DE3582697D1
(de)
*
|
1984-06-07 |
1991-06-06 |
Hoechst Ag |
Positiv arbeitende strahlungsempfindliche beschichtungsloesung.
|
DE3421160A1
(de)
*
|
1984-06-07 |
1985-12-12 |
Hoechst Ag, 6230 Frankfurt |
Positiv arbeitende strahlungsempfindliche beschichtungsloesung
|
US4550069A
(en)
*
|
1984-06-11 |
1985-10-29 |
American Hoechst Corporation |
Positive photoresist compositions with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
|
US5143814A
(en)
*
|
1984-06-11 |
1992-09-01 |
Hoechst Celanese Corporation |
Positive photoresist compositions with o-quinone diazide, novolak and propylene glycol alkyl ether acetate
|
US5066561A
(en)
*
|
1984-06-11 |
1991-11-19 |
Hoechst Celanese Corporation |
Method for producing and using a positive photoresist with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
|
CA1254432A
(en)
*
|
1984-12-28 |
1989-05-23 |
Conrad G. Houle |
High-temperature resistant, selectively developable positive-working resist
|
US4885232A
(en)
*
|
1985-03-11 |
1989-12-05 |
Hoechst Celanese Corporation |
High temperature post exposure baking treatment for positive photoresist compositions
|
ATE47631T1
(de)
*
|
1985-03-11 |
1989-11-15 |
Hoechst Celanese Corp |
Verfahren zum herstellen von photoresiststrukturen.
|
JPH07109510B2
(ja)
*
|
1985-04-02 |
1995-11-22 |
三菱化学株式会社 |
ポジ型フォトレジスト組成物
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JPS61241745A
(ja)
*
|
1985-04-18 |
1986-10-28 |
Oki Electric Ind Co Ltd |
ネガ型フオトレジスト組成物及びレジストパタ−ン形成方法
|
JPH0766183B2
(ja)
*
|
1985-05-15 |
1995-07-19 |
三菱化学株式会社 |
ポジ型フオトレジスト組成物
|
DE3662952D1
(en)
*
|
1985-08-12 |
1989-05-24 |
Hoechst Celanese Corp |
Process for obtaining negative images from positive photoresists
|
US5217840A
(en)
*
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1985-08-12 |
1993-06-08 |
Hoechst Celanese Corporation |
Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
|
US5256522A
(en)
*
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1985-08-12 |
1993-10-26 |
Hoechst Celanese Corporation |
Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
|
US4929536A
(en)
*
|
1985-08-12 |
1990-05-29 |
Hoechst Celanese Corporation |
Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
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US4931381A
(en)
*
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1985-08-12 |
1990-06-05 |
Hoechst Celanese Corporation |
Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment
|
DE3664824D1
(en)
*
|
1985-10-25 |
1989-09-07 |
Hoechst Celanese Corp |
Process for producing a positive photoresist
|
ATE56545T1
(de)
*
|
1985-10-28 |
1990-09-15 |
Hoechst Celanese Corp |
Strahlungsempfindliches, positiv-arbeitendes gemisch und hieraus hergestelltes photoresistmaterial.
|
DE3667109D1
(en)
*
|
1985-10-28 |
1989-12-28 |
Hoechst Celanese Corp |
Liquid for the treatment of a photoresist composition, and process therefor
|
CA1308596C
(en)
*
|
1986-01-13 |
1992-10-13 |
Rohm And Haas Company |
Microplastic structures and method of manufacture
|
CA1307695C
(en)
*
|
1986-01-13 |
1992-09-22 |
Wayne Edmund Feely |
Photosensitive compounds and thermally stable and aqueous developablenegative images
|
JPS62194249A
(ja)
*
|
1986-02-20 |
1987-08-26 |
Fuji Photo Film Co Ltd |
ポジ型感光性組成物
|
DE3634371A1
(de)
*
|
1986-10-09 |
1988-04-21 |
Hoechst Ag |
Lichtempfindliches gemisch und hieraus hergestelltes lichtempfindliches kopiermaterial
|
US4863827A
(en)
*
|
1986-10-20 |
1989-09-05 |
American Hoechst Corporation |
Postive working multi-level photoresist
|
EP0288533A4
(en)
*
|
1986-10-20 |
1989-02-06 |
Macdermid Inc |
IMAGE INVERSION METHOD AND SYSTEM.
|
NL8700421A
(nl)
*
|
1987-02-20 |
1988-09-16 |
Philips Nv |
Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
|
DE3711263A1
(de)
*
|
1987-04-03 |
1988-10-13 |
Hoechst Ag |
Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung von druckformen
|
DE3711264A1
(de)
*
|
1987-04-03 |
1988-10-13 |
Hoechst Ag |
Lichtempfindliches gemisch und hieraus hergestelltes lichtempfindliches kopiermaterial
|
DE3725949A1
(de)
*
|
1987-08-05 |
1989-02-16 |
Hoechst Ag |
Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung von negativen reliefkopien
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US5240807A
(en)
*
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1987-08-20 |
1993-08-31 |
Hoechst Celanese Corporation |
Photoresist article having a portable, conformable, built-on mask
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US4873176A
(en)
*
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1987-08-28 |
1989-10-10 |
Shipley Company Inc. |
Reticulation resistant photoresist coating
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DE3735852A1
(de)
*
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1987-10-23 |
1989-05-03 |
Hoechst Ag |
Positiv arbeitendes lichtempfindliches gemisch, enthaltend einen farbstoff, und daraus hergestelltes positiv arbeitendes lichtempfindliches aufzeichnungsmaterial
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EP0345305A4
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1987-12-10 |
1991-10-02 |
Macdermid Incorporated |
Image-reversible dry-film photoresists
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DE3812326A1
(de)
*
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1988-04-14 |
1989-10-26 |
Basf Ag |
Positiv arbeitendes, strahlungsempfindliches gemisch auf basis von saeurespaltbaren und photochemisch saeurebildenden verbindungen und verfahren zur herstellung von reliefmustern und reliefbildern
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JPH01293340A
(ja)
*
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1988-05-20 |
1989-11-27 |
Japan Synthetic Rubber Co Ltd |
感放射線性樹脂組成物
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DE3821584A1
(de)
*
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1988-06-25 |
1989-12-28 |
Hoechst Ag |
Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichungsmaterial fuer hochenergetische strahlung
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US5079131A
(en)
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1988-08-29 |
1992-01-07 |
Shipley Company Inc. |
Method of forming positive images through organometallic treatment of negative acid hardening cross-linked photoresist formulations
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KR900005226A
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1988-09-29 |
1990-04-13 |
윌리엄 비이 해리스 |
감광성 조성물 및 양화 상과 음화 상의 생성방법
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GB8822956D0
(en)
*
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1988-09-30 |
1988-11-09 |
Cookson Graphics Plc |
Baking treatment of lithographic printing plate
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JP2505033B2
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1988-11-28 |
1996-06-05 |
東京応化工業株式会社 |
電子線レジスト組成物及びそれを用いた微細パタ―ンの形成方法
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JP2583600B2
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1989-02-20 |
1997-02-19 |
東京応化工業株式会社 |
ネガ型電子線レジスト組成物
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DE3907953A1
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1989-03-11 |
1990-09-13 |
Hoechst Ag |
Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
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JP2661671B2
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1989-03-20 |
1997-10-08 |
株式会社日立製作所 |
パタン形成材料とそれを用いたパタン形成方法
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JPH02254450A
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1989-03-29 |
1990-10-15 |
Toshiba Corp |
レジスト
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1989-05-22 |
1993-05-11 |
Shipley Company Inc. |
Photoresist and method for forming a relief image utilizing composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
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US5128232A
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1989-05-22 |
1992-07-07 |
Shiply Company Inc. |
Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
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FR2648468B1
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1989-05-30 |
1992-12-04 |
Commissariat Energie Atomique |
Composition de resine sensible aux rayonnements uv et aux electrons
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1989-06-20 |
1995-02-21 |
Rohm And Haas Company |
Method of using selected photoactive compounds in high resolution, acid hardening photoresists with near ultraviolet radiation wherein the photoresist comprise conventional deep UV photoacid generators
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CA2019693A1
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1989-07-07 |
1991-01-07 |
Karen Ann Graziano |
Acid-hardening photoresists of improved sensitivity
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1989-10-17 |
1993-05-18 |
Shipley Company Inc. |
Near UV photoresist
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DE69032077T2
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1989-10-17 |
1998-12-03 |
Shipley Co., Inc., Newton, Mass. |
Fotoresist für nahes U.V.
