FR2284984A1 - Procede de realisation de transistors m.o.s. sur isolant pour la detection de rayonnements - Google Patents

Procede de realisation de transistors m.o.s. sur isolant pour la detection de rayonnements

Info

Publication number
FR2284984A1
FR2284984A1 FR7431139A FR7431139A FR2284984A1 FR 2284984 A1 FR2284984 A1 FR 2284984A1 FR 7431139 A FR7431139 A FR 7431139A FR 7431139 A FR7431139 A FR 7431139A FR 2284984 A1 FR2284984 A1 FR 2284984A1
Authority
FR
France
Prior art keywords
zone
mos transistor
charge carrier
potential
carrier collecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7431139A
Other languages
English (en)
Other versions
FR2284984B1 (fr
Inventor
Joseph Borel
Vincent Le Goascoz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7431139A priority Critical patent/FR2284984A1/fr
Priority to CH1155675A priority patent/CH596671A5/xx
Priority to NL7510655A priority patent/NL7510655A/xx
Priority to JP50110844A priority patent/JPS5154790A/ja
Priority to DE19752541117 priority patent/DE2541117A1/de
Publication of FR2284984A1 publication Critical patent/FR2284984A1/fr
Priority to US05/900,088 priority patent/US4143266A/en
Application granted granted Critical
Publication of FR2284984B1 publication Critical patent/FR2284984B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
FR7431139A 1974-09-13 1974-09-13 Procede de realisation de transistors m.o.s. sur isolant pour la detection de rayonnements Granted FR2284984A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7431139A FR2284984A1 (fr) 1974-09-13 1974-09-13 Procede de realisation de transistors m.o.s. sur isolant pour la detection de rayonnements
CH1155675A CH596671A5 (fr) 1974-09-13 1975-09-05
NL7510655A NL7510655A (nl) 1974-09-13 1975-09-10 Werkwijze en detectie-inrichting van stralingen.
JP50110844A JPS5154790A (fr) 1974-09-13 1975-09-12
DE19752541117 DE2541117A1 (de) 1974-09-13 1975-09-15 Verfahren zum abtasten von strahlung und vorrichtung zur durchfuehrung des verfahrens
US05/900,088 US4143266A (en) 1974-09-13 1978-04-26 Method and device for detecting radiatons

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7431139A FR2284984A1 (fr) 1974-09-13 1974-09-13 Procede de realisation de transistors m.o.s. sur isolant pour la detection de rayonnements

Publications (2)

Publication Number Publication Date
FR2284984A1 true FR2284984A1 (fr) 1976-04-09
FR2284984B1 FR2284984B1 (fr) 1978-12-29

Family

ID=9143081

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7431139A Granted FR2284984A1 (fr) 1974-09-13 1974-09-13 Procede de realisation de transistors m.o.s. sur isolant pour la detection de rayonnements

Country Status (5)

Country Link
JP (1) JPS5154790A (fr)
CH (1) CH596671A5 (fr)
DE (1) DE2541117A1 (fr)
FR (1) FR2284984A1 (fr)
NL (1) NL7510655A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5574293A (en) * 1993-03-23 1996-11-12 Tdk Corp. Solid state imaging device using disilane
JP3126661B2 (ja) 1996-06-25 2001-01-22 株式会社半導体エネルギー研究所 液晶表示装置
JP3634089B2 (ja) 1996-09-04 2005-03-30 株式会社半導体エネルギー研究所 表示装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
NL7510655A (nl) 1976-03-16
DE2541117A1 (de) 1976-03-25
FR2284984B1 (fr) 1978-12-29
JPS5154790A (fr) 1976-05-14
CH596671A5 (fr) 1978-03-15

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Legal Events

Date Code Title Description
ST Notification of lapse