IT1251097B - Circuito di bootstrap per il pilotaggio di un transistore mos di potenza in configurazione high side driver. - Google Patents

Circuito di bootstrap per il pilotaggio di un transistore mos di potenza in configurazione high side driver.

Info

Publication number
IT1251097B
IT1251097B ITMI912045A ITMI912045A IT1251097B IT 1251097 B IT1251097 B IT 1251097B IT MI912045 A ITMI912045 A IT MI912045A IT MI912045 A ITMI912045 A IT MI912045A IT 1251097 B IT1251097 B IT 1251097B
Authority
IT
Italy
Prior art keywords
high side
mos transistor
side driver
piloting
bootstrap circuit
Prior art date
Application number
ITMI912045A
Other languages
English (en)
Inventor
Michele Zisa
Massimiliano Belluso
Mario Paparo
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITMI912045A priority Critical patent/IT1251097B/it
Publication of ITMI912045A0 publication Critical patent/ITMI912045A0/it
Priority to EP92202198A priority patent/EP0525869B1/en
Priority to DE69226004T priority patent/DE69226004T2/de
Priority to US07/918,440 priority patent/US5381044A/en
Priority to JP19823192A priority patent/JP3528854B2/ja
Publication of ITMI912045A1 publication Critical patent/ITMI912045A1/it
Application granted granted Critical
Publication of IT1251097B publication Critical patent/IT1251097B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back

Abstract

In un circuito di bootstrap per transistore MOS di potenza in configurazione high side driver, comprendente una prima capacità (C1) caricabile ad una prima tensione funzione della tensione di alimentazione del transistore di potenza (T1), è presente una seconda capacità (C2) combinata con la prima capacità (C1) in modo da rendere disponibile una seconda tensione superiore alla prima tensione e alla tensione di soglia del transistore di potenza (T1).(Fig. 1).
ITMI912045A 1991-07-24 1991-07-24 Circuito di bootstrap per il pilotaggio di un transistore mos di potenza in configurazione high side driver. IT1251097B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
ITMI912045A IT1251097B (it) 1991-07-24 1991-07-24 Circuito di bootstrap per il pilotaggio di un transistore mos di potenza in configurazione high side driver.
EP92202198A EP0525869B1 (en) 1991-07-24 1992-07-17 Bootstrap circuit for driving a power MOS transistor in pull-up mode
DE69226004T DE69226004T2 (de) 1991-07-24 1992-07-17 Bootstrapschaltung zum Treiben von einem Leistungs-MOS-Transistor in einem Erhöhungsmode
US07/918,440 US5381044A (en) 1991-07-24 1992-07-22 Bootstrap circuit for driving a power MOS transistor
JP19823192A JP3528854B2 (ja) 1991-07-24 1992-07-24 電力ｍｏｓトランジスタを高電位側駆動構成において駆動するためのブートストラップ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI912045A IT1251097B (it) 1991-07-24 1991-07-24 Circuito di bootstrap per il pilotaggio di un transistore mos di potenza in configurazione high side driver.

Publications (3)

Publication Number Publication Date
ITMI912045A0 ITMI912045A0 (it) 1991-07-24
ITMI912045A1 ITMI912045A1 (it) 1993-01-25
IT1251097B true IT1251097B (it) 1995-05-04

Family

ID=11360419

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI912045A IT1251097B (it) 1991-07-24 1991-07-24 Circuito di bootstrap per il pilotaggio di un transistore mos di potenza in configurazione high side driver.

Country Status (5)

Country Link
US (1) US5381044A (it)
EP (1) EP0525869B1 (it)
JP (1) JP3528854B2 (it)
DE (1) DE69226004T2 (it)
IT (1) IT1251097B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726594A (en) * 1995-10-02 1998-03-10 Siliconix Incorporated Switching device including power MOSFET with internal power supply circuit
JP3607033B2 (ja) * 1997-03-31 2005-01-05 三菱電機株式会社 半導体装置
DE19728283A1 (de) * 1997-07-02 1999-01-07 Siemens Ag Ansteuerschaltung für ein steuerbares Halbleiterbauelement
US6169431B1 (en) 1998-06-02 2001-01-02 Infineon Technologies Ag Drive circuit for a controllable semiconductor component
DE19929728B4 (de) * 1999-06-29 2015-08-06 Infineon Technologies Ag Schaltungsanordnung zur Ansteuerung eines Motors
US6798269B2 (en) * 2000-07-25 2004-09-28 Stmicroelectronics S.R.L. Bootstrap circuit in DC/DC static converters
US7129678B2 (en) * 2002-01-25 2006-10-31 Victory Industrial Corporation High voltage generator using inductor-based charge pump for automotive alternator voltage regulator
US6781422B1 (en) 2003-09-17 2004-08-24 System General Corp. Capacitive high-side switch driver for a power converter
US6836173B1 (en) * 2003-09-24 2004-12-28 System General Corp. High-side transistor driver for power converters
US7405595B2 (en) * 2005-11-16 2008-07-29 System General Corp. High-side transistor driver having positive feedback for improving speed and power saving
US8044685B2 (en) * 2006-06-12 2011-10-25 System General Corp. Floating driving circuit

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4049979A (en) * 1976-08-24 1977-09-20 National Semiconductor Corporation Multi-bootstrap driver circuit
JPS56129570A (en) * 1980-03-14 1981-10-09 Mitsubishi Electric Corp Booster circuit
US4484092A (en) * 1982-03-22 1984-11-20 Motorola, Inc. MOS Driver circuit having capacitive voltage boosting
JPS58184821A (ja) * 1982-03-31 1983-10-28 Fujitsu Ltd 昇圧回路
JPS5922444A (ja) * 1982-07-28 1984-02-04 Nec Corp 駆動回路
JPS5958920A (ja) * 1982-09-28 1984-04-04 Fujitsu Ltd バツフア回路
EP0126788B1 (de) * 1983-05-27 1987-06-03 Deutsche ITT Industries GmbH MOS-Bootstrap-Gegentaktstufe
US4680488A (en) * 1983-06-15 1987-07-14 Nec Corporation MOSFET-type driving circuit with capacitive bootstrapping for driving a large capacitive load at high speed
DE3329093A1 (de) * 1983-08-11 1985-02-28 Siemens AG, 1000 Berlin und 8000 München Dynamischer mos-schaltkreis
JPS61260717A (ja) * 1985-05-14 1986-11-18 Mitsubishi Electric Corp 半導体昇圧信号発生回路
US4906056A (en) * 1987-04-14 1990-03-06 Mitsubishi Denki Kabushiki Kaisha High speed booster circuit
JPS641323A (en) * 1987-06-24 1989-01-05 Hitachi Ltd Switching regulator
IT1221251B (it) * 1988-02-25 1990-06-27 Sgs Thomson Microelectronics Circuito mos per il pilotaggio di un carico dal lato alto della alimentazione
IT1227561B (it) * 1988-11-07 1991-04-16 Sgs Thomson Microelectronics Dispositivo circuitale, a ridotto numero di componenti, per l'accensione simultanea di una pluralita' di transistori di potenza

Also Published As

Publication number Publication date
ITMI912045A1 (it) 1993-01-25
ITMI912045A0 (it) 1991-07-24
EP0525869A1 (en) 1993-02-03
DE69226004D1 (de) 1998-07-30
DE69226004T2 (de) 1999-02-11
US5381044A (en) 1995-01-10
EP0525869B1 (en) 1998-06-24
JPH05252006A (ja) 1993-09-28
JP3528854B2 (ja) 2004-05-24

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970730