IT1258344B - Circuito di generazione di tensione di riferimento. - Google Patents
Circuito di generazione di tensione di riferimento.Info
- Publication number
- IT1258344B IT1258344B ITRM920026A ITRM920026A IT1258344B IT 1258344 B IT1258344 B IT 1258344B IT RM920026 A ITRM920026 A IT RM920026A IT RM920026 A ITRM920026 A IT RM920026A IT 1258344 B IT1258344 B IT 1258344B
- Authority
- IT
- Italy
- Prior art keywords
- band gap
- reference voltage
- circuit
- reference circuit
- voltage
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Control Of Electrical Variables (AREA)
Abstract
Viene illustrato un circuito di caduta di tensione interno in grado di ridurre una tensione di alimentazione esterna ad un valore dato, in particolare comprendente un circuito di riferimento del tipo "band gap". Inserendo un pozzo 39 N che riceve una tensione costante tra un resistore del circuito di riferimento a band gap ed un substrato semiconduttore, collegando un condensatore 33 di condensazione in frequenza tra un nodo 21 di uscita del circuito di riferimento band gap e la base di un transistore di uscita 32, oppure includendo un filtro 36 passabasso costituito da un resistere 34 collegato in serie ad un terminale di tensione di riferimento VREF del circuito di riferimento a band gap, ed un condensatore 35 collegato in serie tra il terminale di tensione di riferimento VREF ed il terminale di tensione di massa, il circuito di generazione di tensione di riferimento secondo la presente invenzione, produce una tensione di riferimento stabile non influenzata da rumore del substrato, con minimizzazione del consumo di corrente del circuito di riferimento a band gap.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910010193A KR930001577A (ko) | 1991-06-19 | 1991-06-19 | 기준전압 발생회로 |
Publications (3)
Publication Number | Publication Date |
---|---|
ITRM920026A0 ITRM920026A0 (it) | 1992-01-16 |
ITRM920026A1 ITRM920026A1 (it) | 1993-07-16 |
IT1258344B true IT1258344B (it) | 1996-02-26 |
Family
ID=19316014
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITRM920026A IT1258344B (it) | 1991-06-19 | 1992-01-16 | Circuito di generazione di tensione di riferimento. |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPH04373158A (it) |
KR (1) | KR930001577A (it) |
DE (1) | DE4139163A1 (it) |
FR (1) | FR2678081A1 (it) |
GB (1) | GB2256949A (it) |
IT (1) | IT1258344B (it) |
TW (1) | TW208097B (it) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR940007298B1 (ko) * | 1992-05-30 | 1994-08-12 | 삼성전자 주식회사 | Cmos트랜지스터를 사용한 기준전압 발생회로 |
KR970010284B1 (en) * | 1993-12-18 | 1997-06-23 | Samsung Electronics Co Ltd | Internal voltage generator of semiconductor integrated circuit |
DE19618914C1 (de) * | 1996-05-10 | 1997-08-14 | Siemens Ag | Schaltungsanordnung zur Erzeugung eines Referenzpotentials |
KR100333547B1 (ko) * | 1999-06-29 | 2002-04-24 | 박종섭 | 기준전압 발생기 |
DE10211912B4 (de) | 2002-03-18 | 2004-02-05 | Infineon Technologies Ag | Integrierter Schaltkreis und Verfahren zum Steuern einer Stromversorgung desselben |
DE102011089402B4 (de) * | 2011-04-28 | 2015-07-16 | Zentrum Mikroelektronik Dresden Ag | Anordnung und Verfahren zur Erzeugung einer Ausgangsspannung |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5849449B2 (ja) * | 1977-08-03 | 1983-11-04 | 大和製罐株式会社 | 空気流による物体搬送方法 |
US4277739A (en) * | 1979-06-01 | 1981-07-07 | National Semiconductor Corporation | Fixed voltage reference circuit |
JPS6089956A (ja) * | 1983-10-24 | 1985-05-20 | Toshiba Corp | 半導体装置 |
US4553083A (en) * | 1983-12-01 | 1985-11-12 | Advanced Micro Devices, Inc. | Bandgap reference voltage generator with VCC compensation |
JPS60229125A (ja) * | 1984-04-26 | 1985-11-14 | Toshiba Corp | 電圧出力回路 |
JPS6132565A (ja) * | 1984-07-25 | 1986-02-15 | Nec Corp | Mos集積回路 |
JPS61172364A (ja) * | 1985-09-27 | 1986-08-04 | Nec Corp | 定電圧回路を形成した半導体装置 |
US4795918A (en) * | 1987-05-01 | 1989-01-03 | Fairchild Semiconductor Corporation | Bandgap voltage reference circuit with an npn current bypass circuit |
US4849933A (en) * | 1987-05-06 | 1989-07-18 | Advanced Micro Devices, Inc. | Bipolar programmable logic array |
US4795961A (en) * | 1987-06-10 | 1989-01-03 | Unitrode Corporation | Low-noise voltage reference |
JPS6455623A (en) * | 1987-08-27 | 1989-03-02 | Fujitsu Ltd | Reference voltage generating circuit |
US4906863A (en) * | 1988-02-29 | 1990-03-06 | Texas Instruments Incorporated | Wide range power supply BiCMOS band-gap reference voltage circuit |
DE4005756A1 (de) * | 1989-04-01 | 1990-10-04 | Bosch Gmbh Robert | Praezisions-referenzspannungsquelle |
-
1991
- 1991-06-19 KR KR1019910010193A patent/KR930001577A/ko not_active IP Right Cessation
- 1991-10-05 TW TW080107867A patent/TW208097B/zh active
- 1991-10-11 JP JP3263700A patent/JPH04373158A/ja active Pending
- 1991-10-16 FR FR9112742A patent/FR2678081A1/fr active Pending
- 1991-11-15 GB GB9124287A patent/GB2256949A/en not_active Withdrawn
- 1991-11-28 DE DE4139163A patent/DE4139163A1/de not_active Ceased
-
1992
- 1992-01-16 IT ITRM920026A patent/IT1258344B/it active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
DE4139163A1 (de) | 1992-12-24 |
TW208097B (it) | 1993-06-21 |
GB2256949A (en) | 1992-12-23 |
FR2678081A1 (fr) | 1992-12-24 |
GB9124287D0 (en) | 1992-01-08 |
ITRM920026A0 (it) | 1992-01-16 |
JPH04373158A (ja) | 1992-12-25 |
KR930001577A (ko) | 1993-01-16 |
ITRM920026A1 (it) | 1993-07-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted |