TW463380B - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TW463380B
TW463380B TW089109906A TW89109906A TW463380B TW 463380 B TW463380 B TW 463380B TW 089109906 A TW089109906 A TW 089109906A TW 89109906 A TW89109906 A TW 89109906A TW 463380 B TW463380 B TW 463380B
Authority
TW
Taiwan
Prior art keywords
layer
impurity
semiconductor
source
oxide film
Prior art date
Application number
TW089109906A
Other languages
English (en)
Chinese (zh)
Inventor
Takuji Matsumoto
Shigenobu Maeda
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW463380B publication Critical patent/TW463380B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Thin Film Transistor (AREA)
TW089109906A 1999-07-23 2000-05-23 Semiconductor device TW463380B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11209256A JP2001036092A (ja) 1999-07-23 1999-07-23 半導体装置

Publications (1)

Publication Number Publication Date
TW463380B true TW463380B (en) 2001-11-11

Family

ID=16569951

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089109906A TW463380B (en) 1999-07-23 2000-05-23 Semiconductor device

Country Status (5)

Country Link
US (2) US6486513B1 (cg-RX-API-DMAC7.html)
JP (1) JP2001036092A (cg-RX-API-DMAC7.html)
KR (1) KR100372668B1 (cg-RX-API-DMAC7.html)
DE (1) DE10025217A1 (cg-RX-API-DMAC7.html)
TW (1) TW463380B (cg-RX-API-DMAC7.html)

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US20040222485A1 (en) * 2002-12-17 2004-11-11 Haynie Sheldon D. Bladed silicon-on-insulator semiconductor devices and method of making
US6955952B2 (en) * 2003-03-07 2005-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Strain balanced structure with a tensile strained silicon channel and a compressive strained silicon-germanium channel for CMOS performance enhancement
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US7957206B2 (en) * 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
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Also Published As

Publication number Publication date
US7358569B2 (en) 2008-04-15
JP2001036092A (ja) 2001-02-09
KR20010029737A (ko) 2001-04-16
US6486513B1 (en) 2002-11-26
US20030047784A1 (en) 2003-03-13
DE10025217A1 (de) 2001-02-01
KR100372668B1 (ko) 2003-02-17

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