JP2000206896A5 - - Google Patents

Download PDF

Info

Publication number
JP2000206896A5
JP2000206896A5 JP2000031978A JP2000031978A JP2000206896A5 JP 2000206896 A5 JP2000206896 A5 JP 2000206896A5 JP 2000031978 A JP2000031978 A JP 2000031978A JP 2000031978 A JP2000031978 A JP 2000031978A JP 2000206896 A5 JP2000206896 A5 JP 2000206896A5
Authority
JP
Japan
Prior art keywords
organic resin
film
resin film
electro
flat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000031978A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000206896A (ja
JP3901902B2 (ja
Filing date
Publication date
Priority claimed from JP18563896A external-priority patent/JP3126661B2/ja
Application filed filed Critical
Priority to JP2000031978A priority Critical patent/JP3901902B2/ja
Publication of JP2000206896A publication Critical patent/JP2000206896A/ja
Publication of JP2000206896A5 publication Critical patent/JP2000206896A5/ja
Application granted granted Critical
Publication of JP3901902B2 publication Critical patent/JP3901902B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2000031978A 1996-06-25 2000-02-09 液晶表示装置 Expired - Lifetime JP3901902B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000031978A JP3901902B2 (ja) 1996-06-25 2000-02-09 液晶表示装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18563896A JP3126661B2 (ja) 1996-06-25 1996-06-25 液晶表示装置
JP2000031978A JP3901902B2 (ja) 1996-06-25 2000-02-09 液晶表示装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP18563896A Division JP3126661B2 (ja) 1996-06-25 1996-06-25 液晶表示装置

Publications (3)

Publication Number Publication Date
JP2000206896A JP2000206896A (ja) 2000-07-28
JP2000206896A5 true JP2000206896A5 (OSRAM) 2004-07-15
JP3901902B2 JP3901902B2 (ja) 2007-04-04

Family

ID=16174280

Family Applications (2)

Application Number Title Priority Date Filing Date
JP18563896A Expired - Fee Related JP3126661B2 (ja) 1996-06-25 1996-06-25 液晶表示装置
JP2000031978A Expired - Lifetime JP3901902B2 (ja) 1996-06-25 2000-02-09 液晶表示装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP18563896A Expired - Fee Related JP3126661B2 (ja) 1996-06-25 1996-06-25 液晶表示装置

Country Status (2)

Country Link
US (6) US5982460A (OSRAM)
JP (2) JP3126661B2 (OSRAM)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09146108A (ja) 1995-11-17 1997-06-06 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその駆動方法
JP3126661B2 (ja) * 1996-06-25 2001-01-22 株式会社半導体エネルギー研究所 液晶表示装置
JP3634089B2 (ja) * 1996-09-04 2005-03-30 株式会社半導体エネルギー研究所 表示装置
US6262438B1 (en) * 1996-11-04 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Active matrix type display circuit and method of manufacturing the same
US6088070A (en) 1997-01-17 2000-07-11 Semiconductor Energy Laboratory Co., Ltd. Active matrix liquid crystal with capacitor between light blocking film and pixel connecting electrode
JP3784491B2 (ja) 1997-03-28 2006-06-14 株式会社半導体エネルギー研究所 アクティブマトリクス型の表示装置
KR100251512B1 (ko) 1997-07-12 2000-04-15 구본준 횡전계방식 액정표시장치
CN1173216C (zh) * 1997-11-03 2004-10-27 三星电子株式会社 具有改变的电极排列的液晶显示器
JP3973787B2 (ja) * 1997-12-31 2007-09-12 三星電子株式会社 液晶表示装置及びその製造方法
KR100293436B1 (ko) * 1998-01-23 2001-08-07 구본준, 론 위라하디락사 횡전계방식액정표시장치
JP3980156B2 (ja) 1998-02-26 2007-09-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
JP3230664B2 (ja) * 1998-04-23 2001-11-19 日本電気株式会社 液晶表示装置とその製造方法
JP3017712B2 (ja) * 1998-05-15 2000-03-13 松下電送システム株式会社 インターネット・ファクシミリ
US6965422B2 (en) * 1998-07-24 2005-11-15 Sharp Kabushiki Kaisha Liquid crystal display device
US6313481B1 (en) 1998-08-06 2001-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
JP3125872B2 (ja) * 1998-09-14 2001-01-22 日本電気株式会社 アクティブマトリクス型液晶表示装置
US6278502B1 (en) * 1998-09-28 2001-08-21 International Business Machines Corporation Pixel capacitor formed from multiple layers
US6576924B1 (en) * 1999-02-12 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate
JP4372943B2 (ja) 1999-02-23 2009-11-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3796070B2 (ja) * 1999-07-21 2006-07-12 シャープ株式会社 液晶表示装置
US6563482B1 (en) 1999-07-21 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Display device
TW478014B (en) * 1999-08-31 2002-03-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing thereof
US6646287B1 (en) * 1999-11-19 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with tapered gate and insulating film
KR100583979B1 (ko) 2000-02-11 2006-05-26 엘지.필립스 엘시디 주식회사 액정 표시장치 제조방법 및 그 제조방법에 따른액정표시장치
TWI290252B (en) * 2000-02-25 2007-11-21 Sharp Kk Liquid crystal display device
JP2002107743A (ja) * 2000-09-25 2002-04-10 Koninkl Philips Electronics Nv 反射型液晶表示装置
TWI221645B (en) * 2001-01-19 2004-10-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
TW513604B (en) * 2001-02-14 2002-12-11 Au Optronics Corp A thin film transistor liquid crystal display
KR100380142B1 (ko) * 2001-07-18 2003-04-11 엘지.필립스 엘시디 주식회사 반사투과형 액정표시장치용 어레이기판
KR100408346B1 (ko) * 2001-07-18 2003-12-06 엘지.필립스 엘시디 주식회사 반사투과형 액정표시장치용 어레이기판과 그 제조방법
JP4019697B2 (ja) * 2001-11-15 2007-12-12 株式会社日立製作所 液晶表示装置
CN100412633C (zh) * 2001-11-30 2008-08-20 夏普公司 液晶显示装置
JP2003207794A (ja) * 2002-01-11 2003-07-25 Sanyo Electric Co Ltd アクティブマトリクス型表示装置
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP4463493B2 (ja) 2002-04-15 2010-05-19 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP3989763B2 (ja) * 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7242021B2 (en) * 2002-04-23 2007-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display element using semiconductor device
TWI263339B (en) 2002-05-15 2006-10-01 Semiconductor Energy Lab Light emitting device and method for manufacturing the same
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
JP2005164854A (ja) * 2003-12-01 2005-06-23 Nec Lcd Technologies Ltd 液晶表示装置
TWI226712B (en) * 2003-12-05 2005-01-11 Au Optronics Corp Pixel structure and fabricating method thereof
JP3891995B2 (ja) 2004-04-26 2007-03-14 シャープ株式会社 液晶表示装置
TWI271867B (en) * 2005-06-20 2007-01-21 Au Optronics Corp Pixel structure and fabrication method thereof
TWI292281B (en) * 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
CN100388070C (zh) * 2006-01-27 2008-05-14 友达光电股份有限公司 液晶显示面板及液晶显示装置
JP4747911B2 (ja) * 2006-03-30 2011-08-17 ソニー株式会社 液晶パネル用アレイ基板および液晶パネルならびにこれらの製造方法
TW202449481A (zh) * 2006-05-16 2024-12-16 日商半導體能源研究所股份有限公司 液晶顯示裝置
US20070296882A1 (en) * 2006-06-23 2007-12-27 Jau-Ching Huang Thin film transistor array
US20090026533A1 (en) * 2007-07-24 2009-01-29 Force-Mos Technology Corporation Trench MOSFET with multiple P-bodies for ruggedness and on-resistance improvements
WO2009055621A1 (en) * 2007-10-26 2009-04-30 Applied Materials, Inc. Methods and apparatus for forming color filter on array flat panel displays
JP5589359B2 (ja) 2009-01-05 2014-09-17 セイコーエプソン株式会社 電気光学装置及び電子機器
US9230994B2 (en) 2010-09-15 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
CN202033561U (zh) * 2011-04-08 2011-11-09 京东方科技集团股份有限公司 一种半透半反式的像素结构及半透半反式液晶显示器
KR101903671B1 (ko) * 2011-10-07 2018-10-04 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
US8995218B2 (en) 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102937764B (zh) * 2012-10-17 2015-01-28 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置及其驱动方法
CN111028687B (zh) * 2019-12-16 2021-10-15 厦门天马微电子有限公司 一种显示面板及显示装置
GB2640290A (en) * 2024-04-11 2025-10-15 Jaguar Land Rover Ltd Axial crush member

