DE69427686T2 - Schaltungsanordnung zum Messen der Schwellenspannungaufteilung von nicht-flüchtigen Speicherzellen - Google Patents

Schaltungsanordnung zum Messen der Schwellenspannungaufteilung von nicht-flüchtigen Speicherzellen

Info

Publication number
DE69427686T2
DE69427686T2 DE69427686T DE69427686T DE69427686T2 DE 69427686 T2 DE69427686 T2 DE 69427686T2 DE 69427686 T DE69427686 T DE 69427686T DE 69427686 T DE69427686 T DE 69427686T DE 69427686 T2 DE69427686 T2 DE 69427686T2
Authority
DE
Germany
Prior art keywords
measuring
memory cells
volatile memory
threshold voltage
circuit arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69427686T
Other languages
English (en)
Other versions
DE69427686D1 (de
Inventor
Silvia Padoan
Marco Maccarrone
Marco Olivo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69427686D1 publication Critical patent/DE69427686D1/de
Application granted granted Critical
Publication of DE69427686T2 publication Critical patent/DE69427686T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/81—Threshold
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
DE69427686T 1994-03-31 1994-03-31 Schaltungsanordnung zum Messen der Schwellenspannungaufteilung von nicht-flüchtigen Speicherzellen Expired - Fee Related DE69427686T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94830156A EP0675504B1 (de) 1994-03-31 1994-03-31 Schaltungsanordnung zum Messen der Schwellenspannungaufteilung von nicht-flüchtigen Speicherzellen

Publications (2)

Publication Number Publication Date
DE69427686D1 DE69427686D1 (de) 2001-08-16
DE69427686T2 true DE69427686T2 (de) 2002-04-25

Family

ID=8218415

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69427686T Expired - Fee Related DE69427686T2 (de) 1994-03-31 1994-03-31 Schaltungsanordnung zum Messen der Schwellenspannungaufteilung von nicht-flüchtigen Speicherzellen

Country Status (4)

Country Link
US (1) US5600594A (de)
EP (1) EP0675504B1 (de)
JP (1) JPH07272500A (de)
DE (1) DE69427686T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6052321A (en) * 1997-04-16 2000-04-18 Micron Technology, Inc. Circuit and method for performing test on memory array cells using external sense amplifier reference current
US5959891A (en) * 1996-08-16 1999-09-28 Altera Corporation Evaluation of memory cell characteristics
GB2321737A (en) * 1997-01-30 1998-08-05 Motorola Inc Circuit and method of measuring the negative threshold voltage of a non-volatile memory cell
US5966330A (en) * 1998-04-30 1999-10-12 Eon Silicon Devices, Inc. Method and apparatus for measuring the threshold voltage of flash EEPROM memory cells being applied a variable control gate bias
US6219279B1 (en) * 1999-10-29 2001-04-17 Zilog, Inc. Non-volatile memory program driver and read reference circuits
US6205057B1 (en) * 2000-02-15 2001-03-20 Advanced Micro Devices System and method for detecting flash memory threshold voltages
WO2008024688A2 (en) * 2006-08-25 2008-02-28 Micron Technology, Inc. Method, apparatus and system relating to automatic cell threshold voltage measurement
US7483305B2 (en) * 2006-08-28 2009-01-27 Micron Technology, Inc. Method, apparatus and system relating to automatic cell threshold voltage measurement
US9159452B2 (en) * 2008-11-14 2015-10-13 Micron Technology, Inc. Automatic word line leakage measurement circuitry
US8588007B2 (en) 2011-02-28 2013-11-19 Micron Technology, Inc. Leakage measurement systems
US8634264B2 (en) 2011-10-26 2014-01-21 Micron Technology, Inc. Apparatuses, integrated circuits, and methods for measuring leakage current
CN103576065B (zh) * 2012-07-24 2017-05-03 中芯国际集成电路制造(上海)有限公司 一种晶体管阈值电压的测试电路
US10914780B2 (en) * 2018-12-20 2021-02-09 Micron Technology, Inc. Methods and apparatuses for threshold voltage measurement and related semiconductor devices and systems

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4253059A (en) * 1979-05-14 1981-02-24 Fairchild Camera & Instrument Corp. EPROM Reliability test circuit
US4301535A (en) * 1979-07-02 1981-11-17 Mostek Corporation Programmable read only memory integrated circuit with bit-check and deprogramming modes and methods for programming and testing said circuit
US4612630A (en) * 1984-07-27 1986-09-16 Harris Corporation EEPROM margin testing design
US5039941A (en) * 1990-07-27 1991-08-13 Intel Corporation Voltage threshold measuring circuit
KR940008286B1 (ko) * 1991-08-19 1994-09-09 삼성전자 주식회사 내부전원발생회로
US5420822A (en) * 1992-03-31 1995-05-30 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
JP2835272B2 (ja) * 1993-12-21 1998-12-14 株式会社東芝 半導体記憶装置
US5396467A (en) * 1994-03-30 1995-03-07 United Microelectronics Corp. Sense amplifier

Also Published As

Publication number Publication date
US5600594A (en) 1997-02-04
EP0675504B1 (de) 2001-07-11
JPH07272500A (ja) 1995-10-20
EP0675504A1 (de) 1995-10-04
DE69427686D1 (de) 2001-08-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee