HK1046423A1 - 抛光系统及其使用方法 - Google Patents

抛光系统及其使用方法 Download PDF

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Publication number
HK1046423A1
HK1046423A1 HK02108003.6A HK02108003A HK1046423A1 HK 1046423 A1 HK1046423 A1 HK 1046423A1 HK 02108003 A HK02108003 A HK 02108003A HK 1046423 A1 HK1046423 A1 HK 1046423A1
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HK
Hong Kong
Prior art keywords
polishing
acids
group
substrate
acid
Prior art date
Application number
HK02108003.6A
Other languages
English (en)
Chinese (zh)
Inventor
王淑敏
弗拉斯塔‧布鲁西克考夫曼
史蒂文‧K‧梅鲁姆宾
弗拉斯塔‧布魯西克考夫曼
周仁杰
艾萨克‧K‧彻里安
史蒂文‧K‧梅魯姆賓
艾薩克‧K‧徹里安
Original Assignee
卡伯特微电子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡伯特微电子公司 filed Critical 卡伯特微电子公司
Publication of HK1046423A1 publication Critical patent/HK1046423A1/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
HK02108003.6A 1999-08-13 2000-08-10 抛光系统及其使用方法 HK1046423A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14881399P 1999-08-13 1999-08-13
US60/148,813 1999-08-13
PCT/US2000/021938 WO2001012740A1 (en) 1999-08-13 2000-08-10 Polishing system and method of its use

Publications (1)

Publication Number Publication Date
HK1046423A1 true HK1046423A1 (zh) 2003-01-10

Family

ID=22527505

Family Applications (2)

Application Number Title Priority Date Filing Date
HK02108003.6A HK1046423A1 (zh) 1999-08-13 2000-08-10 抛光系统及其使用方法
HK02108002.7A HK1046422A1 (zh) 1999-08-13 2000-08-10 含有阻化化合物的抛光系统及其使用方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
HK02108002.7A HK1046422A1 (zh) 1999-08-13 2000-08-10 含有阻化化合物的抛光系统及其使用方法

Country Status (14)

Country Link
US (1) US6852632B2 (https=)
EP (3) EP1226220B1 (https=)
JP (5) JP4188598B2 (https=)
KR (2) KR100590666B1 (https=)
CN (2) CN100368496C (https=)
AT (2) ATE292167T1 (https=)
AU (2) AU6537000A (https=)
CA (2) CA2378790A1 (https=)
DE (2) DE60019142T2 (https=)
HK (2) HK1046423A1 (https=)
IL (2) IL147234A0 (https=)
MY (2) MY129591A (https=)
TW (2) TW500784B (https=)
WO (2) WO2001012740A1 (https=)