Family Cites Families (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2284984A1 (fr) * 1974-09-13 1976-04-09 Commissariat Energie Atomique Procede de realisation de transistors m.o.s. sur isolant pour la detection de rayonnements
US4143266A (en) 1974-09-13 1979-03-06 Commissariat A L'energie Atomique Method and device for detecting radiatons
US4470060A (en) * 1981-01-09 1984-09-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display with vertical non-single crystal semiconductor field effect transistors
US5650637A (en) 1982-04-30 1997-07-22 Seiko Epson Corporation Active matrix assembly
US5677547A (en) 1982-04-30 1997-10-14 Seiko Epson Corporation Thin film transistor and display device including same
JPS5921064A (ja) 1982-04-30 1984-02-02 Seiko Epson Corp 液晶表示装置
US5365079A (en) 1982-04-30 1994-11-15 Seiko Epson Corporation Thin film transistor and display device including same
JPS58167372U (ja) 1983-02-24 1983-11-08 自動車機器株式会社 流量制御弁
JPS609970A (ja) 1983-06-24 1985-01-19 日本ゼオン株式会社 カ−ペツト裏打用接着剤組成物
JPS6045219A (ja) * 1983-08-23 1985-03-11 Toshiba Corp アクテイブマトリクス型表示装置
US4598305A (en) * 1984-06-18 1986-07-01 Xerox Corporation Depletion mode thin film semiconductor photodetectors
JPS6329924A (ja) * 1986-07-23 1988-02-08 Komatsu Ltd 半導体装置の製造方法
JPH0210877A (ja) * 1988-06-29 1990-01-16 Matsushita Electric Ind Co Ltd 光学的パターン検出装置の製造方法
JPH02181419A (ja) * 1989-01-06 1990-07-16 Hitachi Ltd レーザアニール方法
US5051570A (en) * 1989-01-20 1991-09-24 Nec Corporation Liquid crystal light valve showing an improved display contrast
JPH02245742A (ja) 1989-03-17 1990-10-01 Matsushita Electric Ind Co Ltd 反射型液晶表示デバイス
JPH039562A (ja) * 1989-06-07 1991-01-17 Sharp Corp 半導体装置
JPH0323671A (ja) * 1989-06-21 1991-01-31 Nippon Sheet Glass Co Ltd 集積化機能デバイス及びその製造方法並びにこのデバイスを用いた機能モジュール
JPH03175430A (ja) 1989-12-05 1991-07-30 Nec Corp 反射型液晶表示装置
JP2538086B2 (ja) * 1990-01-11 1996-09-25 松下電器産業株式会社 液晶表示デバイスおよびその製造方法
JP2622183B2 (ja) 1990-04-05 1997-06-18 シャープ株式会社 アクティブマトリクス表示装置
US5162933A (en) * 1990-05-16 1992-11-10 Nippon Telegraph And Telephone Corporation Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium
EP0459763B1 (en) * 1990-05-29 1997-05-02 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistors
JP2616160B2 (ja) * 1990-06-25 1997-06-04 日本電気株式会社 薄膜電界効果型トランジスタ素子アレイ
US5245450A (en) * 1990-07-23 1993-09-14 Hosiden Corporation Liquid crystal display device with control capacitors for gray-scale
US5273910A (en) * 1990-08-08 1993-12-28 Minnesota Mining And Manufacturing Company Method of making a solid state electromagnetic radiation detector
US5221365A (en) * 1990-10-22 1993-06-22 Sanyo Electric Co., Ltd. Photovoltaic cell and method of manufacturing polycrystalline semiconductive film
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR960010723B1 (ko) * 1990-12-20 1996-08-07 가부시끼가이샤 한도오따이 에네루기 겐큐쇼 전기광학장치
JP2935280B2 (ja) 1991-02-08 1999-08-16 富士通株式会社 薄膜トランジスタマトリックス
US5289030A (en) * 1991-03-06 1994-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide layer
JP2998255B2 (ja) 1991-04-04 2000-01-11 セイコーエプソン株式会社 薄膜トランジスタ装置及びその製造方法
JPH04318523A (ja) 1991-04-17 1992-11-10 Oki Electric Ind Co Ltd 薄膜トランジスタ型液晶表示装置
JPH04318522A (ja) 1991-04-17 1992-11-10 Oki Electric Ind Co Ltd 薄膜トランジスタ型液晶表示装置
JPH04326330A (ja) 1991-04-26 1992-11-16 Sharp Corp 液晶表示装置およびその製造方法
JP3150365B2 (ja) * 1991-07-22 2001-03-26 株式会社東芝 液晶表示装置
