JPS5630371A - Semiconductor image pickup unit - Google Patents

Semiconductor image pickup unit

Info

Publication number
JPS5630371A
JPS5630371A JP10521679A JP10521679A JPS5630371A JP S5630371 A JPS5630371 A JP S5630371A JP 10521679 A JP10521679 A JP 10521679A JP 10521679 A JP10521679 A JP 10521679A JP S5630371 A JPS5630371 A JP S5630371A
Authority
JP
Japan
Prior art keywords
region
bit line
word line
voltage
intensity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10521679A
Other languages
Japanese (ja)
Other versions
JPS6033349B2 (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP54105216A priority Critical patent/JPS6033349B2/en
Publication of JPS5630371A publication Critical patent/JPS5630371A/en
Publication of JPS6033349B2 publication Critical patent/JPS6033349B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To improve linearity and to increase an operation speed by employing the structure that generates a high potential barrier in a channel, by forming storage capacity by using as a floating region either of main electrodes of SIT showing unsaturated electric current voltage characteristics with a short channel. CONSTITUTION:This unit consists of n<+> substrate 21, n<-> epitaxial layer 22, n<+> surface floating region 23, p<+> gate region 24, insulating film 25, bit line 26, separate region 27, etc. As word line 24' is applied with a pulse voltage and bit line 26 is also applied with a negative voltage, electrons flow out of region 23 and are absorbed by substrate 21. Through irradiation with incident light 28, electron-hole pairs are generated in region 22 according to the intensity of the light and many electrons flow into region 23 by being accelerated by an electric field. The total of them is in direct proportion to the irradiation intensity. Next, a read is taken by applying the same pulse as that in refresh operation to the word line and the read voltage decreases in proportion to the incident light intensity. Since a decoder is connected to the word line and a sense amplifier is also connected to the bit line, the read voltage is amplified by the sense amplifier and led out as an electric signal.
JP54105216A 1979-08-18 1979-08-18 semiconductor imaging device Expired JPS6033349B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54105216A JPS6033349B2 (en) 1979-08-18 1979-08-18 semiconductor imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54105216A JPS6033349B2 (en) 1979-08-18 1979-08-18 semiconductor imaging device

Publications (2)

Publication Number Publication Date
JPS5630371A true JPS5630371A (en) 1981-03-26
JPS6033349B2 JPS6033349B2 (en) 1985-08-02

Family

ID=14401467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54105216A Expired JPS6033349B2 (en) 1979-08-18 1979-08-18 semiconductor imaging device

Country Status (1)

Country Link
JP (1) JPS6033349B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5820075A (en) * 1981-07-29 1983-02-05 Olympus Optical Co Ltd Image pickup device
JPS58105672A (en) * 1981-12-17 1983-06-23 Fuji Photo Film Co Ltd Semiconductor image pickup device
JPS59107688A (en) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd Semiconductor image pickup device
JPS59108473A (en) * 1982-12-14 1984-06-22 Junichi Nishizawa Solid-state image pickup device
JPS59108458A (en) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd Solid-state image pickup device and its manufacture
JPS59108470A (en) * 1982-12-14 1984-06-22 Junichi Nishizawa Solid-state image pickup device
JPS59108472A (en) * 1982-12-14 1984-06-22 Junichi Nishizawa Solid-state image pickup device
JPS59108468A (en) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd Solid-state image pickup device
JPS59108459A (en) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd Solid-state image pickup device
JPS59109020A (en) * 1982-12-14 1984-06-23 Fuji Photo Film Co Ltd Endoscope using solid state image pickup device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5820075A (en) * 1981-07-29 1983-02-05 Olympus Optical Co Ltd Image pickup device
JPS58105672A (en) * 1981-12-17 1983-06-23 Fuji Photo Film Co Ltd Semiconductor image pickup device
JPH0444465B2 (en) * 1981-12-17 1992-07-21 Fuji Photo Film Co Ltd
JPS59107688A (en) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd Semiconductor image pickup device
JPH0414547B2 (en) * 1982-12-13 1992-03-13 Fuji Photo Film Co Ltd
JPS59108459A (en) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd Solid-state image pickup device
JPS59108472A (en) * 1982-12-14 1984-06-22 Junichi Nishizawa Solid-state image pickup device
JPS59108468A (en) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd Solid-state image pickup device
JPS59108470A (en) * 1982-12-14 1984-06-22 Junichi Nishizawa Solid-state image pickup device
JPS59109020A (en) * 1982-12-14 1984-06-23 Fuji Photo Film Co Ltd Endoscope using solid state image pickup device
JPS59108458A (en) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd Solid-state image pickup device and its manufacture
JPH0414548B2 (en) * 1982-12-14 1992-03-13 Junichi Nishizawa
JPH0414833B2 (en) * 1982-12-14 1992-03-16 Junichi Nishizawa
JPH0414832B2 (en) * 1982-12-14 1992-03-16 Junichi Nishizawa
JPS59108473A (en) * 1982-12-14 1984-06-22 Junichi Nishizawa Solid-state image pickup device
JPH0459828B2 (en) * 1982-12-14 1992-09-24 Orinpasu Kogaku Kogyo Kk

Also Published As

Publication number Publication date
JPS6033349B2 (en) 1985-08-02

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