JP2000091570A5 - - Google Patents
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- Publication number
- JP2000091570A5 JP2000091570A5 JP1998257949A JP25794998A JP2000091570A5 JP 2000091570 A5 JP2000091570 A5 JP 2000091570A5 JP 1998257949 A JP1998257949 A JP 1998257949A JP 25794998 A JP25794998 A JP 25794998A JP 2000091570 A5 JP2000091570 A5 JP 2000091570A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- semiconductor
- semiconductor device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 31
- 239000010409 thin film Substances 0.000 claims 17
- 238000004519 manufacturing process Methods 0.000 claims 10
- 238000000034 method Methods 0.000 claims 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- 239000010408 film Substances 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 4
- 230000003647 oxidation Effects 0.000 claims 4
- 238000007254 oxidation reaction Methods 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 230000001590 oxidative effect Effects 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 239000002253 acid Substances 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 229910052789 astatine Inorganic materials 0.000 claims 1
- RYXHOMYVWAEKHL-UHFFFAOYSA-N astatine atom Chemical compound [At] RYXHOMYVWAEKHL-UHFFFAOYSA-N 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 239000010419 fine particle Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000007790 solid phase Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25794998A JP4204671B2 (ja) | 1998-09-11 | 1998-09-11 | 半導体装置の製造方法 |
| US09/243,480 US6228728B1 (en) | 1998-09-11 | 1999-02-03 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25794998A JP4204671B2 (ja) | 1998-09-11 | 1998-09-11 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000091570A JP2000091570A (ja) | 2000-03-31 |
| JP2000091570A5 true JP2000091570A5 (enExample) | 2005-09-29 |
| JP4204671B2 JP4204671B2 (ja) | 2009-01-07 |
Family
ID=17313464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25794998A Expired - Fee Related JP4204671B2 (ja) | 1998-09-11 | 1998-09-11 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6228728B1 (enExample) |
| JP (1) | JP4204671B2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6368963B1 (en) * | 2000-09-12 | 2002-04-09 | Advanced Micro Devices, Inc. | Passivation of semiconductor device surfaces using an iodine/ethanol solution |
| US6555880B2 (en) * | 2001-06-07 | 2003-04-29 | International Business Machines Corporation | Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby |
| TWI229917B (en) * | 2003-09-09 | 2005-03-21 | Nanya Technology Corp | Interconnect process and method for removing silicide |
| US7166528B2 (en) * | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
| US7056796B2 (en) * | 2003-12-03 | 2006-06-06 | United Microelectronics Corp. | Method for fabricating silicide by heating an epitaxial layer and a metal layer formed thereon |
| US7560352B2 (en) * | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
| US7682940B2 (en) * | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
| US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
| KR100638988B1 (ko) * | 2004-12-23 | 2006-10-26 | 동부일렉트로닉스 주식회사 | 에피택셜 공정을 이용한 반도체 소자 및 그 평탄화 형성방법 |
| KR100640354B1 (ko) | 2004-12-23 | 2006-10-31 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
| JP4274566B2 (ja) * | 2005-04-25 | 2009-06-10 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
| US7674337B2 (en) * | 2006-04-07 | 2010-03-09 | Applied Materials, Inc. | Gas manifolds for use during epitaxial film formation |
| US8029620B2 (en) * | 2006-07-31 | 2011-10-04 | Applied Materials, Inc. | Methods of forming carbon-containing silicon epitaxial layers |
| CN101496150B (zh) * | 2006-07-31 | 2012-07-18 | 应用材料公司 | 控制外延层形成期间形态的方法 |
| JP2019075513A (ja) | 2017-10-19 | 2019-05-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2513287B2 (ja) | 1988-11-24 | 1996-07-03 | 日本電気株式会社 | 積層型メモリセルの製造方法 |
| JP3042444B2 (ja) * | 1996-12-27 | 2000-05-15 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5970352A (en) * | 1998-04-23 | 1999-10-19 | Kabushiki Kaisha Toshiba | Field effect transistor having elevated source and drain regions and methods for manufacturing the same |
-
1998
- 1998-09-11 JP JP25794998A patent/JP4204671B2/ja not_active Expired - Fee Related
-
1999
- 1999-02-03 US US09/243,480 patent/US6228728B1/en not_active Expired - Fee Related
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