JP2000348492A5 - - Google Patents

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Publication number
JP2000348492A5
JP2000348492A5 JP1999182248A JP18224899A JP2000348492A5 JP 2000348492 A5 JP2000348492 A5 JP 2000348492A5 JP 1999182248 A JP1999182248 A JP 1999182248A JP 18224899 A JP18224899 A JP 18224899A JP 2000348492 A5 JP2000348492 A5 JP 2000348492A5
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JP
Japan
Prior art keywords
erase
cell array
block
blocks
data
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JP1999182248A
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English (en)
Japanese (ja)
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JP3920501B2 (ja
JP2000348492A (ja
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Priority claimed from JP18224899A external-priority patent/JP3920501B2/ja
Priority to JP18224899A priority Critical patent/JP3920501B2/ja
Priority to US09/539,212 priority patent/US6512702B1/en
Priority to CN00108883A priority patent/CN1124618C/zh
Priority to EP00107016A priority patent/EP1041577B1/en
Priority to DE60041376T priority patent/DE60041376D1/de
Priority to KR1020000017140A priority patent/KR100344687B1/ko
Priority to TW089106150A priority patent/TW444377B/zh
Publication of JP2000348492A publication Critical patent/JP2000348492A/ja
Publication of JP2000348492A5 publication Critical patent/JP2000348492A5/ja
Publication of JP3920501B2 publication Critical patent/JP3920501B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP18224899A 1999-04-02 1999-06-28 不揮発性半導体記憶装置及びそのデータ消去制御方法 Expired - Fee Related JP3920501B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP18224899A JP3920501B2 (ja) 1999-04-02 1999-06-28 不揮発性半導体記憶装置及びそのデータ消去制御方法
US09/539,212 US6512702B1 (en) 1999-04-02 2000-03-30 Non-volatile semiconductor memory device and data erase controlling method for use therein
DE60041376T DE60041376D1 (de) 1999-04-02 2000-03-31 Nichtflüchtige Halbleiter-Speichereinrichtung und Methode zur Datenlöschkontrolle
EP00107016A EP1041577B1 (en) 1999-04-02 2000-03-31 Non-volatile semiconductor memory device and data erase controlling method for use therein
CN00108883A CN1124618C (zh) 1999-04-02 2000-03-31 非易失性半导体存储器件及其中使用的数据擦除控制方法
KR1020000017140A KR100344687B1 (ko) 1999-04-02 2000-04-01 불휘발성 반도체 기억 장치 및 그 데이터 소거 제어 방법
TW089106150A TW444377B (en) 1999-04-02 2000-04-01 Non-volatile semiconductor memory device and data erase controlling method for use therein

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-97003 1999-04-02
JP9700399 1999-04-02
JP18224899A JP3920501B2 (ja) 1999-04-02 1999-06-28 不揮発性半導体記憶装置及びそのデータ消去制御方法

Publications (3)

Publication Number Publication Date
JP2000348492A JP2000348492A (ja) 2000-12-15
JP2000348492A5 true JP2000348492A5 (https=) 2005-06-30
JP3920501B2 JP3920501B2 (ja) 2007-05-30

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ID=26438141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18224899A Expired - Fee Related JP3920501B2 (ja) 1999-04-02 1999-06-28 不揮発性半導体記憶装置及びそのデータ消去制御方法

Country Status (7)

Country Link
US (1) US6512702B1 (https=)
EP (1) EP1041577B1 (https=)
JP (1) JP3920501B2 (https=)
KR (1) KR100344687B1 (https=)
CN (1) CN1124618C (https=)
DE (1) DE60041376D1 (https=)
TW (1) TW444377B (https=)

