JP2003115457A5 - - Google Patents
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- Publication number
- JP2003115457A5 JP2003115457A5 JP2002199191A JP2002199191A JP2003115457A5 JP 2003115457 A5 JP2003115457 A5 JP 2003115457A5 JP 2002199191 A JP2002199191 A JP 2002199191A JP 2002199191 A JP2002199191 A JP 2002199191A JP 2003115457 A5 JP2003115457 A5 JP 2003115457A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor film
- crystalline semiconductor
- crystalline
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 142
- 238000000034 method Methods 0.000 claims 42
- 238000004519 manufacturing process Methods 0.000 claims 25
- 238000002425 crystallisation Methods 0.000 claims 20
- 230000008025 crystallization Effects 0.000 claims 20
- 238000005247 gettering Methods 0.000 claims 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 14
- 229910052710 silicon Inorganic materials 0.000 claims 14
- 239000010703 silicon Substances 0.000 claims 14
- 238000010438 heat treatment Methods 0.000 claims 12
- 229910052732 germanium Inorganic materials 0.000 claims 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 11
- 239000011261 inert gas Substances 0.000 claims 8
- 230000001678 irradiating effect Effects 0.000 claims 8
- 238000005530 etching Methods 0.000 claims 7
- 239000012298 atmosphere Substances 0.000 claims 6
- 230000001590 oxidative effect Effects 0.000 claims 5
- 239000003054 catalyst Substances 0.000 claims 4
- 230000003197 catalytic effect Effects 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 3
- 238000005498 polishing Methods 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- 238000001039 wet etching Methods 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000000243 solution Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000012299 nitrogen atmosphere Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002199191A JP4267266B2 (ja) | 2001-07-10 | 2002-07-08 | 半導体装置の作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-209877 | 2001-07-10 | ||
| JP2001209877 | 2001-07-10 | ||
| JP2001-234302 | 2001-08-01 | ||
| JP2001234302 | 2001-08-01 | ||
| JP2002199191A JP4267266B2 (ja) | 2001-07-10 | 2002-07-08 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003115457A JP2003115457A (ja) | 2003-04-18 |
| JP2003115457A5 true JP2003115457A5 (enExample) | 2005-09-15 |
| JP4267266B2 JP4267266B2 (ja) | 2009-05-27 |
Family
ID=26618470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002199191A Expired - Fee Related JP4267266B2 (ja) | 2001-07-10 | 2002-07-08 | 半導体装置の作製方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6828179B2 (enExample) |
| JP (1) | JP4267266B2 (enExample) |
| KR (1) | KR100889509B1 (enExample) |
| CN (1) | CN1294619C (enExample) |
| TW (1) | TW579602B (enExample) |
Families Citing this family (73)
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| US6624051B1 (en) * | 2000-08-25 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor thin film and semiconductor device |
| JP4045731B2 (ja) * | 2000-09-25 | 2008-02-13 | 株式会社日立製作所 | 薄膜半導体素子の製造方法 |
| US6815278B1 (en) * | 2003-08-25 | 2004-11-09 | International Business Machines Corporation | Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insulator with hybrid crystal orientations |
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2002
- 2002-07-08 JP JP2002199191A patent/JP4267266B2/ja not_active Expired - Fee Related
- 2002-07-09 TW TW091115218A patent/TW579602B/zh not_active IP Right Cessation
- 2002-07-09 US US10/190,550 patent/US6828179B2/en not_active Expired - Fee Related
- 2002-07-10 KR KR1020020039925A patent/KR100889509B1/ko not_active Expired - Fee Related
- 2002-07-10 CN CNB021409307A patent/CN1294619C/zh not_active Expired - Fee Related
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2004
- 2004-04-30 US US10/835,077 patent/US7196400B2/en not_active Expired - Fee Related
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