CN102217031A - 基底处理方法、基底和用于实施该方法的处理装置 - Google Patents

基底处理方法、基底和用于实施该方法的处理装置 Download PDF

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CN102217031A
CN102217031A CN2009801453646A CN200980145364A CN102217031A CN 102217031 A CN102217031 A CN 102217031A CN 2009801453646 A CN2009801453646 A CN 2009801453646A CN 200980145364 A CN200980145364 A CN 200980145364A CN 102217031 A CN102217031 A CN 102217031A
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Abstract

在一种用于处理由硅构成的太阳能电池的基底（13）的方法中，在多次蚀刻之后，利用DI水来清洁（18）基底。接下来，在干燥站（22、25）中干燥和加热基底（13）。然后在氧化站（30）中用带有臭氧成分的氧化气体（34）来氧化已加热的基底（13）。

Description

基底处理方法、基底和用于实施该方法的处理装置
应用领域和背景技术
本发明涉及一种根据权利要求1的前序部分的用于处理基底特别是太阳能电池晶片的方法。本发明还涉及一种已采用这种方法处理的基底特别是太阳能电池晶片以及用于实施该方法的处理装置。
例如在制造传统的带有单晶或多晶的p-Si晶片的太阳能电池时，通常借助蚀刻过程对表面进行纹理化处理，用于改善其吸附特性。例如对于单晶硅来说，这种蚀刻过程利用氢氧化钠溶液或苛性钾溶液与异丙醇的混合物来进行。多晶硅利用氢氟酸和硝酸的溶液来蚀刻。随后进行其它蚀刻-清洁步骤。用于在锯割基底之后消除锯割损伤的蚀刻和用于清洁的标准过程规定，首先用DI水进行清洁，然后用前述溶液进行纹理化处理和锯割损伤蚀刻。之后又利用DI水进行清洁，随后进行KOH蚀刻或NaOH蚀刻，以便去除可能存在的由多孔硅和SiN复合物构成的薄层。之后又利用DI水进行清洁，随后进行HCl蚀刻，用于中和并去除金属残余痕迹。随后进行HF蚀刻，再次利用DI水进行清洁，随后进行干燥。然后使得硅晶片表面为后续的扩散过程做好准备。
在扩散过程中，由于磷扩散到约0.5μm的深度而在硅中产生pn结。然后，pn结在太阳能电池的工作中将通过光形成的载流子分开。为了产生这种pn结，在炉中将晶片加热到约800℃~950℃，其中存在磷源。在这种情况下，磷渗入到硅表面中，从而产生掺杂有磷的层。该层是反向导通的，这与正向导通的掺杂硼的基极相反。在该过程中，在表面上产生磷玻璃，在后续步骤中利用HF酸进行蚀刻来去除这种磷玻璃。接下来敷设整整80nm厚的通常由SiN:H构成的层，用于减少反应和钝化硅表面。最后，采用网印等方法在正面和背面上敷设金属触点。然而这里的缺点是，H2O分子会渗入到SiO2结构中，因而得到在质量上并非最佳的氧化物。对这种钝化表面的载流子寿命的检测表明，例如相比于以热方式制得的氧化物，品质显著恶化。
目的和实现方案
本发明的目的在于，提出开头部分所述的方法及其应用和以此处理的太阳能电池和相应的处理装置，借此能避免现有技术的问题，特别是改善基底尤其是太阳能电池晶片的质量。
采用具有权利要求1的特征的方法、具有权利要求7的特征的应用、具有权利要求8的特征的太阳能电池晶片和具有权利要求11的特征的处理装置，即可实现该目的。本发明的有利的以及优选的设计方式是其它权利要求的所述内容，下面对其予以详述。在这里，有些特征仅仅针对本发明的某个主要方面予以提及，但这些特征可以独立于该方面而适用于本发明的所有方面。权利要求所述内容明确地引用为说明书的内容。此外，本申请人的2008年9月15日的优先权申请DE 102008048540.3的内容明确地引用为本说明书的内容。
在该方法中，对基底进行多次蚀刻，其间使用水或DI水进行多个清洁步骤。根据本发明，最后（abschließend）对基底进行干燥和加热，以便尽可能地去除表面的水，用于干燥基底。接下来，利用至少含有少量臭氧的气体混合物，对基底或其表面进行氧化。由此可以在所谓的干式氧化中避免H2O分子会渗入到硅层中，这与以前的湿式氧化恰好相反。在此可以用受热的气体混合物进行干燥和加热。
在氧化或所谓的干式氧化时，最好能使用含有N2、O2或O3的气体混合物作为承载气体（Trägergas），例如也可以使用由多种这些化合物构成的混合物。
尽管原则上也可以在室温下进行干燥和加热，但最好在较高的温度进行加热，例如加热到至少50℃。特别是最好加热到至少100℃~150℃。
根据本发明的一种设计方案，在基底的干燥和加热步骤之前，还进行利用DI水的另一清洁步骤，即例如在后来的HF蚀刻之后。
该方法最好以在线（In-Line）方式实施，替代地以批处理方式实施。由此可实现较高的产量，且能高效地实施。
虽然上述方法可以用于多种目的。但特别有利的是，它用于加工太阳能电池或太阳能电池晶片的基底。前述在线方式或批处理方式恰好也适合于此，以便大量地进行加工。
采用本发明的方法处理过的太阳能电池晶片可以具有由硅构成的经过如此处理的层。替代地，它可以完全由硅材料构成。
本发明的用于基底的处理装置具有至少一个用于基底的蚀刻装置和至少一个利用水或DI水的清洁装置。此外，至少一个干燥站设置有加热机构，用于尽可能地很大程度上地干燥基底的表面和去除水，其中在干燥站之后设置有用于基底或基底表面的氧化站，并引入至少含有少量臭氧的气体混合物。处理装置确切地具体地构造有不同的装置和工作站，这可由前述方法步骤得知，且可据此适配调整。
这些和其它特征还可由权利要求书及说明书和附图得到，其中各个特征均可单独地或者多个地以分组合方式在本发明的某一实施方式中实现，且可在其它领域实现，以及有利地单独地形成能受保护的在此要求权利保护的设计方案。本申请划分成各个段落以及中间的小标题对其下的说明的适用性并不构成限制。
对实施例的详细说明
在图1中示意性地示出处理装置11，将对其本身予以详述，以及借此还将详述本发明的方法。
处理装置11被设置用于基底，其中的一个基底13被示出。该基底沿输送方向T移动，并来自蚀刻装置15，该蚀刻装置可以采用通常的方式来构造。基底13或者为明了起见未示出的前后相继的基底的横列在辊16上输送，其中辊16形成一种辊道。
经过蚀刻装置15之后，基底13移动通过冲洗站18。借助冲洗喷嘴19将DI水20从上面和下面喷淋到基底13上，用于冲洗或清洁基底的表面。这种冲洗站也可以布置在蚀刻装置15之前。
经过冲洗站18之后，基底13沿输送方向T移动通过第一干燥站22。该干燥站具有鼓风机23，此外还具有加热机构24。为此例如可以使用通常的电加热机构，或者也可以使用辐射式加热体，以及使用通常的鼓风机。利用鼓风作用，一方面将位于基底13的表面上的水去除或者沿着边缘将其去掉。利用加热机构24的作用还使得一部分水蒸发。加热还可以用于使得基底有利地为后续氧化做好准备。
在第一干燥站22之后是第二干燥站25，第二干燥站也具有鼓风机26和加热机构27。在此设置有两个干燥站，以便能使得装置11连续地运行，并确保基底13实际上也被干燥，必要时还被加热。它们也可以是相同的。
经过第二干燥站25之后，基底13移动通过闸机28而进入到氧化站30中。该氧化站具有腔室31，在该腔室中，在基底13或用于输送的辊16的上方设置有喷嘴33。借助喷嘴33将氧化气体34喷入到腔室31中，用于氧化基底13或其表面。然后借助闸机35将基底13从氧化站30中排出。
如前所述，可以在干燥站22和25处将基底13加热到至少50℃，甚至有利地加热到更高温度，例如加热到100℃~150℃。通过加热，不仅有利于干燥基底，亦即去除水分，而且为氧化做好准备，从而接下来可以使得表面例如为了磷扩散而最佳地钝化和做好准备。在干燥站处进行加热还可以实现接下来在装置中发生氧化，而无需自己的加热机构，通过加热还能改善氧化过程。在氧化站30中进行干燥氧化，还避免了H2O分子再次置于硅结构中，或者避免产生SiO2结构。也就是说，相比于按照本发明被干燥和加热氧化的基底，在检测载流子寿命时，置入H2O分子会导致品质（Wert）恶化。
如开头部分所述，氧化站30中的氧化气体34可以是氮气、氧气或臭氧。但在所有情况下都要至少含有少量最少部分的臭氧，因为它特别是由于其较高的反应性而非常适合于氧化。

