JP2000003875A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000003875A5 JP2000003875A5 JP1998165447A JP16544798A JP2000003875A5 JP 2000003875 A5 JP2000003875 A5 JP 2000003875A5 JP 1998165447 A JP1998165447 A JP 1998165447A JP 16544798 A JP16544798 A JP 16544798A JP 2000003875 A5 JP2000003875 A5 JP 2000003875A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon film
- amorphous silicon
- semiconductor device
- film
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 37
- 239000004065 semiconductor Substances 0.000 claims 22
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 14
- 229910052710 silicon Inorganic materials 0.000 claims 14
- 239000010703 silicon Substances 0.000 claims 14
- 230000003197 catalytic effect Effects 0.000 claims 12
- 238000002425 crystallisation Methods 0.000 claims 12
- 230000008025 crystallization Effects 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 11
- 238000000034 method Methods 0.000 claims 10
- 230000001678 irradiating effect Effects 0.000 claims 9
- 239000013078 crystal Substances 0.000 claims 8
- 239000003054 catalyst Substances 0.000 claims 6
- 230000001737 promoting effect Effects 0.000 claims 5
- 150000001875 compounds Chemical class 0.000 claims 3
- 239000002904 solvent Substances 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052762 osmium Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 238000005247 gettering Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 230000010363 phase shift Effects 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 230000000717 retained effect Effects 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10165447A JP2000003875A (ja) | 1998-06-12 | 1998-06-12 | 半導体装置およびその作製方法 |
| US09/327,469 US7001829B1 (en) | 1998-06-12 | 1999-06-08 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10165447A JP2000003875A (ja) | 1998-06-12 | 1998-06-12 | 半導体装置およびその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000003875A JP2000003875A (ja) | 2000-01-07 |
| JP2000003875A5 true JP2000003875A5 (enExample) | 2005-08-18 |
Family
ID=15812609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10165447A Withdrawn JP2000003875A (ja) | 1998-06-12 | 1998-06-12 | 半導体装置およびその作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7001829B1 (enExample) |
| JP (1) | JP2000003875A (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0869967A (ja) * | 1994-08-26 | 1996-03-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP4841740B2 (ja) * | 2000-04-26 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4968996B2 (ja) * | 2000-09-01 | 2012-07-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR100662492B1 (ko) * | 2001-07-10 | 2007-01-02 | 엘지.필립스 엘시디 주식회사 | 비정질막 결정화 방법 및 이를 적용한 액정표시소자의제조방법 |
| JP2003204067A (ja) | 2001-12-28 | 2003-07-18 | Semiconductor Energy Lab Co Ltd | 表示装置およびそれを用いた電子機器 |
| EP1569263B1 (de) * | 2004-02-27 | 2011-11-23 | OSRAM Opto Semiconductors GmbH | Verfahren zum Verbinden zweier Wafer |
| JP5294862B2 (ja) | 2005-09-14 | 2013-09-18 | マトソン テクノロジー、インコーポレイテッド | 繰返し可能な熱処理方法および機器 |
| CN1331975C (zh) * | 2005-12-08 | 2007-08-15 | 南开大学 | 纳米晶铁锗颗粒薄膜磁敏材料 |
| US7732351B2 (en) * | 2006-09-21 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device and laser processing apparatus |
| WO2008131513A1 (en) | 2007-05-01 | 2008-11-06 | Mattson Technology Canada, Inc. | Irradiance pulse heat-treating methods and apparatus |
| TWI334046B (en) * | 2007-07-10 | 2010-12-01 | Au Optronics Corp | Color filterless liquid crystal display device |
| KR101329352B1 (ko) * | 2007-10-17 | 2013-11-13 | 삼성전자주식회사 | 반도체 장치의 제조방법 |
| JP5503876B2 (ja) * | 2008-01-24 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体基板の製造方法 |
| WO2012048419A1 (en) | 2010-10-15 | 2012-04-19 | Mattson Technology Canada, Inc. | Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed |
| CN109524476A (zh) * | 2018-12-07 | 2019-03-26 | 京东方科技集团股份有限公司 | 氧化物薄膜晶体管的制备方法及阵列基板的制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3065825B2 (ja) | 1992-10-21 | 2000-07-17 | 株式会社半導体エネルギー研究所 | レーザー処理方法 |
| TW241377B (enExample) | 1993-03-12 | 1995-02-21 | Semiconductor Energy Res Co Ltd | |
| KR100355938B1 (ko) * | 1993-05-26 | 2002-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치제작방법 |
| JP3227980B2 (ja) | 1994-02-23 | 2001-11-12 | ソニー株式会社 | 多結晶シリコン薄膜形成方法およびｍｏｓトランジスタのチャネル形成方法 |
| US5529951A (en) | 1993-11-02 | 1996-06-25 | Sony Corporation | Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation |
| JP2759415B2 (ja) | 1993-11-05 | 1998-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW299897U (en) | 1993-11-05 | 1997-03-01 | Semiconductor Energy Lab | A semiconductor integrated circuit |
| JP3190517B2 (ja) | 1994-05-13 | 2001-07-23 | 株式会社半導体エネルギー研究所 | 半導体の作製方法 |
| TW406861U (en) | 1994-07-28 | 2000-09-21 | Semiconductor Energy Lab | Laser processing system |
| JP3729955B2 (ja) | 1996-01-19 | 2005-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3544280B2 (ja) | 1997-03-27 | 2004-07-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
1998
- 1998-06-12 JP JP10165447A patent/JP2000003875A/ja not_active Withdrawn
-
1999
- 1999-06-08 US US09/327,469 patent/US7001829B1/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI402989B (zh) | 形成多晶矽薄膜之方法及使用該方法以製造薄膜電晶體之方法 | |
| JP2003059831A5 (enExample) | ||
| JP2003115457A5 (enExample) | ||
| JPH09312260A5 (enExample) | ||
| JP3658213B2 (ja) | 半導体装置の製造方法 | |
| JP3844566B2 (ja) | 半導体装置の作製方法 | |
| JPH1187243A5 (enExample) | ||
| JP2003124114A5 (enExample) | ||
| JP2003203918A5 (enExample) | ||
| JP3389022B2 (ja) | 半導体装置 | |
| JP2010123758A (ja) | 薄膜デバイス及びその製造方法 | |
| JP2003197521A5 (enExample) | ||
| JPH1140499A (ja) | 半導体装置及びその作製方法 | |
| JP3522441B2 (ja) | 半導体装置 | |
| JP2001223174A (ja) | 半導体材料をドープする方法 | |
| JP2003163221A5 (enExample) | ||
| KR960030318A (ko) | 반도체 장치와 그의 제조 방법 | |
| JPH07307286A (ja) | 半導体の作製方法 | |
| JP2000260731A5 (enExample) | ||
| JP2006100661A5 (enExample) | ||
| CN110277311B (zh) | 提高GaN欧姆接触性能的方法、欧姆接触结构及应用 | |
| JP5339322B2 (ja) | レーザによるシリコン結晶成長方法 | |
| JP3048829B2 (ja) | 半導体装置の製造方法 | |
| JP2000114173A5 (enExample) | ||
| JP2007281465A (ja) | 多結晶膜の形成方法 |