ES442755A1 - Un dispositivo transistor de efecto de campo mejorado. - Google Patents

Un dispositivo transistor de efecto de campo mejorado.

Info

Publication number
ES442755A1
ES442755A1 ES442755A ES442755A ES442755A1 ES 442755 A1 ES442755 A1 ES 442755A1 ES 442755 A ES442755 A ES 442755A ES 442755 A ES442755 A ES 442755A ES 442755 A1 ES442755 A1 ES 442755A1
Authority
ES
Spain
Prior art keywords
impurity
discharge
region
effect transistor
transistor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES442755A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of ES442755A1 publication Critical patent/ES442755A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Non-Volatile Memory (AREA)
ES442755A 1974-12-06 1975-11-18 Un dispositivo transistor de efecto de campo mejorado. Expired ES442755A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53024974A 1974-12-06 1974-12-06

Publications (1)

Publication Number Publication Date
ES442755A1 true ES442755A1 (es) 1977-04-01

Family

ID=24112972

Family Applications (1)

Application Number Title Priority Date Filing Date
ES442755A Expired ES442755A1 (es) 1974-12-06 1975-11-18 Un dispositivo transistor de efecto de campo mejorado.

Country Status (9)

Country Link
JP (1) JPS5168776A (enExample)
BE (1) BE835288A (enExample)
BR (1) BR7508781A (enExample)
CH (1) CH591764A5 (enExample)
DE (1) DE2545871B2 (enExample)
ES (1) ES442755A1 (enExample)
FR (1) FR2293795A1 (enExample)
NL (1) NL7513901A (enExample)
SE (1) SE7513554L (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS559477A (en) * 1978-07-06 1980-01-23 Nec Corp Method of making semiconductor device
JPS5646561A (en) * 1979-09-26 1981-04-27 Nec Corp Semiconductor device
JPS5685867A (en) * 1979-12-14 1981-07-13 Nec Corp Field effect semiconductor device
JPS57155771A (en) * 1981-03-23 1982-09-25 Hitachi Ltd Semiconductor integrated circuit device
JPH0646662B2 (ja) * 1983-12-26 1994-06-15 株式会社日立製作所 半導体装置
JPS6114765A (ja) * 1984-06-29 1986-01-22 Shindengen Electric Mfg Co Ltd 絶縁ゲ−ト型電界効果トランジスタ
JPS60121771A (ja) * 1984-11-09 1985-06-29 Hitachi Ltd 半導体装置
JPS61170065A (ja) * 1985-01-23 1986-07-31 Fuji Electric Co Ltd 絶縁ゲ−ト型電界効果トランジスタ
JPS61105872A (ja) * 1985-10-04 1986-05-23 Hitachi Ltd 半導体装置
US4786955A (en) * 1987-02-24 1988-11-22 General Electric Company Semiconductor device with source and drain depth extenders and a method of making the same
DE3818533C2 (de) * 1987-06-01 1994-05-26 Mitsubishi Electric Corp Feldeffekttransistor
JPH0294477A (ja) * 1988-09-30 1990-04-05 Toshiba Corp 半導体装置及びその製造方法
DE19706282A1 (de) * 1997-02-18 1998-08-20 Siemens Ag Verfahren zur Erzeugung einer Transistorstruktur
JP4541582B2 (ja) * 2001-03-28 2010-09-08 セイコーインスツル株式会社 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1192325B (de) * 1960-12-29 1965-05-06 Telefunken Patent Verfahren zur Herstellung eines Drifttransistors
DE1293899C2 (de) * 1964-08-12 1969-12-11 Telefunken Patent Planar- oder Mesatransistor und Verfahren zur Herstellung des Planartransistors
JPS49105490A (enExample) * 1973-02-07 1974-10-05

Also Published As

Publication number Publication date
DE2545871B2 (de) 1980-06-19
DE2545871C3 (enExample) 1983-03-03
FR2293795B1 (enExample) 1978-05-12
BR7508781A (pt) 1976-08-24
BE835288A (fr) 1976-03-01
DE2545871A1 (de) 1976-06-10
JPS5168776A (en) 1976-06-14
CH591764A5 (enExample) 1977-09-30
NL7513901A (nl) 1976-06-09
FR2293795A1 (fr) 1976-07-02
SE7513554L (sv) 1976-06-08

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