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JPH03142918A
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1989-10-30 |
1991-06-18 |
Matsushita Electron Corp |
レジストパターン形成方法
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1989-12-01 |
1993-02-02 |
Tosoh Corporation |
Positive photosensitive composition for forming lenses containing 1,2-naphthoquinone diazide sulfonate photosensitizer, alkali-soluble resin and thermosetting agent and process for producing the composition
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DE4006190A1
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1990-02-28 |
1991-08-29 |
Hoechst Ag |
Negativ arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
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TW207009B
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1991-01-31 |
1993-06-01 |
Sumitomo Chemical Co |
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1991-04-20 |
1992-10-22 |
Hoechst Ag |
Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
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DE4112974A1
(de)
*
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1991-04-20 |
1992-10-22 |
Hoechst Ag |
Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
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DE4112972A1
(de)
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1991-04-20 |
1992-10-22 |
Hoechst Ag |
Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
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DE4120174A1
(de)
*
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1991-06-19 |
1992-12-24 |
Hoechst Ag |
Strahlungsempfindliche sulfonsaeureester und deren verwendung
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DE4125042A1
(de)
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1991-07-29 |
1993-02-04 |
Hoechst Ag |
Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
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1991-08-02 |
1994-03-08 |
Mitsubishi Kasei Corporation |
Negative photosensitive composition and method for forming a resist pattern
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1991-08-27 |
1994-02-15 |
Mitsubishi Kasei Corporation |
Negative photosensitive composition and method for forming a resist pattern by means thereof
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1991-11-15 |
2000-12-26 |
Shipley Company, L.L.C. |
Antihalation compositions
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JPH05341522A
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1992-06-09 |
1993-12-24 |
Fuji Photo Film Co Ltd |
ネガ型フオトレジスト組成物
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JPH0643637A
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1992-07-23 |
1994-02-18 |
Sumitomo Chem Co Ltd |
パターンの保持方法
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JPH0667413A
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1992-08-20 |
1994-03-11 |
Sumitomo Chem Co Ltd |
ネガ型フォトレジスト組成物
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TW288112B
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1993-06-02 |
1996-10-11 |
Sumitomo Chemical Co |
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1995-12-05 |
1999-03-09 |
Shipley Company, L.L.C. |
Chemically amplified positive photoresists
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1996-09-16 |
2001-02-20 |
International Business Machines Corporation |
Low “K” factor hybrid photoresist
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1999-08-25 |
2002-09-24 |
Tokyo Ohka Kogyo Co., Ltd. |
Multilayered body for photolithographic patterning
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EP1469346B1
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2002-01-23 |
2015-08-05 |
JSR Corporation |
Positive photosensitive insulating resin composition and cured object obtained therefrom
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2004-07-02 |
2010-03-21 |
Rohm & Haas Elect Mat |
Method for processing a photoresist composition in an immersion photolithography process and system and organic barrier composition used therein
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2005-08-29 |
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Rohm and Haas Electronic Materials, L.L.C. |
Coating compositions for use with an overcoated photoresist
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用於光微影之組成物及製程
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2006-10-30 |
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Electronic device manufacture
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