TW208097B - - Google Patents
Info
- Publication number
- TW208097B TW208097B TW080107867A TW80107867A TW208097B TW 208097 B TW208097 B TW 208097B TW 080107867 A TW080107867 A TW 080107867A TW 80107867 A TW80107867 A TW 80107867A TW 208097 B TW208097 B TW 208097B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Control Of Electrical Variables (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910010193A KR930001577A (ko) | 1991-06-19 | 1991-06-19 | 기준전압 발생회로 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW208097B true TW208097B (zh) | 1993-06-21 |
Family
ID=19316014
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW080107867A TW208097B (zh) | 1991-06-19 | 1991-10-05 |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPH04373158A (zh) |
KR (1) | KR930001577A (zh) |
DE (1) | DE4139163A1 (zh) |
FR (1) | FR2678081A1 (zh) |
GB (1) | GB2256949A (zh) |
IT (1) | IT1258344B (zh) |
TW (1) | TW208097B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR940007298B1 (ko) * | 1992-05-30 | 1994-08-12 | 삼성전자 주식회사 | Cmos트랜지스터를 사용한 기준전압 발생회로 |
KR970010284B1 (en) * | 1993-12-18 | 1997-06-23 | Samsung Electronics Co Ltd | Internal voltage generator of semiconductor integrated circuit |
DE19618914C1 (de) * | 1996-05-10 | 1997-08-14 | Siemens Ag | Schaltungsanordnung zur Erzeugung eines Referenzpotentials |
KR100333547B1 (ko) * | 1999-06-29 | 2002-04-24 | 박종섭 | 기준전압 발생기 |
DE10211912B4 (de) | 2002-03-18 | 2004-02-05 | Infineon Technologies Ag | Integrierter Schaltkreis und Verfahren zum Steuern einer Stromversorgung desselben |
DE102011089402B4 (de) * | 2011-04-28 | 2015-07-16 | Zentrum Mikroelektronik Dresden Ag | Anordnung und Verfahren zur Erzeugung einer Ausgangsspannung |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5849449B2 (ja) * | 1977-08-03 | 1983-11-04 | 大和製罐株式会社 | 空気流による物体搬送方法 |
US4277739A (en) * | 1979-06-01 | 1981-07-07 | National Semiconductor Corporation | Fixed voltage reference circuit |
JPS6089956A (ja) * | 1983-10-24 | 1985-05-20 | Toshiba Corp | 半導体装置 |
US4553083A (en) * | 1983-12-01 | 1985-11-12 | Advanced Micro Devices, Inc. | Bandgap reference voltage generator with VCC compensation |
JPS60229125A (ja) * | 1984-04-26 | 1985-11-14 | Toshiba Corp | 電圧出力回路 |
JPS6132565A (ja) * | 1984-07-25 | 1986-02-15 | Nec Corp | Mos集積回路 |
JPS61172364A (ja) * | 1985-09-27 | 1986-08-04 | Nec Corp | 定電圧回路を形成した半導体装置 |
US4795918A (en) * | 1987-05-01 | 1989-01-03 | Fairchild Semiconductor Corporation | Bandgap voltage reference circuit with an npn current bypass circuit |
US4849933A (en) * | 1987-05-06 | 1989-07-18 | Advanced Micro Devices, Inc. | Bipolar programmable logic array |
US4795961A (en) * | 1987-06-10 | 1989-01-03 | Unitrode Corporation | Low-noise voltage reference |
JPS6455623A (en) * | 1987-08-27 | 1989-03-02 | Fujitsu Ltd | Reference voltage generating circuit |
US4906863A (en) * | 1988-02-29 | 1990-03-06 | Texas Instruments Incorporated | Wide range power supply BiCMOS band-gap reference voltage circuit |
DE4005756A1 (de) * | 1989-04-01 | 1990-10-04 | Bosch Gmbh Robert | Praezisions-referenzspannungsquelle |
-
1991
- 1991-06-19 KR KR1019910010193A patent/KR930001577A/ko not_active IP Right Cessation
- 1991-10-05 TW TW080107867A patent/TW208097B/zh active
- 1991-10-11 JP JP3263700A patent/JPH04373158A/ja active Pending
- 1991-10-16 FR FR9112742A patent/FR2678081A1/fr active Pending
- 1991-11-15 GB GB9124287A patent/GB2256949A/en not_active Withdrawn
- 1991-11-28 DE DE4139163A patent/DE4139163A1/de not_active Ceased
-
1992
- 1992-01-16 IT ITRM920026A patent/IT1258344B/it active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
GB2256949A (en) | 1992-12-23 |
GB9124287D0 (en) | 1992-01-08 |
ITRM920026A1 (it) | 1993-07-16 |
FR2678081A1 (fr) | 1992-12-24 |
IT1258344B (it) | 1996-02-26 |
ITRM920026A0 (it) | 1992-01-16 |
KR930001577A (ko) | 1993-01-16 |
DE4139163A1 (de) | 1992-12-24 |
JPH04373158A (ja) | 1992-12-25 |