CN103361734A - 一种提高多晶硅产出效率的方法 - Google Patents
一种提高多晶硅产出效率的方法 Download PDFInfo
- Publication number
- CN103361734A CN103361734A CN2013102875713A CN201310287571A CN103361734A CN 103361734 A CN103361734 A CN 103361734A CN 2013102875713 A CN2013102875713 A CN 2013102875713A CN 201310287571 A CN201310287571 A CN 201310287571A CN 103361734 A CN103361734 A CN 103361734A
- Authority
- CN
- China
- Prior art keywords
- time length
- seconds
- scheduled time
- quasi
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 50
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 31
- 238000005224 laser annealing Methods 0.000 claims abstract description 60
- 238000004140 cleaning Methods 0.000 claims abstract description 54
- 238000001035 drying Methods 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229920005591 polysilicon Polymers 0.000 claims description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical group [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 238000002425 crystallisation Methods 0.000 claims description 6
- 230000008025 crystallization Effects 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 238000005984 hydrogenation reaction Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000002000 scavenging effect Effects 0.000 claims description 3
- 238000000137 annealing Methods 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 238000005406 washing Methods 0.000 abstract 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 238000007715 excimer laser crystallization Methods 0.000 description 3
- 238000005499 laser crystallization Methods 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 238000007634 remodeling Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
Images
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310287571.3A CN103361734B (zh) | 2013-07-09 | 2013-07-09 | 一种提高多晶硅产出效率的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310287571.3A CN103361734B (zh) | 2013-07-09 | 2013-07-09 | 一种提高多晶硅产出效率的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103361734A true CN103361734A (zh) | 2013-10-23 |
CN103361734B CN103361734B (zh) | 2015-11-25 |
Family
ID=49363957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310287571.3A Expired - Fee Related CN103361734B (zh) | 2013-07-09 | 2013-07-09 | 一种提高多晶硅产出效率的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103361734B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016033844A1 (zh) * | 2014-09-03 | 2016-03-10 | 深圳市华星光电技术有限公司 | 一种低温多晶硅薄膜的制备机构及方法 |
CN110590139A (zh) * | 2019-09-06 | 2019-12-20 | 中电九天智能科技有限公司 | 激光退火制程生产线优化方法 |
WO2020019470A1 (zh) * | 2018-07-25 | 2020-01-30 | 武汉华星光电技术有限公司 | 一种多晶硅薄膜和薄膜晶体管的制备方法 |
US10679851B2 (en) | 2018-07-25 | 2020-06-09 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Poly-silicon thin film and preparation method of thin film transistor |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02185018A (ja) * | 1989-01-11 | 1990-07-19 | Nec Corp | 半導体膜の形成方法 |
US5960323A (en) * | 1996-06-20 | 1999-09-28 | Sanyo Electric Co., Ltd. | Laser anneal method for a semiconductor device |
CN1354495A (zh) * | 2000-09-05 | 2002-06-19 | 索尼株式会社 | 半导体薄膜及其生产方法和设备、及生产单晶薄膜的方法 |
CN1501457A (zh) * | 2002-11-12 | 2004-06-02 | 统宝光电股份有限公司 | 利用准分子激光退火工艺制作多晶硅薄膜的方法 |
TW594884B (en) * | 2003-05-29 | 2004-06-21 | Univ Nat Chiao Tung | Laser re-crystallization method of low temperature polysilicon thin film transistor |
US20050000408A1 (en) * | 2003-07-04 | 2005-01-06 | Toppoly Optoelectronics Corp. | Process for forming polycrystalline silicon layer by laser crystallization |
