IT1250783B - Circuito di controllo di tensione di sorgente, in particolare per dispositivi di memoria a semiconduttori. - Google Patents
Circuito di controllo di tensione di sorgente, in particolare per dispositivi di memoria a semiconduttori.Info
- Publication number
- IT1250783B IT1250783B ITRM910727A ITRM910727A IT1250783B IT 1250783 B IT1250783 B IT 1250783B IT RM910727 A ITRM910727 A IT RM910727A IT RM910727 A ITRM910727 A IT RM910727A IT 1250783 B IT1250783 B IT 1250783B
- Authority
- IT
- Italy
- Prior art keywords
- source voltage
- voltage
- circuit
- differential amplifier
- amplifier circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
- H03F3/505—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower with field-effect devices
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
- G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Dram (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Control Of Electrical Variables (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Viene fornito un circuito di controllo di tensione di sorgente comprendente un circuito di generazione di tensione di riferimento con un circuito a retroazione negativa, un circuito di percezione di livello di tensione di sorgente per aumentare la tensione di sorgente interna quando la tensione esterna supera una data tensione, un primo circuito amplificatore differenziale per funzionamento attivo, ed un secondo circuito amplificatore differenziale per funzionamento in attesa, in modo che venga prodotta una tensione di sorgente interna stabile e la pendenza della tensione di sorgente interna venga facilmente regolata quando la tensione di sorgente di tensione esterna supera il valore dato. Il primo circuito amplificatore differenziale riceve la tensione di riferimento e la tensione della sorgente interna, controllato da un primo segnale di controllo e l'uscita del circuito di percezione del livello di tensione di sorgente. Il secondo circuito amplificatore differenziale riceve la tensione di riferimento e la tensione di sorgente interna, controllata da un secondo segnale di controllo.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900015678A KR930009148B1 (ko) | 1990-09-29 | 1990-09-29 | 전원전압 조정회로 |
Publications (3)
Publication Number | Publication Date |
---|---|
ITRM910727A0 ITRM910727A0 (it) | 1991-09-27 |
ITRM910727A1 ITRM910727A1 (it) | 1992-03-30 |
IT1250783B true IT1250783B (it) | 1995-04-21 |
Family
ID=19304259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITRM910727A IT1250783B (it) | 1990-09-29 | 1991-09-27 | Circuito di controllo di tensione di sorgente, in particolare per dispositivi di memoria a semiconduttori. |
Country Status (11)
Country | Link |
---|---|
US (1) | US5077518A (it) |
JP (1) | JPH07101374B2 (it) |
KR (1) | KR930009148B1 (it) |
CN (1) | CN1044412C (it) |
DE (1) | DE4037206C2 (it) |
FR (1) | FR2667409B1 (it) |
GB (1) | GB2248357B (it) |
HK (1) | HK36197A (it) |
IT (1) | IT1250783B (it) |
NL (1) | NL193038C (it) |
RU (1) | RU1838814C (it) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910005599B1 (ko) * | 1989-05-01 | 1991-07-31 | 삼성전자 주식회사 | 고밀도 반도체 메모리장치의 전원 공급전압 변환회로 |
JP2566067B2 (ja) * | 1991-04-26 | 1996-12-25 | 株式会社東芝 | 論理回路 |
JP2727809B2 (ja) * | 1991-08-26 | 1998-03-18 | 日本電気株式会社 | 半導体集積回路 |
US5177431A (en) * | 1991-09-25 | 1993-01-05 | Astec International Ltd. | Linear programming circuit for adjustable output voltage power converters |
JP2785548B2 (ja) * | 1991-10-25 | 1998-08-13 | 日本電気株式会社 | 半導体メモリ |
JPH05151773A (ja) * | 1991-11-29 | 1993-06-18 | Mitsubishi Electric Corp | ダイナミツク型半導体記憶装置 |
JPH05217370A (ja) * | 1992-01-30 | 1993-08-27 | Nec Corp | 内部降圧電源回路 |
