BE835288A - Procede de fabrication de transistors a effet de champ perfectionnes - Google Patents

Procede de fabrication de transistors a effet de champ perfectionnes

Info

Publication number
BE835288A
BE835288A BE161620A BE161620A BE835288A BE 835288 A BE835288 A BE 835288A BE 161620 A BE161620 A BE 161620A BE 161620 A BE161620 A BE 161620A BE 835288 A BE835288 A BE 835288A
Authority
BE
Belgium
Prior art keywords
perfected
field
manufacturing process
effect transistors
transistors
Prior art date
Application number
BE161620A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE835288A publication Critical patent/BE835288A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Non-Volatile Memory (AREA)
  • Bipolar Transistors (AREA)
BE161620A 1974-12-06 1975-11-05 Procede de fabrication de transistors a effet de champ perfectionnes BE835288A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53024974A 1974-12-06 1974-12-06

Publications (1)

Publication Number Publication Date
BE835288A true BE835288A (fr) 1976-03-01

Family

ID=24112972

Family Applications (1)

Application Number Title Priority Date Filing Date
BE161620A BE835288A (fr) 1974-12-06 1975-11-05 Procede de fabrication de transistors a effet de champ perfectionnes

Country Status (9)

Country Link
JP (1) JPS5168776A (fr)
BE (1) BE835288A (fr)
BR (1) BR7508781A (fr)
CH (1) CH591764A5 (fr)
DE (1) DE2545871B2 (fr)
ES (1) ES442755A1 (fr)
FR (1) FR2293795A1 (fr)
NL (1) NL7513901A (fr)
SE (1) SE7513554L (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS559477A (en) * 1978-07-06 1980-01-23 Nec Corp Method of making semiconductor device
JPS5646561A (en) * 1979-09-26 1981-04-27 Nec Corp Semiconductor device
JPS5685867A (en) * 1979-12-14 1981-07-13 Nec Corp Field effect semiconductor device
JPS57155771A (en) * 1981-03-23 1982-09-25 Hitachi Ltd Semiconductor integrated circuit device
JPH0646662B2 (ja) * 1983-12-26 1994-06-15 株式会社日立製作所 半導体装置
JPS6114765A (ja) * 1984-06-29 1986-01-22 Shindengen Electric Mfg Co Ltd 絶縁ゲ−ト型電界効果トランジスタ
JPS60121771A (ja) * 1984-11-09 1985-06-29 Hitachi Ltd 半導体装置
JPS61170065A (ja) * 1985-01-23 1986-07-31 Fuji Electric Co Ltd 絶縁ゲ−ト型電界効果トランジスタ
JPS61105872A (ja) * 1985-10-04 1986-05-23 Hitachi Ltd 半導体装置
US4786955A (en) * 1987-02-24 1988-11-22 General Electric Company Semiconductor device with source and drain depth extenders and a method of making the same
DE3818533C2 (de) * 1987-06-01 1994-05-26 Mitsubishi Electric Corp Feldeffekttransistor
JPH0294477A (ja) * 1988-09-30 1990-04-05 Toshiba Corp 半導体装置及びその製造方法
DE19706282A1 (de) * 1997-02-18 1998-08-20 Siemens Ag Verfahren zur Erzeugung einer Transistorstruktur
JP4541582B2 (ja) * 2001-03-28 2010-09-08 セイコーインスツル株式会社 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49105490A (fr) * 1973-02-07 1974-10-05

Also Published As

Publication number Publication date
ES442755A1 (es) 1977-04-01
FR2293795A1 (fr) 1976-07-02
DE2545871C3 (fr) 1983-03-03
NL7513901A (nl) 1976-06-09
BR7508781A (pt) 1976-08-24
DE2545871B2 (de) 1980-06-19
DE2545871A1 (de) 1976-06-10
JPS5168776A (en) 1976-06-14
SE7513554L (sv) 1976-06-08
CH591764A5 (fr) 1977-09-30
FR2293795B1 (fr) 1978-05-12

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