FR2680585B1 - Circuit generateur de tension interne correspondant a une tension externe appliquee a une puce a semi-conducteur. - Google Patents

Circuit generateur de tension interne correspondant a une tension externe appliquee a une puce a semi-conducteur.

Info

Publication number
FR2680585B1
FR2680585B1 FR9209521A FR9209521A FR2680585B1 FR 2680585 B1 FR2680585 B1 FR 2680585B1 FR 9209521 A FR9209521 A FR 9209521A FR 9209521 A FR9209521 A FR 9209521A FR 2680585 B1 FR2680585 B1 FR 2680585B1
Authority
FR
France
Prior art keywords
external
external voltage
semiconductor chip
generator circuit
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9209521A
Other languages
English (en)
Other versions
FR2680585A1 (fr
Inventor
Yong-Bo Park
Hyung-Kyu Lim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2680585A1 publication Critical patent/FR2680585A1/fr
Application granted granted Critical
Publication of FR2680585B1 publication Critical patent/FR2680585B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/28—Supervision thereof, e.g. detecting power-supply failure by out of limits supervision
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/81—Threshold

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Automation & Control Theory (AREA)
  • General Engineering & Computer Science (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Control Of Electrical Variables (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measurement Of Current Or Voltage (AREA)

Abstract

a) circuit générateur de tension interne correspondant à une tension externe appliquée à une puce à semi-conducteur b) circuit générateur de tension interne caractérisé en ce qu'il comprend: un circuit de détection de tension externe (100) destiné à détecter la tension externe de manière à amener la tension interne au niveau de la tension externe appliquée lorsque cette tension externe dépasse une valeur donnée; un circuit de commande de pilote (200) branché entre le premier amplificateur différentiel (100A) et le circuit pilote de sortie pour commander le branchement électrique entre le signal de sortie du premier amplificateur différentiel et la borne de commande du circuit pilote (50) en réponse au signal de sortie du circuit de détection de tension externe (100).
FR9209521A 1991-08-19 1992-07-31 Circuit generateur de tension interne correspondant a une tension externe appliquee a une puce a semi-conducteur. Expired - Lifetime FR2680585B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910014272A KR940008286B1 (ko) 1991-08-19 1991-08-19 내부전원발생회로

Publications (2)

Publication Number Publication Date
FR2680585A1 FR2680585A1 (fr) 1993-02-26
FR2680585B1 true FR2680585B1 (fr) 1994-03-11

Family

ID=19318758

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9209521A Expired - Lifetime FR2680585B1 (fr) 1991-08-19 1992-07-31 Circuit generateur de tension interne correspondant a une tension externe appliquee a une puce a semi-conducteur.

Country Status (8)

Country Link
US (1) US5349559A (fr)
JP (1) JP2662345B2 (fr)
KR (1) KR940008286B1 (fr)
DE (1) DE4226047C2 (fr)
FR (1) FR2680585B1 (fr)
GB (1) GB2259575B (fr)
IT (1) IT1255813B (fr)
TW (1) TW225060B (fr)

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Also Published As

Publication number Publication date
KR930005027A (ko) 1993-03-23
KR940008286B1 (ko) 1994-09-09
IT1255813B (it) 1995-11-16
ITMI921963A0 (it) 1992-08-07
TW225060B (fr) 1994-06-11
DE4226047C2 (de) 1994-10-06
US5349559A (en) 1994-09-20
GB2259575A (en) 1993-03-17
GB2259575B (en) 1995-08-09
ITMI921963A1 (it) 1994-02-07
GB9216841D0 (en) 1992-09-23
FR2680585A1 (fr) 1993-02-26
JPH06295585A (ja) 1994-10-21
JP2662345B2 (ja) 1997-10-08
DE4226047A1 (de) 1993-02-25

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