Families Citing this family (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6503418B2 (en) * 1999-11-04 2003-01-07 Advanced Micro Devices, Inc. Ta barrier slurry containing an organic additive
US6976905B1 (en) 2000-06-16 2005-12-20 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system
US20020098784A1 (en) * 2001-01-19 2002-07-25 Saket Chadda Abrasive free polishing in copper damascene applications
JP4231632B2 (ja) 2001-04-27 2009-03-04 花王株式会社 研磨液組成物
KR100535074B1 (ko) * 2001-06-26 2005-12-07 주식회사 하이닉스반도체 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정
US20030003747A1 (en) * 2001-06-29 2003-01-02 Jae Hong Kim Chemical mechanical polishing slurry for ruthenium titanium nitride and polishing process using the same
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
AU2002334406A1 (en) * 2001-09-03 2003-03-18 Showa Denko K.K. Polishing composition
US6805812B2 (en) * 2001-10-11 2004-10-19 Cabot Microelectronics Corporation Phosphono compound-containing polishing composition and method of using same
JP4095798B2 (ja) * 2001-12-20 2008-06-04 株式会社フジミインコーポレーテッド 研磨用組成物
US7004819B2 (en) * 2002-01-18 2006-02-28 Cabot Microelectronics Corporation CMP systems and methods utilizing amine-containing polymers
US7097541B2 (en) * 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US6755721B2 (en) 2002-02-22 2004-06-29 Saint-Gobain Ceramics And Plastics, Inc. Chemical mechanical polishing of nickel phosphorous alloys
KR101020613B1 (ko) * 2002-03-25 2011-03-09 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 탄탈 배리어 제거 용액
JP2004006628A (ja) * 2002-03-27 2004-01-08 Hitachi Ltd 半導体装置の製造方法
US7087187B2 (en) 2002-06-06 2006-08-08 Grumbine Steven K Meta oxide coated carbon black for CMP
KR100474537B1 (ko) * 2002-07-16 2005-03-10 주식회사 하이닉스반도체 산화막용 ｃｍｐ 슬러리 조성물 및 이를 이용한 반도체소자의 제조 방법
US6911393B2 (en) 2002-12-02 2005-06-28 Arkema Inc. Composition and method for copper chemical mechanical planarization
JP2004273547A (ja) * 2003-03-05 2004-09-30 Kao Corp 研磨速度選択比向上剤
US7306748B2 (en) * 2003-04-25 2007-12-11 Saint-Gobain Ceramics & Plastics, Inc. Methods for machining ceramics
US8025808B2 (en) 2003-04-25 2011-09-27 Saint-Gobain Ceramics & Plastics, Inc. Methods for machine ceramics
US7160807B2 (en) * 2003-06-30 2007-01-09 Cabot Microelectronics Corporation CMP of noble metals
KR100499642B1 (ko) * 2003-09-05 2005-07-05 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 제조 방법
US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US7241725B2 (en) * 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
JP4608196B2 (ja) * 2003-09-30 2011-01-05 株式会社フジミインコーポレーテッド 研磨用組成物
US7485162B2 (en) * 2003-09-30 2009-02-03 Fujimi Incorporated Polishing composition
US7022255B2 (en) 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
US7255810B2 (en) * 2004-01-09 2007-08-14 Cabot Microelectronics Corporation Polishing system comprising a highly branched polymer
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US7988878B2 (en) * 2004-09-29 2011-08-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier slurry for chemical mechanical polishing
JP4836441B2 (ja) * 2004-11-30 2011-12-14 花王株式会社 研磨液組成物
EP1710045B1 (en) * 2005-04-08 2008-12-17 Ohara Inc. A substrate and a method for polishing a substrate
CN100570827C (zh) * 2005-04-14 2009-12-16 三井化学株式会社 研磨材料浆及使用该浆料的研磨材料
US7316977B2 (en) * 2005-08-24 2008-01-08 Air Products And Chemicals, Inc. Chemical-mechanical planarization composition having ketooxime compounds and associated method for use
US7678702B2 (en) * 2005-08-31 2010-03-16 Air Products And Chemicals, Inc. CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
US8353740B2 (en) 2005-09-09 2013-01-15 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
US7708904B2 (en) 2005-09-09 2010-05-04 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
US20070068902A1 (en) * 2005-09-29 2007-03-29 Yasushi Matsunami Polishing composition and polishing method
US7955519B2 (en) * 2005-09-30 2011-06-07 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US7265055B2 (en) 2005-10-26 2007-09-04 Cabot Microelectronics Corporation CMP of copper/ruthenium substrates
CN1955212B (zh) * 2005-10-28 2011-08-03 安集微电子（上海）有限公司 用于阻挡层的化学机械抛光浆料
FR2896165B1 (fr) * 2006-01-13 2012-08-03 Centre Nat Rech Scient Preparation d'un substrat inorganique presentant des proprietes anti-microbiennes
