
- 230000010355 oscillation Effects 0.000 claims 3
- 238000000059 patterning Methods 0.000 claims 2
- 230000001737 promoting effect Effects 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001363486A JP2003163221A (ja) | 2001-11-28 | 2001-11-28 | 半導体装置の作製方法 |
| US10/305,264 US6890840B2 (en) | 2001-11-28 | 2002-11-27 | Method of manufacturing a semiconductor device, utilizing a laser beam for crystallization |
| US11/120,992 US7449376B2 (en) | 2001-11-28 | 2005-05-04 | Method of manufacturing a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001363486A JP2003163221A (ja) | 2001-11-28 | 2001-11-28 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008030523A Division JP4818288B2 (ja) | 2008-02-12 | 2008-02-12 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003163221A JP2003163221A (ja) | 2003-06-06 |
| JP2003163221A5 true JP2003163221A5 (OSRAM) | 2005-06-30 |
Family
ID=19173816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001363486A Withdrawn JP2003163221A (ja) | 2001-11-28 | 2001-11-28 | 半導体装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US6890840B2 (OSRAM) |
| JP (1) | JP2003163221A (OSRAM) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0869967A (ja) * | 1994-08-26 | 1996-03-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| KR100501700B1 (ko) * | 2002-12-16 | 2005-07-18 | 삼성에스디아이 주식회사 | 엘디디/오프셋 구조를 구비하고 있는 박막 트랜지스터 |
| US7348222B2 (en) * | 2003-06-30 | 2008-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device |
| US7358165B2 (en) * | 2003-07-31 | 2008-04-15 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing semiconductor device |
| US7247527B2 (en) * | 2003-07-31 | 2007-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device, and laser irradiation apparatus |
| JP4464715B2 (ja) * | 2004-03-09 | 2010-05-19 | 三菱電機株式会社 | 液晶表示装置およびこれらの製造方法 |
| JP4063266B2 (ja) * | 2004-09-30 | 2008-03-19 | セイコーエプソン株式会社 | 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器 |
| KR100807559B1 (ko) * | 2006-11-10 | 2008-02-28 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그의 제조 방법 |
| US8441018B2 (en) | 2007-08-16 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Direct bandgap substrates and methods of making and using |
| US8633491B2 (en) * | 2009-08-20 | 2014-01-21 | Panasonic Liquid Crystal Display Co., Ltd. | Display device and manufacturing method thereof |
| US9299390B2 (en) | 2011-09-01 | 2016-03-29 | HangZhou HaiCun Informationa Technology Co., Ltd. | Discrete three-dimensional vertical memory comprising off-die voltage generator |
| US9305605B2 (en) | 2011-09-01 | 2016-04-05 | Chengdu Haicun Ip Technology Llc | Discrete three-dimensional vertical memory |
| US9305604B2 (en) | 2011-09-01 | 2016-04-05 | HangZhou HaiCun Information Technology Co., Ltd. | Discrete three-dimensional vertical memory comprising off-die address/data-translator |
| US9558842B2 (en) | 2011-09-01 | 2017-01-31 | HangZhou HaiCun Information Technology Co., Ltd. | Discrete three-dimensional one-time-programmable memory |
| US9396764B2 (en) | 2011-09-01 | 2016-07-19 | HangZhou HaiCun Information Technology Co., Ltd. | Discrete three-dimensional memory |
| US9123393B2 (en) | 2011-09-01 | 2015-09-01 | HangZhou KiCun nformation Technology Co. Ltd. | Discrete three-dimensional vertical memory |
| US9508395B2 (en) | 2011-09-01 | 2016-11-29 | HangZhou HaiCun Information Technology Co., Ltd. | Three-dimensional one-time-programmable memory comprising off-die read/write-voltage generator |
| US9666300B2 (en) | 2011-09-01 | 2017-05-30 | XiaMen HaiCun IP Technology LLC | Three-dimensional one-time-programmable memory comprising off-die address/data-translator |
| US9559082B2 (en) | 2011-09-01 | 2017-01-31 | HangZhou HaiCun Information Technology Co., Ltd. | Three-dimensional vertical memory comprising dice with different interconnect levels |
| US9001555B2 (en) | 2012-03-30 | 2015-04-07 | Chengdu Haicun Ip Technology Llc | Small-grain three-dimensional memory |
| US9065009B2 (en) | 2012-04-10 | 2015-06-23 | First Solar, Inc. | Apparatus and method for forming a transparent conductive oxide layer over a substrate using a laser |
