WO2009054370A1 - Ｃｍｐ研磨液及びこれを用いた基板の研磨方法 - Google Patents

Ｃｍｐ研磨液及びこれを用いた基板の研磨方法 Download PDF

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Publication number
WO2009054370A1
WO2009054370A1 PCT/JP2008/069022 JP2008069022W WO2009054370A1 WO 2009054370 A1 WO2009054370 A1 WO 2009054370A1 JP 2008069022 W JP2008069022 W JP 2008069022W WO 2009054370 A1 WO2009054370 A1 WO 2009054370A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
substrate
cmp
same
liquid
Prior art date
Application number
PCT/JP2008/069022
Other languages
English (en)
French (fr)
Inventor
Hisataka Minami
Hiroshi Ono
Jin Amanokura
Original Assignee
Hitachi Chemical Company, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Company, Ltd. filed Critical Hitachi Chemical Company, Ltd.
Priority to JP2009538213A priority Critical patent/JP5240202B2/ja
Priority to US12/678,555 priority patent/US20100216309A1/en
Publication of WO2009054370A1 publication Critical patent/WO2009054370A1/ja
Priority to US14/030,903 priority patent/US20140017893A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

　酸化剤と、研磨粒子と、水と、下記式（１）で表される構造を有する化合物又はその塩と、を含有させて、少なくともルテニウム層の研磨速度を従来の研磨液を用いた場合よりも向上させることができる、ルテニウムを含有する層を有する基板を研磨するためのＣＭＰ研磨液及びこれを用いた基板の研磨方法を提供する。 　［化１］
PCT/JP2008/069022 2007-10-23 2008-10-21 Ｃｍｐ研磨液及びこれを用いた基板の研磨方法 WO2009054370A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009538213A JP5240202B2 (ja) 2007-10-23 2008-10-21 Ｃｍｐ研磨液及びこれを用いた基板の研磨方法
US12/678,555 US20100216309A1 (en) 2007-10-23 2008-10-21 Cmp polishing liquid and method for polishing substrate using the same
US14/030,903 US20140017893A1 (en) 2007-10-23 2013-09-18 Cmp polishing liquid and method for polishing substrate using the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-275296 2007-10-23
JP2007275296 2007-10-23
JP2008-095461 2008-04-01
JP2008095461 2008-04-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/030,903 Division US20140017893A1 (en) 2007-10-23 2013-09-18 Cmp polishing liquid and method for polishing substrate using the same

Publications (1)

Publication Number Publication Date
WO2009054370A1 true WO2009054370A1 (ja) 2009-04-30

Family

ID=40579475

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069022 WO2009054370A1 (ja) 2007-10-23 2008-10-21 Ｃｍｐ研磨液及びこれを用いた基板の研磨方法

Country Status (4)

Country Link
US (2) US20100216309A1 (ja)
JP (2) JP5240202B2 (ja)
TW (1) TWI382082B (ja)
WO (1) WO2009054370A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011222716A (ja) * 2010-04-08 2011-11-04 Fujimi Inc 研磨用組成物及び研磨方法
US20120187563A1 (en) * 2011-01-24 2012-07-26 United Microelectronics Corp. Planarization method applied in process of manufacturing semiconductor component
JP2012234948A (ja) * 2011-04-28 2012-11-29 Fujimi Inc 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
JP2013033897A (ja) * 2010-12-22 2013-02-14 Jsr Corp 化学機械研磨方法
WO2015140850A1 (ja) * 2014-03-20 2015-09-24 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
JP2015532005A (ja) * 2012-08-24 2015-11-05 キャボット マイクロエレクトロニクス コーポレイション 白金及びルテニウム材料を選択的に研磨するための組成物及び方法
JP2020050861A (ja) * 2018-07-31 2020-04-02 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 低ディッシングおよび低浸食トポグラフィを伴うタングステン化学機械平坦化（ｃｍｐ）
JP2020097765A (ja) * 2018-12-18 2020-06-25 東京応化工業株式会社 エッチング液、被処理体の処理方法、及び半導体素子の製造方法。

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8506831B2 (en) 2008-12-23 2013-08-13 Air Products And Chemicals, Inc. Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate
EP2427524B1 (en) * 2009-05-08 2013-07-17 Basf Se Oxidizing particles based slurry for nobel metal including ruthenium chemical mechanical planarization
US8491806B2 (en) * 2010-01-12 2013-07-23 International Business Machines Corporation Chemical-mechanical polishing formulation and methods of use
JP6050934B2 (ja) * 2011-11-08 2016-12-21 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
TWI685029B (zh) * 2016-06-22 2020-02-11 大陸商盛美半導體設備（上海）有限公司 優化金屬平坦化工藝的方法
US10937691B2 (en) * 2018-09-27 2021-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming an abrasive slurry and methods for chemical-mechanical polishing
US11267987B2 (en) * 2019-10-30 2022-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical mechanical polishing slurry composition and method of polishing metal layer
US11820919B2 (en) 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation
US11804378B2 (en) 2021-12-31 2023-10-31 International Business Machines Corporation Surface conversion in chemical mechanical polishing

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JP2003507895A (ja) * 1999-08-13 2003-02-25 キャボット マイクロエレクトロニクス コーポレイション 停止化合物を伴う化学機械的研磨系及びその使用方法
WO2007043517A1 (ja) * 2005-10-12 2007-04-19 Hitachi Chemical Co., Ltd. Ｃｍｐ用研磨液及び研磨方法

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US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US6855266B1 (en) * 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
DE10152993A1 (de) * 2001-10-26 2003-05-08 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität
WO2003083920A1 (en) * 2002-03-25 2003-10-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tantalum barrier removal solution
CN100336179C (zh) * 2002-04-30 2007-09-05 日立化成工业株式会社 研磨液及研磨方法
TWI282360B (en) * 2002-06-03 2007-06-11 Hitachi Chemical Co Ltd Polishing composition and polishing method thereof
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
JPWO2007123235A1 (ja) * 2006-04-24 2009-09-10 日立化成工業株式会社 Ｃｍｐ用研磨液及び研磨方法
US7470617B2 (en) * 2007-03-01 2008-12-30 Intel Corporation Treating a liner layer to reduce surface oxides

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003507895A (ja) * 1999-08-13 2003-02-25 キャボット マイクロエレクトロニクス コーポレイション 停止化合物を伴う化学機械的研磨系及びその使用方法
WO2007043517A1 (ja) * 2005-10-12 2007-04-19 Hitachi Chemical Co., Ltd. Ｃｍｐ用研磨液及び研磨方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011222716A (ja) * 2010-04-08 2011-11-04 Fujimi Inc 研磨用組成物及び研磨方法
JP2013033897A (ja) * 2010-12-22 2013-02-14 Jsr Corp 化学機械研磨方法
US20120187563A1 (en) * 2011-01-24 2012-07-26 United Microelectronics Corp. Planarization method applied in process of manufacturing semiconductor component
US8759219B2 (en) * 2011-01-24 2014-06-24 United Microelectronics Corp. Planarization method applied in process of manufacturing semiconductor component
JP2012234948A (ja) * 2011-04-28 2012-11-29 Fujimi Inc 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
JP2015532005A (ja) * 2012-08-24 2015-11-05 キャボット マイクロエレクトロニクス コーポレイション 白金及びルテニウム材料を選択的に研磨するための組成物及び方法
WO2015140850A1 (ja) * 2014-03-20 2015-09-24 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
JP2020050861A (ja) * 2018-07-31 2020-04-02 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 低ディッシングおよび低浸食トポグラフィを伴うタングステン化学機械平坦化（ｃｍｐ）
JP7388842B2 (ja) 2018-07-31 2023-11-29 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 低ディッシングおよび低浸食トポグラフィを伴うタングステン化学機械平坦化（ｃｍｐ）
JP2020097765A (ja) * 2018-12-18 2020-06-25 東京応化工業株式会社 エッチング液、被処理体の処理方法、及び半導体素子の製造方法。

Also Published As

Publication number Publication date
TWI382082B (zh) 2013-01-11
JP5240202B2 (ja) 2013-07-17
TW200927902A (en) 2009-07-01
JP2013179303A (ja) 2013-09-09
JPWO2009054370A1 (ja) 2011-03-03
US20100216309A1 (en) 2010-08-26
JP5610020B2 (ja) 2014-10-22
US20140017893A1 (en) 2014-01-16

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