US6881686B1 (en) * | 2003-11-13 | 2005-04-19 | Sharp Laboratories Of America, Inc. | Low-fluence irradiation for lateral crystallization enabled by a heating source |
CN101236898A (zh) * | 2007-02-02 | 2008-08-06 | 群康科技(深圳)有限公司 | 低温多晶硅薄膜制作方法 |
-
2013
- 2013-07-09 CN CN201310287571.3A patent/CN103361734B/zh not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02185018A (ja) * | 1989-01-11 | 1990-07-19 | Nec Corp | 半導体膜の形成方法 |
US5960323A (en) * | 1996-06-20 | 1999-09-28 | Sanyo Electric Co., Ltd. | Laser anneal method for a semiconductor device |
CN1354495A (zh) * | 2000-09-05 | 2002-06-19 | 索尼株式会社 | 半导体薄膜及其生产方法和设备、及生产单晶薄膜的方法 |
CN1501457A (zh) * | 2002-11-12 | 2004-06-02 | 统宝光电股份有限公司 | 利用准分子激光退火工艺制作多晶硅薄膜的方法 |
TW594884B (en) * | 2003-05-29 | 2004-06-21 | Univ Nat Chiao Tung | Laser re-crystallization method of low temperature polysilicon thin film transistor |
US20050000408A1 (en) * | 2003-07-04 | 2005-01-06 | Toppoly Optoelectronics Corp. | Process for forming polycrystalline silicon layer by laser crystallization |
US6881686B1 (en) * | 2003-11-13 | 2005-04-19 | Sharp Laboratories Of America, Inc. | Low-fluence irradiation for lateral crystallization enabled by a heating source |
CN101236898A (zh) * | 2007-02-02 | 2008-08-06 | 群康科技(深圳)有限公司 | 低温多晶硅薄膜制作方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016033844A1 (zh) * | 2014-09-03 | 2016-03-10 | 深圳市华星光电技术有限公司 | 一种低温多晶硅薄膜的制备机构及方法 |
WO2020019470A1 (zh) * | 2018-07-25 | 2020-01-30 | 武汉华星光电技术有限公司 | 一种多晶硅薄膜和薄膜晶体管的制备方法 |
US10679851B2 (en) | 2018-07-25 | 2020-06-09 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Poly-silicon thin film and preparation method of thin film transistor |
CN110590139A (zh) * | 2019-09-06 | 2019-12-20 | 中电九天智能科技有限公司 | 激光退火制程生产线优化方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103361734B (zh) | 2015-11-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104393118B (zh) | 将制绒与清洗分步进行的晶硅太阳能电池湿化学处理方法 | |
CN105280477B (zh) | 一种蓝宝石晶片的清洗工艺 | |
CN103241958B (zh) | 一种液晶显示器玻璃基板的蚀刻方法 | |
CN103441182B (zh) | 太阳能电池的绒面处理方法及太阳能电池 | |
TW201434085A (zh) | 多晶矽片植絨清洗製程方法 | |
CN103361734A (zh) | 一种提高多晶硅产出效率的方法 | |
TW200721282A (en) | Silicon surface preparation | |
KR101272818B1 (ko) | 기판 처리 방법, 기판 및 상기 방법을 수행하기 위한 처리 장치 | |
CN102842652A (zh) | 硅片的制绒酸洗的方法 | |
CN102097526A (zh) | 一种晶体硅rie制绒的表面损伤层清洗工艺 | |
CN103700733A (zh) | 太阳能电池的n型晶体硅衬底的清洗处理方法 | |
CN102296369A (zh) | 一种多晶硅酸法制绒工艺 | |
CN104576318B (zh) | 一种非晶硅表面氧化层形成方法 | |
CN104088018A (zh) | 一种单晶硅片制绒的清洗方法及单晶制绒设备 | |
CN110571309B (zh) | 一种去除Poly绕镀清洗方法 | |
CN102364697B (zh) | 一种去除rie制绒后晶体硅表面的微损伤层的方法 | |
KR20120117687A (ko) | 텍스쳐링된 실리콘 웨이퍼를 세정하는 방법 | |
CN103646871A (zh) | 一种提高非晶硅表面氧化层均匀性的方法 | |
CN103295880B (zh) | 一种多晶硅炉管工艺中控片的改进结构及其制备方法和使用方法 | |
KR20160019857A (ko) | 공정 분리형 기판 처리장치 및 처리방법 | |
CN103681241A (zh) | 可改善氧化层质量的清洗方法 | |
JP6529715B2 (ja) | シリコンウェーハの製造方法 | |
TWI690089B (zh) | 太陽能電池製造之序列蝕刻處理 | |
CN103187293B (zh) | 半导体器件的制作方法 | |
CN104779155B (zh) | 一种硅铝生长界面的处理方法和一种用于生长铝的硅片 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co.,Ltd. Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: EverDisplay Optronics (Shanghai) Ltd. |
|
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: 201506, No. nine, No. 1568, Jinshan Industrial Zone, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co.,Ltd. Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: Shanghai Hehui optoelectronic Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151125 |