NL7513901A - Veldeffecttransistor met verbeterde drempelsta- biliteit. - Google Patents
Veldeffecttransistor met verbeterde drempelsta- biliteit.Info
- Publication number
- NL7513901A NL7513901A NL7513901A NL7513901A NL7513901A NL 7513901 A NL7513901 A NL 7513901A NL 7513901 A NL7513901 A NL 7513901A NL 7513901 A NL7513901 A NL 7513901A NL 7513901 A NL7513901 A NL 7513901A
- Authority
- NL
- Netherlands
- Prior art keywords
- field effect
- effect transistor
- improved threshold
- threshold stability
- stability
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US53024974A | 1974-12-06 | 1974-12-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7513901A true NL7513901A (nl) | 1976-06-09 |
Family
ID=24112972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7513901A NL7513901A (nl) | 1974-12-06 | 1975-11-28 | Veldeffecttransistor met verbeterde drempelsta- biliteit. |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5168776A (xx) |
| BE (1) | BE835288A (xx) |
| BR (1) | BR7508781A (xx) |
| CH (1) | CH591764A5 (xx) |
| DE (1) | DE2545871B2 (xx) |
| ES (1) | ES442755A1 (xx) |
| FR (1) | FR2293795A1 (xx) |
| NL (1) | NL7513901A (xx) |
| SE (1) | SE7513554L (xx) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS559477A (en) * | 1978-07-06 | 1980-01-23 | Nec Corp | Method of making semiconductor device |
| JPS5646561A (en) * | 1979-09-26 | 1981-04-27 | Nec Corp | Semiconductor device |
| JPS5685867A (en) * | 1979-12-14 | 1981-07-13 | Nec Corp | Field effect semiconductor device |
| JPS57155771A (en) * | 1981-03-23 | 1982-09-25 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPH0646662B2 (ja) * | 1983-12-26 | 1994-06-15 | 株式会社日立製作所 | 半導体装置 |
| JPS6114765A (ja) * | 1984-06-29 | 1986-01-22 | Shindengen Electric Mfg Co Ltd | 絶縁ゲ−ト型電界効果トランジスタ |
| JPS60121771A (ja) * | 1984-11-09 | 1985-06-29 | Hitachi Ltd | 半導体装置 |
| JPS61170065A (ja) * | 1985-01-23 | 1986-07-31 | Fuji Electric Co Ltd | 絶縁ゲ−ト型電界効果トランジスタ |
| JPS61105872A (ja) * | 1985-10-04 | 1986-05-23 | Hitachi Ltd | 半導体装置 |
| US4786955A (en) * | 1987-02-24 | 1988-11-22 | General Electric Company | Semiconductor device with source and drain depth extenders and a method of making the same |
| DE3818533C2 (de) * | 1987-06-01 | 1994-05-26 | Mitsubishi Electric Corp | Feldeffekttransistor |
| JPH0294477A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | 半導体装置及びその製造方法 |
| DE19706282A1 (de) * | 1997-02-18 | 1998-08-20 | Siemens Ag | Verfahren zur Erzeugung einer Transistorstruktur |
| JP4541582B2 (ja) * | 2001-03-28 | 2010-09-08 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49105490A (xx) * | 1973-02-07 | 1974-10-05 |
-
1975
- 1975-10-14 DE DE2545871A patent/DE2545871B2/de active Granted
- 1975-10-24 JP JP50127537A patent/JPS5168776A/ja active Pending
- 1975-10-27 CH CH1387275A patent/CH591764A5/xx not_active IP Right Cessation
- 1975-10-29 FR FR7533870A patent/FR2293795A1/fr active Granted
- 1975-11-05 BE BE161620A patent/BE835288A/xx unknown
- 1975-11-18 ES ES442755A patent/ES442755A1/es not_active Expired
- 1975-11-28 NL NL7513901A patent/NL7513901A/xx not_active Application Discontinuation
- 1975-12-02 SE SE7513554A patent/SE7513554L/xx unknown
- 1975-12-08 BR BR7508781*A patent/BR7508781A/pt unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2545871B2 (de) | 1980-06-19 |
| DE2545871A1 (de) | 1976-06-10 |
| BE835288A (fr) | 1976-03-01 |
| ES442755A1 (es) | 1977-04-01 |
| SE7513554L (sv) | 1976-06-08 |
| DE2545871C3 (xx) | 1983-03-03 |
| BR7508781A (pt) | 1976-08-24 |
| CH591764A5 (xx) | 1977-09-30 |
| FR2293795B1 (xx) | 1978-05-12 |
| FR2293795A1 (fr) | 1976-07-02 |
| JPS5168776A (en) | 1976-06-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BV | The patent application has lapsed |