KR20070088245A (ko) * 2006-02-24 2007-08-29 후지필름 가부시키가이샤 금속용 연마액
JP2007266075A (ja) * 2006-03-27 2007-10-11 Fujifilm Corp 金属用研磨液
JP2007266077A (ja) * 2006-03-27 2007-10-11 Fujifilm Corp 金属用研磨液
WO2007123203A1 (ja) * 2006-04-21 2007-11-01 Hitachi Chemical Co., Ltd. 酸化物粒子の製造方法、スラリー、研磨剤および基板の研磨方法
US7585340B2 (en) * 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
KR20090012309A (ko) * 2006-05-31 2009-02-03 아사히 가라스 가부시키가이샤 연마제 조성물 및 연마 방법
CN101130665A (zh) * 2006-08-25 2008-02-27 安集微电子（上海）有限公司 用于抛光低介电材料的抛光液
US7776230B2 (en) * 2006-08-30 2010-08-17 Cabot Microelectronics Corporation CMP system utilizing halogen adduct
CN101153205A (zh) * 2006-09-29 2008-04-02 安集微电子（上海）有限公司 用于抛光低介电材料的化学机械抛光液
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
TWI386468B (zh) 2006-12-20 2013-02-21 Saint Gobain Ceramics 加工無機非金屬工件之方法
US20080149884A1 (en) 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
JP2008177373A (ja) * 2007-01-18 2008-07-31 Nitta Haas Inc 研磨組成物
WO2008150038A1 (en) * 2007-06-08 2008-12-11 Techno Semichem Co., Ltd. Cmp slurry composition for copper damascene process
US7915071B2 (en) * 2007-08-30 2011-03-29 Dupont Air Products Nanomaterials, Llc Method for chemical mechanical planarization of chalcogenide materials
US7803711B2 (en) * 2007-09-18 2010-09-28 Cabot Microelectronics Corporation Low pH barrier slurry based on titanium dioxide
US20090090696A1 (en) * 2007-10-08 2009-04-09 Cabot Microelectronics Corporation Slurries for polishing oxide and nitride with high removal rates
WO2009054370A1 (ja) * 2007-10-23 2009-04-30 Hitachi Chemical Company, Ltd. Ｃｍｐ研磨液及びこれを用いた基板の研磨方法
EP2225175B1 (en) 2007-12-13 2012-12-12 Akzo Nobel N.V. Stabilized hydrogen peroxide solutions
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
EP2268765A4 (en) * 2008-03-07 2011-10-26 Advanced Tech Materials UNSELECTIVE OXIDIZE WET CLEANING AGENT AND USE
JP2008300858A (ja) * 2008-07-15 2008-12-11 Fujifilm Corp 金属用研磨液及び研磨方法
CN101333419B (zh) * 2008-08-05 2011-06-29 清华大学 一种集成电路铜布线的无磨粒化学机械抛光液
US20100081279A1 (en) * 2008-09-30 2010-04-01 Dupont Air Products Nanomaterials Llc Method for Forming Through-base Wafer Vias in Fabrication of Stacked Devices
US8506831B2 (en) * 2008-12-23 2013-08-13 Air Products And Chemicals, Inc. Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate
US9330703B2 (en) * 2009-06-04 2016-05-03 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous memory disks
US8025813B2 (en) 2009-11-12 2011-09-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
JP2013513023A (ja) * 2009-12-03 2013-04-18 ビーエーエスエフ ソシエタス・ヨーロピア 正のゼータ電位を有する防食顔料
US8916473B2 (en) 2009-12-14 2014-12-23 Air Products And Chemicals, Inc. Method for forming through-base wafer vias for fabrication of stacked devices
CN102101976A (zh) * 2009-12-18 2011-06-22 安集微电子（上海）有限公司 一种化学机械抛光液
CN102101978B (zh) * 2009-12-18 2014-07-23 安集微电子（上海）有限公司 一种化学机械抛光液
JP5657247B2 (ja) * 2009-12-25 2015-01-21 花王株式会社 研磨液組成物
JP6101421B2 (ja) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
TWI568541B (zh) * 2010-12-22 2017-02-01 Jsr Corp Chemical mechanical grinding method
US8524540B2 (en) * 2011-02-01 2013-09-03 Nilesh Kapadia Adhesion promoting composition for metal leadframes
US20120203765A1 (en) * 2011-02-04 2012-08-09 Microsoft Corporation Online catalog with integrated content
CN102181232B (zh) * 2011-03-17 2013-12-11 清华大学 Ulsi多层铜布线铜的低下压力化学机械抛光的组合物
WO2012133591A1 (ja) * 2011-03-30 2012-10-04 株式会社 フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び半導体デバイスの製造方法
US20140311044A1 (en) * 2011-04-25 2014-10-23 Bando Chemical Industries, Ltd. Polishing film
CN105086836A (zh) * 2015-08-19 2015-11-25 三峡大学 一种氧化铈抛光液及其制备方法
JP6797811B2 (ja) * 2015-09-30 2020-12-09 株式会社フジミインコーポレーテッド 研磨方法
KR102543680B1 (ko) * 2015-12-17 2023-06-16 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
KR102544644B1 (ko) * 2015-12-24 2023-06-19 솔브레인 주식회사 유기막 연마용 슬러리 조성물 및 이를 이용한 반도체 기판 연마 방법
WO2017147891A1 (en) * 2016-03-04 2017-09-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a semiconductor substrate
WO2018055985A1 (ja) * 2016-09-23 2018-03-29 株式会社フジミインコーポレーテッド 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法
WO2019030865A1 (ja) * 2017-08-09 2019-02-14 日立化成株式会社 研磨液及び研磨方法
US20200102476A1 (en) * 2018-09-28 2020-04-02 Versum Materials Us, Llc Barrier Slurry Removal Rate Improvement
JP7379789B2 (ja) 2020-03-02 2023-11-15 株式会社タイテム コロイダルシリカスラリー

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE400575B (sv) * 1974-12-13 1978-04-03 Nordnero Ab Bad for betning av koppar och dess legeringar
US4404074A (en) * 1982-05-27 1983-09-13 Occidental Chemical Corporation Electrolytic stripping bath and process
US4452643A (en) * 1983-01-12 1984-06-05 Halliburton Company Method of removing copper and copper oxide from a ferrous metal surface
JPS6396599A (ja) 1986-10-14 1988-04-27 三菱重工業株式会社 金属ルテニウムの溶解法
DE3735158A1 (de) * 1987-10-16 1989-05-03 Wacker Chemitronic Verfahren zum schleierfreien polieren von halbleiterscheiben
JPH01270512A (ja) 1988-04-21 1989-10-27 Tanaka Kikinzoku Kogyo Kk 貴金属の溶解方法
US4875973A (en) * 1988-07-27 1989-10-24 E. I. Du Pont De Nemours And Company Hydrogen peroxide compositions containing a substituted aminobenzaldehyde
JP2800020B2 (ja) * 1989-04-18 1998-09-21 東海電化工業株式会社 錫又は錫合金の化学溶解剤
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
JPH03202269A (ja) * 1989-10-12 1991-09-04 Nalco Chem Co 低ナトリウム低金属シリカ研磨スラリー
JPH03232980A (ja) 1990-02-06 1991-10-16 Shinko Electric Ind Co Ltd 銅もしくは銅合金上の銀剥離液
JPH0781132B2 (ja) * 1990-08-29 1995-08-30 株式会社フジミインコーポレーテッド 研磨剤組成物
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
JP3481379B2 (ja) * 1995-08-23 2003-12-22 メック株式会社 電気めっき法
JPH0982668A (ja) * 1995-09-20 1997-03-28 Sony Corp 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法
EP0773270B1 (en) * 1995-11-10 2001-01-24 Tokuyama Corporation Polishing slurries and a process for the production thereof
JPH1015811A (ja) * 1996-06-28 1998-01-20 Kao Corp 加工用助剤組成物及びこれを用いた表面加工方法
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US6039891A (en) * 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
US5972792A (en) * 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
US5773364A (en) * 1996-10-21 1998-06-30 Motorola, Inc. Method for using ammonium salt slurries for chemical mechanical polishing (CMP)
SG68005A1 (en) * 1996-12-02 1999-10-19 Fujimi Inc Polishing composition
JPH10172936A (ja) * 1996-12-05 1998-06-26 Fujimi Inkooporeetetsudo:Kk 研磨用組成物
US6309560B1 (en) * 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
KR100571892B1 (ko) * 1997-04-30 2006-04-18 미네소타 마이닝 앤드 매뉴팩춰링 캄파니 반도체 웨이퍼 상부 표면의 평탄화 방법
US5855633A (en) * 1997-06-06 1999-01-05 Lockheed Martin Energy Systems, Inc. Lapping slurry
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
JP3082722B2 (ja) * 1997-10-07 2000-08-28 日本電気株式会社 半導体装置およびその製造方法
US6001730A (en) * 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6096652A (en) * 1997-11-03 2000-08-01 Motorola, Inc. Method of chemical mechanical planarization using copper coordinating ligands
JP3094392B2 (ja) 1997-12-10 2000-10-03 株式会社荏原電産 エッチング液
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
CA2342332A1 (en) * 1998-08-31 2000-03-09 Hiroki Terazaki Abrasive liquid for metal and method for polishing
US6274063B1 (en) * 1998-11-06 2001-08-14 Hmt Technology Corporation Metal polishing composition
US6290736B1 (en) * 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
JP3912927B2 (ja) * 1999-05-10 2007-05-09 花王株式会社 研磨液組成物
DE19927286B4 (de) * 1999-06-15 2011-07-28 Qimonda AG, 81739 Verwendung einer Schleiflösung zum chemisch-mechanischen Polieren einer Edelmetall-Oberfläche
JP4614497B2 (ja) * 1999-07-13 2011-01-19 花王株式会社 研磨液組成物
JP2001144047A (ja) * 1999-11-12 2001-05-25 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
EP1252248A1 (en) 1999-12-14 2002-10-30 Rodel Holdings, Inc. Polishing compositions for noble metals
JP2001187877A (ja) * 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー

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US20030170991A1 (en) 2003-09-11
JP4188598B2 (ja) 2008-11-26
CN100368496C (zh) 2008-02-13
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