JPS5168776A - Doreinryoikigako oyobi teifujunbutsunodobukaranaru denkaikokatoranjisuta - Google Patents
Doreinryoikigako oyobi teifujunbutsunodobukaranaru denkaikokatoranjisutaInfo
- Publication number
- JPS5168776A JPS5168776A JP50127537A JP12753775A JPS5168776A JP S5168776 A JPS5168776 A JP S5168776A JP 50127537 A JP50127537 A JP 50127537A JP 12753775 A JP12753775 A JP 12753775A JP S5168776 A JPS5168776 A JP S5168776A
- Authority
- JP
- Japan
- Prior art keywords
- teifujunbutsunodobukaranaru
- doreinryoikigako
- denkaikokatoranjisuta
- oyobi
- teifujunbutsunodobukaranaru denkaikokatoranjisuta
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53024974A | 1974-12-06 | 1974-12-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5168776A true JPS5168776A (en) | 1976-06-14 |
Family
ID=24112972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50127537A Pending JPS5168776A (en) | 1974-12-06 | 1975-10-24 | Doreinryoikigako oyobi teifujunbutsunodobukaranaru denkaikokatoranjisuta |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5168776A (ja) |
BE (1) | BE835288A (ja) |
BR (1) | BR7508781A (ja) |
CH (1) | CH591764A5 (ja) |
DE (1) | DE2545871B2 (ja) |
ES (1) | ES442755A1 (ja) |
FR (1) | FR2293795A1 (ja) |
NL (1) | NL7513901A (ja) |
SE (1) | SE7513554L (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS559477A (en) * | 1978-07-06 | 1980-01-23 | Nec Corp | Method of making semiconductor device |
JPS5646561A (en) * | 1979-09-26 | 1981-04-27 | Nec Corp | Semiconductor device |
JPS5685867A (en) * | 1979-12-14 | 1981-07-13 | Nec Corp | Field effect semiconductor device |
JPS57155771A (en) * | 1981-03-23 | 1982-09-25 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS60121771A (ja) * | 1984-11-09 | 1985-06-29 | Hitachi Ltd | 半導体装置 |
JPS6114765A (ja) * | 1984-06-29 | 1986-01-22 | Shindengen Electric Mfg Co Ltd | 絶縁ゲ−ト型電界効果トランジスタ |
JPS61105872A (ja) * | 1985-10-04 | 1986-05-23 | Hitachi Ltd | 半導体装置 |
JPS61170065A (ja) * | 1985-01-23 | 1986-07-31 | Fuji Electric Co Ltd | 絶縁ゲ−ト型電界効果トランジスタ |
JP2002289847A (ja) * | 2001-03-28 | 2002-10-04 | Seiko Instruments Inc | 半導体装置の製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0646662B2 (ja) * | 1983-12-26 | 1994-06-15 | 株式会社日立製作所 | 半導体装置 |
US4786955A (en) * | 1987-02-24 | 1988-11-22 | General Electric Company | Semiconductor device with source and drain depth extenders and a method of making the same |
DE3818533C2 (de) * | 1987-06-01 | 1994-05-26 | Mitsubishi Electric Corp | Feldeffekttransistor |
JPH0294477A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | 半導体装置及びその製造方法 |
DE19706282A1 (de) * | 1997-02-18 | 1998-08-20 | Siemens Ag | Verfahren zur Erzeugung einer Transistorstruktur |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49105490A (ja) * | 1973-02-07 | 1974-10-05 |
-
1975
- 1975-10-14 DE DE2545871A patent/DE2545871B2/de active Granted
- 1975-10-24 JP JP50127537A patent/JPS5168776A/ja active Pending
- 1975-10-27 CH CH1387275A patent/CH591764A5/xx not_active IP Right Cessation
- 1975-10-29 FR FR7533870A patent/FR2293795A1/fr active Granted
- 1975-11-05 BE BE161620A patent/BE835288A/xx unknown
- 1975-11-18 ES ES442755A patent/ES442755A1/es not_active Expired
- 1975-11-28 NL NL7513901A patent/NL7513901A/xx not_active Application Discontinuation
- 1975-12-02 SE SE7513554A patent/SE7513554L/xx unknown
- 1975-12-08 BR BR7508781*A patent/BR7508781A/pt unknown
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS559477A (en) * | 1978-07-06 | 1980-01-23 | Nec Corp | Method of making semiconductor device |
JPS5646561A (en) * | 1979-09-26 | 1981-04-27 | Nec Corp | Semiconductor device |
JPS5685867A (en) * | 1979-12-14 | 1981-07-13 | Nec Corp | Field effect semiconductor device |
JPS57155771A (en) * | 1981-03-23 | 1982-09-25 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS6114765A (ja) * | 1984-06-29 | 1986-01-22 | Shindengen Electric Mfg Co Ltd | 絶縁ゲ−ト型電界効果トランジスタ |
JPS60121771A (ja) * | 1984-11-09 | 1985-06-29 | Hitachi Ltd | 半導体装置 |
JPS61170065A (ja) * | 1985-01-23 | 1986-07-31 | Fuji Electric Co Ltd | 絶縁ゲ−ト型電界効果トランジスタ |
JPS61105872A (ja) * | 1985-10-04 | 1986-05-23 | Hitachi Ltd | 半導体装置 |
JP2002289847A (ja) * | 2001-03-28 | 2002-10-04 | Seiko Instruments Inc | 半導体装置の製造方法 |
JP4541582B2 (ja) * | 2001-03-28 | 2010-09-08 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
FR2293795A1 (fr) | 1976-07-02 |
CH591764A5 (ja) | 1977-09-30 |
ES442755A1 (es) | 1977-04-01 |
BE835288A (fr) | 1976-03-01 |
DE2545871C3 (ja) | 1983-03-03 |
FR2293795B1 (ja) | 1978-05-12 |
DE2545871B2 (de) | 1980-06-19 |
DE2545871A1 (de) | 1976-06-10 |
BR7508781A (pt) | 1976-08-24 |
SE7513554L (sv) | 1976-06-08 |
NL7513901A (nl) | 1976-06-09 |
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