JP2000036620A - 窒化物エピタキシのための多層インジウム含有窒化物緩衝層 - Google Patents

窒化物エピタキシのための多層インジウム含有窒化物緩衝層

Info

Publication number
JP2000036620A
JP2000036620A JP14925999A JP14925999A JP2000036620A JP 2000036620 A JP2000036620 A JP 2000036620A JP 14925999 A JP14925999 A JP 14925999A JP 14925999 A JP14925999 A JP 14925999A JP 2000036620 A JP2000036620 A JP 2000036620A
Authority
JP
Japan
Prior art keywords
layer
buffer
indium
buffer layer
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14925999A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000036620A5 (enrdf_load_stackoverflow
Inventor
R Scott Kern
アール・スコット・カーン
Changhua Chen
チャンフア・チェン
Werner Goetz
ワーナー・ゴエツ
Gina L Christenson
ギナ・エル・クリステンスン
Chihping Kuo
チーピン・クオ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2000036620A publication Critical patent/JP2000036620A/ja
Publication of JP2000036620A5 publication Critical patent/JP2000036620A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers

Landscapes

  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP14925999A 1998-06-05 1999-05-28 窒化物エピタキシのための多層インジウム含有窒化物緩衝層 Pending JP2000036620A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9272898A 1998-06-05 1998-06-05
US092728 1998-06-05

Publications (2)

Publication Number Publication Date
JP2000036620A true JP2000036620A (ja) 2000-02-02
JP2000036620A5 JP2000036620A5 (enrdf_load_stackoverflow) 2006-07-20

Family

ID=22234815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14925999A Pending JP2000036620A (ja) 1998-06-05 1999-05-28 窒化物エピタキシのための多層インジウム含有窒化物緩衝層

Country Status (5)

Country Link
JP (1) JP2000036620A (enrdf_load_stackoverflow)
KR (1) KR20000005908A (enrdf_load_stackoverflow)
DE (1) DE19905517B4 (enrdf_load_stackoverflow)
GB (1) GB2338107A (enrdf_load_stackoverflow)
TW (1) TW398084B (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010090499A (ko) * 2000-03-17 2001-10-18 가네꼬 히사시 질화물반도체소자 및 그 제조방법
JP2009026956A (ja) * 2007-07-19 2009-02-05 Sumitomo Electric Ind Ltd 発光素子、発光素子のための基板生産物、および発光素子を作製する方法
JP2012079824A (ja) * 2010-09-30 2012-04-19 Stanley Electric Co Ltd 積層半導体および積層半導体の製造方法
CN103700743A (zh) * 2012-09-28 2014-04-02 江苏汉莱科技有限公司 一种发光二极管及其缓冲层的制备方法
CN105428482A (zh) * 2015-12-30 2016-03-23 厦门市三安光电科技有限公司 一种led外延结构及制作方法
JP2018097367A (ja) * 2012-10-04 2018-06-21 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 発光ダイオードディスプレイの製造方法および発光ダイオードディスプレイ

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9826517D0 (en) * 1998-12-02 1999-01-27 Arima Optoelectronics Corp Semiconductor devices
US6495894B2 (en) * 2000-05-22 2002-12-17 Ngk Insulators, Ltd. Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate
JP4001262B2 (ja) * 2001-02-27 2007-10-31 日本碍子株式会社 窒化物膜の製造方法
US6489636B1 (en) 2001-03-29 2002-12-03 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
US6635904B2 (en) * 2001-03-29 2003-10-21 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
JP4088111B2 (ja) * 2002-06-28 2008-05-21 日立電線株式会社 多孔質基板とその製造方法、ＧａＮ系半導体積層基板とその製造方法
DE10245631B4 (de) 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
US7898047B2 (en) 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
US7112860B2 (en) 2003-03-03 2006-09-26 Cree, Inc. Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
JP5159040B2 (ja) * 2005-03-31 2013-03-06 株式会社光波 低温成長バッファ層の形成方法および発光素子の製造方法
KR100821220B1 (ko) * 2006-06-29 2008-04-10 서울옵토디바이스주식회사 다층의 버퍼층을 가지는 질화물 반도체 발광 소자 및 그제조방법
US7547908B2 (en) 2006-12-22 2009-06-16 Philips Lumilieds Lighting Co, Llc III-nitride light emitting devices grown on templates to reduce strain
US7534638B2 (en) 2006-12-22 2009-05-19 Philips Lumiled Lighting Co., Llc III-nitride light emitting devices grown on templates to reduce strain
US7951693B2 (en) * 2006-12-22 2011-05-31 Philips Lumileds Lighting Company, Llc III-nitride light emitting devices grown on templates to reduce strain
TWI398016B (zh) * 2007-02-07 2013-06-01 Advanced Optoelectronic Tech 具三族氮化合物半導體緩衝層之光電半導體元件及其製造方法
DE102008019268A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US8183577B2 (en) 2009-06-30 2012-05-22 Koninklijke Philips Electronics N.V. Controlling pit formation in a III-nitride device
KR101117484B1 (ko) * 2009-12-31 2012-02-29 우리엘에스티 주식회사 반도체 발광소자
US9159788B2 (en) 2013-12-31 2015-10-13 Industrial Technology Research Institute Nitride semiconductor structure
DE102016120335A1 (de) * 2016-10-25 2018-04-26 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge und Verfahren zur Herstellung einer Halbleiterschichtenfolge
DE102017101333B4 (de) 2017-01-24 2023-07-27 X-Fab Semiconductor Foundries Gmbh Halbleiter und verfahren zur herstellung eines halbleiters
TWI671801B (zh) * 2018-08-01 2019-09-11 環球晶圓股份有限公司 磊晶結構