KR950008453B1 (ko) * | 1992-03-31 | 1995-07-31 | 삼성전자주식회사 | 내부전원전압 발생회로 |
EP0565806B1 (en) * | 1992-04-16 | 1996-08-28 | STMicroelectronics S.r.l. | Accurate MOS threshold voltage generator |
DE69229995T2 (de) * | 1992-06-30 | 2000-03-16 | Stmicroelectronics S.R.L. | Spannungsregler für Speichergeräte |
DE69319402T2 (de) * | 1992-10-22 | 1999-04-01 | Nippon Steel Semiconductor Corp., Tateyama, Chiba | Stromversorgung mit grossem Bereich für integrierte Schaltungen |
US5483152A (en) * | 1993-01-12 | 1996-01-09 | United Memories, Inc. | Wide range power supply for integrated circuits |
US5532618A (en) * | 1992-11-30 | 1996-07-02 | United Memories, Inc. | Stress mode circuit for an integrated circuit with on-chip voltage down converter |
JP3156447B2 (ja) * | 1993-06-17 | 2001-04-16 | 富士通株式会社 | 半導体集積回路 |
JP3356223B2 (ja) * | 1993-07-12 | 2002-12-16 | 富士通株式会社 | 降圧回路及びこれを内蔵した半導体集積回路 |
JPH07105682A (ja) * | 1993-10-06 | 1995-04-21 | Nec Corp | ダイナミックメモリ装置 |
US5504450A (en) * | 1993-12-08 | 1996-04-02 | At&T Corp. | High voltage components for EEPROM system |
JP3417630B2 (ja) * | 1993-12-17 | 2003-06-16 | 株式会社日立製作所 | 半導体集積回路装置とフラッシュメモリ及び不揮発性記憶装置 |
KR970010284B1 (en) * | 1993-12-18 | 1997-06-23 | Samsung Electronics Co Ltd | Internal voltage generator of semiconductor integrated circuit |
KR960004573B1 (ko) * | 1994-02-15 | 1996-04-09 | 금성일렉트론주식회사 | 기동회로를 갖는 기준전압발생회로 |
JP2006203248A (ja) * | 1994-08-04 | 2006-08-03 | Renesas Technology Corp | 半導体装置 |
US5604430A (en) * | 1994-10-11 | 1997-02-18 | Trw Inc. | Solar array maximum power tracker with arcjet load |
KR0152905B1 (ko) * | 1994-11-15 | 1998-12-01 | 문정환 | 반도체 메모리장치의 내부전압 발생회로 |
JP3523718B2 (ja) | 1995-02-06 | 2004-04-26 | 株式会社ルネサステクノロジ | 半導体装置 |
US5570060A (en) * | 1995-03-28 | 1996-10-29 | Sgs-Thomson Microelectronics, Inc. | Circuit for limiting the current in a power transistor |
US5753841A (en) * | 1995-08-17 | 1998-05-19 | Advanced Micro Devices, Inc. | PC audio system with wavetable cache |
US5694035A (en) * | 1995-08-30 | 1997-12-02 | Micron Technology, Inc. | Voltage regulator circuit |
US5838150A (en) | 1996-06-26 | 1998-11-17 | Micron Technology, Inc. | Differential voltage regulator |
JPH10133754A (ja) * | 1996-10-28 | 1998-05-22 | Fujitsu Ltd | レギュレータ回路及び半導体集積回路装置 |
DE19716430A1 (de) * | 1997-04-18 | 1998-11-19 | Siemens Ag | Schaltungsanordnung zur Erzeugung einer internen Versorgungsspannung |
DE69719188T2 (de) * | 1997-11-05 | 2003-12-04 | Stmicroelectronics S.R.L., Agrate Brianza | Hochspannungsregelungsschaltung und entsprechendes Spannungsregelungsverfahren |
KR19990047008A (ko) * | 1997-12-02 | 1999-07-05 | 구본준 | 외부조건 변화에 둔감한 기준전압 발생회로 |
US6037762A (en) * | 1997-12-19 | 2000-03-14 | Texas Instruments Incorporated | Voltage detector having improved characteristics |
KR100273278B1 (ko) * | 1998-02-11 | 2001-01-15 | 김영환 | 반도체 소자의 펌핑회로 |
KR100506046B1 (ko) * | 1998-06-30 | 2005-10-12 | 주식회사 하이닉스반도체 | 내부전압 발생장치 |
US6226205B1 (en) * | 1999-02-22 | 2001-05-01 | Stmicroelectronics, Inc. | Reference voltage generator for an integrated circuit such as a dynamic random access memory (DRAM) |
KR100308126B1 (ko) * | 1999-07-21 | 2001-11-01 | 김영환 | 불휘발성 강유전체 메모리 장치의 레퍼런스 레벨 발생회로 |
US6333671B1 (en) * | 1999-11-03 | 2001-12-25 | International Business Machines Corporation | Sleep mode VDD detune for power reduction |
KR100576491B1 (ko) * | 1999-12-23 | 2006-05-09 | 주식회사 하이닉스반도체 | 이중 내부전압 발생장치 |
US6669253B2 (en) * | 2000-12-18 | 2003-12-30 | David W. Benzing | Wafer boat and boat holder |
JP3964182B2 (ja) * | 2001-11-02 | 2007-08-22 | 株式会社ルネサステクノロジ | 半導体装置 |
US6933769B2 (en) * | 2003-08-26 | 2005-08-23 | Micron Technology, Inc. | Bandgap reference circuit |
