JP2001036092A5 - - Google Patents

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Publication number
JP2001036092A5
JP2001036092A5 JP1999209256A JP20925699A JP2001036092A5 JP 2001036092 A5 JP2001036092 A5 JP 2001036092A5 JP 1999209256 A JP1999209256 A JP 1999209256A JP 20925699 A JP20925699 A JP 20925699A JP 2001036092 A5 JP2001036092 A5 JP 2001036092A5
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JP
Japan
Prior art keywords
layer
impurity
semiconductor device
semiconductor
conductive type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999209256A
Other languages
English (en)
Japanese (ja)
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JP2001036092A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11209256A priority Critical patent/JP2001036092A/ja
Priority claimed from JP11209256A external-priority patent/JP2001036092A/ja
Priority to US09/464,436 priority patent/US6486513B1/en
Priority to DE10025217A priority patent/DE10025217A1/de
Priority to TW089109906A priority patent/TW463380B/zh
Priority to KR10-2000-0027967A priority patent/KR100372668B1/ko
Publication of JP2001036092A publication Critical patent/JP2001036092A/ja
Priority to US10/277,821 priority patent/US7358569B2/en
Publication of JP2001036092A5 publication Critical patent/JP2001036092A5/ja
Pending legal-status Critical Current

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JP11209256A 1999-07-23 1999-07-23 半導体装置 Pending JP2001036092A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP11209256A JP2001036092A (ja) 1999-07-23 1999-07-23 半導体装置
US09/464,436 US6486513B1 (en) 1999-07-23 1999-12-16 Semiconductor device
DE10025217A DE10025217A1 (de) 1999-07-23 2000-05-22 Halbleitereinrichtung
TW089109906A TW463380B (en) 1999-07-23 2000-05-23 Semiconductor device
KR10-2000-0027967A KR100372668B1 (ko) 1999-07-23 2000-05-24 반도체 장치
US10/277,821 US7358569B2 (en) 1999-07-23 2002-10-23 Semiconductor device with semiconductor layer having various thickness

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11209256A JP2001036092A (ja) 1999-07-23 1999-07-23 半導体装置

Publications (2)

Publication Number Publication Date
JP2001036092A JP2001036092A (ja) 2001-02-09
JP2001036092A5 true JP2001036092A5 (cg-RX-API-DMAC7.html) 2006-08-31

Family

ID=16569951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11209256A Pending JP2001036092A (ja) 1999-07-23 1999-07-23 半導体装置

Country Status (5)