Claims (12)

1.一种用于处理基底（13）特别是太阳能电池的方法，其中基底（13）至少在其外侧面上含有硅或者具有硅材料，其中在处理期间对基底进行多次蚀刻，其间利用水或DI水（20）进行多个清洁步骤，其特征在于，最后对基底（13）进行干燥和加热，以便尽可能地很大程度上地干燥表面并去除水，接下来利用至少含有少量臭氧的气体混合物（34）对基底（13）或基底表面进行氧化。
2.如权利要求1所述的方法，其特征在于，用受热的气体对基底（13）进行干燥和加热。
3.如权利要求1或2所述的方法，其特征在于，用于氧化的气体混合物（34）具有如下组的组分：N2、O2、O3。
4.如前述权利要求中任一项所述的方法，其特征在于，在干燥和加热的步骤期间，将基底（13）加热到至少50℃的温度，优选至少加热到100℃~150℃。
5.如前述权利要求中任一项所述的方法，其特征在于，直接在干燥和加热的步骤之前，用DI水（20）对基底（13）再清洁一次。
6.如前述权利要求中任一项所述的方法，其特征在于，它采用在线方式来实施。
7.根据前述权利要求中任一项的方法的用于处理太阳能电池的基底（13）或太阳能电池晶片的应用。
8.一种太阳能电池晶片（13），其特征在于，它已采用根据前述权利要求中任一项的方法被处理。
9.如权利要求8所述的太阳能电池晶片，其特征在于，它带有硅层。
10.如权利要求8所述的太阳能电池晶片，其特征在于，它由硅构成。
11.一种用于基底（13）特别是太阳能电池的处理装置，其中基底至少在其外侧面上含有硅或者具有硅材料，其中处理装置（11）具有至少一个用于基底（13）的蚀刻装置（15）和至少一个利用水或DI水（34）的清洁装置，其特征在于，至少一个干燥站（22、25）设置有加热机构（24、27），用于尽可能地很大程度上地干燥基底（13）的表面和去除水，其中在干燥站（22、25）之后设置有用于基底（13）或基底表面的氧化站（30），并引入至少含有少量臭氧的气体混合物（34）。
12.如权利要求11所述的处理装置，其特征在于，设置有两个干燥站（22、25）。
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