DE10361724A1 (de) * | 2003-12-30 | 2005-08-04 | Infineon Technologies Ag | Spannungsregelsystem |
JP5458234B2 (ja) * | 2008-01-25 | 2014-04-02 | ピーエスフォー ルクスコ エスエイアールエル | バンドギャップ基準電源回路 |
US8068356B2 (en) * | 2008-05-28 | 2011-11-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low power one-shot boost circuit |
JP5325628B2 (ja) * | 2009-03-26 | 2013-10-23 | ラピスセミコンダクタ株式会社 | 半導体メモリの基準電位発生回路 |
US8493795B2 (en) * | 2009-12-24 | 2013-07-23 | Samsung Electronics Co., Ltd. | Voltage stabilization device and semiconductor device including the same, and voltage generation method |
US9035629B2 (en) * | 2011-04-29 | 2015-05-19 | Freescale Semiconductor, Inc. | Voltage regulator with different inverting gain stages |
CN102541133A (zh) * | 2011-05-11 | 2012-07-04 | 电子科技大学 | 一种全温度范围补偿的电压基准源 |
CN102289243B (zh) * | 2011-06-30 | 2013-06-12 | 西安电子科技大学 | Cmos带隙基准源 |
US8937508B2 (en) * | 2011-11-02 | 2015-01-20 | Marvell World Trade Ltd. | Differential amplifier |
JP5749299B2 (ja) * | 2013-07-18 | 2015-07-15 | ラピスセミコンダクタ株式会社 | 半導体メモリの基準電位発生回路及び半導体メモリ |
CN103809646B (zh) * | 2014-03-07 | 2015-07-08 | 上海华虹宏力半导体制造有限公司 | 分压电路及其控制方法 |
US9966119B1 (en) * | 2016-10-31 | 2018-05-08 | SK Hynix Inc. | Reference selection circuit |
CN109274362A (zh) * | 2018-12-03 | 2019-01-25 | 上海艾为电子技术股份有限公司 | 控制电路 |
WO2021007299A1 (en) * | 2019-07-08 | 2021-01-14 | Eta Wireless, Inc. | Multi-output supply generator for rf power amplifiers with differential capacitive energy transfer |
CN111710351B (zh) * | 2020-05-18 | 2022-05-10 | 中国人民武装警察部队海警学院 | 支持差分放大和单端放大两种功能的灵敏放大电路 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1233812A (it) * | 1969-05-16 | 1971-06-03 | ||
JP2592234B2 (ja) * | 1985-08-16 | 1997-03-19 | 富士通株式会社 | 半導体装置 |
JPH0770216B2 (ja) * | 1985-11-22 | 1995-07-31 | 株式会社日立製作所 | 半導体集積回路 |
JP2721151B2 (ja) * | 1986-04-01 | 1998-03-04 | 株式会社東芝 | 半導体集積回路装置 |
JPH083766B2 (ja) * | 1986-05-31 | 1996-01-17 | 株式会社東芝 | 半導体集積回路の電源電圧降下回路 |
JPS6370451A (ja) * | 1986-09-11 | 1988-03-30 | Mitsubishi Electric Corp | 半導体集積回路 |
-
1990
- 1990-09-29 KR KR1019900015678A patent/KR930009148B1/ko not_active IP Right Cessation
- 1990-11-20 JP JP2312991A patent/JPH07101374B2/ja not_active Expired - Fee Related
- 1990-11-22 DE DE4037206A patent/DE4037206C2/de not_active Expired - Fee Related
- 1990-11-26 FR FR9014734A patent/FR2667409B1/fr not_active Expired - Fee Related
- 1990-12-03 CN CN90109627A patent/CN1044412C/zh not_active Expired - Lifetime
- 1990-12-05 RU SU904831913A patent/RU1838814C/ru active
- 1990-12-31 US US07/636,509 patent/US5077518A/en not_active Expired - Lifetime
-
1991
- 1991-03-20 NL NL9100497A patent/NL193038C/nl not_active IP Right Cessation
- 1991-06-05 GB GB9112078A patent/GB2248357B/en not_active Expired - Lifetime
- 1991-09-27 IT ITRM910727A patent/IT1250783B/it active IP Right Grant
-
1997
- 1997-03-27 HK HK36197A patent/HK36197A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
GB2248357B (en) | 1994-07-06 |
DE4037206C2 (de) | 1995-08-10 |
CN1044412C (zh) | 1999-07-28 |
ITRM910727A1 (it) | 1992-03-30 |
RU1838814C (ru) | 1993-08-30 |
JPH04145509A (ja) | 1992-05-19 |
NL193038B (nl) | 1998-04-01 |
FR2667409B1 (fr) | 1993-07-16 |
FR2667409A1 (fr) | 1992-04-03 |
NL9100497A (nl) | 1992-04-16 |
JPH07101374B2 (ja) | 1995-11-01 |
KR920007339A (ko) | 1992-04-28 |
GB9112078D0 (en) | 1991-07-24 |
KR930009148B1 (ko) | 1993-09-23 |
DE4037206A1 (de) | 1992-04-09 |
HK36197A (en) | 1997-04-04 |
ITRM910727A0 (it) | 1991-09-27 |
CN1051438A (zh) | 1991-05-15 |
US5077518A (en) | 1991-12-31 |
NL193038C (nl) | 1998-08-04 |
GB2248357A (en) | 1992-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970829 |