| US9293509B2 (en) | 2013-03-20 | 2016-03-22 | HangZhou HaiCun Information Technology Co., Ltd. | Small-grain three-dimensional memory |
| JP2017151443A (ja) * | 2017-03-15 | 2017-08-31 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| JP2019049748A (ja) * | 2018-11-28 | 2019-03-28 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
Family Cites Families (71)
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|---|---|---|---|---|
| US4341569A (en) * | 1979-07-24 | 1982-07-27 | Hughes Aircraft Company | Semiconductor on insulator laser process |
| US5091334A (en) * | 1980-03-03 | 1992-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JPS59169125A (ja) * | 1983-03-16 | 1984-09-25 | Ushio Inc | 半導体ウエハ−の加熱方法 |
| JPH0693509B2 (ja) * | 1983-08-26 | 1994-11-16 | シャープ株式会社 | 薄膜トランジスタ |
| JPS60186066A (ja) | 1984-03-05 | 1985-09-21 | Semiconductor Energy Lab Co Ltd | 絶縁ゲイト型電界効果半導体装置およびその作製方法 |
| US4727044A (en) * | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
| EP0211634B1 (en) * | 1985-08-02 | 1994-03-23 | Sel Semiconductor Energy Laboratory Co., Ltd. | Method and apparatus for manufacturing semiconductor devices |
| DE3682021D1 (de) * | 1985-10-23 | 1991-11-21 | Hitachi Ltd | Polysilizium-mos-transistor und verfahren zu seiner herstellung. |
| JP2709591B2 (ja) | 1986-08-27 | 1998-02-04 | セイコーインスツルメンツ株式会社 | 再結晶半導体薄膜の製造方法 |
| JPS63142807A (ja) | 1986-12-05 | 1988-06-15 | Nec Corp | 半導体装置の製造方法 |
| JP2751237B2 (ja) * | 1988-09-07 | 1998-05-18 | ソニー株式会社 | 集積回路装置及び集積回路装置の製造方法 |
| JP2707654B2 (ja) | 1988-11-22 | 1998-02-04 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
| JPH02140915A (ja) | 1988-11-22 | 1990-05-30 | Seiko Epson Corp | 半導体装置の製造方法 |
| JPH02208635A (ja) | 1989-02-08 | 1990-08-20 | Seiko Epson Corp | 半導体装置 |
| JPH02222564A (ja) | 1989-02-23 | 1990-09-05 | Toto Ltd | チップキャリヤ |
| DE69033153T2 (de) * | 1989-03-31 | 1999-11-11 | Canon K.K., Tokio/Tokyo | Verfahren zur Herstellung einer Halbleiterdünnschicht und damit hergestellte Halbleiterdünnschicht |
| US5278093A (en) * | 1989-09-23 | 1994-01-11 | Canon Kabushiki Kaisha | Method for forming semiconductor thin film |
| US5147826A (en) * | 1990-08-06 | 1992-09-15 | The Pennsylvania Research Corporation | Low temperature crystallization and pattering of amorphous silicon films |
| JP2923016B2 (ja) | 1990-09-17 | 1999-07-26 | 株式会社日立製作所 | 薄膜半導体の製造方法及びその装置 |
| JPH04133313A (ja) * | 1990-09-25 | 1992-05-07 | Semiconductor Energy Lab Co Ltd | 半導体作製方法 |
| US5156994A (en) * | 1990-12-21 | 1992-10-20 | Texas Instruments Incorporated | Local interconnect method and structure |
| JP2794678B2 (ja) * | 1991-08-26 | 1998-09-10 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
| JPH0824104B2 (ja) * | 1991-03-18 | 1996-03-06 | 株式会社半導体エネルギー研究所 | 半導体材料およびその作製方法 |
| JPH05182923A (ja) * | 1991-05-28 | 1993-07-23 | Semiconductor Energy Lab Co Ltd | レーザーアニール方法 |
| JP3244518B2 (ja) | 1991-07-30 | 2002-01-07 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法 |
| JP3089718B2 (ja) | 1991-08-06 | 2000-09-18 | 日本電気株式会社 | 駆動回路一体型アクティブマトリクスアレイおよびその製造方法 |
| JPH05142554A (ja) * | 1991-11-25 | 1993-06-11 | Matsushita Electric Ind Co Ltd | アクテイブマトリクス基板 |
| JP3019885B2 (ja) * | 1991-11-25 | 2000-03-13 | カシオ計算機株式会社 | 電界効果型薄膜トランジスタの製造方法 |
| JP2666103B2 (ja) * | 1992-06-03 | 1997-10-22 | カシオ計算機株式会社 | 薄膜半導体装置 |
| US5252502A (en) * | 1992-08-03 | 1993-10-12 | Texas Instruments Incorporated | Method of making MOS VLSI semiconductor device with metal gate |
| TW226478B (en) * | 1992-12-04 | 1994-07-11 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for manufacturing the same |
| US5604360A (en) * | 1992-12-04 | 1997-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor |
| JPH06296023A (ja) * | 1993-02-10 | 1994-10-21 | Semiconductor Energy Lab Co Ltd | 薄膜状半導体装置およびその作製方法 |
| US5639698A (en) * | 1993-02-15 | 1997-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
| US5275851A (en) * | 1993-03-03 | 1994-01-04 | The Penn State Research Foundation | Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates |
| TW241377B (OSRAM) * | 1993-03-12 | 1995-02-21 | Semiconductor Energy Res Co Ltd | |
| JP3431682B2 (ja) | 1993-03-12 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体回路の作製方法 |
| CN1542929B (zh) * | 1993-03-12 | 2012-05-30 | 株式会社半导体能源研究所 | 半导体器件的制造方法 |
| JP3193803B2 (ja) * | 1993-03-12 | 2001-07-30 | 株式会社半導体エネルギー研究所 | 半導体素子の作製方法 |
| US5624851A (en) * | 1993-03-12 | 1997-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallized and another portion is laser crystallized |
| TW278219B (OSRAM) * | 1993-03-12 | 1996-06-11 | Handotai Energy Kenkyusho Kk | |
| US5501989A (en) * | 1993-03-22 | 1996-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer |
| US5481121A (en) * | 1993-05-26 | 1996-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having improved crystal orientation |
| US5488000A (en) * | 1993-06-22 | 1996-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer |
| US5529937A (en) * | 1993-07-27 | 1996-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating thin film transistor |
| US5663077A (en) * | 1993-07-27 | 1997-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films |
| US5492843A (en) * | 1993-07-31 | 1996-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device and method of processing substrate |
| JP2975973B2 (ja) * | 1993-08-10 | 1999-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP2762215B2 (ja) * | 1993-08-12 | 1998-06-04 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタおよび半導体装置の作製方法 |
| JP2814049B2 (ja) * | 1993-08-27 | 1998-10-22 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| TW264575B (OSRAM) * | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
| US5612250A (en) * | 1993-12-01 | 1997-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device using a catalyst |
| JP3562590B2 (ja) * | 1993-12-01 | 2004-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法 |
| JP2860869B2 (ja) * | 1993-12-02 | 1999-02-24 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| US5654203A (en) * | 1993-12-02 | 1997-08-05 | Semiconductor Energy Laboratory, Co., Ltd. | Method for manufacturing a thin film transistor using catalyst elements to promote crystallization |
| KR100319332B1 (ko) * | 1993-12-22 | 2002-04-22 | 야마자끼 순페이 | 반도체장치및전자광학장치 |
| JP3378078B2 (ja) * | 1994-02-23 | 2003-02-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH07335906A (ja) * | 1994-06-14 | 1995-12-22 | Semiconductor Energy Lab Co Ltd | 薄膜状半導体装置およびその作製方法 |
| JP3072000B2 (ja) * | 1994-06-23 | 2000-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3442500B2 (ja) * | 1994-08-31 | 2003-09-02 | 株式会社半導体エネルギー研究所 | 半導体回路の作製方法 |
| JP3464287B2 (ja) | 1994-09-05 | 2003-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5712191A (en) * | 1994-09-16 | 1998-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
| JP3942651B2 (ja) * | 1994-10-07 | 2007-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3486240B2 (ja) * | 1994-10-20 | 2004-01-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TW355845B (en) * | 1995-03-27 | 1999-04-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device and a method of manufacturing the same |
| TW319912B (OSRAM) * | 1995-12-15 | 1997-11-11 | Handotai Energy Kenkyusho Kk | |
| JP4190600B2 (ja) | 1997-01-28 | 2008-12-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6355509B1 (en) | 1997-01-28 | 2002-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication |
| JP3942683B2 (ja) | 1997-02-12 | 2007-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法 |
| JP3844552B2 (ja) | 1997-02-26 | 2006-11-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3544280B2 (ja) | 1997-03-27 | 2004-07-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2001
- 2001-11-28 JP JP2001363486A patent/JP2003163221A/ja not_active Withdrawn
-
2002
- 2002-11-27 US US10/305,264 patent/US6890840B2/en not_active Expired - Fee Related
-
2005
- 2005-05-04 US US11/120,992 patent/US7449376B2/en not_active Expired - Fee Related
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