US5414547A (en) * 1991-11-29 1995-05-09 Seiko Epson Corporation Liquid crystal display device and manufacturing method therefor
US5317433A (en) * 1991-12-02 1994-05-31 Canon Kabushiki Kaisha Image display device with a transistor on one side of insulating layer and liquid crystal on the other side
US5459595A (en) * 1992-02-07 1995-10-17 Sharp Kabushiki Kaisha Active matrix liquid crystal display
US5254480A (en) * 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
NL194848C (nl) * 1992-06-01 2003-04-03 Samsung Electronics Co Ltd Vloeibaar-kristalindicatorinrichting.
JP3245959B2 (ja) * 1992-06-05 2002-01-15 松下電器産業株式会社 液晶画像表示装置の製造方法
US5459596A (en) * 1992-09-14 1995-10-17 Kabushiki Kaisha Toshiba Active matrix liquid crystal display with supplemental capacitor line which overlaps signal line
JP2924506B2 (ja) * 1992-10-27 1999-07-26 日本電気株式会社 アクティブマトリックス型液晶表示装置の画素構造
JP2950061B2 (ja) 1992-11-13 1999-09-20 日本電気株式会社 液晶表示素子
EP0598394A3 (en) * 1992-11-16 1997-07-16 Tokyo Electron Ltd Method and apparatus for manufacturing a liquid crystal display substrate, and apparatus and method for evaluating semiconductor crystals.
DE69332142T2 (de) * 1992-12-25 2003-03-06 Sony Corp., Tokio/Tokyo Substrat mit aktiver Matrix
JP3383047B2 (ja) 1992-12-25 2003-03-04 ソニー株式会社 アクティブマトリクス基板
FR2702286B1 (fr) * 1993-03-04 1998-01-30 Samsung Electronics Co Ltd Affichage à cristaux liquides et procédé pour le fabriquer.
WO1994022173A1 (fr) * 1993-03-23 1994-09-29 Tdk Corporation Dispositif d'imagerie a semiconducteurs et procede de production correspondant
JP3175430B2 (ja) 1993-10-14 2001-06-11 松下電器産業株式会社 給湯機
JPH07199222A (ja) 1993-12-29 1995-08-04 Sony Corp 液晶表示装置
JPH07333634A (ja) 1994-06-10 1995-12-22 Sony Corp 液晶表示パネル
US5483366A (en) * 1994-07-20 1996-01-09 David Sarnoff Research Center Inc LCD with hige capacitance pixel having an ITO active region/poly SI pixel region electrical connection and having poly SI selection line extensions along pixel edges
JP3339190B2 (ja) 1994-07-27 2002-10-28 ソニー株式会社 液晶表示装置
TW289097B (OSRAM) * 1994-08-24 1996-10-21 Hitachi Ltd
JP3240858B2 (ja) * 1994-10-19 2001-12-25 ソニー株式会社 カラー表示装置
JPH08160454A (ja) 1994-12-09 1996-06-21 Sanyo Electric Co Ltd 液晶表示装置
JPH08306926A (ja) * 1995-05-07 1996-11-22 Semiconductor Energy Lab Co Ltd 液晶電気光学装置
JPH0926603A (ja) * 1995-05-08 1997-01-28 Semiconductor Energy Lab Co Ltd 表示装置
US6372534B1 (en) * 1995-06-06 2002-04-16 Lg. Philips Lcd Co., Ltd Method of making a TFT array with photo-imageable insulating layer over address lines
JP3307181B2 (ja) * 1995-07-31 2002-07-24 ソニー株式会社 透過型表示装置
JPH0943616A (ja) 1995-07-31 1997-02-14 Sony Corp 液晶表示装置
JPH0943640A (ja) 1995-07-31 1997-02-14 Sony Corp 液晶表示装置
JPH0943629A (ja) 1995-07-31 1997-02-14 Sony Corp 液晶表示装置
JPH0950044A (ja) 1995-08-08 1997-02-18 Sony Corp アクティブマトリクス表示装置
JP2990046B2 (ja) * 1995-08-16 1999-12-13 日本電気株式会社 反射型液晶表示装置及びその製造方法
JP3209317B2 (ja) * 1995-10-31 2001-09-17 シャープ株式会社 透過型液晶表示装置およびその製造方法
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
JPH09197390A (ja) 1995-11-17 1997-07-31 Semiconductor Energy Lab Co Ltd 表示装置
TWI228625B (en) 1995-11-17 2005-03-01 Semiconductor Energy Lab Display device
KR0158260B1 (ko) * 1995-11-25 1998-12-15 구자홍 엑티브 매트릭스 액정표시장치의 매트릭스 어레이 및 제조방법
US5940732A (en) * 1995-11-27 1999-08-17 Semiconductor Energy Laboratory Co., Method of fabricating semiconductor device
TW309633B (OSRAM) * 1995-12-14 1997-07-01 Handotai Energy Kenkyusho Kk
