BR9508297A - Mémoria com circuitos de tensão para detectar defeitos - Google Patents
Mémoria com circuitos de tensão para detectar defeitosInfo
- Publication number
- BR9508297A BR9508297A BR9508297A BR9508297A BR9508297A BR 9508297 A BR9508297 A BR 9508297A BR 9508297 A BR9508297 A BR 9508297A BR 9508297 A BR9508297 A BR 9508297A BR 9508297 A BR9508297 A BR 9508297A
- Authority
- BR
- Brazil
- Prior art keywords
- memory
- detect defects
- voltage circuits
- circuits
- voltage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50016—Marginal testing, e.g. race, voltage or current testing of retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/277,148 US5570317A (en) | 1994-07-19 | 1994-07-19 | Memory circuit with stress circuitry for detecting defects |
| PCT/US1995/007745 WO1996002916A1 (en) | 1994-07-19 | 1995-06-16 | Memory with stress circuitry for detecting defects |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR9508297A true BR9508297A (pt) | 1998-07-14 |
Family
ID=23059596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR9508297A BR9508297A (pt) | 1994-07-19 | 1995-06-16 | Mémoria com circuitos de tensão para detectar defeitos |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5570317A (pt) |
| EP (1) | EP0782747B1 (pt) |
| JP (1) | JP3701973B2 (pt) |
| CN (1) | CN1122280C (pt) |
| AU (1) | AU2865195A (pt) |
| BR (1) | BR9508297A (pt) |
| DE (1) | DE69518428T2 (pt) |
| WO (1) | WO1996002916A1 (pt) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6105152A (en) * | 1993-04-13 | 2000-08-15 | Micron Technology, Inc. | Devices and methods for testing cell margin of memory devices |
| US6079037A (en) * | 1997-08-20 | 2000-06-20 | Micron Technology, Inc. | Method and apparatus for detecting intercell defects in a memory device |
| US6157210A (en) * | 1997-10-16 | 2000-12-05 | Altera Corporation | Programmable logic device with circuitry for observing programmable logic circuit signals and for preloading programmable logic circuits |
| FR2772970B1 (fr) * | 1997-12-24 | 2003-09-26 | Sgs Thomson Microelectronics | Procede de test d'une memoire dynamique |
| US6697978B1 (en) * | 1999-10-25 | 2004-02-24 | Bae Systems Information And Electronic Systems Integration Inc. | Method for testing of known good die |
| US6256241B1 (en) * | 2000-03-30 | 2001-07-03 | Intel Corporation | Short write test mode for testing static memory cells |
| US7254692B1 (en) * | 2004-03-02 | 2007-08-07 | Advanced Micro Devices, Inc. | Testing for operating life of a memory device with address cycling using a gray code sequence |
| KR100924579B1 (ko) * | 2007-06-21 | 2009-11-02 | 삼성전자주식회사 | 리던던시 메모리 셀 억세스 회로, 이를 포함하는 반도체메모리 장치, 및 반도체 메모리 장치의 테스트 방법 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0612619B2 (ja) * | 1982-09-22 | 1994-02-16 | 株式会社日立製作所 | 半導体メモリ装置 |
| JPH0682520B2 (ja) * | 1987-07-31 | 1994-10-19 | 株式会社東芝 | 半導体メモリ |
| US5062079A (en) * | 1988-09-28 | 1991-10-29 | Kabushiki Kaisha Toshiba | MOS type random access memory with interference noise eliminator |
| JPH0766664B2 (ja) * | 1988-11-28 | 1995-07-19 | 日本電気株式会社 | 半導体メモリ回路 |
| JPH03278396A (ja) * | 1990-03-27 | 1991-12-10 | Nec Corp | 半導体記憶装置 |
| JPH0756759B2 (ja) * | 1990-12-27 | 1995-06-14 | 株式会社東芝 | スタティック型半導体記憶装置 |
| US5166608A (en) * | 1991-11-07 | 1992-11-24 | Advanced Micro Devices, Inc. | Arrangement for high speed testing of field-effect transistors and memory cells employing the same |
| US5255230A (en) * | 1991-12-31 | 1993-10-19 | Intel Corporation | Method and apparatus for testing the continuity of static random access memory cells |
| JPH06309869A (ja) * | 1993-04-28 | 1994-11-04 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
-
1994
- 1994-07-19 US US08/277,148 patent/US5570317A/en not_active Expired - Fee Related
-
1995
- 1995-06-16 WO PCT/US1995/007745 patent/WO1996002916A1/en active IP Right Grant
- 1995-06-16 DE DE69518428T patent/DE69518428T2/de not_active Expired - Lifetime
- 1995-06-16 CN CN95194685.4A patent/CN1122280C/zh not_active Expired - Fee Related
- 1995-06-16 EP EP95923957A patent/EP0782747B1/en not_active Expired - Lifetime
- 1995-06-16 BR BR9508297A patent/BR9508297A/pt not_active IP Right Cessation
- 1995-06-16 AU AU28651/95A patent/AU2865195A/en not_active Abandoned
- 1995-06-16 JP JP50502196A patent/JP3701973B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69518428D1 (de) | 2000-09-21 |
| CN1122280C (zh) | 2003-09-24 |
| DE69518428T2 (de) | 2001-03-29 |
| JP3701973B2 (ja) | 2005-10-05 |
| JPH10505701A (ja) | 1998-06-02 |
| EP0782747B1 (en) | 2000-08-16 |
| CN1155938A (zh) | 1997-07-30 |
| EP0782747A1 (en) | 1997-07-09 |
| AU2865195A (en) | 1996-02-16 |
| WO1996002916A1 (en) | 1996-02-01 |
| US5570317A (en) | 1996-10-29 |
| EP0782747A4 (en) | 1998-09-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FB36 | Technical and formal requirements: requirement - article 36 of industrial property law | ||
| FB36 | Technical and formal requirements: requirement - article 36 of industrial property law | ||
| FF | Decision: intention to grant | ||
| FG9A | Patent or certificate of addition granted | ||
| B21F | Lapse acc. art. 78, item iv - on non-payment of the annual fees in time |
Free format text: REFERENTE A 19A ANUIDADE. |
|
| B24J | Lapse because of non-payment of annual fees (definitively: art 78 iv lpi, resolution 113/2013 art. 12) |
Free format text: EM VIRTUDE DA EXTINCAO PUBLICADA NA RPI 2259 DE 22-04-2014 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDA A EXTINCAO DA PATENTE E SEUS CERTIFICADOS, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |