WO2009011100A1 - Iii族窒化物半導体基板およびその洗浄方法 - Google Patents

Iii族窒化物半導体基板およびその洗浄方法 Download PDF

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Publication number
WO2009011100A1
WO2009011100A1 PCT/JP2008/001813 JP2008001813W WO2009011100A1 WO 2009011100 A1 WO2009011100 A1 WO 2009011100A1 JP 2008001813 W JP2008001813 W JP 2008001813W WO 2009011100 A1 WO2009011100 A1 WO 2009011100A1
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning
semiconductor substrate
nitride semiconductor
iii nitride
same
Prior art date
Application number
PCT/JP2008/001813
Other languages
English (en)
French (fr)
Inventor
Kenji Fujito
Hirotaka Oota
Shuichi Kubo
Original Assignee
Mitsubishi Chemical Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corporation filed Critical Mitsubishi Chemical Corporation
Priority to US12/669,610 priority Critical patent/US7928446B2/en
Priority to EP08790165A priority patent/EP2175480A4/en
Priority to KR1020107003471A priority patent/KR101452550B1/ko
Publication of WO2009011100A1 publication Critical patent/WO2009011100A1/ja
Priority to US13/082,916 priority patent/US8022413B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Abstract

ダングリングボンド密度が１４．０ｎｍ－２より大きい面をアンモニウム塩を含む洗浄剤で洗浄することによって、ダングリングボンド密度が１４．０ｎｍ－２よりも大きくて平坦な面を有するIII族窒化物半導体基板を提供する。    
PCT/JP2008/001813 2007-07-19 2008-07-08 Iii族窒化物半導体基板およびその洗浄方法 WO2009011100A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/669,610 US7928446B2 (en) 2007-07-19 2008-07-08 Group III nitride semiconductor substrate and method for cleaning the same
EP08790165A EP2175480A4 (en) 2007-07-19 2008-07-08 GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR CLEANING THE SAME
KR1020107003471A KR101452550B1 (ko) 2007-07-19 2008-07-08 Ⅲ 족 질화물 반도체 기판 및 그 세정 방법
US13/082,916 US8022413B2 (en) 2007-07-19 2011-04-08 Group III nitride semiconductor substrate and method for cleaning the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-188603 2007-07-19
JP2007188603 2007-07-19

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/669,610 A-371-Of-International US7928446B2 (en) 2007-07-19 2008-07-08 Group III nitride semiconductor substrate and method for cleaning the same
US13/082,916 Continuation US8022413B2 (en) 2007-07-19 2011-04-08 Group III nitride semiconductor substrate and method for cleaning the same

Publications (1)

Publication Number Publication Date
WO2009011100A1 true WO2009011100A1 (ja) 2009-01-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001813 WO2009011100A1 (ja) 2007-07-19 2008-07-08 Iii族窒化物半導体基板およびその洗浄方法

Country Status (5)

Country Link
US (2) US7928446B2 (ja)
EP (1) EP2175480A4 (ja)
JP (3) JP5493302B2 (ja)
KR (1) KR101452550B1 (ja)
WO (1) WO2009011100A1 (ja)

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JP2011219304A (ja) * 2010-04-08 2011-11-04 Hitachi Cable Ltd 窒化物半導体基板、その製造方法及び窒化物半導体デバイス
JP2013124217A (ja) * 2011-12-13 2013-06-24 Mitsubishi Chemicals Corp 再生原料の製造方法、窒化物結晶の製造方法および窒化物結晶
WO2020162346A1 (ja) * 2019-02-07 2020-08-13 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法

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JP2009234906A (ja) * 2008-03-03 2009-10-15 Mitsubishi Chemicals Corp 窒化物半導体結晶とその製造方法
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JP5733120B2 (ja) * 2011-09-09 2015-06-10 住友電気工業株式会社 ソーワイヤおよびそれを用いたｉｉｉ族窒化物結晶基板の製造方法
JP5767141B2 (ja) * 2012-03-02 2015-08-19 株式会社サイオクス 窒化ガリウム基板およびそれを用いた光デバイス
KR102096421B1 (ko) 2012-09-25 2020-04-02 식스포인트 머터리얼즈 인코퍼레이티드 Iii 족 질화물 결정의 성장 방법
JP6140291B2 (ja) * 2012-09-26 2017-05-31 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物ウエハおよび製作方法および試験方法
KR101524930B1 (ko) * 2013-09-12 2015-06-01 한양대학교 에리카산학협력단 질화갈륨 기판의 n 표면용 세정용액 및 이를 이용한 질화갈륨 기판의 n 표면 세정방법
JP6656829B2 (ja) 2014-11-07 2020-03-04 株式会社フジミインコーポレーテッド 研磨用組成物
JP6957982B2 (ja) * 2017-05-29 2021-11-02 三菱電機株式会社 半導体装置及びその製造方法
JP7215683B2 (ja) * 2019-09-09 2023-01-31 株式会社Sumco 半導体デバイス

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011219304A (ja) * 2010-04-08 2011-11-04 Hitachi Cable Ltd 窒化物半導体基板、その製造方法及び窒化物半導体デバイス
JP2013124217A (ja) * 2011-12-13 2013-06-24 Mitsubishi Chemicals Corp 再生原料の製造方法、窒化物結晶の製造方法および窒化物結晶
WO2020162346A1 (ja) * 2019-02-07 2020-08-13 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法

Also Published As

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JP2009044138A (ja) 2009-02-26
KR20100046200A (ko) 2010-05-06
US7928446B2 (en) 2011-04-19
JP5493302B2 (ja) 2014-05-14
JP5896002B2 (ja) 2016-03-30
JP2014039028A (ja) 2014-02-27
KR101452550B1 (ko) 2014-10-21
JP2015061816A (ja) 2015-04-02
EP2175480A1 (en) 2010-04-14
US8022413B2 (en) 2011-09-20
EP2175480A4 (en) 2012-12-19
US20110180904A1 (en) 2011-07-28
US20100200865A1 (en) 2010-08-12
JP5641105B2 (ja) 2014-12-17

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