US6449024B1 (en) * 1996-01-26 2002-09-10 Semiconductor Energy Laboratory Co., Inc. Liquid crystal electro-optical device utilizing a polymer with an anisotropic refractive index
US6055028A (en) * 1996-02-14 2000-04-25 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal electro-optical device
JP3696687B2 (ja) * 1996-02-29 2005-09-21 株式会社半導体エネルギー研究所 液晶表示装置およびその作製方法
KR100386203B1 (ko) * 1996-02-29 2003-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전기광학장치및그제조방법
JP3904646B2 (ja) 1996-02-29 2007-04-11 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP3597305B2 (ja) * 1996-03-05 2004-12-08 株式会社半導体エネルギー研究所 液晶表示装置およびその作製方法
US5652637A (en) * 1996-03-11 1997-07-29 Marini; Martin A. Eyeglasses with detachable temples
TW364275B (en) * 1996-03-12 1999-07-11 Idemitsu Kosan Co Organic electroluminescent element and organic electroluminescent display device
DE19712233C2 (de) * 1996-03-26 2003-12-11 Lg Philips Lcd Co Flüssigkristallanzeige und Herstellungsverfahren dafür
EP0855614A4 (en) * 1996-05-15 2001-12-19 Seiko Epson Corp THIN FILM COMPONENT WITH COATING FILM, LIQUID CRYSTAL FIELD, ELECTRONIC DEVICE AND MANUFACTURING METHOD OF THE THIN FILM COMPONENT
US6005648A (en) * 1996-06-25 1999-12-21 Semiconductor Energy Laboratory Co., Ltd. Display device
JP3126661B2 (ja) * 1996-06-25 2001-01-22 株式会社半導体エネルギー研究所 液晶表示装置
KR100249187B1 (ko) * 1996-07-13 2000-03-15 구본준 박막액정표시장치(tft-lcd)및그제조방법
US6262438B1 (en) * 1996-11-04 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Active matrix type display circuit and method of manufacturing the same
CN1148600C (zh) * 1996-11-26 2004-05-05 三星电子株式会社 薄膜晶体管基片及其制造方法
JPH10268360A (ja) * 1997-03-26 1998-10-09 Semiconductor Energy Lab Co Ltd 表示装置
JP3784491B2 (ja) * 1997-03-28 2006-06-14 株式会社半導体エネルギー研究所 アクティブマトリクス型の表示装置
JP3738530B2 (ja) * 1997-06-30 2006-01-25 ソニー株式会社 カラー表示装置
JPH1131590A (ja) * 1997-07-09 1999-02-02 Tdk Corp 有機ｅｌ素子
JP3919900B2 (ja) * 1997-09-19 2007-05-30 株式会社半導体エネルギー研究所 液晶表示装置およびその作製方法
JP3980156B2 (ja) * 1998-02-26 2007-09-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
KR100280889B1 (ko) * 1998-06-30 2001-02-01 구본준, 론 위라하디락사 액정 표시 장치의 패드부 제조 방법 및 그 방법에 의한 액정 표시 장치
US6489952B1 (en) * 1998-11-17 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Active matrix type semiconductor display device
US6531993B1 (en) * 1999-03-05 2003-03-11 Semiconductor Energy Laboratory Co., Ltd. Active matrix type display device
TWI245950B (en) * 1999-03-19 2005-12-21 Sharp Kk Liquid crystal display apparatus
US6515648B1 (en) * 1999-08-31 2003-02-04 Semiconductor Energy Laboratory Co., Ltd. Shift register circuit, driving circuit of display device, and display device using the driving circuit
JP4727029B2 (ja) * 1999-11-29 2011-07-20 株式会社半導体エネルギー研究所 Ｅｌ表示装置、電気器具及びｅｌ表示装置用の半導体素子基板
JP4434411B2 (ja) * 2000-02-16 2010-03-17 出光興産株式会社 アクティブ駆動型有機ｅｌ発光装置およびその製造方法
TW521303B (en) * 2000-02-28 2003-02-21 Semiconductor Energy Lab Electronic device
JP2001257350A (ja) * 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6646284B2 (en) * 2000-12-12 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
SG118117A1 (en) * 2001-02-28 2006-01-27 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US6791648B2 (en) * 2001-03-15 2004-09-14 Seiko Epson Corporation Liquid crystal device, projection display device and, manufacturing method for substrate for liquid crystal device

Similar Documents

Publication Publication Date Title
JP2000206896A5 (OSRAM)
JP2025156483A5 (ja) 半導体装置
JP2024096824A5 (OSRAM)
TW200640013A (en) Thin film transistor panel
TW200640014A (en) Thin film transistor panel
EP1648030A3 (en) Organic thin film transistor array
JPH1078593A5 (OSRAM)
EP2061087A3 (en) Thin film field effect transistor and display using the same
JP2007500952A5 (OSRAM)
WO2004003972A3 (en) Transistor and sensors made from molecular materials with electric dipoles
JPH10294280A5 (OSRAM)
EP1367659A3 (en) Organic field effect transistor
WO2003016599A1 (en) Organic semiconductor element
TW200509397A (en) Field effect transisitor and fabricating method thereof
JP2002134756A5 (OSRAM)
WO1999031720A3 (en) Thin film transistors and electronic devices comprising such
EP0766120A3 (en) Active matrix substrate and display device incorporating the same
TW200703735A (en) Organic thin film transistor array panel and method of manufacturing the same
TW200505274A (en) Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
JP2001274402A5 (OSRAM)
JP2003207794A5 (OSRAM)
JP2002094064A5 (OSRAM)
JPH11121760A5 (ja) 半導体装置
JPH10142636A5 (ja) アクティブマトリクス型表示装置
JP2021015954A5 (OSRAM)