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06164055A (ja) * 1992-11-25 1994-06-10 Asahi Chem Ind Co Ltd 量子井戸型半導体レーザ
JPH0897469A (ja) * 1994-09-29 1996-04-12 Rohm Co Ltd 半導体発光素子
JPH08125223A (ja) * 1994-10-25 1996-05-17 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子及びその製造方法
JPH08264833A (ja) * 1995-03-10 1996-10-11 Hewlett Packard Co <Hp> 発光ダイオード
JPH098412A (ja) * 1995-06-15 1997-01-10 Nec Corp 窒化ガリウム系化合物半導体発光素子
JPH09199759A (ja) * 1996-01-19 1997-07-31 Toyoda Gosei Co Ltd ３族窒化物半導体の製造方法及び半導体素子
JPH10107316A (ja) * 1996-10-01 1998-04-24 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
JPH10214999A (ja) * 1997-01-30 1998-08-11 Toyota Central Res & Dev Lab Inc Ｉｉｉ−ｖ族窒化物半導体素子
JPH10294531A (ja) * 1997-02-21 1998-11-04 Toshiba Corp 窒化物化合物半導体発光素子
JPH111391A (ja) * 1997-06-11 1999-01-06 Sumitomo Electric Ind Ltd 化合物半導体の製造装置
JPH118437A (ja) * 1997-06-13 1999-01-12 Nec Corp 窒化物系化合物半導体およびその結晶成長方法および窒化ガリウム系発光素子
JPH1140845A (ja) * 1997-05-21 1999-02-12 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子および窒化ガリウム系化合物半導体薄膜の製造方法
JPH11121800A (ja) * 1997-10-09 1999-04-30 Fuji Electric Co Ltd Ｉｉｉ 族窒化物半導体素子およびその製造方法
JPH11145063A (ja) * 1997-11-05 1999-05-28 Sanken Electric Co Ltd 窒化ガリウム半導体層を有する半導体装置及びその製造方法
JPH11145514A (ja) * 1997-11-05 1999-05-28 Toshiba Corp 窒化ガリウム系半導体素子およびその製造方法
JPH11186602A (ja) * 1997-12-24 1999-07-09 Toshiba Corp 発光素子および結晶成長方法
JPH11219904A (ja) * 1998-01-30 1999-08-10 Stanley Electric Co Ltd 化合物半導体基板、その製造方法および化合物半導体発光素子

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3352712B2 (ja) * 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
US5432808A (en) * 1993-03-15 1995-07-11 Kabushiki Kaisha Toshiba Compound semicondutor light-emitting device
US5656832A (en) * 1994-03-09 1997-08-12 Kabushiki Kaisha Toshiba Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
JPH08116091A (ja) * 1994-08-26 1996-05-07 Rohm Co Ltd 半導体発光素子およびその製法
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
JPH08288552A (ja) * 1995-04-19 1996-11-01 Nippon Telegr & Teleph Corp <Ntt> 半導体発光素子及びその製造方法
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US5798537A (en) * 1995-08-31 1998-08-25 Kabushiki Kaisha Toshiba Blue light-emitting device
US5789265A (en) * 1995-08-31 1998-08-04 Kabushiki Kaisha Toshiba Method of manufacturing blue light-emitting device by using BCL3 and CL2
JP3879173B2 (ja) * 1996-03-25 2007-02-07 住友電気工業株式会社 化合物半導体気相成長方法
US5729029A (en) * 1996-09-06 1998-03-17 Hewlett-Packard Company Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06164055A (ja) * 1992-11-25 1994-06-10 Asahi Chem Ind Co Ltd 量子井戸型半導体レーザ
JPH0897469A (ja) * 1994-09-29 1996-04-12 Rohm Co Ltd 半導体発光素子
JPH08125223A (ja) * 1994-10-25 1996-05-17 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子及びその製造方法
JPH08264833A (ja) * 1995-03-10 1996-10-11 Hewlett Packard Co <Hp> 発光ダイオード
JPH098412A (ja) * 1995-06-15 1997-01-10 Nec Corp 窒化ガリウム系化合物半導体発光素子
JPH09199759A (ja) * 1996-01-19 1997-07-31 Toyoda Gosei Co Ltd ３族窒化物半導体の製造方法及び半導体素子
JPH10107316A (ja) * 1996-10-01 1998-04-24 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
JPH10214999A (ja) * 1997-01-30 1998-08-11 Toyota Central Res & Dev Lab Inc Ｉｉｉ−ｖ族窒化物半導体素子
JPH10294531A (ja) * 1997-02-21 1998-11-04 Toshiba Corp 窒化物化合物半導体発光素子
JPH1140845A (ja) * 1997-05-21 1999-02-12 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子および窒化ガリウム系化合物半導体薄膜の製造方法
JPH111391A (ja) * 1997-06-11 1999-01-06 Sumitomo Electric Ind Ltd 化合物半導体の製造装置
JPH118437A (ja) * 1997-06-13 1999-01-12 Nec Corp 窒化物系化合物半導体およびその結晶成長方法および窒化ガリウム系発光素子
JPH11121800A (ja) * 1997-10-09 1999-04-30 Fuji Electric Co Ltd Ｉｉｉ 族窒化物半導体素子およびその製造方法
JPH11145063A (ja) * 1997-11-05 1999-05-28 Sanken Electric Co Ltd 窒化ガリウム半導体層を有する半導体装置及びその製造方法
JPH11145514A (ja) * 1997-11-05 1999-05-28 Toshiba Corp 窒化ガリウム系半導体素子およびその製造方法
JPH11186602A (ja) * 1997-12-24 1999-07-09 Toshiba Corp 発光素子および結晶成長方法
JPH11219904A (ja) * 1998-01-30 1999-08-10 Stanley Electric Co Ltd 化合物半導体基板、その製造方法および化合物半導体発光素子