Country Link
US (2) US6486513B1 (cg-RX-API-DMAC7.html)
JP (1) JP2001036092A (cg-RX-API-DMAC7.html)
KR (1) KR100372668B1 (cg-RX-API-DMAC7.html)
DE (1) DE10025217A1 (cg-RX-API-DMAC7.html)
TW (1) TW463380B (cg-RX-API-DMAC7.html)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1083607A3 (en) * 1999-08-31 2005-09-21 Matsushita Electric Industrial Co., Ltd. High voltage SOI semiconductor device
JP4840551B2 (ja) * 2001-06-07 2011-12-21 株式会社デンソー Mosトランジスタ
JP5000057B2 (ja) * 2001-07-17 2012-08-15 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US6506654B1 (en) * 2002-03-26 2003-01-14 Advanced Micro Devices, Inc. Source-side stacking fault body-tie for partially-depleted SOI MOSFET hysteresis control
JP2004072063A (ja) * 2002-06-10 2004-03-04 Nec Electronics Corp 半導体装置及びその製造方法
JP2004172541A (ja) 2002-11-22 2004-06-17 Renesas Technology Corp 半導体装置の製造方法
US20040222485A1 (en) * 2002-12-17 2004-11-11 Haynie Sheldon D. Bladed silicon-on-insulator semiconductor devices and method of making
US6955952B2 (en) * 2003-03-07 2005-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Strain balanced structure with a tensile strained silicon channel and a compressive strained silicon-germanium channel for CMOS performance enhancement
US7270884B2 (en) 2003-04-07 2007-09-18 Infineon Technologies Ag Adhesion layer for Pt on SiO2
JP4610982B2 (ja) * 2003-11-11 2011-01-12 シャープ株式会社 半導体装置の製造方法
KR100588779B1 (ko) * 2003-12-30 2006-06-12 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
US7220626B2 (en) * 2005-01-28 2007-05-22 International Business Machines Corporation Structure and method for manufacturing planar strained Si/SiGe substrate with multiple orientations and different stress levels
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7492632B2 (en) 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
DE102006019935B4 (de) * 2006-04-28 2011-01-13 Advanced Micro Devices, Inc., Sunnyvale SOI-Transistor mit reduziertem Körperpotential und ein Verfahren zur Herstellung
WO2007126807A1 (en) * 2006-04-28 2007-11-08 Advanced Micro Devices, Inc. An soi transistor having a reduced body potential and a method of forming the same
DE102006019937B4 (de) * 2006-04-28 2010-11-25 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung eines SOI-Transistors mit eingebetteter Verformungsschicht und einem reduzierten Effekt des potentialfreien Körpers
WO2007128738A1 (en) * 2006-05-02 2007-11-15 Innovative Silicon Sa Semiconductor memory cell and array using punch-through to program and read same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US7542340B2 (en) * 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
KR101277402B1 (ko) * 2007-01-26 2013-06-20 마이크론 테크놀로지, 인코포레이티드 게이트형 바디 영역으로부터 격리되는 소스/드레인 영역을 포함하는 플로팅-바디 dram 트랜지스터
US8518774B2 (en) * 2007-03-29 2013-08-27 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
DE102007020260B4 (de) * 2007-04-30 2010-04-08 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Verbessern der Transistoreigenschaften von Feldeffekttransistoren durch eine späte tiefe Implantation in Verbindung mit einem diffusionsfreien Ausheizprozess
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8085594B2 (en) * 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
WO2009039169A1 (en) 2007-09-17 2009-03-26 Innovative Silicon S.A. Refreshing data of memory cells with electrically floating body transistors
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8349662B2 (en) * 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8189376B2 (en) * 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7957206B2 (en) * 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
TW201003880A (en) * 2008-05-30 2010-01-16 Advanced Micro Devices Inc Semiconductor device comprising a chip internal electrical test structure allowing electrical measurements during the fabrication process
US20100252828A1 (en) * 2009-04-03 2010-10-07 Michael Grillberger Semiconductor device comprising a chip internal electrical test structure allowing electrical measurements during the fabrication process
US7947543B2 (en) * 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7933140B2 (en) * 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US7924630B2 (en) * 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US8223574B2 (en) * 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8319294B2 (en) * 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
WO2010102106A2 (en) 2009-03-04 2010-09-10 Innovative Silicon Isi Sa Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
KR20120006516A (ko) * 2009-03-31 2012-01-18 마이크론 테크놀로지, 인크. 반도체 메모리 디바이스를 제공하기 위한 기술들
US8139418B2 (en) * 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8498157B2 (en) * 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9076543B2 (en) * 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8199595B2 (en) * 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US8310893B2 (en) * 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US8416636B2 (en) * 2010-02-12 2013-04-09 Micron Technology, Inc. Techniques for controlling a semiconductor memory device
US8576631B2 (en) * 2010-03-04 2013-11-05 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8411513B2 (en) * 2010-03-04 2013-04-02 Micron Technology, Inc. Techniques for providing a semiconductor memory device having hierarchical bit lines
US8369177B2 (en) * 2010-03-05 2013-02-05 Micron Technology, Inc. Techniques for reading from and/or writing to a semiconductor memory device
US8547738B2 (en) 2010-03-15 2013-10-01 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same
CN102969278A (zh) * 2011-08-31 2013-03-13 上海华力微电子有限公司 提高数据保持能力的浮体动态随机存储器单元制造方法
US8748285B2 (en) 2011-11-28 2014-06-10 International Business Machines Corporation Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrate
CN102446929A (zh) * 2011-11-30 2012-05-09 上海华力微电子有限公司 Soi硅片及其制造方法、浮体效应存储器件
US10707352B2 (en) * 2018-10-02 2020-07-07 Qualcomm Incorporated Transistor with lightly doped drain (LDD) compensation implant
US12159873B2 (en) * 2021-06-21 2024-12-03 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120069A (ja) * 1987-11-02 1989-05-12 Ricoh Co Ltd 半導体装置
US4899202A (en) * 1988-07-08 1990-02-06 Texas Instruments Incorporated High performance silicon-on-insulator transistor with body node to source node connection
JPH0254967A (ja) * 1988-08-19 1990-02-23 Sony Corp Soi型mosfet
US5162246A (en) * 1990-04-27 1992-11-10 North Carolina State University Selective germanium deposition on silicon and resulting structures
JPH0434979A (ja) * 1990-05-30 1992-02-05 Seiko Instr Inc 半導体装置
JP3103159B2 (ja) 1991-07-08 2000-10-23 株式会社東芝 半導体装置
JPH0521762A (ja) 1991-07-10 1993-01-29 Mitsubishi Electric Corp 電界効果型トランジスタを備えた半導体装置およびその製造方法
US5420055A (en) 1992-01-22 1995-05-30 Kopin Corporation Reduction of parasitic effects in floating body MOSFETs
JPH06268215A (ja) 1993-03-10 1994-09-22 Hitachi Ltd Mis型半導体装置
JP3980670B2 (ja) 1994-09-09 2007-09-26 株式会社ルネサステクノロジ 半導体装置
JP3361922B2 (ja) * 1994-09-13 2003-01-07 株式会社東芝 半導体装置
US5895766A (en) * 1995-09-20 1999-04-20 Micron Technology, Inc. Method of forming a field effect transistor
US5770881A (en) * 1996-09-12 1998-06-23 International Business Machines Coproration SOI FET design to reduce transient bipolar current
JPH1129240A (ja) 1997-07-08 1999-02-02 Hokushin Ind Inc 搬送・駆動ロール及びその製造方法
JPH1140811A (ja) * 1997-07-22 1999-02-12 Hitachi Ltd 半導体装置およびその製造方法
JP3337953B2 (ja) 1997-09-05 2002-10-28 シャープ株式会社 Soi・mosfet及びその製造方法
US6121100A (en) * 1997-12-31 2000-09-19 Intel Corporation Method of fabricating a MOS transistor with a raised source/drain extension
US6235568B1 (en) * 1999-01-22 2001-05-22 Intel Corporation Semiconductor device having deposited silicon regions and a method of fabrication

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