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JP2005108273A (ja) * 2003-09-26 2005-04-21 Toshiba Corp 不揮発性半導体記憶装置
US6868009B1 (en) * 2003-10-20 2005-03-15 Macronix International Co., Ltd. Flash memory device with byte erase
JP2005135466A (ja) * 2003-10-29 2005-05-26 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7299314B2 (en) * 2003-12-31 2007-11-20 Sandisk Corporation Flash storage system with write/erase abort detection mechanism
KR100604561B1 (ko) * 2004-05-11 2006-07-31 에스티마이크로일렉트로닉스 엔.브이. 낸드 플래시 메모리 소자 및 이의 웰 형성 방법
JP2005332148A (ja) * 2004-05-19 2005-12-02 Keihin Corp 車載用制御装置の記憶データの書き換えシステム
US7009889B2 (en) * 2004-05-28 2006-03-07 Sandisk Corporation Comprehensive erase verification for non-volatile memory
US7151694B2 (en) * 2004-06-14 2006-12-19 Macronix International Co., Ltd. Integrated circuit memory with fast page mode verify
US7415646B1 (en) * 2004-09-22 2008-08-19 Spansion Llc Page—EXE erase algorithm for flash memory
KR100568118B1 (ko) 2004-09-30 2006-04-05 삼성전자주식회사 불휘발성 메모리 장치 및 그것을 위한 고속 검증 방법
KR100648254B1 (ko) * 2004-12-01 2006-11-24 삼성전자주식회사 소거시간을 줄일 수 있는 불휘발성 메모리 장치 및 그것의소거방법
JP2006164408A (ja) * 2004-12-08 2006-06-22 Toshiba Corp 不揮発性半導体記憶装置及びそのデータ消去方法。
JP4713143B2 (ja) * 2004-12-15 2011-06-29 富士通セミコンダクター株式会社 半導体記憶装置
KR100672992B1 (ko) 2005-01-04 2007-01-24 삼성전자주식회사 반도체 메모리 장치의 동작 방법
CN100464375C (zh) * 2005-10-08 2009-02-25 晶豪科技股份有限公司 降低擦除时间及防止过擦除之擦除方法
US7624239B2 (en) * 2005-11-14 2009-11-24 Sandisk Corporation Methods for the management of erase operations in non-volatile memories
US7783845B2 (en) * 2005-11-14 2010-08-24 Sandisk Corporation Structures for the management of erase operations in non-volatile memories
KR100763114B1 (ko) * 2006-05-10 2007-10-04 주식회사 하이닉스반도체 플래쉬 메모리 소자의 검증 방법
EP1870905B1 (en) * 2006-06-21 2009-12-30 STMicroelectronics S.r.l. Method and circuit for electrically programming semiconductor memory cells
WO2008010258A1 (fr) 2006-07-18 2008-01-24 Spansion Llc Dispositif de stockage non volatil et son procédé de commande d'effacement
CN101115246B (zh) * 2006-07-25 2010-06-09 中兴通讯股份有限公司 一种移动终端的数据存储方法
US7733706B2 (en) 2006-09-29 2010-06-08 Hynix Semiconductor Inc. Flash memory device and erase method thereof
KR100908526B1 (ko) * 2006-09-29 2009-07-20 주식회사 하이닉스반도체 플래쉬 메모리 장치 및 그의 소거 방법
KR100769771B1 (ko) 2006-09-29 2007-10-23 주식회사 하이닉스반도체 플래시 메모리 장치 및 그 소거 방법
JP4908149B2 (ja) * 2006-10-18 2012-04-04 株式会社東芝 Ｎａｎｄ型フラッシュメモリ
US7453734B2 (en) * 2006-11-01 2008-11-18 Macronix International Co., Ltd. Method and apparatus for fast programming of memory
US7414891B2 (en) 2007-01-04 2008-08-19 Atmel Corporation Erase verify method for NAND-type flash memories
JP2008192271A (ja) * 2007-02-08 2008-08-21 Nec Electronics Corp 半導体装置及びそのテスト方法
US20080320253A1 (en) * 2007-06-19 2008-12-25 Andrew Tomlin Memory device with circuitry for writing data of an atomic transaction
US8266391B2 (en) * 2007-06-19 2012-09-11 SanDisk Technologies, Inc. Method for writing data of an atomic transaction to a memory device
KR20090061344A (ko) * 2007-12-11 2009-06-16 삼성전자주식회사 매트 구조를 가지는 반도체 메모리 장치
US8775758B2 (en) * 2007-12-28 2014-07-08 Sandisk Technologies Inc. Memory device and method for performing a write-abort-safe firmware update
JP2008217993A (ja) * 2008-06-19 2008-09-18 Renesas Technology Corp 不揮発性半導体記憶装置
US8264891B2 (en) 2008-08-06 2012-09-11 Samsung Electronics Co., Ltd. Erase method and non-volatile semiconductor memory
JP4926144B2 (ja) * 2008-09-09 2012-05-09 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
CN101800078B (zh) * 2009-02-11 2013-02-13 北京兆易创新科技有限公司 一种非易失存储器的擦除方法及装置
US8189390B2 (en) 2009-03-05 2012-05-29 Mosaid Technologies Incorporated NAND flash architecture with multi-level row decoding
KR101604631B1 (ko) * 2009-07-21 2016-03-18 삼성전자주식회사 불 휘발성 메모리 장치 및 그것의 프로그램 방법
CN102609334B (zh) * 2012-01-09 2016-05-04 晨星软件研发(深圳)有限公司 非易失闪存擦除异常存储块修复方法和装置
JP2015176628A (ja) * 2014-03-17 2015-10-05 株式会社東芝 半導体記憶装置及びメモリコントローラ
CN105892951A (zh) * 2016-04-05 2016-08-24 柳州定店科技有限公司 一种存储器存储方法
KR102601213B1 (ko) * 2018-07-03 2023-11-10 삼성전자주식회사 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 제조 방법
US11164638B2 (en) 2018-07-03 2021-11-02 Samsung Electronics Co., Ltd. Non-volatile memory device
US11631465B2 (en) 2018-07-03 2023-04-18 Samsung Electronics Co., Ltd. Non-volatile memory device
CN110970076B (zh) * 2019-12-02 2022-03-18 武汉新芯集成电路制造有限公司 存储结构及其擦除方法
CN110970075A (zh) * 2019-12-02 2020-04-07 武汉新芯集成电路制造有限公司 存储结构及其擦除方法
JP7461868B2 (ja) * 2020-12-25 2024-04-04 ルネサスエレクトロニクス株式会社 半導体装置およびその制御方法

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