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010090499A (ko) * 2000-03-17 2001-10-18 가네꼬 히사시 질화물반도체소자 및 그 제조방법
JP2009026956A (ja) * 2007-07-19 2009-02-05 Sumitomo Electric Ind Ltd 発光素子、発光素子のための基板生産物、および発光素子を作製する方法
JP2012079824A (ja) * 2010-09-30 2012-04-19 Stanley Electric Co Ltd 積層半導体および積層半導体の製造方法
CN103700743A (zh) * 2012-09-28 2014-04-02 江苏汉莱科技有限公司 一种发光二极管及其缓冲层的制备方法
JP2018097367A (ja) * 2012-10-04 2018-06-21 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 発光ダイオードディスプレイの製造方法および発光ダイオードディスプレイ
US10770506B2 (en) 2012-10-04 2020-09-08 Osram Oled Gmbh Method for producing a light-emitting diode display and light-emitting diode display
CN105428482A (zh) * 2015-12-30 2016-03-23 厦门市三安光电科技有限公司 一种led外延结构及制作方法
CN105428482B (zh) * 2015-12-30 2018-09-11 厦门市三安光电科技有限公司 一种led外延结构及制作方法

Also Published As

Publication number Publication date
GB2338107A (en) 1999-12-08
DE19905517A1 (de) 1999-12-09
GB9911467D0 (en) 1999-07-14
KR20000005908A (ko) 2000-01-25
TW398084B (en) 2000-07-11
DE19905517B4 (de) 2011-02-03

Similar Documents

Publication Publication Date Title
JP2000036620A (ja) 窒化物エピタキシのための多層インジウム含有窒化物緩衝層
KR100304881B1 (ko) Gan계화합물반도체및그의결정성장방법
US7655090B2 (en) Method of controlling stress in gallium nitride films deposited on substrates
US5239188A (en) Gallium nitride base semiconductor device
US7612361B2 (en) Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same and the manufacturing method
JP3505357B2 (ja) 窒化ガリウム系半導体素子およびその製造方法
US20090087937A1 (en) Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based light emitting diode using the same
JP4809887B2 (ja) 窒化ガリウム基板の製造方法
JP5133927B2 (ja) 化合物半導体基板
JP3500281B2 (ja) 窒化ガリウム系半導体素子およびその製造方法
US20040206967A1 (en) Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate
US6967355B2 (en) Group III-nitride on Si using epitaxial BP buffer layer
KR20090115826A (ko) 그룹 3족 질화물계 반도체 소자용 버퍼층 및 그 제조 방법
JP4530234B2 (ja) 半導体発光素子
US20050241571A1 (en) Method of growing nitride single crystal on silicon substrate, nitride semiconductor light emitting device using the same, method of manufacturing the same
JP3757339B2 (ja) 化合物半導体装置の製造方法
JP5430467B2 (ja) Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体自立基板、ｉｉｉ族窒化物半導体素子、ならびに、これらの製造方法
KR101171324B1 (ko) 질화물 반도체 발광소자용 버퍼층을 형성하는 방법 및그것에 의해 형성된 버퍼층
JPH10303510A (ja) Ｉｉｉ 族窒化物半導体素子およびその製造方法
US20130214282A1 (en) Iii-n on silicon using nano structured interface layer
JP7479707B2 (ja) Ｉｉｉ－ｎ系半導体構造物及びその製造方法
JP4586094B2 (ja) 半導体発光素子
US20050090032A1 (en) Method of manufacturing nitride semiconductor light emitting device
KR100821220B1 (ko) 다층의 버퍼층을 가지는 질화물 반도체 발광 소자 및 그제조방법
JP5343274B2 (ja) 窒化物半導体薄膜の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060529

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060529

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090512

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20090812

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20090817

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100406